R. van Roijen, Jeffery B. Maxson, Michael Brodfuehrer, Bruce Dyer, Colleen Meagher, M. Dai, J. Ayala, Gasner Barthold, M. Steigerwalt, Lingjie Wang, David McCarthy, Trejo Rust, Randal Bakken
{"title":"Datamining for yield","authors":"R. van Roijen, Jeffery B. Maxson, Michael Brodfuehrer, Bruce Dyer, Colleen Meagher, M. Dai, J. Ayala, Gasner Barthold, M. Steigerwalt, Lingjie Wang, David McCarthy, Trejo Rust, Randal Bakken","doi":"10.23919/MIPRO.2017.7966598","DOIUrl":null,"url":null,"abstract":"A small but persistent signal in wafer slot order was observed at functional test, affecting logic yield. Through wafer slot Randomization at several operations in the route a process step within high-k metal gate formation was suspected to be causing the degrade, but conventional approaches did not reveal the root cause. By combining datamining with a thorough analysis of sector and electrical data we identified a defect mechanism exacerbated by the delay between gate metal and polysilicon deposition. By applying a process change, we addressed the issue and achieved yield improvement.","PeriodicalId":203046,"journal":{"name":"2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/MIPRO.2017.7966598","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A small but persistent signal in wafer slot order was observed at functional test, affecting logic yield. Through wafer slot Randomization at several operations in the route a process step within high-k metal gate formation was suspected to be causing the degrade, but conventional approaches did not reveal the root cause. By combining datamining with a thorough analysis of sector and electrical data we identified a defect mechanism exacerbated by the delay between gate metal and polysilicon deposition. By applying a process change, we addressed the issue and achieved yield improvement.