{"title":"Multidimensional mining of big social data for supporting advanced big data analytics","authors":"A. Cuzzocrea","doi":"10.23919/MIPRO.2017.7973630","DOIUrl":"https://doi.org/10.23919/MIPRO.2017.7973630","url":null,"abstract":"Big social data are now everywhere. They constitute a rich source of knowledge that is prone to be explored and mined in order to support advanced big data analytics. Multidimensional mining identifies a promising collection of tools to this end. Following this recent trend, in this paper, we provide an overview on two state-of-the-art proposals that show how big data analytics over big social data work in practice.","PeriodicalId":203046,"journal":{"name":"2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125316911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Manufacturing optimization for Silicon Trench rectifiers using NiPt salicide","authors":"M. Thomason, M. Quddus, M. Mudholkar","doi":"10.23919/MIPRO.2017.7966565","DOIUrl":"https://doi.org/10.23919/MIPRO.2017.7966565","url":null,"abstract":"The purpose of this study was to provide a low cost manufacturing solution for Silicon Trench based Schottky rectifiers utilizing NiPt alloy composition that produces multiple barrier heights and provide designers the option to easily adjust the barrier height (BH) for rectifier designs. Higher temperatures needed to obtain larger barrier heights are generally unfavorable for trench-based Schottky rectifiers. The silicides in trench rectifiers are separated by relativity small distances with nonreactive material (such as silicon oxide) and with high energy anneals and the silicon from the substrate will migrate creating a Ni(Pt)Si bridge between adjacent silicides. Additional issues arise from thicker Ni(Pt)Si growth near the gate oxide interface causing localized high silicon stress. Both these issues cause device performance issues such as increased diode leakage. Most common industry solution is to change the %Pt in the Ni alloy thus modulating the BH. A low cost solution is to use one NiPt alloy to meet multiple BH needs by changing the anneal conditions and adding a Ti “Cap” to the NiPt film.","PeriodicalId":203046,"journal":{"name":"2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126922386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Al-Cu interconnect corrosion prevention in post metal etch and wet polymer clean wafers","authors":"Wan Tatt Wai, N. Ling","doi":"10.23919/MIPRO.2017.7966547","DOIUrl":"https://doi.org/10.23919/MIPRO.2017.7966547","url":null,"abstract":"Aluminium-copper (Al-Cu) interconnect corrosion can be observed in some integrated circuit technologies processed through dry metal etch using chlorine (Cl) gas followed by wet polymer clean and wet particle removal steps. Corrosion onset after metal etch, wet polymer clean and wet particle removal were investigated respectively. For each steps, 3 major tests were used to induce corrosion: (a) environment exposure test; (b) time idling test and (c) cassettes box moisture test. Corrosion only happened in these 3 tests after wet polymer clean. Anion extraction test for Cl− and F− indicated that both ions increased under moisturized environment. This proved that Cl− and F− that were detected from corrosion spot were not originated from metal etch gas or wet polymer clean chemistry, but from moisture. Moisture residues after wet polymer clean was identified as main root cause of corrosion. Increasing isopropyl-alcohol (IPA) purge time by 10 secs and wafers lift up time by 18 secs in Marangoni drying step for this process proved to be efficient in preventing corrosion.","PeriodicalId":203046,"journal":{"name":"2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114466237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Rolseth, A. Blech, I. Fischer, Youssef Hashad, R. Koerner, K. Kostecki, A. Kruglov, V. Srinivasan, Mathias C. J. Weiser, Torsten Wendav, K. Busch, J. Schulze
{"title":"Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges","authors":"E. Rolseth, A. Blech, I. Fischer, Youssef Hashad, R. Koerner, K. Kostecki, A. Kruglov, V. Srinivasan, Mathias C. J. Weiser, Torsten Wendav, K. Busch, J. Schulze","doi":"10.23919/MIPRO.2017.7973391","DOIUrl":"https://doi.org/10.23919/MIPRO.2017.7973391","url":null,"abstract":"In this paper we report experimental results on the fabrication and characterization of vertical Ge gate-all-around p-channel TFETs, utilizing GeSn as a channel material. Through two sample series, the potential and challenges of implementing the low-band gap material GeSn are reviewed. It is verified that ION can be effectively enhanced by increasing the Sn-content in the GeSn-channel, due to increasing tunneling probabilities. Further it is found that when limited to a 10 nm δ-layer, Ge0.96Sn0.04 is most beneficial for ION when positioned inside the channel as opposed to in the source, with a maximum of ION = 180 µA/µm at VDS= −2 V and VG = −4 V. Enhanced leakage currents (IOFF), which also degrades the subthreshold swing (SS), is a consequence of a smaller band gap and enhanced defect densities, and represent key challenges with implementing GeSn.","PeriodicalId":203046,"journal":{"name":"2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117295106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. van Roijen, Jeffery B. Maxson, Michael Brodfuehrer, Bruce Dyer, Colleen Meagher, M. Dai, J. Ayala, Gasner Barthold, M. Steigerwalt, Lingjie Wang, David McCarthy, Trejo Rust, Randal Bakken
{"title":"Datamining for yield","authors":"R. van Roijen, Jeffery B. Maxson, Michael Brodfuehrer, Bruce Dyer, Colleen Meagher, M. Dai, J. Ayala, Gasner Barthold, M. Steigerwalt, Lingjie Wang, David McCarthy, Trejo Rust, Randal Bakken","doi":"10.23919/MIPRO.2017.7966598","DOIUrl":"https://doi.org/10.23919/MIPRO.2017.7966598","url":null,"abstract":"A small but persistent signal in wafer slot order was observed at functional test, affecting logic yield. Through wafer slot Randomization at several operations in the route a process step within high-k metal gate formation was suspected to be causing the degrade, but conventional approaches did not reveal the root cause. By combining datamining with a thorough analysis of sector and electrical data we identified a defect mechanism exacerbated by the delay between gate metal and polysilicon deposition. By applying a process change, we addressed the issue and achieved yield improvement.","PeriodicalId":203046,"journal":{"name":"2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128231155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Visnja Ognjenovic, E. Brtka, V. Brtka, I. Berkovic
{"title":"Effects of the distribution of the values of condition attribute on the quality of decision rules","authors":"Visnja Ognjenovic, E. Brtka, V. Brtka, I. Berkovic","doi":"10.23919/MIPRO.2017.7973602","DOIUrl":"https://doi.org/10.23919/MIPRO.2017.7973602","url":null,"abstract":"The table-organized data can be analyzed by various algorithms; some of them are capable of generating IF THEN decision rules which comprises of condition attributes and decision attributes. However, it is possible to reduce the set of condition attributes but without information loss. By analysis of the condition attributes set and cuts histogram obtained by discretization and rule consistency, it is possible to choose condition attributes. This paper gives some directions and the practical example.","PeriodicalId":203046,"journal":{"name":"2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124622982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Innovative scalable design based care area methodology for defect monitoring in production","authors":"Ian Tolle, Ankit Jain","doi":"10.23919/MIPRO.2017.7966562","DOIUrl":"https://doi.org/10.23919/MIPRO.2017.7966562","url":null,"abstract":"The use of design-based care areas on inspection tools [1, 2] to characterize defects has been well established in recent years. However, the implementation has generally been limited to specific engineering use cases, due to the complexity involved with care area creation and inspection recipe setup. Furthermore, creating, organizing, optimizing and auditing all these care areas per inspection step and per device can be time-consuming. In this work we demonstrate a novel methodology for the implementation of NanoPoint™ care areas across all inspection steps in semiconductor process flow, using a technology-specific set of care area generation rules, rather than rules targeted to particular defect of interest (DOI). This approach enables optimal recipe sensitivity across the entirety of a chip, by segmenting care area coverage into high-sensitivity, intermediate-sensitivity and low-sensitivity regions based on pattern density. Furthermore, this methodology is scalable in nature which means that the care area generation rules are defined only once per technology node, and thus, can enable automated care area generation for any chip design within a technology node, with no user input required. Inspection recipes created with this type of care area demonstrate consistent sensitivity for cross-product defectivity analysis in a high volume manufacturing (HVM) wafer fab.","PeriodicalId":203046,"journal":{"name":"2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126804728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The educators' telescope to the future of technology","authors":"H. Jaakkola, J. Henno, B. Thalheim, J. Mäkelä","doi":"10.23919/MIPRO.2017.7973506","DOIUrl":"https://doi.org/10.23919/MIPRO.2017.7973506","url":null,"abstract":"We live in a world of accelerating changes, where technology plays an important role as an enabler. Looking ahead means being prepared for these changes. Preparedness may be reactive - reacting to the situation at the moment something happens; proactive - being prepared in advance for a situation that may happen; or preactive - being able in advance to affect something that may happen in the future and how it happens. Forecasting the future helps us to be prepared for new situations. It is based on making predictions that are derived from understanding past and present data. Known data is organized in the form of trends and further extrapolated to cover the future. From the technical point of view, there are a variety of approaches for forecasting: algorithmic, simulation, statistical analysis etc. The methods used may be quantitative (future data is seen as a function of past data) or qualitative (subjective, based on the opinion or judgment of the target group used in the analysis). Technology is an essential part of education, both in supporting effective learning and as a content of teaching itself. As a result, every educator needs skills to analyze the future of relevant technologies. In this paper, we introduce a framework that can be used in analysis of the importance of technological changes in education and as a part of curricula. The approach is based on trend analysis and classification of the relevant technologies to take into account the time span of their effects in society. The question we answer in this paper is “How can an educator analyze the consequences of technological changes in their work?”.","PeriodicalId":203046,"journal":{"name":"2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129178854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jong-Seong Kim, C. Ahn, Tae-Woo Kim, Hyun-Jin Lee, Jong-Bae Lee
{"title":"A market-oriented wafer map optimization methodology using Differential Evolution to maximize wafer productivity","authors":"Jong-Seong Kim, C. Ahn, Tae-Woo Kim, Hyun-Jin Lee, Jong-Bae Lee","doi":"10.23919/MIPRO.2017.7966615","DOIUrl":"https://doi.org/10.23919/MIPRO.2017.7966615","url":null,"abstract":"In order to have a competitive edge in increasing global competition, memory industries need to improve productivity by a novel manufacturing strategy which is apposite to the rapid market changes. However, the conventional wafer productivity model only focuses on maximizing gross die which cannot address wafer productivity for profitability, i.e. return on investment (ROI), with respect to current market situations, since ROI is significantly influenced not only by the number of gross dies, but also by the number of shots and the market price. In this paper, we propose a novel productivity model based on ROI in order to compare wafer maps and to determine a chip size for productivity. To search the productivity-maximal wafer map in extremely large search space, we adopt Differential Evolution (DE) as the optimization technique. The computational results show that the proposed method can solve the problem of optimizing wafer map in minutes. Comparison results have demonstrated that the proposed method effectively improved wafer productivity by up to 1.82% in contrast with the old method. Ultimately, the proposed approach helps memory design engineers determine a chip size in an early design stage with consideration of the corresponding productivity.","PeriodicalId":203046,"journal":{"name":"2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130672076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Podbojec, B. Herynek, D. Jazbec, M. Cvetko, M. Debevc, I. Kožuh
{"title":"3D-based location positioning using the Dew Computing approach for indoor navigation","authors":"D. Podbojec, B. Herynek, D. Jazbec, M. Cvetko, M. Debevc, I. Kožuh","doi":"10.23919/MIPRO.2017.7973455","DOIUrl":"https://doi.org/10.23919/MIPRO.2017.7973455","url":null,"abstract":"In the field of indoor navigation, there is still a lack of a unified system which could be applied to different buildings. As far as existing indoor navigation solutions are concerned, there is a recognised need for developing an application which would allow users to navigate within large buildings, especially when educational institutions are in question. Thus, in our study, we designed, developed and evaluated a web-based application “Virtual FERI” which allows indoor navigation of the G3 building of the Faculty of Electrical Engineering and Computer Science (FERI) in Maribor, Slovenia. Following the 3D model of the building, it simplifies the process of seeking the specific classroom in the building which could help newcomer students and guest lecturers to navigate within the building. To evaluate the application, we conducted an experiment with 25 students from the University of Maribor who had not been in building G3 before. Usability and user experience of the application were assessed with a User Experience Questionnaire and System Usability Scale. Time was measured as well. The findings revealed that navigating within the buildings can be faster by using the “Virtual FERI” where usability was sufficient and user experience was satisfactory.","PeriodicalId":203046,"journal":{"name":"2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123868064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}