Physica B-condensed Matter最新文献

{"title":"Tailoring the optical nonlinearity and photovoltaic response of Bi-doped ZnO thin films","authors":"Mohamed Amine Hachimi ,&nbsp;Amal Tarbi ,&nbsp;Agnieszka Popenda ,&nbsp;Hassane Erguig ,&nbsp;Abdelhadi El-Bachiri ,&nbsp;Taoufik Garmim ,&nbsp;Dominique Guichaoua ,&nbsp;Said Taboukhat ,&nbsp;Bouchta Sahraoui","doi":"10.1016/j.physb.2026.418368","DOIUrl":"10.1016/j.physb.2026.418368","url":null,"abstract":"<div><div>ZnO thin films with Bi concentrations ranging from 0 to 5 at.% were synthesized on glass substrates using the sol-gel spin-coating technique. The effect of Bi incorporation on the optical and nonlinear optical (NLO) properties of ZnO was investigated. UV–Vis analysis revealed a blue-shift in the bandgap from 3.74 to 3.94 eV, attributed to the Burstein-Moss effect and Bi-induced lattice distortions. Third-harmonic generation (THG) measurements performed using the Maker fringe method with a picosecond Nd:YAG laser revealed a non-monotonic variation in the third-order nonlinear susceptibility <span><math><mrow><msup><mi>χ</mi><mrow><mo>(</mo><mn>3</mn><mo>)</mo></mrow></msup></mrow></math></span>, demonstrating that Bi incorporation effectively tunes the nonlinear optical response. To explore its photovoltaic potential, a SCAPS-1D simulation was performed for an FTO/ZnO:Bi/CdS/CZTS/Au structure. The results revealed stable device performance with a power conversion efficiency (PCE) of approximately 25.4%, confirming that Bi doping preserves efficient carrier transport and favorable band alignment. These combined results highlight that Bi-doped ZnO is a promising multifunctional material for advanced photonic and photovoltaic applications.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"727 ","pages":"Article 418368"},"PeriodicalIF":2.8,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146171074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comprehensive frequency and voltage analysis of a BODIPY-based organic interlayer in Au/n-Si Schottky structures","authors":"Serkan Eymur ,&nbsp;Esra Akköse Aydemir ,&nbsp;Ömer Faruk Yüksel ,&nbsp;Nihat Tuğluoğlu","doi":"10.1016/j.physb.2026.418360","DOIUrl":"10.1016/j.physb.2026.418360","url":null,"abstract":"<div><div>An Au/BOD-Z-EN/n-Si Schottky diode incorporating a BODIPY-based organic interfacial layer was fabricated and examined under dark conditions. Electrical measurements were performed in the 2 kHz–10 MHz frequency range under forward biases from 0 to 1 V. The dielectric constant, loss tangent, electric modulus, impedance, and phase angle exhibited strong frequency and voltage dependence. At low frequencies, the response was governed by interfacial states and polarization effects, while at higher frequencies these contributions diminished, yielding stable dielectric behavior. Forward bias enhanced carrier injection, reduced interfacial trapping, and shifted the device from capacitive to resistive response. This work provides a comprehensive and systematic frequency- and bias-dependent dielectric and impedance analysis of an Au/BOD-Z-EN/n-Si Schottky diode under dark conditions, offering detailed insight into the role of a BODIPY-based organic interfacial layer in charge transport, dielectric relaxation, and interface state dynamics.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"727 ","pages":"Article 418360"},"PeriodicalIF":2.8,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146170998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The role of Rashba spin-orbit coupling in multilayer MoS2 exploring spin transport dynamics","authors":"Prerona Singha,&nbsp;P.K. Kalita","doi":"10.1016/j.physb.2026.418367","DOIUrl":"10.1016/j.physb.2026.418367","url":null,"abstract":"<div><div>We investigated the dynamics of spin transport in multilayer MoS₂ devices by calculating Rashba spin-orbit coupling effects, electric field impact, temperature effects, and the influence of layer thickness on the multilayered system. With a tight-binding Hamiltonian framework, incorporating with NEGF formalism, spin relaxation mechanisms are simulated using the decay along device lengths of up to 2 μm for spin vector components, (<em>S</em>_<em>x</em><em>, S</em>_<em>y</em><em>, S</em>_<em>z</em>). The findings show a thickness-dependent Rashba SOC, where thicker layers preserve spin coherence over longer distances while thinner layers show faster spin relaxation because of stronger SOC. Spin relaxation rates are modulated by temperature and electric field, providing spintronic applications with tunability. These results give insight on how to improve spintronic devices based on MoS₂.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"727 ","pages":"Article 418367"},"PeriodicalIF":2.8,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146171019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"First-principles study of mixed-halide perovskites RbSrBr3−xIx: Tuning physical properties through halide alloying","authors":"Rinku Majumder ,&nbsp;Arpon Chakraborty ,&nbsp;Md. Ahasan Habib ,&nbsp;Md. Salahuddin Mina ,&nbsp;Md. Torikul Islam ,&nbsp;Mst. Tanjum Islam ,&nbsp;Ratna Saha","doi":"10.1016/j.physb.2026.418369","DOIUrl":"10.1016/j.physb.2026.418369","url":null,"abstract":"<div><div>This study employs first-principles density functional theory using GGA-PBE and hybrid HSE06 functionals to systematically investigate halide substitution effects on the structural, electronic, elastic, and optical properties of mixed-halide perovskites RbSrBr<span><math><msub><mrow></mrow><mrow><mn>3</mn><mo>−</mo><mi>x</mi></mrow></msub></math></span>I<span><math><msub><mrow></mrow><mrow><mi>x</mi></mrow></msub></math></span> (<span><math><mrow><mi>x</mi><mo>=</mo><mn>0</mn></mrow></math></span> to 3). Progressive replacement of Br<span><math><msup><mrow></mrow><mrow><mo>−</mo></mrow></msup></math></span> with I<span><math><msup><mrow></mrow><mrow><mo>−</mo></mrow></msup></math></span> induces a 7.7% lattice expansion and a phase transition from cubic to tetragonal, followed by a return to the cubic phase at full iodination. All compositions are thermodynamically, mechanically, and dynamically stable, as confirmed by negative formation energies, tolerance factors, Born stability criteria, and <em>ab initio</em> molecular dynamics. The band gap remains indirect, decreasing from 4.94 eV to 4.20 eV with increasing iodine content. Bulk modulus decreases from 16.9 GPa to 13.1 GPa, indicating softer bonding in I-rich phases. Optical studies reveal strong compositional dependence of absorption and dielectric properties, making these materials promising candidates for UV photodetectors, UV-responsive sensors, and radiation-shielding coatings.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"727 ","pages":"Article 418369"},"PeriodicalIF":2.8,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146171006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preformed pairs approach to the mass of the charge carrier in YBa2Cu3O6+x cuprate","authors":"S.M. Otajonov ,&nbsp;D.G‘. Khajibaev ,&nbsp;I.J. Jaksimuratov ,&nbsp;D.E. Uskenbaev ,&nbsp;E. Kh Karimbaev ,&nbsp;B. Ya Yavidov","doi":"10.1016/j.physb.2026.418383","DOIUrl":"10.1016/j.physb.2026.418383","url":null,"abstract":"<div><div>This paper examines how the charge-carrier mass in <span><math><mrow><msub><mrow><mi>YBa</mi></mrow><mrow><mn>2</mn></mrow></msub><msub><mrow><mi>Cu</mi></mrow><mrow><mn>3</mn></mrow></msub><msub><mrow><mi>O</mi></mrow><mrow><mn>6</mn><mo>+</mo><mi>x</mi></mrow></msub></mrow></math></span> varies with hole concentration <span><math><mi>p</mi></math></span> within the bipolaron framework of high-<span><math><msub><mrow><mi>T</mi></mrow><mrow><mi>c</mi></mrow></msub></math></span> superconductivity. We calculate the three-dimensional polaron mass <span><math><mrow><msub><mrow><mi>m</mi></mrow><mrow><mi>p</mi></mrow></msub><mrow><mo>(</mo><mi>p</mi><mo>)</mo></mrow></mrow></math></span> and the in-plane polaron mass <span><math><mrow><msub><mrow><mi>m</mi></mrow><mrow><mi>p</mi></mrow></msub><mrow><mo>(</mo><mi>p</mi><mo>,</mo><mi>a</mi><mi>b</mi><mo>)</mo></mrow></mrow></math></span> across a range of doping levels, incorporating the <span><math><mi>p</mi></math></span>-dependent superconducting critical temperature <span><math><mrow><msub><mrow><mi>T</mi></mrow><mrow><mi>c</mi></mrow></msub><mrow><mo>(</mo><mi>p</mi><mo>)</mo></mrow></mrow></math></span> and mass anisotropy factor <span><math><mrow><msubsup><mrow><mi>γ</mi></mrow><mrow><mi>m</mi></mrow><mrow><mn>2</mn></mrow></msubsup><mo>=</mo><msubsup><mrow><mi>m</mi></mrow><mrow><mi>c</mi></mrow><mrow><mo>∗</mo></mrow></msubsup><mo>/</mo><msubsup><mrow><mi>m</mi></mrow><mrow><mi>a</mi><mi>b</mi></mrow><mrow><mo>∗</mo></mrow></msubsup></mrow></math></span>. As expected, the behavior of <span><math><mrow><msub><mrow><mi>m</mi></mrow><mrow><mi>p</mi></mrow></msub><mrow><mo>(</mo><mi>p</mi><mo>)</mo></mrow></mrow></math></span> shows a strong inverse correlation with the superconducting critical temperature, reflecting the relation <span><math><mrow><msub><mrow><mi>m</mi></mrow><mrow><mi>p</mi></mrow></msub><mrow><mo>(</mo><mi>p</mi><mo>)</mo></mrow><mo>∼</mo><msubsup><mrow><mi>T</mi></mrow><mrow><mi>BEC</mi></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msubsup><mrow><mo>(</mo><mi>p</mi><mo>)</mo></mrow><mo>≈</mo><msubsup><mrow><mi>T</mi></mrow><mrow><mi>c</mi></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msubsup><mrow><mo>(</mo><mi>p</mi><mo>)</mo></mrow></mrow></math></span>. In contrast, lattice anisotropy makes the two-dimensional polaron mass increase monotonically with doping. The calculated in-plane polaron masses are compared with theoretical estimates and experimental measurements, showing good consistency at moderate and optimal hole contents. These findings support the usefulness of the preformed-pair concept for understanding the high-<span><math><msub><mrow><mi>T</mi></mrow><mrow><mi>c</mi></mrow></msub></math></span> superconductivity in YBa₂Cu₃O<span><math><msub><mrow></mrow><mrow><mn>6</mn><mo>+</mo><mi>x</mi></mrow></msub></math></span>.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"727 ","pages":"Article 418383"},"PeriodicalIF":2.8,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146171108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Many-body effects in sulfur-doped carbon nitride quantum dots: Bandgap modulation and photoluminescence tuning","authors":"Lixin Liao ,&nbsp;Hongyi Luo ,&nbsp;Hong Ouyang ,&nbsp;Xuelin Wei ,&nbsp;Zitao Zhang ,&nbsp;Baoxing Ling ,&nbsp;Yidi Wang ,&nbsp;Fengzhen Lv ,&nbsp;Jun Liu ,&nbsp;Changming Zhu ,&nbsp;Wenjie Kong ,&nbsp;Qiwei Zhang ,&nbsp;Fuchi Liu ,&nbsp;Yong Yang","doi":"10.1016/j.physb.2026.418354","DOIUrl":"10.1016/j.physb.2026.418354","url":null,"abstract":"<div><div>Bandgap engineering of carbon nitride quantum dots (CNQDs) is crucial for optoelectronic applications. Here, sulfur-doped CNQDs (SCNQDs) are prepared hydrothermally with tunable photoluminescence (PL). Under 250 nm excitation, the main PL peak shifts from 367 nm (3.38 eV) for undoped CNQDs to 432.6 nm (2.87 eV) for SCNQDs, i.e., a red-shift of 65.6 nm (0.51 eV). This red-shift, which varies nonlinearly with S content, is attributed to additional electron–ion and electron–electron interactions introduced by S and H atoms in the carbon framework. Density functional theory (DFT) calculations show that the first optical transition energy decreases from 0.79 eV to 0.06–0.27 eV upon S doping, evidencing strong bandgap modulation. GW calculations further reveal that the self-energy of the band-edge destination state becomes more negative with S doping and is partially compensated by co-doped H. Thus, PL tuning arises from many-body energy level renormalization, rather than simple rigid bandgap narrowing.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"727 ","pages":"Article 418354"},"PeriodicalIF":2.8,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146171112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"First-principles study of Al substitution at Ga(II)-site in β-Ga2O3: Enhanced mechanical strength and phonon-related thermal indicators for power electronics","authors":"Alieu Jallow ,&nbsp;Fabi Zhang ,&nbsp;Tangyou Sun ,&nbsp;Zanhui Chen ,&nbsp;Xingpeng Liu ,&nbsp;Xing Deng ,&nbsp;Peihua Wangyang ,&nbsp;Jingchuan Zhu ,&nbsp;Xie Shifeng ,&nbsp;Haiou Li","doi":"10.1016/j.physb.2026.418330","DOIUrl":"10.1016/j.physb.2026.418330","url":null,"abstract":"<div><div>Aluminum-doped β-gallium oxide (β-Ga₂O₃) is a promising ultrawide bandgap semiconductor for high-power applications due to its mechanical and thermal resilience. This study employs first-principles density functional theory (DFT) using the CASTEP code with the PBEsol functional to evaluate the structural, electronic, and mechanical properties of β-Ga2O3 fully substituted with Al at Ga(II) octahedral sites under hydrostatic pressures ranging from −5 to +5 GPa. The results reveal enhanced stiffness, with the bulk modulus increasing from 122.5 to 163.3 GPa and Young's modulus from 201.6 to 233.6 GPa. Electronic band structures, corrected using a 2 eV scissor operator, revealed a widening of the bandgap with increasing compressive pressure, reaching 5.15 eV at +5 GPa. Mulliken population analysis and charge density maps reveal stronger Al-O bonding and increased covalency compared to the replaced Ga(II)-O bonds. While direct thermal conductivity calculations were not performed, consistently high Debye temperatures (626–667 K) and bond stiffening suggest potential improvements in phonon-mediated heat transport; however, these trends are indicative rather than conclusive. The results highlight Ga(II)-specific Al substitution as a practical approach to enhancing mechanical robustness and tunable electronic properties in β-(Al_xGa_1-x)₂O₃ in high-voltage, thermomechanically robust power electronic devices.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"727 ","pages":"Article 418330"},"PeriodicalIF":2.8,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146171007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improved dielectric and photocatalysis response of Ni-Ca co-doped Co3O4 nanoparticles","authors":"I. Hussain,&nbsp;M. Qasim,&nbsp;Haleema Taj,&nbsp;M. Shahid,&nbsp;K. Nadeem,&nbsp;Muqadas Khan,&nbsp;Saba Zafar","doi":"10.1016/j.physb.2026.418320","DOIUrl":"10.1016/j.physb.2026.418320","url":null,"abstract":"<div><div>In this article, we have reported improved dielectric and photocatalytic response of undoped and Ni-Ca co-doped Co₃O₄ nanoparticles. The Rietveld refinement of XRD data indicated pure spinel phase formation of Co₃O₄ NPs. A slight decrease in average crystallite size from 23 to 20 nm with co-doping was observed. FTIR analysis showed two characteristic dips at 610 and 695 cm⁻¹, representing Co³⁺-O and Co²⁺-O vibrational bands of Co₃O₄. UV analysis indicated a slight decrease in bandgap from 3.9 to 3.7 eV by co-doping due to renormalization and band tailing effect. Dielectric constant was increased with co-doping, especially for 4 % Ni and 4 % Ca sample due to a non-Debye relaxation mechanism and different electrical nature of co-dopants. AC-conductivity was abruptly increased due to the increase in the charge carriers with co-doping. Photocatalysis experiment for the degradation of methyl orange dye gave the overall highest degradation efficiency 92.9 % with co-doping due to increased electron-hole pair generation.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"727 ","pages":"Article 418320"},"PeriodicalIF":2.8,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146170948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Designing transparent, lead-free radiation shielding glass through controlled Ba-induced network engineering","authors":"Dalal Abdullah Aloraini ,&nbsp;W.A. Abu-raia ,&nbsp;Aly Saeed","doi":"10.1016/j.physb.2026.418357","DOIUrl":"10.1016/j.physb.2026.418357","url":null,"abstract":"<div><div>A novel barium zinc borosilicate (BSiZnBa) glass was synthesized to advance the design of next-generation transparent radiation-shielding materials. The influence of BaO substitution (40–55 mol%; BSiZnBa1-BSiZnBa4) on structural, mechanical, optical, and attenuation properties was comprehensively investigated. XRD verified the amorphous structure, while FTIR revealed the depolymerization of the borosilicate network via BO₄→BO₃ conversion. Increasing BaO content led to mass-driven densification without significant volume contraction, accompanied by a modest reduction in elastic moduli. Optical analysis showed band gap narrowing (3.10 → 2.55 eV) and increased Urbach energy, consistent with growing structural disorder. All glasses displayed high visible-light transparency, demonstrating that enhanced radiation attenuation can be achieved without compromising optical clarity. Gamma ray shielding performance improved significantly with Ba enrichment, as reflected by higher attenuation coefficients and lower half-value layers. The optimized BSiZnBa4 glass demonstrated superior attenuation efficiency with high optical transparency, positioning this system as a promising eco-friendly alternative to lead-based shielding materials.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"727 ","pages":"Article 418357"},"PeriodicalIF":2.8,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146170999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Strain engineering for significantly enhanced electron transport in monolayer arsenene","authors":"Xiaomei Zhang ,&nbsp;Yongxiu Wang ,&nbsp;Xin Ma ,&nbsp;Xiaohui Zhou ,&nbsp;Chenhai Shen ,&nbsp;Congxin Xia ,&nbsp;Yufang Liu","doi":"10.1016/j.physb.2026.418296","DOIUrl":"10.1016/j.physb.2026.418296","url":null,"abstract":"<div><div>Two-dimensional (2D) layered semiconductors are emerging as promising materials for next-generation electronics, but their development is hampered by typically low intrinsic carrier mobility. Herein, we have systematically investigated the carrier transport in monolayer arsenene by integrating first-principles calculations with the <strong><em>ab initio</em></strong> Boltzmann transport theory. The predicted hole mobility of 768 cm²V⁻¹s⁻¹ at room temperature is clearly larger than that in common 2D semiconductors. A mode-by-mode analysis of scattering rates reveals that the hole transport is primarily limited by out-of-plane optical (ZO) phonons. We further demonstrate that the carrier transport in arsenene could be significantly enhanced through applying biaxial tensile strain. When applied strain exceeds 3 %, the optimal transport performance has been achieved. The obtained electron mobility of ∼1500 cm²V⁻¹s⁻¹ renders arsenene more appealing in practical application. Strain-induced indirect-to-direct bandgap transition is identified as the primary mechanism for the enhanced electron transport. In particular, the resultant isotropic and parabolic band structure with exceptionally small effective masses emerges as the crucial factor, which not only ensures high band velocity but also confers a low density of states (DOS) that severely limits available phase space for electron scattering. These findings advance the understanding of carrier transport in monolayer arsenene. The superior electron transport and bandgap characteristics under strain render arsenene highly promising for future electronic devices.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"727 ","pages":"Article 418296"},"PeriodicalIF":2.8,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}