Physica B-condensed Matter最新文献_第10页

Computational insights into structural, elastic, optoelectronic, and thermodynamic properties of silver-based germanium ternary halide perovskites 银基锗三元卤化物钙钛矿的结构、弹性、光电和热力学性质的计算见解

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-04-17 DOI: 10.1016/j.physb.2025.417265

Izzat Khan , Amir Ullah , Nasir Rahman , Mudasser Husain , Hind Albalawi , Amani H. Alfaifi , Khamael M. Abualnaja , Wafa Mohammed Almalki , Vineet Tirth , Ahmed Azzouz-Rached , Mohammad Sohail

{"title":"Computational insights into structural, elastic, optoelectronic, and thermodynamic properties of silver-based germanium ternary halide perovskites","authors":"Izzat Khan , Amir Ullah , Nasir Rahman , Mudasser Husain , Hind Albalawi , Amani H. Alfaifi , Khamael M. Abualnaja , Wafa Mohammed Almalki , Vineet Tirth , Ahmed Azzouz-Rached , Mohammad Sohail","doi":"10.1016/j.physb.2025.417265","DOIUrl":"10.1016/j.physb.2025.417265","url":null,"abstract":"<div><div>This study explores the characteristics of AgGeX3 (X = Cl and F) using density functional theory (DFT), examining their structural, electronical, optical, elastic, thermal properties, and phonon modes. Both compounds have a perovskite-like crystal structure, with AgGeCl3 having a wider lattice constant (5.17 Å) than AgGeF3 (4.36 Å). AgGeCl3 has an indirect band gap of 0.553 eV, suitable for wide-range light absorption in optoelectronics, whereas AgGeF3 possesses a larger band gap. AgGeF3 exhibits a higher bulk modulus 53.26 GPa than AgGeCl3 28.91 GPa, implying greater resistance to deformation. Optical properties shows that AgGeCl3 have high absorption coefficient, optical conductivity, refractivity, and reflectivity which make it suitable to absorb light in visible range while AgGeF3 in UV range. By analyzing their thermal properties, AgGeF3 shows higher heat absorption (157.7 J/mol·K) and resistance to temperature changes (480 K at 20 GPa), while expanding less (6 × 10−5 K−1 at 0 GPa) and shrinking less under pressure. This makes it more stable under heat. In contrast, AgGeCl3 expands more (24 × 10−5 K−1 at 0 GPa) and resists temperature changes less (450 K at 20 GPa). These differences suggest AgGeF3 is better for applications with high pressure and sensitive temperature requirements, while AgGeCl3 is better for tasks like converting heat to electricity, creating electricity from light, and making electronics that can bend.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"711 ","pages":"Article 417265"},"PeriodicalIF":2.8,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143868423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synthesis of nanocurcumin conjugated titanium dioxide bio-nanocomposites for enhanced optical, electrical, and antibacterial applications 合成纳米姜黄素共轭二氧化钛生物纳米复合材料，用于增强光学、电学和抗菌应用

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-04-17 DOI: 10.1016/j.physb.2025.417269

P. Anju , Hiba Muhammed , K. Arun , B.K. Bahuleyan , M.T. Ramesan

{"title":"Synthesis of nanocurcumin conjugated titanium dioxide bio-nanocomposites for enhanced optical, electrical, and antibacterial applications","authors":"P. Anju , Hiba Muhammed , K. Arun , B.K. Bahuleyan , M.T. Ramesan","doi":"10.1016/j.physb.2025.417269","DOIUrl":"10.1016/j.physb.2025.417269","url":null,"abstract":"<div><div>This study explores the synthesis of nanocurcumin (NCur) and its impact on the structural, electrical, and antibacterial properties of titanium dioxide (TiO2) through a simple solvent-free mechanical mixing. FTIR confirmed NC-TiO2 interactions, while UV–Vis spectroscopy showed a red shift and a reduced bandgap from 3.571 eV to 2.550 eV. XRD verified the crystalline retention of TiO2. Morphological analysis using optical microscopy and FE-SEM showed uniform NCur dispersion in TiO2 up to 6 wt%, beyond which agglomeration occurred. Electrical impedance studies demonstrated a 1.127-fold increase in conductivity at 100 Hz and a reduction in activation energy from 5.37 × 10−5eV to 5.00 × 10−5 at 6 wt% NCur. Additionally, the dielectric constant increased by 29 %, enhancing the material's energy storage potential. Antibacterial assays indicated that TiO2/NCur bio-nanocomposites exhibited significant antibacterial activity against E. coli, increasing efficacy by 183.33 %. These multifunctional properties make TiO2/NCur composites highly promising for applications in biosafe electronics, energy storage, and antibacterial technologies.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"711 ","pages":"Article 417269"},"PeriodicalIF":2.8,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143855932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Luminescence and radiative features of Gd2O3 modified and Pr3+ doped borate glass via energy transfer from Gd to Pr for blue- and UV-excited WLEDs Gd2O3修饰和Pr3+掺杂硼酸盐玻璃通过Gd到Pr的能量转移对蓝色和紫外光激发wled的发光和辐射特性

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-04-17 DOI: 10.1016/j.physb.2025.417270

I. Ullah , C.S. Sarumaha , A. Angnanon , I. Khan , M. Shoaib , S.A. Khattak , S. Kothan , G. Rooh , J. Kaewkhao

{"title":"Luminescence and radiative features of Gd2O3 modified and Pr3+ doped borate glass via energy transfer from Gd to Pr for blue- and UV-excited WLEDs","authors":"I. Ullah , C.S. Sarumaha , A. Angnanon , I. Khan , M. Shoaib , S.A. Khattak , S. Kothan , G. Rooh , J. Kaewkhao","doi":"10.1016/j.physb.2025.417270","DOIUrl":"10.1016/j.physb.2025.417270","url":null,"abstract":"<div><div>We investigate the XRD, FTIR, structure variation factors, optical absorption, luminescence and radiative behaviors of mixed Gd2O3 in a 20Li2O3-30SrO-(49-x)B2O3-xGd2O3-1Pr2O3 glass. The Judde-Ofelt (J-O) analysis of the absorption spectra is performed to deduce intensity parameters. The refractive index and Ωλ = 2, 4, 6 values are employed to evaluate the branching ratios (βR), and radiative transition probabilities (AR) of Pr3+ luminescent states. At a wavelength of 444 nm for optical pumping, critical factors such as significant optical gain, and gain bandwidth in the 3Po → 3H4 transition for designing visible laser systems are estimated. The Gd3+ ions sensitize the Pr3+ ions through ET from their 6P7/2 state to the 3PJ = 2, 1, 0 states of Pr3+ ions. The extracted Commission Internationale de l'Éclairage (CIE), correlated color temperature (CCT) and color purity (CP) values from the luminescence spectra demonstrate the emission of white light. These results have implications for WLEDs and optical amplification.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"711 ","pages":"Article 417270"},"PeriodicalIF":2.8,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143867671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Doping effect on structural, mechanical stability, tunning bandgap, optical and thermodynamical responses of indium doped aluminium arsenide for optoelectronic applications: by first-principles 掺杂对光电应用中掺杂铟砷化铝的结构、机械稳定性、调谐带隙、光学和热力学响应的影响：第一性原理

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-04-16 DOI: 10.1016/j.physb.2025.417211

Anwar Ali , Abdul Waheed Anwar , Muhammad Moin , Mehrunisa Moin , Shafqat Nabi , Rana Bilal Ahmed , Sagheer Ahmad , Abid Ali , Sumiya Shaheen

{"title":"Doping effect on structural, mechanical stability, tunning bandgap, optical and thermodynamical responses of indium doped aluminium arsenide for optoelectronic applications: by first-principles","authors":"Anwar Ali , Abdul Waheed Anwar , Muhammad Moin , Mehrunisa Moin , Shafqat Nabi , Rana Bilal Ahmed , Sagheer Ahmad , Abid Ali , Sumiya Shaheen","doi":"10.1016/j.physb.2025.417211","DOIUrl":"10.1016/j.physb.2025.417211","url":null,"abstract":"<div><div>In this computational research work, the demanding Indium doped Aluminium Arsenide has keenly been computed and explored for its faithful responses from the unique historical class of semiconductors. In DFT, GGA with PBE are employed via CASTEP Code. Density functional theory in the frame of full potential linear augmented plane wave (FP-LAPW) is used. Structural parameters are determined by the appropriate fit of volume verses total energy. Lattice parameters, bandgaps, elastic constants, dielectric function, refractive indices, and thermal properties are computed and investigated. A drastic reduction in band gap (1.58eV–0.12eV) is the foremost interest of Indium incorporation (x = 0, 0.25, 0.50, 0.75) into the pristine AlAs. The improved bulk modulus B, sheer modulus G, Young modulus E along with compressibility ratio B/G are carried out. A deeper understanding reveals the gradual contribution of enhanced optical throughput of the Al1-xInxAs. Real and imaginary parts of the dielectric function have logically been explored by the gradual change of lattice parameters and band gap. Thermal computation for phonon dispersion relation, heat capacity, enthalpy and entropy were found dedicated which provides pathway for the experimentalists to exercise this material confidently for the electronic and optical outcomes with less consumption of energy which is demanding due to the energy crises and inflation. Our contributions in computing and understating Al1-xInxAs enables its authenticity in ranges of technological innovations, including high frequency transistors, lasers, diodes, and photovoltaics.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"712 ","pages":"Article 417211"},"PeriodicalIF":2.8,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143906710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

XPS visualization of soft and hard Lewis base passivation of defects in MAPbI3 perovskite MAPbI3 包晶中缺陷的软路易斯基和硬路易斯基钝化的 XPS 视觉效果

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-04-15 DOI: 10.1016/j.physb.2025.417268

Ivan S. Zhidkov , Maxim F. Gerasimov , Victoria V. Ozerova , Lyubov A. Frolova , Marina I. Ustinova , Azat F. Akbulatov , Andrey I. Kukharenko , Pavel A. Troshin , Ernst Z. Kurmaev

{"title":"XPS visualization of soft and hard Lewis base passivation of defects in MAPbI3 perovskite","authors":"Ivan S. Zhidkov , Maxim F. Gerasimov , Victoria V. Ozerova , Lyubov A. Frolova , Marina I. Ustinova , Azat F. Akbulatov , Andrey I. Kukharenko , Pavel A. Troshin , Ernst Z. Kurmaev","doi":"10.1016/j.physb.2025.417268","DOIUrl":"10.1016/j.physb.2025.417268","url":null,"abstract":"<div><div>A new method for visualization of uncoordinated lead (Pb2+) in solution processed polycrystalline halide perovskite films is presented. The method is based on the measurements of XPS spectra with high energy resolution, which show a narrowing of the low-energy part of the Pb 4f-core level spectra due to passivation of halide vacancies with soft and hard Lewis base doping and reduction of contribution of uncoordinated lead (Pb2+) at binding energy of ∼137.8 eV. Based on XPS Pb 4f-spectra measurements the influence of size of hard Lewis base metal iodides on the passivation of surface defects in MAPbI3 perovskite is discussed. It is found that at low concentrations (1–5 %) CaI2, BaI2, AgI with metal ionic radius ≥1.0 Å the metal atoms substitute the coordinated Pb2+ atoms whereas at higher concentrations they are located at grain boundaries and passivate the uncoordinated lead sites. For hard Lewis base metal iodides with small ionic radii (0.7–0.8 Å) (MnI2, FeI2, CuI) the situation is quite different and metals occupy the interstitial positions keeping the uncoordinated Pb2+ ions to be unchanged. The use of appropriate charge-transport layers and soft Lewis base molecular modifiers can improve the crystallization of perovskite films by reducing the number of defects formed, which is also reflected in the XPS Pb 4f7/2 spectra.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"711 ","pages":"Article 417268"},"PeriodicalIF":2.8,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143855931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Unstable states of non-volatile reconfigurable photonic device based on phase change material 基于相变材料的非易失性可重构光子器件的不稳定状态

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-04-15 DOI: 10.1016/j.physb.2025.417274

Jie Liao , Lidan Lu , Guang Chen , Yingjie Xu , Li Yang , Lianqing Zhu

引用次数: 0

Frequency-dependent interface states and diode parameters of Au/n-Si Schottky diode with BOD-Z-EN interfacial layer in dark and under illumination 具有BOD-Z-EN界面层的Au/n-Si肖特基二极管在黑暗和光照下的频率依赖界面态和二极管参数

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-04-15 DOI: 10.1016/j.physb.2025.417273

Ali Osman Tezcan , Asrın Baran Çavdar , Serkan Eymur , Nihat Tuğluoğlu

{"title":"Frequency-dependent interface states and diode parameters of Au/n-Si Schottky diode with BOD-Z-EN interfacial layer in dark and under illumination","authors":"Ali Osman Tezcan , Asrın Baran Çavdar , Serkan Eymur , Nihat Tuğluoğlu","doi":"10.1016/j.physb.2025.417273","DOIUrl":"10.1016/j.physb.2025.417273","url":null,"abstract":"<div><div>The Au/BOD-Z-EN/n-Si Schottky barrier diode was studied using capacitance/conductance-voltage (C/G-V) and capacitance/conductance-frequency (C/G-f) characteristics under different illumination intensities and in the dark. The increment in C and G at the low-frequency regions, at which the surface states at the semiconductor-organic interface can easily follow the applied ac signal, could be attributed to the surface states. Under illumination, the appearance of peaks in conductance versus logarithm of frequency (<math><mrow><msub><mi>G</mi><mi>p</mi></msub><mo>/</mo><mi>ω</mi></mrow></math>- log <math><mrow><mi>f</mi></mrow></math>) graphs confirmed such interface trap states. It was found that the interface trap density (<math><mrow><msub><mi>D</mi><mrow><mi>i</mi><mi>t</mi></mrow></msub></mrow></math>) decreases from 5.81 × 1012 eV−1cm−2 to 2.87 × 1012 eV−1cm−2 while relaxation time (τ) decreases from 15.76 μs to 3.94 μs with increasing light intensity. The results showed that the barrier height (<math><mrow><msub><mi>Φ</mi><mi>B</mi></msub></mrow></math>) dropped, going from 0.667 eV (in the dark) to 0.582 eV (100 mW/cm2). The donor concentration (<math><mrow><msub><mi>N</mi><mi>D</mi></msub></mrow></math>) rose as the illumination intensity increased, going from 5.46 × 1015 cm−3 (in the dark) to 8.08 × 1015 cm−3 (100 mW/cm2).</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"710 ","pages":"Article 417273"},"PeriodicalIF":2.8,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143858729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exploration of the impact of indium-doping on the microstructural, dispersion, linear, and nonlinear optical properties of the ZnS thin films 探讨铟掺杂对ZnS薄膜微结构、色散、线性和非线性光学性质的影响

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-04-15 DOI: 10.1016/j.physb.2025.417271

Abdullah Alsulami

{"title":"Exploration of the impact of indium-doping on the microstructural, dispersion, linear, and nonlinear optical properties of the ZnS thin films","authors":"Abdullah Alsulami","doi":"10.1016/j.physb.2025.417271","DOIUrl":"10.1016/j.physb.2025.417271","url":null,"abstract":"<div><div>Good quality pure and indium-doped ZnS layers (containing 4, 9, and 12 wt% In) were produced using an economical nebulizer spray pyrolysis technique. The XRD observations indicate a cubic structure for the examined indium-doped ZnS layers. The crystallite size decreased from 54.58 to 23.68 nm with the augmentation of indium content from 4 to 12 wt%. The optical band gap of the studied layers decreased from 3.53 to 2.94 eV as the indium was introduced into ZnS, although the Urbach energy values enhanced from 0.78 to 0.86 eV with the rise in indium doping from 4 to 12 wt%. Furthermore, the refractive index of the examined layers increased from 2.63 to 3.81 with the augmentation of indium content from 4 to 12 wt%. Investigating nonlinear optical properties involves augmenting the nonlinear refractive index of indium-doped ZnS layers by increasing the indium concentration from 4 to 12 wt%. The study of the optoelectrical parameters reveals enhancements in optical conductivity, optical carrier concentration, electrical conductivity, optical dielectric constants, and relaxation time through an increased indium ratio. The indium-doped ZnS exhibited n-type conductivity.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"710 ","pages":"Article 417271"},"PeriodicalIF":2.8,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143844619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Atomic-scale investigation of the mechanical characteristics and deformation behaviors of graphene-reinforced amorphous alloy 石墨烯增强非晶合金力学特性和变形行为的原子尺度研究

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-04-14 DOI: 10.1016/j.physb.2025.417264

Dinh-Quan Doan , Anh-Tung Luu , Quang-Hai Tran , Huu-Nghia Nguyen , Thi-Bao-Tien Tran , Xuan-Tien Tran

{"title":"Atomic-scale investigation of the mechanical characteristics and deformation behaviors of graphene-reinforced amorphous alloy","authors":"Dinh-Quan Doan , Anh-Tung Luu , Quang-Hai Tran , Huu-Nghia Nguyen , Thi-Bao-Tien Tran , Xuan-Tien Tran","doi":"10.1016/j.physb.2025.417264","DOIUrl":"10.1016/j.physb.2025.417264","url":null,"abstract":"<div><div>Molecular dynamics simulations are used to investigate the effects of graphene incorporation, graphene orientation, and temperature on the mechanical properties of amorphous CuTa/Graphene nanolaminates (AGNLs) during tensile process. The results show that the inclusion of graphene in the CuTa matrix significantly enhances the mechanical properties of AGNLs compared to the monolithic CuTa. The amorphous-graphene interface plays a crucial role in initiating shear transformation zones within the amorphous matrix. Graphene influences atomic displacement, promotes sliding at interfaces, and alters the plastic deformation behavior. The study finds that reducing the interlayer thickness of AGNLs increases the mechanical properties due to higher graphene density. The mechanical properties of AGNLs also indicate that the tensile strength in the zigzag direction is higher than in the armchair direction. Temperature has a significant impact, with higher temperatures causing a decline in tensile strength and Young's modulus due to thermal softening and increased atomic vibrations.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"710 ","pages":"Article 417264"},"PeriodicalIF":2.8,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143847985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dual oxygen reservoir model for nonpolar resistive switching in nickel tetradecavanadate based molecular switch 基于十四氰酸镍的分子开关非极性电阻开关的双氧层模型

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-04-14 DOI: 10.1016/j.physb.2025.417266

Nivedya Thathron , Bhimaraya R. Biradar , Sushil Kumar Pandey , Sib Sankar Mal , Partha Pratim Das

{"title":"Dual oxygen reservoir model for nonpolar resistive switching in nickel tetradecavanadate based molecular switch","authors":"Nivedya Thathron , Bhimaraya R. Biradar , Sushil Kumar Pandey , Sib Sankar Mal , Partha Pratim Das","doi":"10.1016/j.physb.2025.417266","DOIUrl":"10.1016/j.physb.2025.417266","url":null,"abstract":"<div><div>The data explosion and computing limitations of traditional computer systems have led researchers to find alternate data storage devices. Resistive random access memory devices have been accepted as a promising candidate to meet the growing demand for multi-bit memory storage and unconventional computing applications. In this report, we provide a comprehensive mechanistic insight into the multistate nonpolar resistive switching in nickel-embedded polyoxovanadate molecules, K2H5[NiV14O40] based memory device having the architecture Al/K2H5[NiV14O40]/ITO. Such molecular cluster belongs to a larger group of polyoxometalate family. The formation and rupture of multiple conductive filaments made up of oxygen vacancies and their lateral widening with different compliance currents allow the device to exhibit multiple resistance states. The resistance states are likely to be modulated by the multiple redox reactions of Ni and V centers of the active switching layer. The coexistence of two unipolar and two bipolar modes of resistive switching suggests that the device can be modeled as having a dual oxygen reservoir structure where both thermochemical and electrochemical mechanisms of filament theory for resistive switching coexist in the same memory cell. The observation of quantized steps in the conductance plot confirms the conductive filament based resistive switching. The enhancement and reduction in conductance with the increase in the number of pulses can mimic the potentiation and depression in biological synapses. This promises that the polyoxometalate based resistive switching devices can connect memory with neuromorphic applications.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"710 ","pages":"Article 417266"},"PeriodicalIF":2.8,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143844623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0