Quan Pan, Yipeng Wang, Zhengxiong Hou, Li Sun, Liang Wu, W. Ki, P. Chiang, C. Yue
{"title":"A 41-mW 30-Gb/s CMOS optical receiver with digitally-tunable cascaded equalization","authors":"Quan Pan, Yipeng Wang, Zhengxiong Hou, Li Sun, Liang Wu, W. Ki, P. Chiang, C. Yue","doi":"10.1109/ESSCIRC.2014.6942038","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2014.6942038","url":null,"abstract":"This paper presents a 65-nm CMOS, 1-V, 1.37-pJ/bit optical receiver with embedded equalizer, enabling adaptability to overcome channel losses and component variations. The digitally-controlled continuous-time linear equalizer (CTLE) consists of three cascaded tunable peaking stages offering 16-dB of adjustable low-frequency gain. Optical measurement results with a 30-Gb/s photodetector (PD) show that the receiver achieves 10-12 BER at 30 Gb/s for a 215-1 PRBS input with a -5.6-dBm input sensitivity. Using a lower bandwidth 14-Gb/s PD, the receiver can still reach 30 Gb/s at 10-12 BER with only a 0.6-dB degradation in input sensitivity. These measurement results demonstrate the effectiveness of the proposed receiver and the programmable cascaded CTLE.","PeriodicalId":202377,"journal":{"name":"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127811516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Francese, T. Toifl, M. Braendli, P. Buchmann, T. Morf, M. Kossel, C. Menolfi, L. Kull, T. Andersen, Hazar Yueksel
{"title":"A 16 Gb/s receiver with DC wander compensated rail-to-rail AC coupling and passive linear-equalizer in 22 nm CMOS","authors":"P. Francese, T. Toifl, M. Braendli, P. Buchmann, T. Morf, M. Kossel, C. Menolfi, L. Kull, T. Andersen, Hazar Yueksel","doi":"10.1109/ESSCIRC.2014.6942115","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2014.6942115","url":null,"abstract":"A 16 Gb/s receiver implemented in 22 nm SOI CMOS technology is reported. The analog frontend accepts a rail-to-rail input common-mode imposed from the transmitter side. It consists of a baseline wander compensated passive linear equalizer that AC-couples the received signal to the subsequent active CTLE with a regulated common-mode level. The programmable passive linear equalizer features a frequency response suitable for low-frequency equalization such as for skin-effect losses. When its zero is programmed at 200 MHz minimum frequency, the measured maximum mid-band peaking is 7 dB. The receiver architecture is half-rate and comprises an 8-tap DFE and a baud-rate CDR. With no FFE at the transmitter, 0.9 Vppd PRBS31 NRZ data are recovered error-free (BER<;10-12) across a copper channel with 34 dB attenuation at 8 GHz.","PeriodicalId":202377,"journal":{"name":"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114186126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Hershberg, K. Raczkowski, K. Vaesen, J. Craninckx
{"title":"A 9.1–12.7 GHz VCO in 28nm CMOS with a bottom-pinning bias technique for digital varactor stress reduction","authors":"B. Hershberg, K. Raczkowski, K. Vaesen, J. Craninckx","doi":"10.1109/ESSCIRC.2014.6942027","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2014.6942027","url":null,"abstract":"A wide tuning range class-B VCO in 28nm CMOS targeted for software defined radio applications demonstrates a technique for minimizing device stress while simultaneously optimizing off-state Q in digitally switched tank capacitor cells. The proposed digital varactor structure can be implemented using only capacitors and NMOS transistors, resulting in a very compact layout. The VCO operates between 9.1 - 12.7 GHz, achieving a tuning range of 32% and phase noise of -163.2 dBc/Hz at 20 MHz offset referred to a 915 MHz carrier while consuming 9.5 mW for a FoM of -187 dBc/Hz.","PeriodicalId":202377,"journal":{"name":"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123491292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Badr Malki, B. Verbruggen, P. Wambacq, K. Deguchi, M. Iriguchi, J. Craninckx
{"title":"A complementary dynamic residue amplifier for a 67 dB SNDR 1.36 mW 170 MS/s pipelined SAR ADC","authors":"Badr Malki, B. Verbruggen, P. Wambacq, K. Deguchi, M. Iriguchi, J. Craninckx","doi":"10.1109/ESSCIRC.2014.6942060","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2014.6942060","url":null,"abstract":"A complementary dynamic single-stage residue amplifier for a pipelined SAR ADC is presented. It re-uses charge typically wasted during the reset phase, and hence improves efficiency by a factor 2× in this block that often dominates the fundamental noise/power trade-off of the ADC. The residue amplifier achieves 90 μVrms input noise for an energy consumption of 1.5 pJ. It is used in a 2-times interleaved 6b coarse/8b fine pipelined SAR ADC. The 40nm CMOS prototype achieves 11 ENOB at 20 MS/s while consuming 165 μW, leading to an energy per conversion step of 4 fJ. It maintains more than 10.8 ENOB at low input frequencies for a clock frequency up to 180 MS/s.","PeriodicalId":202377,"journal":{"name":"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122915094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Single inductor quad output switching converter with priority-scheduled program for fast transient and unlimited-load range in 40nm CMOS technology","authors":"Wei-Chung Chen, Tzu-Chi Huang, Tsu-Wei Tsai, Ruei-Hong Peng, Kuei-Liang Lin, Ke-Horng Chen, Ying-Hsi Lin, Tsung-Yen Tsai, Chen-Chih Huang, Chao-Cheng Lee, Li-Ren Huang, Chao-Jen Huang, C. Hung, Chinder Wey, Hsin-Yu Luo","doi":"10.1109/ESSCIRC.2014.6942048","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2014.6942048","url":null,"abstract":"System-on-a-chip (SoC) applications need multiple power supplies with low noise for analog circuits and high efficiency for digital circuits. Thus, this paper proposes the priority-scheduled program (PSP) for single inductor quad output (SIQO) switching converter to manage energy delivery for four outputs. Consequently, SIQO converter with PSP can provides fast transient response and reduce cross-regulation. Besides, the level bypass detector (LBD) provides unlimited load range between each output through the shared inductor. The PSP cooperates with the LDB to transfer energy to low priority outputs to avoid overshoot at high priority outputs. With the two low-dropout regulator (LDR) working as buffers at low priority outputs, voltage disturbance can be filtered out. The SIQO converter fabricated in 40nm CMOS technology satisfies power requirements in portable electronics with 0.2% low noise, 15μs fast transient response, and cross-regulation smaller than 30mV.","PeriodicalId":202377,"journal":{"name":"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129699050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Schmid, A. Huber, Dirk Sutterlin, Werner Tanner
{"title":"A highly sensitive frontend IC for very robust capacitive vortex flowmeter sensors","authors":"H. Schmid, A. Huber, Dirk Sutterlin, Werner Tanner","doi":"10.1109/ESSCIRC.2014.6942081","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2014.6942081","url":null,"abstract":"This paper presents a capacitive sensor interface IC for vortex flow measurements. With this interface, we can measure flows down to half the minumum flow speed of the state of the art, for media temperatures up to 400°C and pressures up to 200 bar in pipes from 15mm up to 300mm diameter, even in the presence of mechanical vibrations, for media ranging from air over oil to mercury. The mechanical sensor used is very robust in the presence of steam hammers. The sensor IC was realized in 0.35μm CMOS and operates over a temperature range of -50Ω125°C. It adds input-referred noise far below the kT/C noise of the sensor, 1.17 aF/√Hz at fs = 128 kHz. The IC consumes 1.5mA from a 3.3V supply and has an area of 10mm2. The main signal processing problems to solve were the compensation of time-varying offsets up to 8 pF while measuring 60 aF, and the digital detection of signal frequencies at 1.15 dB SNR, done by adaptive filtering. The sensor IC has a production yield of 96.5 %.","PeriodicalId":202377,"journal":{"name":"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116375612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ilter Özkaya, Cagri Gurleyuk, Atilim Ergul, Arda Akkaya, D. Y. Aksin
{"title":"A 50V input range 14bit 250kS/s ADC with 97.8dB SFDR and 80.2dB SNR","authors":"Ilter Özkaya, Cagri Gurleyuk, Atilim Ergul, Arda Akkaya, D. Y. Aksin","doi":"10.1109/ESSCIRC.2014.6942024","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2014.6942024","url":null,"abstract":"A 50V input range, common-mode and differential, 14bit 2-step SAR ADC is presented. The ADC operating at 250kS/s for a 50VPP input signal on a 15V common-mode voltage achieves 97,8dB SFDR and 80:2dB SNR, while consuming 4.29mW from a single 3.3V supply. The 2-step architecture accomplishes an increase in resolution by reusing conversion residue, with a time-shared configurable amplifier/comparator block and SAR hardware. The high SFDR figure achieved without trimming, calibration or tuning asserts the linearity of the implemented high-voltage bootstrapped switch and the capacitive DAC array. The ADC provides an alternative, lower-power solution to high voltage data acquisition, by removing the need for off chip or silicon expensive components.","PeriodicalId":202377,"journal":{"name":"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127117170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Cong, P. Karande, Jonathan Landes, Rob Corey, S. Stanslaski, W. Santa, R. Jensen, Forrest Pape, D. Moran, T. Denison
{"title":"A 32-channel modular bi-directional neural interface system with embedded DSP for closed-loop operation","authors":"P. Cong, P. Karande, Jonathan Landes, Rob Corey, S. Stanslaski, W. Santa, R. Jensen, Forrest Pape, D. Moran, T. Denison","doi":"10.1109/ESSCIRC.2014.6942031","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2014.6942031","url":null,"abstract":"A prototype bi-directional neural interface system is presented with closed-loop and embedded DSP capabilities. The system includes 32-electrode stimulation capability, eight multiplexed low-noise low-power bio-potential sensing channels with on-chip digital FFT, and a Cortex M3-based microcontroller for implementing closed-loop algorithms. The stimulation subsystem can provide a maximum stimulation current of 12mA with approximately 3% accuracy per channel. The sensing subsystem uses a fully differential chopping amplifier achieving a noise floor <;100nV/rtHz with approximately 1μA current from 2V supply. A 13bit continuous-time sigma-delta ADC is used to sample the amplifier output at the rate of 33kHz. The ADC consumes approximately 100nA while achieving an ENOB of 12b with a 250Hz date rate. A hardware implementation of a cached-FFT is included in the sensing IC to perform spectral analysis of the bio-potential signal. The resulting multiple spectral signatures can be selectively sent to the microcontroller allowing for algorithmic control of the stimulator system. The system partition was designed to minimize overall computational power while providing user flexibility. The sensing performance of the prototype has been demonstrated with 2-D cursor control in a non-human primate brain machine interface (BMI) model using 20 features simultaneously.","PeriodicalId":202377,"journal":{"name":"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128934818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Part-time resonant switching for light load efficiency improvement of a 3-level fully integrated buck converter","authors":"W. Godycki, Bo-Jhang Sun, A. Apsel","doi":"10.1109/ESSCIRC.2014.6942047","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2014.6942047","url":null,"abstract":"Fully integrated 3-level converters can provide efficient steep step down conversion ratios for on-chip digital loads such as CMPs, due to their combination of advantages of both switched capacitor and buck converters. Previous work has demonstrated monolithic designs with good efficiency at driving high current loads. However, efficiency of these converters suffers at low voltages and currents, making it difficult to drive processor sleep states. In this paper we demonstrate a part-time resonant switching scheme for a fully integrated 3-level converter in standard 65nm CMOS. The 1.9×1.1mm2 design operates from a 1.8V input and provides up to 400mA using 2 phases with continuous conduction mode. By using real time peak current detection and flyback capacitor voltage positioning, the converter achieves up to 64% efficiency for less than 0.7V output with sub-40mA current levels. Measurements show that this is a 60-80% improvement in efficiency compared to the same converter with traditional DCM mode. This results in an extension of the efficient operation range of 3-level converters supporting DVFS and potentially significant energy savings when powering microprocessor sleep states.","PeriodicalId":202377,"journal":{"name":"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)","volume":"295 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127497392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A robust start-up Class-C CMOS VCO based on a common mode low frequency feedback loop","authors":"Stefano Perticaroli, F. Palma","doi":"10.1109/ESSCIRC.2014.6942093","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2014.6942093","url":null,"abstract":"Many Class-C CMOS VCOs have been introduced in the last decade claiming to achieve improved phase noise performance and power efficiency with apparently no tradeoff, however only in the past two years implementation efforts have been focused on stability related issues of such oscillator architectures. In fact, oscillators exploiting time-varying bias techniques may present several stability points and for this reason dedicated start-up circuits are needed to reach the desired periodic steady state regime. In this paper we introduce a novel stabilization technique for a CMOS VCO polarized in Class-C via a common mode feedback loop with the aim to ensure a robust start-up with no significant phase-noise and power efficiency degradation. The VCO core is based on a crossed pair of NMOS devices refilling a symmetric resonator with a center tapered inductor and biased by a top PMOS current generator. The proposed Class-C VCO is implemented in a RF 55nm CMOS technology and is tunable over the frequency band 6.6-8.2 GHz with average phase noise lower than -127 dBc/Hz @ 1 MHz offset and mean power consumption of 18mW, for a state-of-the-art figure-of-merit of -190 dBc/Hz @ 1 MHz offset.","PeriodicalId":202377,"journal":{"name":"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)","volume":"166 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116597286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}