ITHERM 2000. The Seventh Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Cat. No.00CH37069)最新文献_第10页

Test and evaluation of chip-to-chip attachment of MEMS devices MEMS器件片对片连接的测试与评估

ITHERM 2000. The Seventh Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Cat. No.00CH37069) Pub Date : 2000-05-23 DOI: 10.1109/ITHERM.2000.866819

P. Sandborn, R. Swaminathan, G. Subramanian, M. Deeds, K. Cochran

{"title":"Test and evaluation of chip-to-chip attachment of MEMS devices","authors":"P. Sandborn, R. Swaminathan, G. Subramanian, M. Deeds, K. Cochran","doi":"10.1109/ITHERM.2000.866819","DOIUrl":"https://doi.org/10.1109/ITHERM.2000.866819","url":null,"abstract":"In the IC industry, the bond layer serves as the foundation and often the weak link in the reliability of chip packages. MEMS packages are likely to have a greater number of bond layers with more stringent requirements. The additional bond layers arise from multiple interfaces inside the package. The bond layers in MEMS devices often must maintain precise component or chip alignment. In addition, the bond layers may have to withstand loading from both the macroenvironment and loading within the package. This paper presents the bond requirements for a MEMS based Safety and Arming (S&A) device. The S&A system requires precise alignment between a micromachined silicon chip, a patterned Alumina ceramic chip, and a deflection delimiter. Several candidate designs were subjected to a series of environmental tests including thermal cycling, accelerated stress tests, mechanical shock, and combinations of the above conditions. A Scanning Acoustic Microscope (SAM) is utilized to measure initial delamination and to identify incremental damage due to environmental exposure. The tests are ultimately used to rank the suitability of the bond layer material for chip-to-chip attachment with large coefficient of expansion differences. Tested bond materials include epoxy, thermoplastic, and solder.","PeriodicalId":201262,"journal":{"name":"ITHERM 2000. The Seventh Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Cat. No.00CH37069)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126695801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Electronic cooling technology with use of turbulent impinging jets 利用紊流冲击射流的电子冷却技术

ITHERM 2000. The Seventh Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Cat. No.00CH37069) Pub Date : 2000-05-23 DOI: 10.1109/ITHERM.2000.866845

R. Amano

引用次数: 3

Study of thermal characteristics on solder and adhesive bonded folded fin heat sink 焊料与粘合剂结合折叠翅片散热器热特性研究

ITHERM 2000. The Seventh Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Cat. No.00CH37069) Pub Date : 2000-05-23 DOI: 10.1109/ITHERM.2000.866162

C. K. Loh, Bor-Bin Chou, D. Nelson, D. Chou

{"title":"Study of thermal characteristics on solder and adhesive bonded folded fin heat sink","authors":"C. K. Loh, Bor-Bin Chou, D. Nelson, D. Chou","doi":"10.1109/ITHERM.2000.866162","DOIUrl":"https://doi.org/10.1109/ITHERM.2000.866162","url":null,"abstract":"The rapid advancement in technology of microprocessors has led electronics thermal system designers to pay increased attention to the folded fin heat sink. The advantages of using a folded fin heat sink are light weight, low profile, and small footprint. There are three manufacturing methods for bonding the folded fin to the base of heat sink: adhesive bonding, soldering, and brazing. Brazing is a high temperature process which takes place at around 550/spl deg/C. The major concern with using the brazing process to manufacture heat sinks is dimensional deformation. The adhesive process, on the other hand, requires only sub 200/spl deg/C or room temperature curing process. However, its thermal contact resistance at the joint is higher than others. Solder bonding is an alternative solution to above problems. The soldering process requires much lower temperature, less than 200/spl deg/C, yet it gives excellent thermal contact and bond strength at the joint. This paper presents the theoretical study of thermal contact resistance at the joint between the folded fin base and the spreader plate of heat sink, and also presents the experimental results which support this theory.","PeriodicalId":201262,"journal":{"name":"ITHERM 2000. The Seventh Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Cat. No.00CH37069)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124173892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Electronic package thermal response prediction to power surge 电涌下电子封装热响应预测

ITHERM 2000. The Seventh Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Cat. No.00CH37069) Pub Date : 2000-05-23 DOI: 10.1109/ITHERM.2000.866216

Yong Li Xu, R. Stout, D. Billings

引用次数: 3

Measurement of thermally induced strains on flip chip and chip scale packages 倒装芯片和芯片级封装上热致应变的测量

ITHERM 2000. The Seventh Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Cat. No.00CH37069) Pub Date : 2000-05-23 DOI: 10.1109/ITHERM.2000.866196

D. Vogel, E. Kaulfersch, J. Simon, R. Kuhnert, A. Schubert, B. Michel

{"title":"Measurement of thermally induced strains on flip chip and chip scale packages","authors":"D. Vogel, E. Kaulfersch, J. Simon, R. Kuhnert, A. Schubert, B. Michel","doi":"10.1109/ITHERM.2000.866196","DOIUrl":"https://doi.org/10.1109/ITHERM.2000.866196","url":null,"abstract":"The authors developed and made use of the microDAC deformation measurement technique to determine strain fields on thermally stressed, cross sectioned FC and CSP specimens. The method allows one to resolve strain fields inside tiny structures like e.g. solder interconnects or conductive adhesive layers. It is based on comparison of digitized micrographs obtained from different object load states. Optical, SEM and laser scanning microscopy are applied for image capture. The paper presents results of strain analysis in interconnects of different flip chip configurations and chip scale package types e.g., global shear of outward bumps is almost completely suppressed in most flip chip cases by underfilling. Furthermore, bump deformation can be strongly influenced by the local appearance of glass fabrics in organic laminates used as board materials. A main demand on chip scale package reliability is the avoidance of too large thermal solder ball strains, which lead to material fatigue. Different packages with rigid and flex interposers tackle the stress compensation problem in a different way. A first attempt is made to compare some of them based on experimental strain and warpage measurements.","PeriodicalId":201262,"journal":{"name":"ITHERM 2000. The Seventh Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Cat. No.00CH37069)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128335323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

A new power module packaging technology for enhanced thermal performance 一种新的功率模块封装技术，可增强热性能

ITHERM 2000. The Seventh Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Cat. No.00CH37069) Pub Date : 2000-05-23 DOI: 10.1109/ITHERM.2000.866204

B. Ozmat, C. Korman, P. McConnelee, M. Kheraluwala, E. Delgado, R. Fillion

引用次数: 23

Modeling of the thermal and hydraulic performance of plate fin, strip fin, and pin fin heat sinks-influence of flow bypass 板翅片、条形片和针翅片散热器的热工性能建模——流动旁通的影响

ITHERM 2000. The Seventh Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Cat. No.00CH37069) Pub Date : 2000-05-23 DOI: 10.1109/ITHERM.2000.866825

H. Jonsson, B. Moshfegh

{"title":"Modeling of the thermal and hydraulic performance of plate fin, strip fin, and pin fin heat sinks-influence of flow bypass","authors":"H. Jonsson, B. Moshfegh","doi":"10.1109/ITHERM.2000.866825","DOIUrl":"https://doi.org/10.1109/ITHERM.2000.866825","url":null,"abstract":"Tests have been conducted in a wind tunnel with seven types of heat sinks including plate fin, strip fill, and pin fin heat sinks. In the case of strip fin, and pin fin heat sinks, both inline and staggered arrays have been studied. The pin fin heat sinks had circular and square cross-sections. For each type, tests were run with fin heights (H) of 10, 15, and 20 mm while the heat sink width (B) was kept constant and equal to 52.8 mm. In total, 42 different heat sinks were tested. The width of the wind tunnel duct (CB) was varied in such a way that results were obtained for B/CB=0.84, 0.53, and 0.33. The wind tunnel height (CH) was varied similarly, and data were recorded for H/CH=1, 0.67, and 0.33 while the duct Reynolds number was varied between 2000 through 14000. An empirical bypass correlation has been developed for the different fin designs. The correlation predicts the Nusselt number and the dimensionless pressure drop and takes into account the influence of duct height, duct width, fin height, fin thickness, and fin-to-fin distance. The correlation parameters are individual for each fin design. Further, a physical bypass model for plate fin heat sinks has been developed to describe the bypass effect.","PeriodicalId":201262,"journal":{"name":"ITHERM 2000. The Seventh Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Cat. No.00CH37069)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133460439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 147

Performance analysis of an enhanced PCM thermal control unit 增强型PCM热控制单元的性能分析

ITHERM 2000. The Seventh Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Cat. No.00CH37069) Pub Date : 2000-05-23 DOI: 10.1109/ITHERM.2000.866837

E. Alawadhi, C. Amon

引用次数: 48

Characterisation of die attach for power devices using thermal impedance measurement practice and experiment 用热阻抗测量实践和实验表征功率器件的贴片特性

ITHERM 2000. The Seventh Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Cat. No.00CH37069) Pub Date : 2000-05-23 DOI: 10.1109/ITHERM.2000.866218

M. Ludwig, A. Gaedke, O. Slattery, J. Flannery, S. O'Mathuna

{"title":"Characterisation of die attach for power devices using thermal impedance measurement practice and experiment","authors":"M. Ludwig, A. Gaedke, O. Slattery, J. Flannery, S. O'Mathuna","doi":"10.1109/ITHERM.2000.866218","DOIUrl":"https://doi.org/10.1109/ITHERM.2000.866218","url":null,"abstract":"This paper describes a technique for measuring cooling curves at power levels of up to 65 W. The paper describes in detail a suitable constant temperature fixture to keep a test vehicle at a constant temperature for these power levels. In this experiment a power diode in bare die form is used as the heating source. The diode V/sub f/ is used for junction temperature sensing. The cooling curve method of temperature characterisation is used at this power level because heating curves are difficult to measure when special designed thermal test chips are not available. A special test vehicle was designed to obtain equal temperature distribution across the test diode. The test vehicle has a three layer structure to minimise the number of thermal layers. This enables a more precise cooling curve analysis later in this project. The experimental results were correlated through the use of CFD models. From these CFD models, the thermal resistance and thermal capacitance of the die attach layer can be evaluated. This experiment is part of a project, the objective of which is to thermally characterise die-attach materials for power applications.","PeriodicalId":201262,"journal":{"name":"ITHERM 2000. The Seventh Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Cat. No.00CH37069)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133530363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

N- and P-type SiGe/Si superlattice coolers N型和p型SiGe/Si超晶格冷却器

ITHERM 2000. The Seventh Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Cat. No.00CH37069) Pub Date : 2000-05-23 DOI: 10.1109/ITHERM.2000.866840

Xiaofeng Fan, G. Zeng, E. Croke, G. Robinson, C. LaBounty, A. Shakouri, J. Bowers

{"title":"N- and P-type SiGe/Si superlattice coolers","authors":"Xiaofeng Fan, G. Zeng, E. Croke, G. Robinson, C. LaBounty, A. Shakouri, J. Bowers","doi":"10.1109/ITHERM.2000.866840","DOIUrl":"https://doi.org/10.1109/ITHERM.2000.866840","url":null,"abstract":"SiGe is a good thermoelectric material for high temperature applications. In this paper the fabrication and characterization of single-element SiGe/Si superlattice coolers of both n- and p-type devices are described for room temperature applications. Superlattice structures were used to enhance the device performance by reducing the thermal conductivity between the hot and the cold junctions, and by providing selective removal of hot carriers through thermionic emission. The structure of the samples consisted of a 3 /spl mu/m thick symmetrically strained Si/sub 0.7/Ge/sub 0.3//Si superlattice grown on a buffer layer designed so that the in-plane lattice constant is approximately that of relaxed Si/sub 0.9/Ge/sub 0.1/. Cooling by 1.7 K for n-type device and by 1.9 K for p-type device at room temperature was measured, corresponding to cooling power densities of hundreds of watts per square centimeter. The results show that the packaged devices of both n and p coolers can work together in similar optimal conditions. This paves the road to fabricate n- and p-type superlattice coolers in an array format electrically in series and thermally in parallel, similar to conventional thermoelectric devices, and thus achieve large cooling capacities with relatively small currents.","PeriodicalId":201262,"journal":{"name":"ITHERM 2000. The Seventh Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Cat. No.00CH37069)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115373661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5