Zhihao Ding, Guangxi Hu, Jinglun Gu, Ran Liu, Lingli Wang, T. Tang
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An analytical model for the subthreshold swing of double-gate MOSFETs
A model for the Symmetric Double-Gate (SDG) n-MOSFET is presented. Poisson equation is solved analytically and channel potential is obtained. The analytical expression for subthreshold swing is achieved. Model results are compared with Medici simulations, good agreement is observed. The subthreshold swing of an SDG MOSFET will be improved by increasing the channel length, by reducing either the silicon body thickness or the gate oxide thickness, and by increasing the silicon body doping concentration.
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