Physica B-condensed Matter最新文献

{"title":"Corrigendum to “NIR photoluminescent characteristics of Nd3+ activated fluoroborosilicate glasses for laser material applications” [Phys. B: Condens. Matter 634 (2022) 413772]","authors":"Adon Jose, T. Krishnapriya, Jeena Rose Jose, Cyriac Joseph, P.R. Biju","doi":"10.1016/j.physb.2025.417383","DOIUrl":"10.1016/j.physb.2025.417383","url":null,"abstract":"","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"713 ","pages":"Article 417383"},"PeriodicalIF":2.8,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144084311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation and performance analysis of Zn-Ni/SiC composite coatings for oil pipeline applications","authors":"Hui Zhang,&nbsp;Lan Zhang,&nbsp;Huizhong Ma","doi":"10.1016/j.physb.2025.417391","DOIUrl":"10.1016/j.physb.2025.417391","url":null,"abstract":"<div><div>To enhance the corrosion resistance and drag reduction performance of X80 pipeline steel used in oil transportation, Zn-Ni/SiC coatings were prepared via direct current electrodeposition. Unlike previous studies that focused on Zn-Ni coatings, this work systematically investigates the role of SiC content on phase evolution, microstructure, and surface functional properties. A particular novelty of this study lies in the promotion of the γ-Ni₅Zn₂₁ phase and suppression of the η-Zn phase through SiC incorporation. The coating with 4 g/L SiC exhibited the best performance, achieving a 167.6 % increase in microhardness, 49.4 % and 48.1 % reductions in wear rate and friction coefficient, a 49.9 % increase in contact angle, and a 73.3 % improvement in polarization resistance. These enhancements were attributed to grain refinement, dispersion strengthening, and improved surface uniformity. This study offers new insights into the design of multifunctional Zn-Ni-based composite coatings and provides theoretical support for protecting pipeline steels in corrosive service environments.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"713 ","pages":"Article 417391"},"PeriodicalIF":2.8,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144070748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-fold effect of compressive stress on stacking-fault tetrahedron formation in face-centered cubic metals","authors":"Xinyu Liu ,&nbsp;Hongxian Xie","doi":"10.1016/j.physb.2025.417388","DOIUrl":"10.1016/j.physb.2025.417388","url":null,"abstract":"<div><div>Molecular dynamics simulations were employed to investigate the compressive stress effect on SFTs in Cu and Ni. The results show that compressive stress exerts a dual effect on SFT formation: on one hand, it facilitates the formation of small-size SFTs in Ni; on the other hand, the compressive stress can also disrupt the stableness of pre-existing SFTs. Furthermore, the dual effect of compressive stress on SFTs is verified in terms of energy. It is revealed that compressive stress can reduce the transformation barrier from vacancy platelets to SFTs, thereby promoting the formation of SFTs. Additionally, the transformation from SFT to Frank dislocation loop induced by compressive stress is further investigated in terms of enthalpy. Finally, the structural evolution of SFTs in Cu and Ni are summarized in the compressive stress SFT size space. The present work provided a deep understanding of the behavior of SFT in stress field.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"713 ","pages":"Article 417388"},"PeriodicalIF":2.8,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144070747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tailoring thermal and mechanical properties of InTe membranes through nanoporosity: A molecular dynamics approach","authors":"Mohamed Saaoud ,&nbsp;Fatima Zahra Zanane ,&nbsp;Lalla Btissam Drissi","doi":"10.1016/j.physb.2025.417336","DOIUrl":"10.1016/j.physb.2025.417336","url":null,"abstract":"<div><div>Molecular dynamics simulations reveal how nanoporosity (0–20.1%) and temperature critically influence indium telluride (InTe) membranes for nanoelectronic applications. Mechanical properties degrade progressively with porosity: Young’s modulus declines from 43.5 GPa (pristine) by 9.7–37.9% across 2.32–20.1% porosity, while ultimate strength shows anisotropic reduction (21.4–50.0% zigzag, 32.8–61.2% armchair). Thermal conductivity drops 49.5% (40.36 to 20.4 W/m K) at 20.1% porosity due to phonon scattering, yet increases 68.4–85.4% with system length scaling (38 to 152 nm). Temperature induces fracture mode switching from zigzag to armchair propagation and exacerbates phonon-defect interactions. The observed length-dependent thermal enhancement suggests nanostructuring as an effective compensation strategy for porosity-induced losses. This work provides a computational framework for tailoring InTe membranes to specific application requirements, balancing structural integrity against thermal management needs in nanoelectronics and energy conversion devices.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"713 ","pages":"Article 417336"},"PeriodicalIF":2.8,"publicationDate":"2025-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144070093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Generalized-stacking-fault energy of sphalerite structure GaN: A first principles calculation","authors":"Shaorong Li ,&nbsp;Chuhan Cao ,&nbsp;Huaze Zhu ,&nbsp;You Xie ,&nbsp;Chengyue Wang ,&nbsp;Hao Wang ,&nbsp;Dongwei Qiao ,&nbsp;Chengfu Zhang ,&nbsp;Huan Wu ,&nbsp;Lin Zhang ,&nbsp;Shengqiang Ma","doi":"10.1016/j.physb.2025.417386","DOIUrl":"10.1016/j.physb.2025.417386","url":null,"abstract":"<div><div>As a third-generation semiconductor material, GaN has wide bandgap, strong atomic bonds, and other properties, so its research and application is currently the frontier and hot spot of global semiconductor research. In the process of preparing GaN, it is inevitably accompanied by a large number of crystal defects, and stacking fault is one of the surface defects. The energy absorbed or released during the generation of stacking fault is called the generalized-stacking-fault energy. In this work, using first-principles calculation, we systematically explored the generalized stacking fault energies and their variation with the slip distance when three different planes of sphalerite GaN slip in different directions. The results indicate that the (111) plane as a close-packed plane, its slippage is more likely to occur than the other two planes. On the (111) plane, the difficulty of slipping in the &lt;01 <span><math><mrow><mover><mn>1</mn><mo>‾</mo></mover></mrow></math></span> &gt; and &lt;<span><math><mrow><mover><mn>1</mn><mo>‾</mo></mover></mrow></math></span> 10&gt; directions is the same, and it is easier to slip than in the &lt;<span><math><mrow><mover><mn>2</mn><mo>‾</mo></mover></mrow></math></span> 11&gt; direction. On the (100) plane, it is easier to slip in the &lt;<span><math><mrow><mover><mn>1</mn><mo>‾</mo></mover></mrow></math></span> 01&gt; direction compared to the &lt;001&gt; and &lt;<span><math><mrow><mover><mn>1</mn><mo>‾</mo></mover></mrow></math></span> 00&gt; directions. On the (110) plane, the &lt;<span><math><mrow><mn>01</mn><mover><mn>1</mn><mo>‾</mo></mover></mrow></math></span> &gt; direction is the easiest to slip, and the &lt;11<span><math><mrow><mover><mn>1</mn><mo>‾</mo></mover></mrow></math></span> &gt; direction is the hardest to slip. &lt; <span><math><mrow><mover><mn>2</mn><mo>‾</mo></mover></mrow></math></span> 11&gt;(111) is easier to decompose than &lt;11 <span><math><mrow><mover><mn>1</mn><mo>‾</mo></mover></mrow></math></span> &gt;(110). The results can help to optimize the material properties and avoid formulating of stacking faults in the growth, processing, and heat treatment of GaN crystals.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"713 ","pages":"Article 417386"},"PeriodicalIF":2.8,"publicationDate":"2025-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144070734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The study of structure, electrophysical, physicomechanical and optical properties of GaAs with oxygen impurities and doped chromium","authors":"Mannab Tashmetov ,&nbsp;Abror Abdaminov ,&nbsp;Khabibulla Djangabaev ,&nbsp;Oleg Tolbanov ,&nbsp;Normamat Ismatov","doi":"10.1016/j.physb.2025.417377","DOIUrl":"10.1016/j.physb.2025.417377","url":null,"abstract":"<div><div>The X-ray diffraction study of the GaAs(O):Cr sample showed that the structure is cubic (sp.gr. F-43m). Crystallite sizes and microstrain values were determined for each Miller indices, and the corresponding values were presented. Surface morphology analysis showed that the average width (R_<em>a</em>) and height (R_z) of the surface roughness over an area of 25 μm² of the single crystal were 13.7 nm and 94.1 nm, respectively. Microhardness increased from 108.2 HV to 219.2 HV in the load range of 10–100 g. The relationship between mobility, charge carrier concentration, and temperature (100–300 K) for GaAs(O):Cr was determined, and their values were presented. Fourier transform infrared (FTIR) spectroscopy showed local modes at 578, 620, 717, 733, 758, 815, and 946 cm⁻¹, which are related to optical phonon vibrations. As a result of studying the Raman spectra of the GaAs(O):Cr sample, peaks were detected at 267, 290, 328.4, and 560.4 cm⁻¹.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"713 ","pages":"Article 417377"},"PeriodicalIF":2.8,"publicationDate":"2025-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144070091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dimer lines-dependent bandgap and mechano-electronic correlations in nanoribbons of 2D materials","authors":"Riddhi Moteria ,&nbsp;Ankur Pandya ,&nbsp;Keyur Sangani ,&nbsp;Prafulla K. Jha","doi":"10.1016/j.physb.2025.417372","DOIUrl":"10.1016/j.physb.2025.417372","url":null,"abstract":"<div><div>This study investigates the dimer lines-dependent electrical and mechanical properties of armchair nanoribbons (ANRs) derived from graphene and post-graphene 2D materials. We have developed a general equation based on the number of dimers, rooted in a Pandya-Jha formulation, that uses the tight-binding approximation in conjunction with electron-phonon interaction theory to predict and control important parameters such as bandgap, elastic modulus, surface mass density, and phonon velocity. The observed inverse relationship between dimer lines and bandgap and elastic modulus offers a significant design principle for ANRs, allowing for the precise optimization of these materials for devices requiring electronic functionality and mechanical robustness. The strong correlation between our theoretical predictions, which have been validated against established computational methods (LDA, GW, DFT), and the observed experimental findings demonstrates the practical significance of this dimer-line-based approach. This work establishes a significant framework for accelerating the advancement of ANR-based flexible sensors, NEMS devices, and energy-efficient transistors, thereby enhancing the theoretical foundations and computational facilities available for the emerging field of 2D nanomaterial-based electronics.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"713 ","pages":"Article 417372"},"PeriodicalIF":2.8,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143947856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mo-4d charge responses of pure and n-doped MoS2 monolayer semiconductor","authors":"Sabrina S. Carara,&nbsp;Luis Craco","doi":"10.1016/j.physb.2025.417317","DOIUrl":"10.1016/j.physb.2025.417317","url":null,"abstract":"<div><div>Based on density functional plus dynamical mean-field theory we unveil the role played by electron–electron interactions and electron-doping within the Mo-<span><math><mrow><mn>4</mn><mi>d</mi></mrow></math></span> spectral functions of MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> monolayer semiconductor. We show that defect-free MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> monolayer is an ideal weakly correlated testing ground to explore orbital-selective charge responses and <span><math><mi>n</mi></math></span>-doping driven <span><math><mi>d</mi></math></span>-band metallicity with analog resistive memory and bipolar switching behavior all arising from orbital selectivity. We discuss the relevance of our orbital-selective results for monolayer MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> in the context of the current–voltage (<span><math><mrow><mi>I</mi><mo>−</mo><mi>V</mi></mrow></math></span>) characteristic of MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> memristors and atomristors for future neuromorphic computing.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"713 ","pages":"Article 417317"},"PeriodicalIF":2.8,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144070733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The effects of sputtering powers on the structural, optical and electrical properties of β-Ga2O3 thin films prepared by magnetron sputtering","authors":"Feng Ji ,&nbsp;Zhichao Chen ,&nbsp;Yadan Li ,&nbsp;Yahan Wang ,&nbsp;Xuehao Ge ,&nbsp;Kai Jiang ,&nbsp;Hai Zhu ,&nbsp;Xianghu Wang","doi":"10.1016/j.physb.2025.417322","DOIUrl":"10.1016/j.physb.2025.417322","url":null,"abstract":"<div><div><span><math><mi>β</mi></math></span>-Ga<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> exhibits promising electrical properties and stability for power electronics and UV detectors, yet achieving effective p-type doping remains challenging. This study investigates Bi and Cu-doped <span><math><mi>β</mi></math></span>-Ga<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> thin films grown via magnetron sputtering on sapphire, focusing on sputtering power effects post-annealing. Structural and optical analyses (X-ray diffraction, XRD; X-ray photoelectron spectroscopy, XPS; scanning electron microscopy, SEM; energy-dispersive spectroscopy, EDS; Raman spectroscopy, photoluminescence, and transmission spectroscopy) reveal a reduced bandgap from 4.97 eV to 3.80 eV after doping, aligning with theoretical predictions that Bi<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> alloying elevates the valence band. Room-temperature photoluminescence identified two blue–green emission bands. Hall measurements confirmed weak p-type conductivity at the 1000 G field, with resistivity 1.49 × 10¹¹ <span><math><mi>Ω</mi></math></span> cm, Hall coefficient 4.22 × 10¹³ cm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>/C, mobility 334.95 cm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>V⁻¹s⁻¹, and carrier density 1.48 × 10<span><math><msup><mrow></mrow><mrow><mn>5</mn></mrow></msup></math></span> cm⁻². These results advance p-type <span><math><mi>β</mi></math></span>-Ga<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> research, demonstrating dual-acceptor doping as a viable pathway for modulating optoelectronic properties.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"713 ","pages":"Article 417322"},"PeriodicalIF":2.8,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143947855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"μSR study on the 4f-hole doping in the Kondo semiconductor Ce1-xLaxOs2Al10","authors":"Noraina Adam ,&nbsp;Saidah Sakinah Mohd Tajudin ,&nbsp;Retno Asih ,&nbsp;Dita Puspita Sari ,&nbsp;Adroja Devashibai ,&nbsp;Toshiro Takabatake ,&nbsp;Mohamed Ismail Mohamed Ibrahim ,&nbsp;Shukri Sulaiman ,&nbsp;Isao Watanabe","doi":"10.1016/j.physb.2025.417379","DOIUrl":"10.1016/j.physb.2025.417379","url":null,"abstract":"<div><div>We examined the zero-field (ZF) and transverse-field (TF) muon spin relaxation (<em>μ</em>SR) measurement on the polycrystalline sample of the AFM Kondo semiconductors (Ce_1-<em>x</em>La_<em>x</em>)Os₂Al₁₀ (<em>x</em> = 0.1, 0.2, 0.3, 0.4, 0.5) down until 2 K to confirm the long range magnetic order and observing the magnetic transition temperature, <em>T</em>₀. The TF-<em>μ</em>SR measurements suggested a decreasing magnetic contribution from Ce as the percentage of La-doped increased from 10 % to 50 %. However, the ZF-<em>μ</em>SR data showed a frequency oscillations below <em>T</em>₀ only in (Ce_1-<em>x</em>La_<em>x</em>)Os₂Al₁₀ (<em>x</em> = 0.1, 0.2, 0.3) and confirms the long-range magnetic ordering of the Ce-moment. In the case of (Ce_1-<em>x</em>La_<em>x</em>)Os₂Al₁₀ (<em>x</em> = 0.4, 0.5), the ZF-<em>μ</em>SR spectra showed no muon spin precession down to 2 K which possibly suggests that it needs a different experimental setup in order to observe it.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"713 ","pages":"Article 417379"},"PeriodicalIF":2.8,"publicationDate":"2025-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143937866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}