Physica B-condensed Matter最新文献

Fluorescence intensity ratio temperature sensing of Dy1-xTbx-datrz MOF with dual characteristic emission 双特性发射的Dy1-xTbx-datrz MOF荧光强度比温度传感

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-05-28 DOI: 10.1016/j.physb.2025.417457

Zitao Yan , Chuanfang Wu , Yong Pu , Dachuan Zhu

{"title":"Fluorescence intensity ratio temperature sensing of Dy1-xTbx-datrz MOF with dual characteristic emission","authors":"Zitao Yan , Chuanfang Wu , Yong Pu , Dachuan Zhu","doi":"10.1016/j.physb.2025.417457","DOIUrl":"10.1016/j.physb.2025.417457","url":null,"abstract":"<div><div>A series of dual-lanthanide metal-organic frameworks (Dy<sub>1-x</sub>Tb<sub>x</sub>-datrz MOFs) have been synthesized successfully via solvothermal method using DMF solution and confirmed by XRD and FT-IR patterns, which were further revealed as the structure composed of regular block crystals by SEM observation. Subsequently, the solid-state luminescence spectra of all the Dy<sub>1-x</sub>Tb<sub>x</sub>-datrz MOFs showed the dual characteristic emission peaks of Dy<sup>3+</sup> and Tb<sup>3+</sup> under the excitation at 350 nm. Meanwhile, a concentration quenching effect was found like monometallic luminescence MOF, among which Dy<sub>0.5</sub>Tb<sub>0.5</sub>-datrz exhibited the strongest emission intensity. Notably, the ratio-metric fluorescence temperature sensing performance and thermal cycle stability of Dy<sub>0.5</sub>Tb<sub>0.5</sub>-datrz were investigated, of which the sensitivity value (Sr) ranged from 0.2737 %K<sup>−1</sup> to 0.4421 %K<sup>−1</sup> and δT value varied between 0.0300K and 0.0485K during 293K–473K, combined with a good thermal cycle stability. Therefore, Dy<sub>0.5</sub>Tb<sub>0.5</sub>-datrz with dual characteristic emission has the potential for ratio-metric fluorescence temperature sensing.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"714 ","pages":"Article 417457"},"PeriodicalIF":2.8,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144168804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Manipulation of transient electroluminescence spike induced by polar Alq3 electron transport layer 极性Alq3电子传输层诱导瞬态电致发光峰的操纵

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-05-28 DOI: 10.1016/j.physb.2025.417456

Sinuo Xu , Zhaoyue Lü , Jing Xiao , Haifen Xie , Haichuan Mu

{"title":"Manipulation of transient electroluminescence spike induced by polar Alq3 electron transport layer","authors":"Sinuo Xu , Zhaoyue Lü , Jing Xiao , Haifen Xie , Haichuan Mu","doi":"10.1016/j.physb.2025.417456","DOIUrl":"10.1016/j.physb.2025.417456","url":null,"abstract":"<div><div>The electroluminescence (EL) performance of tris-(8-hydroxyquinolate) aluminum (Alq<sub>3</sub>)-based organic light-emitting diodes (OLEDs) and the associated interfacial charge behaviors are comprehensively investigated using transient EL measurements. The transient EL decay reveals that no spike is observed at the end of the positive bias, but an overshoot appears at the onset of reverse bias. The spike at the failing edge is suppressed by the large spontaneous orientation polarization (SOP) of Alq<sub>3</sub>, while the overshoot under reverse bias is attributed to the de-trapping and recombination of accumulated interfacial charges. The intensity of overshoot in transient EL decay strongly correlates with the quantity of interfacial charges, which can be manipulated through controlled deposition parameters, such as film thickness, substrate temperature, and deposition rate. To optimize device performance, a critical thickness and substrate temperature should be maintained during polar Alq<sub>3</sub> deposition. These findings highlight the critical role of SOP regulation in maximizing OLED performance.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"714 ","pages":"Article 417456"},"PeriodicalIF":2.8,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144168801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Corrigendum to ‘Spin dynamics investigation and structural analysis of ambient scalable Sr2+ doped zirconium ferrite nanoparticles synthesized by low temperature auto combustion route’ [Physica B 691 (2024) 416357] 自旋动力学研究和结构分析的环境可伸缩Sr2+掺杂锆铁氧体纳米颗粒的低温自燃烧路线的修正[物理学报B 691 (2024) 416357]

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-05-27 DOI: 10.1016/j.physb.2025.417247

Sunil Sambyal , Ajay Singh , Ravender Tickoo , Ankur Goswami , Shailender Kumar , Markandey Singh

引用次数: 0

Optical waveguides in Pr:LuAG crystals fabricated by carbon ion implantation and femtosecond laser ablation 碳离子注入飞秒激光烧蚀制备Pr:LuAG晶体中的光波导

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-05-27 DOI: 10.1016/j.physb.2025.417437

Yu-Jiao Zhang, Hui Huang, Qian-Qiu Zhao, Ying-Jie Ma, Chuan-Lei Jia

引用次数: 0

Graphene terahertz metamaterials absorber with multiple absorption peaks and adjustable incident polarization angle 具有多吸收峰和可调入射偏振角的石墨烯太赫兹超材料吸收体

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-05-26 DOI: 10.1016/j.physb.2025.417427

Lixuan Shao , Hua Yang , Zao Yi , Junqiao Wang , Chaojun Tang , Juan Deng , Boxun Li

{"title":"Graphene terahertz metamaterials absorber with multiple absorption peaks and adjustable incident polarization angle","authors":"Lixuan Shao , Hua Yang , Zao Yi , Junqiao Wang , Chaojun Tang , Juan Deng , Boxun Li","doi":"10.1016/j.physb.2025.417427","DOIUrl":"10.1016/j.physb.2025.417427","url":null,"abstract":"<div><div>In this work, we propose a novel graphene terahertz metamaterials absorber with multiple absorption peaks and incident polarization angle. The absorber achieves five distinct absorption bands within the 9–14 THz frequency range, with an average absorption rate of 96.4 %. By tuning the bias voltage, the Fermi level of graphene can be dynamically adjusted, allowing flexible control over the absorption frequencies. Moreover, the device maintains strong absorption performance for incident angles up to 60°, making it suitable for a wide range of oblique incidences. Due to the absence of 90° rotational symmetry in the structural design, the absorber exhibits notable variations in absorption efficiency at certain frequencies when the polarization angle of the incident wave is altered. This unique polarization-dependent behavior holds potential for applications in photonic and optoelectronic devices that require polarization-selective responses to electromagnetic waves. In addition, the highest sensitivity(S) and figure of merit (FOM) of the absorber reached 10670nm/RIU and 32.7/RIU, respectively, showcasing the absorber's superior sensitivity and efficient tunability. The absorber's ability to achieve multi-frequency absorption with excellent characteristics also paves the way for designing next-generation, adjustable terahertz devices, contributing valuable insights for future research and development in this field.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"714 ","pages":"Article 417427"},"PeriodicalIF":2.8,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144168800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The effect of DC-bias on the magnetization curves described with the T(x) model 用T(x)模型描述了直流偏置对磁化曲线的影响

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-05-26 DOI: 10.1016/j.physb.2025.417378

Krzysztof Chwastek , Radosław Jastrzȩbski , Anna Przybył , Piotr Gȩbara , Monika Gȩbara , Roman Gozdur , Ajay P.S. Baghel , B. Sai Ram

{"title":"The effect of DC-bias on the magnetization curves described with the T(x) model","authors":"Krzysztof Chwastek , Radosław Jastrzȩbski , Anna Przybył , Piotr Gȩbara , Monika Gȩbara , Roman Gozdur , Ajay P.S. Baghel , B. Sai Ram","doi":"10.1016/j.physb.2025.417378","DOIUrl":"10.1016/j.physb.2025.417378","url":null,"abstract":"<div><div>Asymmetric excitation patterns are commonly observed in real-life magnetic circuits, often resulting in reversal curves and DC-biased hysteresis loops. For each minor loop, the anhysteretic curve can be extracted as the middle curve from the loop branches, what leads to the concept of the anhysteretic surface. This idea, initially introduced by Sablik and Langman in the context of magnetoelastic coupling, is a logical consequence of the observed behavior. This paper explores the possibilities of <span><math><mrow><mi>T</mi><mrow><mo>(</mo><mi>x</mi><mo>)</mo></mrow></mrow></math></span> model to describe First Order Reversal Curves with simple mathematical expressions. The effectiveness of this approach is demonstrated for materials with distinct magnetic properties i.e. for a soft (non-grain-oriented electrical steel) and a hard (<span><math><mrow><msub><mrow><mrow><mo>(</mo><msub><mrow><mtext>Nd</mtext></mrow><mrow><mn>0</mn><mo>.</mo><mn>75</mn></mrow></msub><msub><mrow><mtext>Pr</mtext></mrow><mrow><mn>0</mn><mo>.</mo><mn>25</mn></mrow></msub><mo>)</mo></mrow></mrow><mrow><mn>10</mn></mrow></msub><msub><mrow><mtext>Fe</mtext></mrow><mrow><mn>82</mn></mrow></msub><msub><mrow><mtext>Zr</mtext></mrow><mrow><mn>2</mn></mrow></msub><msub><mrow><mtext>B</mtext></mrow><mrow><mn>6</mn></mrow></msub></mrow></math></span>) magnet.</div><div>Moreover the paper emphasizes the possibility to characterize the anhysteretic surface using expressions derived from the <span><math><mrow><mi>T</mi><mrow><mo>(</mo><mi>x</mi><mo>)</mo></mrow></mrow></math></span> model, what leads to a more comprehensive understanding of energy dissipation phenomena in ferromagnets.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"714 ","pages":"Article 417378"},"PeriodicalIF":2.8,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144138083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exploring the electronic and magnetic properties of two-dimensional M2X3 (M=V, Cr, Mn, Fe, Co, Ni; X=O, S, Se, Te) compounds 二维M2X3 （M=V, Cr, Mn, Fe, Co, Ni）的电子和磁性研究X=O， S, Se, Te)化合物

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-05-26 DOI: 10.1016/j.physb.2025.417396

Wenbin Chen , Shasha Liu , Lechen Han , Jiangying Yu , Jinrong Xu , Min Shi , Xinhua Li , Kai Huang , Ping Li

引用次数: 0

Remarkably enhanced acetaldehyde sensing of a novel structured Au-TiO2-SnO2 operating at room temperature 显著增强了在室温下操作的新型结构Au-TiO2-SnO2的乙醛传感

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-05-26 DOI: 10.1016/j.physb.2025.417433

Wenbo Chen , Zhongyan Gao , Jiajie Huang , Zhaohong Li , Yukang Peng , Yangguang Ran , Zhongtao Qin , Ningjing Wang , Qinping Qiang , Bitao Liu

引用次数: 0

Construction of SnS2@C3N5 photocatalysts by self-assembly: in-depth analysis of the excellent photocatalytic performance and Z-scheme heterojunction carrier transfer mechanism 自组装构建SnS2@C3N5光催化剂：深入分析优异的光催化性能和z -图式异质结载流子转移机理

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-05-26 DOI: 10.1016/j.physb.2025.417432

Huiyang Xv , Huixiang Yan , Wei Li, Yongyi Li, Shuanglong Li, Xiaorui Huang, Bo Wang, Shichao Jiao, Di Lin, Wenxu Zhang

{"title":"Construction of SnS2@C3N5 photocatalysts by self-assembly: in-depth analysis of the excellent photocatalytic performance and Z-scheme heterojunction carrier transfer mechanism","authors":"Huiyang Xv , Huixiang Yan , Wei Li, Yongyi Li, Shuanglong Li, Xiaorui Huang, Bo Wang, Shichao Jiao, Di Lin, Wenxu Zhang","doi":"10.1016/j.physb.2025.417432","DOIUrl":"10.1016/j.physb.2025.417432","url":null,"abstract":"<div><div>Amidst global energy transition priorities and environmental remediation imperatives, heterointerface-engineered photocatalysts emerge as strategic foci in advanced materials development. In this study, SnS<sub>2</sub>@C<sub>3</sub>N<sub>5</sub> composite with Z-scheme heterojunction structure were prepared using a synergistic strategy of hydrothermal synthesis and electrostatic self-assembly. Systematic characterization and performance tests show its unique energy band matching and interfacial charge transport mechanism promote photogenerated carrier separation thus potentiate the catalytic performance under luminous incidence. The material demonstrates robust photocatalytic performance. In hydrogen production tests, the value reaches 7546 μmol g<sup>−1</sup> h<sup>−1</sup>, demonstrating an 8.43-fold increase compared to pristine C<sub>3</sub>N<sub>5</sub>. For methyl orange degradation, it achieves 89.7 % removal efficiency within 120 min, being 2.2 times more effective than C<sub>3</sub>N<sub>5</sub> and 4 times higher than SnS<sub>2</sub>. Combined with transient photocurrent, fluorescence spectroscopy and theoretical calculations reveal the charge transfer pathways and reaction kinetics in Z-scheme heterojunctions. These findings provide both theoretical guidance and practical strategies for developing multifunctional photocatalytic materials.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"714 ","pages":"Article 417432"},"PeriodicalIF":2.8,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144168803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Microstructure evolution and spallation of CoCrFeNi/Al multilayers subjected to shock loading 冲击载荷作用下CoCrFeNi/Al多层材料的微观结构演化与剥落

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-05-25 DOI: 10.1016/j.physb.2025.417425

Ziyu Chen , Ziwen Zeng , Haitao Li , Shangwei Song , Henggao Xiang , Xianghe Peng

{"title":"Microstructure evolution and spallation of CoCrFeNi/Al multilayers subjected to shock loading","authors":"Ziyu Chen , Ziwen Zeng , Haitao Li , Shangwei Song , Henggao Xiang , Xianghe Peng","doi":"10.1016/j.physb.2025.417425","DOIUrl":"10.1016/j.physb.2025.417425","url":null,"abstract":"<div><div>The role of interfaces in mediating wave attenuation, dislocation activity, and spalling is critical for the application of high-entropy alloy (HEA) multilayer films. In this work, bilayer, four-layered, and six-layered CoCrFeNi/Al multilayer models with semi-coherent interfaces were constructed via molecular dynamics (MD) simulations to systematically investigate the role of interfaces under shock loading. The results reveal that multilayer configurations significantly attenuate transmitted pressures through interfacial stress dissipation, while suppressing FCC-to-BCC transitions. The spallation resistance is found to scale non-monotonically with layer count: increased interfaces reduce damage via energy dissipation, yet thinner layers exacerbate localized tensile stresses, reflecting a competition between Hall-Petch strengthening and stress concentration effects. Furthermore, comparative analysis with pure Ni/Al multilayers reveals that interface misfit dislocations induced by the incorporation of HEA serve as active nucleation sources for Shockley partial dislocations and stacking fault pyramids, dynamically regulating defect propagation and phase stability. These insights establish a microstructure-property framework for designing HEA-based multilayers with tailored shock resistance.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"714 ","pages":"Article 417425"},"PeriodicalIF":2.8,"publicationDate":"2025-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144168813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0