Physica B-condensed Matter最新文献

{"title":"Design and optimization of Ca3BiI3-based solar cells through a comprehensive analysis of optoelectronic properties and charge transport layers using simulation and ML","authors":"Bipul Chandra Biswas ,&nbsp;Asadul Islam Shimul ,&nbsp;Abdulaziz A. Alshihri ,&nbsp;Ali El-Rayyes ,&nbsp;Mohd Taukeer Khan ,&nbsp;Md. Azizur Rahman","doi":"10.1016/j.physb.2025.417770","DOIUrl":"10.1016/j.physb.2025.417770","url":null,"abstract":"<div><div>Ca₃BiI₃ based solar cells have garnered interest owing to their superior semiconducting characteristics; however, achieving optimal interfacial band alignment with electron transport layers (ETLs) and hole transport layers (HTLs) continues to pose an obstacle for efficiency. This research employs first-principles density functional theory (DFT) to examine the optoelectronic characteristics of Ca₃BiI₃ perovskite and assess its viability for photovoltaic applications. The device configuration, Ag/FTO/ETL/Ca₃BiI₃/HTL/Ni, is examined using three ETLs and six HTLs to determine the optimal material combination. Device parameter optimization, encompassing layer thickness, doping, resistance, and others critical parameters, was performed utilizing the SCAPS-1D simulation tool under AM 1.5 circumstances. The best design, Ag/FTO/IGZO/Ca₃BiI₃/PTAA/Ni, exhibited enhanced performance with a power conversion efficiency (PCE) of 27.64 %, an open-circuit voltage (V_OC) of 0.8436 V, a short-circuit current density (J_SC) of 38.2142 mA/cm², and a fill factor (FF) of 85.74 %. This study combines machine learning with modeling approaches to enhance future photovoltaic developments.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417770"},"PeriodicalIF":2.8,"publicationDate":"2025-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of high temperature and pressure on the structure and phase transition of Mg2SiO4 oxide via molecular dynamics simulation","authors":"Dung Nguyen Trong ,&nbsp;Tuan Tran Quoc ,&nbsp;Ştefan Ţălu","doi":"10.1016/j.physb.2025.417784","DOIUrl":"10.1016/j.physb.2025.417784","url":null,"abstract":"<div><div>This article investigates the effects of high temperature and high pressure (P) on the structure and phase transition process of Mg₂SiO₄ oxide using molecular dynamics simulations with Oganov's pair interaction potential. The study reveals that as the temperature increases from 300 K to 6000 K, Mg₂SiO₄ transitions from an amorphous state to a liquid state. This transition is accompanied by an increase in lengths of the links (Mg-Mg, Mg-Si, Mg-O, Si-Si, Si-O, O-O) and changes in the numbers of structural units (SiO₄, SiO₅, SiO₆, MgO₃, MgO₄, MgO₅, MgO₆). While the total system size and total energy of systems increase, the bond angles of Si-O-Si and Mg-O-Mg remain relatively stable under 0 GPa. The phase transition temperature (T_m) of Mg₂SiO₄ is determined to be 2168 K. Furthermore, varying P from 0 to 200 GPa at temperatures of 300, 1000, 2000, 4000, and 6000 K reveals a relationship between temperature and pressure. At 300 K, the system can withstand a maximum pressure of 200 GPa, while at 6000 K, the minimum pressure is 0 GPa. These findings provide valuable insights for future experimental research and contribute to the development of high-performance materials for applications in the communications industry.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417784"},"PeriodicalIF":2.8,"publicationDate":"2025-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization of the dielectric and ferroelectric properties of Er3+ and Yb3+ co-doped PMN-0.3 PT ceramics","authors":"S. Yakubu ,&nbsp;Funsho Olaitan Kolawole ,&nbsp;J.A. Eiras ,&nbsp;M.H. Lente","doi":"10.1016/j.physb.2025.417774","DOIUrl":"10.1016/j.physb.2025.417774","url":null,"abstract":"<div><div>In today's growing semiconductor and electronic economy, PMN-PT is one of the most important ferroelectric materials due to its excellent physical properties, crucial for the development of sensors, actuators, and ultrasonic transducers. One of the frontiers of property enhancement for ferroelectric materials is through rare-earth co-doping. Hence, this study focuses on investigating the dielectric and ferroelectric properties of Er-Yb co-doped PMN-0.3 PT ceramic produced by the traditional sintering technique. The synthesized PMN-0.3 PT-Er-Yb powder showed a distorted perovskite structure with tetragonal symmetry. For dielectric properties, T_c of 157 °C and 155 °C was found for pure and RE co-doped compositions, with corresponding ε_max of 15333 and 24300, respectively. For ferroelectric response, P_r of 27.06 μC/cm² and E_c of 3.86 kV/cm were found for the RE co-doped, while the pure composition shows P_r of 14.04 μC/cm² and E_c of 5.44 kV/cm. These physical properties make the RE-doped PMN-PT composition a potential multifunctional material.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417774"},"PeriodicalIF":2.8,"publicationDate":"2025-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145046852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of how illumination affects the electrical properties of Al/n-gap Schottky diodes with varying amounts of Cu NCs-doped wm-cqd interlayer","authors":"O.N. Enis ,&nbsp;H. Nadaroğlu ,&nbsp;B. Güzeldir ,&nbsp;M. Sağlam","doi":"10.1016/j.physb.2025.417776","DOIUrl":"10.1016/j.physb.2025.417776","url":null,"abstract":"<div><div>In this study, the electrical characteristics of Al/n-GaP Schottky diodes fabricated with and without white mulberry (Morus alba) carbon quantum dot (WM-CQD) interfacial layers, which were doped with different amounts of copper nanoclusters (Cu NCs), were investigated under various illumination conditions. WM-CQDs were synthesized using a facile green hydrothermal method with urea and citric acid as precursors. The structural and optical properties of WM-CQDs doped with varying amounts of Cu NCs were examined using X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR), and photoluminescence (PL) spectroscopy techniques. Subsequently, WM-CQDs doped with assorted amounts of Cu NCs were deposited onto the n-GaP semiconductor through the spin coating technique to create a thin interface layer at the Al/n-GaP junction. After fabricating the Al/n-GaP/Au reference diode, Al/WM-CQD/n-GaP/Au and Al/WM-CQD:CuNCs/n-GaP/Au structures were created by forming circular Al contacts with a 1 mm radius on the interface layer. The junction parameters of Schottky diodes produced with and without interface layers under laboratory conditions were calculated using various techniques based on the current-voltage (I-V) characteristics, which were first measured at room temperature in the dark, and then at room temperature, in the dark, and under different illumination conditions. The comparatively evaluation of results revealed the effects of WM-CQDs doped with Cu NCs on the illumination sensitivity of the Al/n-GaP junction.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417776"},"PeriodicalIF":2.8,"publicationDate":"2025-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of strain on the physical properties of Ni2MSbO6 (M = Sc, In)","authors":"Akbar Ali ,&nbsp;Taoufik Saidani ,&nbsp;Kainat Ayaz ,&nbsp;Izaz Ul Haq ,&nbsp;Atef Abdelkader ,&nbsp;Abd Haj Ismail ,&nbsp;Nawal Al-Hoshani ,&nbsp;Imad Khan","doi":"10.1016/j.physb.2025.417771","DOIUrl":"10.1016/j.physb.2025.417771","url":null,"abstract":"<div><div>First-principles calculations were carried out to understand the impact of uniaxial strain on the structural, electronic, ferroelectric, and magnetic properties of corundum double oxides Ni₂MSbO₆ (M = Sc, In) for multiferroic and piezoelectric applications. These compounds are crystallized in rhombohedral crystal symmetry with ferroelectric space group R3 no. 146. Structural relaxation revealed that these compounds have antiferromagnetic (AFM) spin ordering due to the anti-parallel alignment of magnetic cations. The applied strain significantly affects the physical properties of Ni₂ScSbO₆ and Ni₂InSbO₆. The GGA + U method was used to handle the strong electron-electron interactions and calculate their magnetic and electronic properties. These are direct band gap semiconductors having band gap values of 2.68 and 1.38 eV respectively, which lie in the visible range of the electromagnetic spectrum, enabling them functional materials for optoelectronic, transistors, and photo-detector devices. The band gap of these materials can be tuned with uniaxial strain and increase and decrease linearly under compressive and tensile strain. Mechanical parameters confirmed their stability. The calculated values of polarization and magnetic moments are 11.24/10.19 μC/cm² and 1.84/1.87 μ_B/Ni²⁺ for Ni₂ScSbO₆/Ni₂InSbO₆. The values of polarization can be reversed by externally applied strain, therefore these compounds can be used in ferroelectric devices. The thermodynamics coefficients confirm that at low temperatures, the specific heat at constant volume Cv follows Debye's law (C_v <span><math><mrow><mi>α</mi></mrow></math></span> T³), while at higher temperatures, it converges to the Dulong-Petit limit (Cv = 3 nR). The relatively low values of α and higher Debye temperature (Θ_D) indicate that the studied Ni₂MSbO₆ (M = Sc, In) possess high hardness, larger bulk moduli, and improved thermal stability and conductivity.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417771"},"PeriodicalIF":2.8,"publicationDate":"2025-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Atomic vacancy effects on enhanced photoresponse in 2D MoS2/VSe2 lateral heterostructure","authors":"You Xie,&nbsp;Zheng-Yong Chen,&nbsp;Xin-Wen Jin,&nbsp;Yi-An Liu,&nbsp;Jia-Hao Wang,&nbsp;Li-Yong Chen,&nbsp;Tao Zhang","doi":"10.1016/j.physb.2025.417775","DOIUrl":"10.1016/j.physb.2025.417775","url":null,"abstract":"<div><div>The development of high-performance polarization-sensitive photodetectors is crucial for advancing optical communication, imaging systems, yet remains challenging due to fundamental limitations in conventional materials. This study presents a comprehensive investigation of vacancy-engineered MoS₂/VSe₂ van der Waals heterostructures for polarization-sensitive photodetection applications. Through systematic first-principles calculations and non-equilibrium Green's function methods, we demonstrate that strategic vacancy introduction enables precise control over both light absorption characteristics and photocurrent generation. The MoS₂/VSe₂ heterostructure exhibits remarkable spectral tunability, with single-atom vacancies inducing red-shifted absorption while double vacancies cause blue-shifts. Most notably, double-Se vacancies achieve a record 210 % photocurrent enhancement through suppressed carrier recombination, accompanied by exceptional polarization sensitivity (extinction ratio = 364.6 at 2.4 eV). Vacancy defects generate novel optoelectronic phenomena including reversible photocurrent switching under specific illumination conditions. These findings establish vacancy engineering as a powerful approach for developing next-generation polarized-light photodetectors with performance metrics surpassing conventional 2D material systems.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417775"},"PeriodicalIF":2.8,"publicationDate":"2025-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145027527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Application of ZnO quantum dots in photodetectors","authors":"Lingling Chu ,&nbsp;Chao Xu ,&nbsp;Songlin Zhou ,&nbsp;Shoujin Zhu","doi":"10.1016/j.physb.2025.417778","DOIUrl":"10.1016/j.physb.2025.417778","url":null,"abstract":"<div><div>This article reviews the application progress of ZnO quantum dots (QD) in photodetectors, with a focus on exploring their performance optimization in homojunction and heterojunction photodetectors, as well as the potential applications in UV and multi wavelength photodetection fields. ZnO QD have become an important material for high-performance photodetectors due to quantum confinement effect, and excellent optoelectronic properties. In homojunction photodetectors, the I-type band structure formed by ZnO QD and nanowires effectively promotes the separation and transport of photo generated carriers, significantly improving the responsivity and sensitivity of the device. In heterojunction photodetectors, ZnO QD are combined with two-dimensional materials or other QD, utilizing the band bending and built-in electric field at the interface to further optimize the carrier separation efficiency and enhance the photodetection performance. In the application field, ZnO QD exhibit high sensitivity and fast response in ultraviolet photodetection, while in multi wavelength photodetection, by combining with other materials, wide spectral absorption from ultraviolet to near-infrared is achieved, expanding their application range. In summary, ZnO QD-based photodetectors have broad application prospects in the field of high-performance photodetection. Future research will further explore new material combinations and structural designs to meet diverse photodetection needs.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417778"},"PeriodicalIF":2.8,"publicationDate":"2025-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145027528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of La and O deficiencies on AC & DC electrical conduction in La2Ti2O7 ceramics","authors":"Ravina Swami ,&nbsp;A.K. Shukla ,&nbsp;K. Sreenivas","doi":"10.1016/j.physb.2025.417777","DOIUrl":"10.1016/j.physb.2025.417777","url":null,"abstract":"<div><div>Frequency and temperature dependence of dielectric properties of La₂Ti₂O₇ ceramics in the respective ranges (10⁻¹ to 10⁶ Hz) and (123–473 K) are analysed. Grain, grain boundary and electrode polarisation effects are distinguished from impedance Cole-Cole analysis. Temperature dependence of grain capacitance reveals the polar nature of La₂Ti₂O₇. Charge carriers contributing to the observed changes in the temperature dependent dielectric constant <em>εʹ</em>, alternating current (AC) and direct current (DC) conductivity are identified. Temperature independent Jonscher's power law exponent (<em>s</em> ∼ 1) and the low polarizability strength, explain the stability of <em>εʹ</em> in the low temperature range (&lt;283 K). Interaction of holes and electrons in accordance with Rezlescu's model is reflected as a dip in the temperature dependent DC conductivity, and a diffused hump in <em>εʹ</em>(<em>T</em>) in the low temperature range (123–250 K). Electrical conductivity in the high temperature range (250–473 K) is attributed to hopping mechanism.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417777"},"PeriodicalIF":2.8,"publicationDate":"2025-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145061230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comprehensive Experimental and DFT-Based Insights into the Structural and Optical Investigations of Nanocrystalline Coomassie Brilliant Blue R-250 Thin Films","authors":"Nasser Almutlaq ,&nbsp;M.S. Moqbel ,&nbsp;A.H. Ammar ,&nbsp;Al-Shimaa Badran ,&nbsp;Ali Ibrahim ,&nbsp;A.A. Atta ,&nbsp;Abdulaziz N. Alharbi ,&nbsp;A.A.M. Farag","doi":"10.1016/j.physb.2025.417773","DOIUrl":"10.1016/j.physb.2025.417773","url":null,"abstract":"<div><div>This study presents a comprehensive investigation into the structural, optical, and electronic properties of nanocrystalline Coomassie Brilliant Blue R-250 (CBBR), combining experimental measurements with theoretical calculations. X-ray diffraction (XRD) confirmed a polycrystalline cubic phase in the CBBR powder with an average crystallite size of 60.3 nm and minimal lattice strain. In contrast, thin films exhibited an amorphous structure with significantly smaller crystallite sizes (∼2.54 nm) and elevated microstrain, attributed to rapid film formation. UV–Vis spectroscopy revealed both direct (3.58 eV and 4.81 eV) and indirect (2.19 eV and 3.10 eV) optical transitions, while an Urbach energy of 0.59 eV indicated moderate structural disorder. Dielectric analysis showed interband transitions with oscillator and dispersion energies of 7.626 eV and 25.6 eV, respectively, and a refractive index near 2.4, accompanied by a high extinction coefficient. Density Functional Theory (DFT) calculations using the B3LYP/6–311++G(d,p) level yielded a HOMO–LUMO energy gap of 2.624 eV, confirming semiconducting behavior. Additionally, the molecule displayed a strong third-order nonlinear optical (NLO) response, with hyperpolarizability values far exceeding those of standard NLO materials such as urea. The combination of these properties demonstrates the potential of CBBR thin films in advanced optoelectronic devices, UV photodetectors, and optical limiting technologies.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417773"},"PeriodicalIF":2.8,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145005387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Controlling structural, magnetic and magnetocaloric properties of Pr0.6Sr0.35A0.05MnO3 through size variation","authors":"R. Thaljaoui ,&nbsp;F. Khammassi ,&nbsp;Abdullah Aljaafari","doi":"10.1016/j.physb.2025.417772","DOIUrl":"10.1016/j.physb.2025.417772","url":null,"abstract":"<div><div>The influence of both particle size and monovalent cation doping (potassium (K), sodium (Na), and silver (Ag)) at the Sr sites on the structural, magnetic, and magnetocaloric properties of Pr_0.6Sr₀.₃₅A_0.05MnO₃ manganites, synthesized using the sol-gel (SG) method, has been examined. The compounds crystallize in an orthorhombic structure with the space group Pnma. Scanning Electron Microscopy (SEM) analysis revealed a variety of microstructures in the synthesized materials, ranging from micrometric to ultrafine grain sizes. Magnetic measurements as a function of temperature reveal a transition from paramagnetic (PM) to a ferromagnetic (FM) state at the Curie temperature <em>T</em>_<em>C</em>. The findings demonstrate a clear correlation between particle size and <em>T</em>_<em>C</em>, as particle size decreases, <em>T</em>_<em>C</em> decreases from 253.20 K to 231.23 K, significantly altering the magnetic properties of the material. Additionally, a decrease in particle size triggers the emergence of a Griffiths phase in the system, with the Griffiths phase percentage (%<em>GP</em>) increasing from 3.09 % to 15.97 %. To characterize the magnetic ordering associated with the PM-FM transition, Banerjee's criteria and Landau phase transition analysis were employed, both confirming second-order transitions. Under an applied magnetic field <em>H</em> = 2 T, the maximum magnetic entropy changes were measured as 1.37 J kg⁻¹ K⁻¹, 0.88 J kg⁻¹ K⁻¹, and 1.47 J kg⁻¹ K⁻¹ for Na, K and Ag-doped samples, respectively. Notably, the Pr_0.6Sr₀.₃₅Ag_0.05MnO₃ sample, with the smallest particle size of D_SEM = 0.001 μm, exhibits the highest relative cooling power (<em>RCP)</em> value of 102.12 J kg⁻¹ at 2 T. The magnetocaloric properties of the synthesized materials were further evaluated using performance metrics, such as refrigerant capacity (<em>RC</em>), temperature-averaged entropy change (<em>TEC</em>), and normalized refrigerant capacity (<em>NRC</em>). These results highlight the potential of these oxides for magnetic cooling technology.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417772"},"PeriodicalIF":2.8,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145027525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}