对产量进行数据挖掘

R. van Roijen, Jeffery B. Maxson, Michael Brodfuehrer, Bruce Dyer, Colleen Meagher, M. Dai, J. Ayala, Gasner Barthold, M. Steigerwalt, Lingjie Wang, David McCarthy, Trejo Rust, Randal Bakken
{"title":"对产量进行数据挖掘","authors":"R. van Roijen, Jeffery B. Maxson, Michael Brodfuehrer, Bruce Dyer, Colleen Meagher, M. Dai, J. Ayala, Gasner Barthold, M. Steigerwalt, Lingjie Wang, David McCarthy, Trejo Rust, Randal Bakken","doi":"10.23919/MIPRO.2017.7966598","DOIUrl":null,"url":null,"abstract":"A small but persistent signal in wafer slot order was observed at functional test, affecting logic yield. Through wafer slot Randomization at several operations in the route a process step within high-k metal gate formation was suspected to be causing the degrade, but conventional approaches did not reveal the root cause. By combining datamining with a thorough analysis of sector and electrical data we identified a defect mechanism exacerbated by the delay between gate metal and polysilicon deposition. By applying a process change, we addressed the issue and achieved yield improvement.","PeriodicalId":203046,"journal":{"name":"2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Datamining for yield\",\"authors\":\"R. van Roijen, Jeffery B. Maxson, Michael Brodfuehrer, Bruce Dyer, Colleen Meagher, M. Dai, J. Ayala, Gasner Barthold, M. Steigerwalt, Lingjie Wang, David McCarthy, Trejo Rust, Randal Bakken\",\"doi\":\"10.23919/MIPRO.2017.7966598\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A small but persistent signal in wafer slot order was observed at functional test, affecting logic yield. Through wafer slot Randomization at several operations in the route a process step within high-k metal gate formation was suspected to be causing the degrade, but conventional approaches did not reveal the root cause. By combining datamining with a thorough analysis of sector and electrical data we identified a defect mechanism exacerbated by the delay between gate metal and polysilicon deposition. By applying a process change, we addressed the issue and achieved yield improvement.\",\"PeriodicalId\":203046,\"journal\":{\"name\":\"2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/MIPRO.2017.7966598\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/MIPRO.2017.7966598","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

在功能测试中观察到一个小而持久的晶圆槽顺序信号,影响逻辑良率。通过在路线中的几个操作中随机化晶圆槽,怀疑高k金属栅极形成中的一个工艺步骤导致了退化,但传统方法并没有揭示根本原因。通过将数据挖掘与扇形和电气数据的全面分析相结合,我们确定了由于栅金属和多晶硅沉积之间的延迟而加剧的缺陷机制。通过应用工艺变更,我们解决了这个问题并实现了产量的提高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Datamining for yield
A small but persistent signal in wafer slot order was observed at functional test, affecting logic yield. Through wafer slot Randomization at several operations in the route a process step within high-k metal gate formation was suspected to be causing the degrade, but conventional approaches did not reveal the root cause. By combining datamining with a thorough analysis of sector and electrical data we identified a defect mechanism exacerbated by the delay between gate metal and polysilicon deposition. By applying a process change, we addressed the issue and achieved yield improvement.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信