Performance analysis of reconfigurable magnetic tunnel junction based on SGS and HMM materials under bias voltages in VSe2/hBN/MnSe2

Magnetic tunnel junctions (MTJs) are key components in spintronic devices, where performance is strongly influenced by the choice of electrode and barrier materials. This work investigates a reconfigurable MTJ based on a VSe₂/hBN/MnSe₂ heterostructure using first-principles and quantum transport simulations. VSe₂ acts as a spin-gapless semiconductor, MnSe₂ as a half-metallic magnet, and hBN as a two-dimensional tunneling barrier. The device demonstrates an inverse tunnel magnetoresistance (TMR) effect with diode-like behavior across −0.5 to 0.5 V. A maximum TMR of 2060.01 % is obtained at −0.5 V, while −79.11 % appears at +0.5 V. Vacancy analysis at zero bias reveals that Mn-site defects suppress TMR to −100.00 %, whereas V-site vacancy produce a less severe reduction, with TMR at −37.81 %. Combining spin-gapless semiconductor and half-metallic magnet electrodes with a van der Waals barrier enhances spin filtering, tunability, and multifunctional transport, making this design promising for energy-efficient spintronic memory and logic applications.