肖特基mosfet的Er插入硅化镍金属源极/漏极

2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI:10.1109/IWJT.2010.5474989

P. Ahmet, W. Hosoda, K. Noguchi, Y. Ohishi, K. Kakushima, Kazuo Tsutsui, H. Iwai

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引用次数: 0

摘要

综述了一种通过在硅化镍金属源极/漏极中插入Er层实现低肖特基势垒高度的肖特基势垒调制技术。通过在大块和SOI衬底上制造肖特基势垒源/漏极mosfet，证明了该技术的有效性和可能性。

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Er inserted Ni silicide metal source/drain for Schottky MOSFETs

A Schottky barrier height modulation technique for achieving a low Schottky barrier height in Ni silicide metal source/drain by Er layer insertion was reviewed. The effectiveness and possibility of the technique was demonstrated by fabricating Schottky barrier source/drain MOSFETs onto both bulk and SOI substrates.

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2010 International Workshop on Junction Technology Extended Abstracts

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