Mingkai Li , A.Y. Polyakov , Qiang Li , A.A. Vasilev , A.A. Romanov , N.R. Matros , L.A. Alexanyan , Qi Zhang , Degang Lai , Baoxia Zhang , Yinmei Lu , Shiheng Liang , Chuansheng Liu , Yunbin He
{"title":"Deep traps and persistent photocapacitance in p-SnO2/i-ZrxSn1-xO2/n-SnO2 p-i-n diodes","authors":"Mingkai Li , A.Y. Polyakov , Qiang Li , A.A. Vasilev , A.A. Romanov , N.R. Matros , L.A. Alexanyan , Qi Zhang , Degang Lai , Baoxia Zhang , Yinmei Lu , Shiheng Liang , Chuansheng Liu , Yunbin He","doi":"10.1016/j.physb.2024.416796","DOIUrl":"10.1016/j.physb.2024.416796","url":null,"abstract":"<div><div>Current-voltage characteristics in the dark and under illumination, capacitance-voltage characteristics and admittance spectra in the dark and under illumination were measured for two sets of p-SnO<sub>2</sub>:Mg/i-Zr<sub>x</sub>Sn<sub>1-x</sub>O<sub>2</sub>/n-SnO<sub>2</sub>/n<sup>+</sup>-SnO<sub>2</sub>:Nb structures. These data strongly point to the structures demonstrating clear-cut persistent photocapacitance behavior existing for temperatures above room temperature. The phenomenon is shown to be due to the centers in the i-Zr<sub><em>x</em></sub>Sn<sub>1-<em>x</em></sub>O<sub>2</sub> layer. These centers are believed to be related to residual Nb donors coming from Nb doped SnO<sub>2</sub> layers. The analogy is drawn between the above-mentioned effect and the persistent photocapacitance phenomena in n-type doped AlGaN films for varying Al compositions that have been convincingly explained in the literature as in fact due to some of the standard n-type dopants being DX-like centers with a high barrier for capture of electrons. For the two studied p-SnO<sub>2</sub>/i-Zr<sub>x</sub>Sn<sub>1-x</sub>O<sub>2</sub>/n<sup>−</sup>-SnO<sub>2</sub>/n<sup>+</sup>-SnO<sub>2</sub>:Nb samples the thermal ionization energy, the barrier for capture of electrons, the optical ionization energy of the centers responsible for persistent photocapacitance have been estimated. The results suggest that the photoresponsivity of the samples increases when increasing the Zr mole fraction closer to the value of <em>x</em> = 0.3 and the concentration of centers responsible for persistent behavior decreasing from some 10<sup>17</sup> cm<sup>−3</sup> to some 10<sup>16</sup> cm<sup>−3</sup>.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"699 ","pages":"Article 416796"},"PeriodicalIF":2.8,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143095225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Saber , Hussein Sabbah , Mudassar Shahid , Z. Fadil , A. Samih , R. El Fdil , Seong Cheol Kim , Chaitany Jayprakash Raorane , E. Salmani , A. Mhirech , B. Kabouchi , Mohhammad Ramzan
{"title":"Investigation of magnetic characteristics and hysteresis behavior in a tetraphenylene-like monolayer: A Monte Carlo study","authors":"N. Saber , Hussein Sabbah , Mudassar Shahid , Z. Fadil , A. Samih , R. El Fdil , Seong Cheol Kim , Chaitany Jayprakash Raorane , E. Salmani , A. Mhirech , B. Kabouchi , Mohhammad Ramzan","doi":"10.1016/j.physb.2024.416800","DOIUrl":"10.1016/j.physb.2024.416800","url":null,"abstract":"<div><div>The investigation of the magnetic characteristics and hysteresis behavior in Tetraphenylene-like nanostructures revealed that ground-state phase diagrams reveal varying stable spin configurations depending on the temperature (<em>T</em>), exchange coupling parameters (<em>J</em><sub><em>aa</em></sub> and <em>J</em><sub><em>ab</em></sub>), external magnetic (<em>H</em>) and crystal (<em>D</em>) fields. Monte Carlo simulations showed the thermal magnetic behavior, particularly the blocking temperature (<em>T</em><sub><em>B</em></sub><em>) and compensation temperature (T</em><sub><em>comp</em></sub>), under the impact of these parameters. Hysteresis loops were inspected depending on the parameters <em>T, J</em><sub><em>aa</em></sub>, <em>J</em><sub><em>ab</em></sub> and <em>D</em>. The results suggest potential applications in data storage and memory devices, spintronics, and magnetic sensors.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"699 ","pages":"Article 416800"},"PeriodicalIF":2.8,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143095084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tianru Qin , Shanshan Wang , Donghui Yue , Yuqi Sun , Weiwei Chen , Fangbiao Wang , Xin Fan , Wenshu Shen , Yonghao Han , Youjin Zheng
{"title":"Pressure-directed enhanced ionic conductivity in MgMoO4 mixed-phases","authors":"Tianru Qin , Shanshan Wang , Donghui Yue , Yuqi Sun , Weiwei Chen , Fangbiao Wang , Xin Fan , Wenshu Shen , Yonghao Han , Youjin Zheng","doi":"10.1016/j.physb.2024.416799","DOIUrl":"10.1016/j.physb.2024.416799","url":null,"abstract":"<div><div>The mixed conductors have attracted much attention for potential applications in fuel cells, sensors, supercapacitors. Here, the electrical transport behavior of MgMoO<sub>4</sub> were systematically investigated at pressures up to 30.0 GPa using impedance spectroscopy measurements and theoretical calculations. The discontinuous changes in electrical parameters reflect the pressure-induced phase transition from <em>β</em>-MgMoO<sub>4</sub> to <em>γ</em>-MgMoO<sub>4</sub>. The transport mechanism was determined to be mixed ionic-electronic conduction, and the contributions of carriers were distinguished. In the pressure range where the low- and high-pressure phase coexist, ionic transport plays a dominant role. The optimal solution for ionic conductivity of MgMoO<sub>4</sub> occurs in the mixed phases, and the ionic conductivity has been increased by two orders of magnitude in comparison to that observed at ambient conditions. The resistances were analyzed with band gap, transference number and the relative ionic diffusion coefficient. The pressure constrains the atomic amplitude and limits ion-phonon scattering, resulting in a significant enhancement of the ionic diffusion coefficient and facilitates the ionic conduction of <em>γ</em>-MgMoO<sub>4</sub>. Meanwhile, it is found that the grain boundary response was weakened under compression, and the static dielectric constant was improved by pressure. These results offer valuable insights for optimizing and applying ABO<sub>4</sub>-based mixed conductors.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"699 ","pages":"Article 416799"},"PeriodicalIF":2.8,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143095222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shakti S. Ray , Trupti R. Das , Abhinav Kumar , Prince Makarios Paul S , Ravi Trivedi
{"title":"Impact of transition metal decoration on the electronic and optical properties of polycyclic aromatic hydrocarbon “naphthalene”- A DFT investigation","authors":"Shakti S. Ray , Trupti R. Das , Abhinav Kumar , Prince Makarios Paul S , Ravi Trivedi","doi":"10.1016/j.physb.2024.416782","DOIUrl":"10.1016/j.physb.2024.416782","url":null,"abstract":"<div><div>The transition metal doping on polycyclic aromatic hydrocarbons (PAHs) like naphthalene (C<sub>10</sub>H<sub>8</sub>) significantly changes its electronic as well as optical properties reflecting their potential applications in the field of optoelectronic devices such as light emitting diode, solar cell etc. In this study, we investigated the structural, electronic, and optical properties of pure C<sub>10</sub>H<sub>8</sub> and TM (Cr, Mn, Fe, Co, Ni, and Cu) C<sub>10</sub>H<sub>8</sub> by employing the B3LYP functional using density functional theory (DFT). Our calculation revealing binding energies in between 0.76 and 3.84 eV across the TM series, showing TM interaction with aromatic π-electron cloud. Charge transfer between TM and naphthalene compound is confirmed by Mulliken charge analysis indicating TMs acting as charge donors. Decoration of TM reducing the HOMO-LUMO gap from 4.74 eV for pure C<sub>10</sub>H<sub>8</sub> to 2.90 eV, 2.87 eV, 3.17 eV, 2.88 eV, and 3.52eV for Cr, Mn, Fe, Co, Ni, and Cu respectively. Metal dependent electronic interaction leading to splitting of electronic states has been analyzed using density of states. Vibrational properties also calculated by analyzing IR showing extra peaks due to altered electron density while Raman spectra shoed a red shift. These findings underscore the potential of TM-decorated C<sub>10</sub>H<sub>8</sub> in tunable optoelectronic applications.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"699 ","pages":"Article 416782"},"PeriodicalIF":2.8,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143094919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Structural parameters of CVD synthesized Ga2O3 nanostructures from X-ray diffraction analysis derived by Scherrer, Williamson-Hall, Size-Strain Plot and Halder-Wagner methods–A comparative study","authors":"Jieh Sim Lim, Fong Kwong Yam","doi":"10.1016/j.physb.2024.416798","DOIUrl":"10.1016/j.physb.2024.416798","url":null,"abstract":"<div><div>Gallium oxide (<span><math><mrow><msub><mtext>Ga</mtext><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></math></span>) nanostructures (NSs) have been synthesized by hydrogen-reducing chemical vapor deposition method at various substrate angles. X-ray diffraction (XRD) study confirms the polycrystalline nature of the <span><math><mrow><msub><mtext>Ga</mtext><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></math></span> NSs with monoclinic structure. Here, a series of X-ray peak profile analysis models such as Scherrer method, Monshi-Scherrer (M − S) plot, Williamson-Hall (W-H) plot, Size-Strain plot (S-S-P) and Halder-Wagner (H-W) technique have been utilized to estimate the crystallite size and lattice strain. All the models are evaluated with their merits and demerits in detail, and the structural parameters determined from different models are compared. Among the X-ray peak profile analysis methods, S-S-P method is the most suitable since the data points more accurately fit in this method with the highest average goodness of fit, <span><math><mrow><msup><mi>R</mi><mn>2</mn></msup></mrow></math></span> value. It has also been suggested that the anisotropic strain could have increased and shifted to lower angles crystallographic reflections as the substrate angle was <span><math><mrow><mo>≥</mo></mrow></math></span> 67.5 <span><math><mrow><mo>°</mo></mrow></math></span>.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"699 ","pages":"Article 416798"},"PeriodicalIF":2.8,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143094512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Rami Abd-Elbaki , Samy H. Aly , Sherif Yehia , Fatema Z. Mohammad
{"title":"First-principles, magnetothermal and magnetocaloric calculations on Gd1-xCexMn2Ge2 (x=0.5,0.67)","authors":"Rami Abd-Elbaki , Samy H. Aly , Sherif Yehia , Fatema Z. Mohammad","doi":"10.1016/j.physb.2024.416772","DOIUrl":"10.1016/j.physb.2024.416772","url":null,"abstract":"<div><div>In this research, we study the two compounds, Gd<sub>0.5</sub>Ce<sub>0.5</sub>Mn<sub>2</sub>Ge<sub>2</sub> and Gd<sub>0.33</sub>Ce<sub>0.67</sub>Mn<sub>2</sub>Ge<sub>2</sub>, employing the molecular field theory and the first-principles calculations. The electronic and elastic characteristics are determined through the use of Density Functional Theory (DFT) calculations. Super-cell DFT computations are utilized to calculate the overall density of states (DOS), elastic stiffness constants <span><math><msub><mrow><mi>C</mi></mrow><mrow><mi>i</mi><mi>j</mi></mrow></msub></math></span>, and various elastic properties e.g. bulk and shear moduli. The primary objective is to investigate important physical properties such as magnetization, magnetic heat capacity, and key aspects of the magnetocaloric effect including both isothermal magnetic entropy change <span><math><mrow><mi>Δ</mi><msub><mrow><mi>S</mi></mrow><mrow><mi>m</mi></mrow></msub></mrow></math></span> and adiabatic temperature change <span><math><mrow><mi>Δ</mi><msub><mrow><mi>T</mi></mrow><mrow><mi>a</mi><mi>d</mi><mo>.</mo></mrow></msub></mrow></math></span>, relative cooling power (RCP), and magnetic phase transition. We investigate these characteristics in magnetic fields up to 6 T and at temperatures up to 400 K. The two compounds show a Curie temperature <span><math><msub><mrow><mi>T</mi></mrow><mrow><mi>C</mi></mrow></msub></math></span> around 340 K. We also studied the effect of high magnetic fields on the nature of the phase transition.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"699 ","pages":"Article 416772"},"PeriodicalIF":2.8,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143094922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jiaqi Yu , Mingqing Li , Shuwen Zhao , Zhongjun Xue , Dongzhou Ding , He Feng
{"title":"Effect on In3+ co-doping on photoluminescence and scintillation properties of LYSO:Ce crystal","authors":"Jiaqi Yu , Mingqing Li , Shuwen Zhao , Zhongjun Xue , Dongzhou Ding , He Feng","doi":"10.1016/j.physb.2024.416795","DOIUrl":"10.1016/j.physb.2024.416795","url":null,"abstract":"<div><div>In this work, a series of LYSO:0.03 at.% Ce,<em>x</em>at.%In (<em>x</em> = 0, 0.001, 0.005 and 0.01) crystals were successfully grown for the first time by the optical floating zone (FZ) method. The effect of In<sup>3+</sup> co-doping on photoluminescence and scintillation properties of LYSO:Ce scintillation single crystal was investigated. It was found that at <em>x</em> = 0.001, the overall scintillation performance was optimized. This was attributed to the fact that In<sup>3+</sup> co-doping reduces the concentration of Ce2 emission center and accelerates the photoluminescence decay time of Ce<sup>3+</sup>. The temperature dependence of photoluminescence of LYSO:Ce,<em>x</em>at.%In samples was also investigated. Combined with density functional theory calculation, the phenomenon of In<sup>3+</sup> co-doping leading to a decrease in quenching temperature of decay time was explained in terms of both crossover relaxation and introduction of impurity energy levels.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"699 ","pages":"Article 416795"},"PeriodicalIF":2.8,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143095315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pannan I. Kyesmen , Nteseng D.M. Mosalakgotla , Adedapo O. Adeola , Peverga R. Jubu , Philip Omolaye , I. Ahemen , Mmantsae Diale
{"title":"Microstructural, optical, and impedance studies of porous Mn-α-Fe2O3/CuO/Ag heterostructures grown using solution-based methods","authors":"Pannan I. Kyesmen , Nteseng D.M. Mosalakgotla , Adedapo O. Adeola , Peverga R. Jubu , Philip Omolaye , I. Ahemen , Mmantsae Diale","doi":"10.1016/j.physb.2024.416784","DOIUrl":"10.1016/j.physb.2024.416784","url":null,"abstract":"<div><div>Here, thin films of porous Mn-α-Fe<sub>2</sub>O<sub>3</sub>/CuO/Ag were prepared; engaging solely low-cost solution-based methods. The dip-coating of CuO on electrodeposited Mn-α-Fe<sub>2</sub>O<sub>3</sub> samples using a 180-day-old Cu-based precursor produced films with inhomogeneous morphology and shallow surface pores. This morphology provided the platform for the drop-casting of Ag nanoparticles on the film's surface to form porous Mn-α-Fe<sub>2</sub>O<sub>3</sub>/CuO/Ag heterostructures. EDS, XRD, and Raman spectroscopy studies affirmed the film's structural integrity. The bandgap estimated for the Mn-α-Fe<sub>2</sub>O<sub>3</sub>/CuO/Ag samples was 3.8 % less than the values deduced for Mn-α-Fe<sub>2</sub>O<sub>3</sub> films. Mott-Schottky analysis disclosed n-type semiconducting behaviour for the Mn-α-Fe<sub>2</sub>O<sub>3</sub> films, which was retained after forming heterostructures with CuO and CuO/Ag. The charge transfer resistance at Mn-α-Fe<sub>2</sub>O<sub>3</sub>/CuO/Ag film's surface in an electrochemical system was 27 times lower than the approximate values obtained for Mn-α-Fe<sub>2</sub>O<sub>3</sub> samples. This research introduces a facile and low-cost approach for fabricating porous Mn-α-Fe<sub>2</sub>O<sub>3</sub>/CuO/Ag heterostructures with improved properties for photo-base and optoelectronic applications.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"699 ","pages":"Article 416784"},"PeriodicalIF":2.8,"publicationDate":"2024-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142758951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Investigation on bare o-Al2N2 nanosheet as anode materials for Ca-ion batteries: A computational study","authors":"Sami Muhsen , Karrar Hazim Salem , Jayanti Makasana , Dukhbhanjan Singh , Suhas Ballal , Mamata Chahar , Suman Saini , Pushpa Negi Bhakuni , Yasser Elmasry","doi":"10.1016/j.physb.2024.416790","DOIUrl":"10.1016/j.physb.2024.416790","url":null,"abstract":"<div><div>Discovering suitable anode materials that have exceptional electrochemical properties for Ca-ion batteries (CIBs) is seen as a major challenge for both the academic and industry research sectors. In this study, we aim to investigate the effectiveness of a recently developed 2-dimensional material called orthorhombic dialuminium dinitride (o-Al<sub>2</sub>N<sub>2</sub>) as a potential negative electrode for CIB using first-principles computations. The data obtained demonstrate that o-Al<sub>2</sub>N<sub>2</sub> possesses a low kinetic diffusion barrier of 0.19 eV, a significant specific capacity of 649 mAhg<sup>−1</sup>, and operates at a voltage of about 0.231 V. The outcomes demonstrate that orthorhombic Al<sub>2</sub>N<sub>2</sub> monolayer is a highly suitable anode material for CIBs due to its remarkable theoretical capacity, rapid Ca diffusion, strong binding energy with lithium adsorbent, and excellent structural stability. Exceptional characteristics of the 2D o-Al<sub>2</sub>N<sub>2</sub> monolayer make it one of the top options for the anode component in future rechargeable CIBs.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"699 ","pages":"Article 416790"},"PeriodicalIF":2.8,"publicationDate":"2024-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143094509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jia Han , Chuanyi Wu , Yangzhou Wang , Jin Wang , Baojuan Kang , Shixun Cao , Jincang Zhang , Fei Chen
{"title":"Effects of film thickness on the superconductivity of LaSi2(00l)/Si(100) films","authors":"Jia Han , Chuanyi Wu , Yangzhou Wang , Jin Wang , Baojuan Kang , Shixun Cao , Jincang Zhang , Fei Chen","doi":"10.1016/j.physb.2024.416785","DOIUrl":"10.1016/j.physb.2024.416785","url":null,"abstract":"<div><div>In this paper, we studied the superconducting properties of the LaSi<sub>2</sub>(00<em>l</em>)/Si(100) single-crystalline thin films prepared by the molecular beam epitaxy (MBE) method with different thicknesses via electro-transport and magnetic properties measurements. The S50 (sample with deposition thickness around 50 nm) exhibits the highest superconducting transition temperature (<em>T</em><sub>c</sub>) of 2.62 K, which is higher than that of the bulk LaSi<sub>2</sub>. The variation of <em>T</em><sub>c</sub> with film thickness is within 8 %. In addition, the upper critical field (<em>H</em><sub>c2</sub>) increases with reducing film thickness. Especially for the thinnest LaSi<sub>2</sub> film with deposition thickness around 10 nm, the <em>H</em><sub>c2</sub> shows a sharp increase and the flux jump activity disappears, which is due to the defects and disorders from the interfacial effect. Our work completes the superconducting properties of LaSi<sub>2</sub> films, which helps to understand the influence and modulation of film thickness on superconductivity in LaSi<sub>2</sub> system.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"699 ","pages":"Article 416785"},"PeriodicalIF":2.8,"publicationDate":"2024-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142758952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}