Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges

2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) Pub Date : 2017-05-01 DOI:10.23919/MIPRO.2017.7973391

E. Rolseth, A. Blech, I. Fischer, Youssef Hashad, R. Koerner, K. Kostecki, A. Kruglov, V. Srinivasan, Mathias C. J. Weiser, Torsten Wendav, K. Busch, J. Schulze

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引用次数: 2

Abstract

In this paper we report experimental results on the fabrication and characterization of vertical Ge gate-all-around p-channel TFETs, utilizing GeSn as a channel material. Through two sample series, the potential and challenges of implementing the low-band gap material GeSn are reviewed. It is verified that ION can be effectively enhanced by increasing the Sn-content in the GeSn-channel, due to increasing tunneling probabilities. Further it is found that when limited to a 10 nm δ-layer, Ge0.96Sn0.04 is most beneficial for ION when positioned inside the channel as opposed to in the source, with a maximum of ION = 180 µA/µm at VDS= −2 V and VG = −4 V. Enhanced leakage currents (IOFF), which also degrades the subthreshold swing (SS), is a consequence of a smaller band gap and enhanced defect densities, and represent key challenges with implementing GeSn.

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利用GeSn对Ge栅全隧穿场效应晶体管的器件性能进行调谐:潜力与挑战

本文报道了利用GeSn作为沟道材料，制备和表征垂直Ge栅极全p沟道tfet的实验结果。通过两个系列的样品，回顾了实现低带隙材料GeSn的潜力和挑战。验证了通过增加gsn通道中sn的含量，可以有效地增强离子，这是由于隧道概率的增加。进一步发现，当限制在10 nm δ-层时，Ge0.96Sn0.04最有利于离子在通道内而不是在源内，在VDS=−2 V和VG =−4 V时，最大离子= 180µa /µm。增强的泄漏电流(IOFF)也会降低亚阈值摆幅(SS)，这是更小的带隙和增强的缺陷密度的结果，也是实现GeSn的关键挑战。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)

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