Physica B-condensed Matter最新文献_第8页

Disordered granular aluminium films: Quantum corrections and resistive peak above the superconducting transition 无序颗粒铝膜：超导跃迁之上的量子修正和电阻峰

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-09-11 DOI: 10.1016/j.physb.2025.417796

Rukshana Pervin , Mir Basit Hussain , Umesh Chandra Thuwal

{"title":"Disordered granular aluminium films: Quantum corrections and resistive peak above the superconducting transition","authors":"Rukshana Pervin , Mir Basit Hussain , Umesh Chandra Thuwal","doi":"10.1016/j.physb.2025.417796","DOIUrl":"10.1016/j.physb.2025.417796","url":null,"abstract":"<div><div>The enigmatic resistive peak observed just prior to the onset of superconductivity, traditionally attributed to quantum corrections from superconducting fluctuations and weak localization, has been extensively studied in conventional films. But what happens in granular aluminium films with tunable disorder? We tackle this question by probing granular aluminium films, revealing how competing quantum effects influence the transport behaviour near the superconducting transition. Through high-precision magnetotransport experiments, we disentangle the contributions of Aslamazov-Larkin and Maki-Thompson fluctuations and demonstrate how strong electron-electron interactions suppress weak localization effects. By analyzing the evolution of the modified Larkin parameter alongside dephasing dynamics, we identify the dominant scattering mechanisms in the regime where ln(<em>T</em>/<em>T</em><sub><em>c</em></sub>) < 1. Our findings provide new insights into the crossover from fluctuation-driven to disorder-dominated transport, bridging the understanding between crystalline superconductors and their amorphous granular counterparts.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417796"},"PeriodicalIF":2.8,"publicationDate":"2025-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145096787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of anchoring effects in ferroelectric liquid crystals 铁电液晶中锚定效应的研究

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-09-11 DOI: 10.1016/j.physb.2025.417761

Aleksey Kudreyko , Valeriy Lapanik , Vladimir Chigrinov

{"title":"Investigation of anchoring effects in ferroelectric liquid crystals","authors":"Aleksey Kudreyko , Valeriy Lapanik , Vladimir Chigrinov","doi":"10.1016/j.physb.2025.417761","DOIUrl":"10.1016/j.physb.2025.417761","url":null,"abstract":"<div><div>Electrically suppressed ferroelectric liquid crystal mode is observed when the long molecular axes within the helical structure are uniformly distributed and cell thickness is greater than the helix pitch, i.e., the helix is not suppressed by the bounding surfaces. The role of the anchoring energy, caused by the aligning surfaces is to orient the helical axis without any suppression of the helix cone. These conditions make the balance between surface anchoring interactions and elastic energy highly important in the electro-optical properties of the cell. Hence, a trade-off between the helix pitch and the liquid crystal layer thickness is crucial for the alignment quality. In this study we deal with the electric field free steady-state two-domain twisted helical structure. Our hypothesis in this article is that the domain structures are explained by the effect of polar interactions between the ferroelectric liquid crystal molecules and the surface. Consideration of this term leads to the decrease of the free energy when the contribution from polar interactions increases. Theoretical investigation of the helix unwinding versus liquid crystal thickness shows that the polar interactions promote formation of uniform structures. This investigation is significant in understanding the fundamentals of optical effects, occurring in electrically suppressed ferroelectric liquid crystal mode.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417761"},"PeriodicalIF":2.8,"publicationDate":"2025-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145096845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of Al doping on structural and dielectric properties of YFeO3 multiferroic system Al掺杂对YFeO3多铁体系结构和介电性能的影响

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-09-10 DOI: 10.1016/j.physb.2025.417781

R. Falconi , M. Solórzano , R. López , A. Durán

{"title":"Influence of Al doping on structural and dielectric properties of YFeO3 multiferroic system","authors":"R. Falconi , M. Solórzano , R. López , A. Durán","doi":"10.1016/j.physb.2025.417781","DOIUrl":"10.1016/j.physb.2025.417781","url":null,"abstract":"<div><div>Structural evolution, dielectric and electrical polarization measurements as a function of temperature and frequency, for Y(Fe<sub>1-x</sub>Al<sub>x</sub>)O<sub>3</sub>, 0.0 ≤ x ≤ 0.075, have been evaluated. Structural analysis showed that 7.5 % of Al doping in the YFeO<sub>3</sub> matrix, shrinking the cell volume by about 3 %. XPS studies revealed that oxidation states of cations are Fe<sup>3+</sup>, Fe<sup>2+</sup>, and Al<sup>3+</sup>, being Fe<sup>3+</sup> the most predominant state. Dielectric constant and loss tangent measurements, as a function of temperature and frequencies, for YFeO<sub>3</sub> exhibited a step-like anomaly around 450 K. Al doping led to a reduction in both the anomaly and the weak electrical polarization. Furthermore, at the high doping level, the tan (<em>δ</em>) and electrical conductivity at room temperature and low frequencies, decreased by 95 %, and 99 %, respectively. The activation energy obtained from AC conductivity, using Arrhenius-type equation, varied from 0.9 to 1.1 eV in the high temperature regime and it is related with ionic conductivity.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417781"},"PeriodicalIF":2.8,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Band engineering and enhanced photoluminescence via Al donor doping in ZnO thin films Al给体掺杂ZnO薄膜的能带工程及增强光致发光

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-09-10 DOI: 10.1016/j.physb.2025.417788

Zihan Li , Yinlong Chen , Xiangdong Meng , Binbing Zhang, Guangye Fan, Yuxue Zhou, Shaobo Zhang, Ruijin Hu, Feng Xu

{"title":"Band engineering and enhanced photoluminescence via Al donor doping in ZnO thin films","authors":"Zihan Li , Yinlong Chen , Xiangdong Meng , Binbing Zhang, Guangye Fan, Yuxue Zhou, Shaobo Zhang, Ruijin Hu, Feng Xu","doi":"10.1016/j.physb.2025.417788","DOIUrl":"10.1016/j.physb.2025.417788","url":null,"abstract":"<div><div>Al-doped zinc oxide (AZO) compatible with silicon planar processes were fabricated using a sol-gel method, and their optical properties, with a particular emphasis on luminescence performance and bandgap engineering, were systematically investigated. Analysis of transmission spectra revealed a blue shift in the bandgap of AZO films with increasing Al doping concentration, demonstrating bandgap controllability through doping regulation. Photoluminescence (PL) spectra exhibited dual visible emission peaks at 485 (bluish-green) and 527 nm (green), where the 1 % doping concentration achieved optimal luminescence intensity by balancing defect-mediated recombination and carrier transport. Through the analysis of the PL spectra, we have identified that the visible - light emission peaks at 485 and 527 nm originate from oxygen vacancies and are attributed to the substitution of Al for Zn, respectively. Additionally, based on the PL spectra, we have determined the position of the donor energy level, which is located 1.02 eV below the bottom of the conduction band.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417788"},"PeriodicalIF":2.8,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Crystallization dynamics of Se80In5Te15-xSnx chalcogenide glasses: Model-Fitted and model-free analysis for phase-change memory applications Se80In5Te15-xSnx硫系玻璃的结晶动力学：相变记忆应用的拟合模型和非模型分析

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-09-10 DOI: 10.1016/j.physb.2025.417787

Imtiyaz H. Khan , Aditya Srivastava , Shamshad A. Khan , Ahmad Umar , Sajid Ali Ansari , Ahmed A. Ibrahim , Archana Srivastava

{"title":"Crystallization dynamics of Se80In5Te15-xSnx chalcogenide glasses: Model-Fitted and model-free analysis for phase-change memory applications","authors":"Imtiyaz H. Khan , Aditya Srivastava , Shamshad A. Khan , Ahmad Umar , Sajid Ali Ansari , Ahmed A. Ibrahim , Archana Srivastava","doi":"10.1016/j.physb.2025.417787","DOIUrl":"10.1016/j.physb.2025.417787","url":null,"abstract":"<div><div>This study investigates the crystallization behavior of Se<sub>80</sub>In<sub>5</sub>Te<sub>15-x</sub>Sn<sub>x</sub> chalcogenide glasses using both model-fitting and model-free analytical techniques. The glasses were synthesized via the melt-quenching method, and elemental mapping confirmed their chemical homogeneity. X-ray diffraction confirmed the amorphous nature of the samples. Non-isothermal differential scanning calorimetry (DSC) was employed to analyze the crystallization kinetics. Activation energy for structural relaxation (ΔEt) was determined using Kissinger and Moynihan approaches, while model-free methods—including Kissinger-Akahira-Sunose (KAS), Flynn-Wall-Ozawa (FWO), and Tang-Starink (TS)—were used to calculate the temperature- and conversion-dependent crystallization activation energy (ΔEc). Results indicated that substituting Te with Sn significantly influences ΔEc, suggesting modifications in the energy barrier for phase transitions. The consistency of results across various methods confirms their reliability for thermal analysis. Overall, this research highlights the role of Sn in modulating crystallization behavior and enhances the understanding of Se-based glasses for potential use in phase-change memory applications.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417787"},"PeriodicalIF":2.8,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145096848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Integrating the structural, optical and dielectric behaviour of Al/Ti co-doped ZnO nanoparticles for optoelectronic applications 集成Al/Ti共掺杂ZnO纳米粒子的结构、光学和介电性能在光电应用中的应用

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-09-09 DOI: 10.1016/j.physb.2025.417783

Ravi Kant , Ranvir Singh Panwar

{"title":"Integrating the structural, optical and dielectric behaviour of Al/Ti co-doped ZnO nanoparticles for optoelectronic applications","authors":"Ravi Kant , Ranvir Singh Panwar","doi":"10.1016/j.physb.2025.417783","DOIUrl":"10.1016/j.physb.2025.417783","url":null,"abstract":"<div><div>In this study, Al/Ti co-doped ZnO nanoparticles were synthesized via the co-precipitation method. X-ray diffraction (XRD) analysis confirmed the preservation of wurtzite hexagonal crystal structure across all samples, without any secondary phases. Scanning and transmission electron microscopy (SEM and TEM) revealed that pure ZnO nanoparticles exhibited a nearly spherical morphology, which was mixed with some elongated particles with doping of Ti, indicating dopant-induced modifications in growth dynamics. Fourier-transform infrared (FTIR) spectroscopy identified the characteristic Zn–O vibrational modes, with slight variations in intensity corresponding to the presence of dopants. X-ray photoelectron spectroscopy (XPS) analysis indicated the formation of oxygen vacancies, evidenced by the broadening and shifting of O 1s peaks, suggesting successful incorporation of Al and Ti into the ZnO lattice. UV–Visible spectroscopy showed a blue shift in the absorption edge and an increase in the optical bandgap, attributed to quantum confinement. The dielectric constant increased significantly, ∼450 for Al/Ti co-doped ZnO, accompanied by low dielectric loss, which is likely due to enhanced defect polarization and the presence of oxygen vacancies. Furthermore, electrical conductivity was improved, potentially due to an increase in charge carrier with dopant ions. These findings demonstrate that Al/Ti co-doping make ZnO as promising candidate for optoelectronic and high-frequency electronic devices.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417783"},"PeriodicalIF":2.8,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tailoring WO3 thin films for smart windows: Role of Ar/O2 ratio in reactive sputtering on film quality and electrochromism 为智能窗定制WO3薄膜：反应溅射中Ar/O2比对薄膜质量和电致变色的影响

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-09-09 DOI: 10.1016/j.physb.2025.417785

Kilari Naveen Kumar , G.V. Ashok Reddy , M. Anantha Sunil , Sheik Abdul Sattar , Dhanalakshmi Radhalayam , K. Munirathnam , P. Rosaiah , B.H. Doreswamy , Nunna Guru Prakash , Tae Jo Ko

{"title":"Tailoring WO3 thin films for smart windows: Role of Ar/O2 ratio in reactive sputtering on film quality and electrochromism","authors":"Kilari Naveen Kumar , G.V. Ashok Reddy , M. Anantha Sunil , Sheik Abdul Sattar , Dhanalakshmi Radhalayam , K. Munirathnam , P. Rosaiah , B.H. Doreswamy , Nunna Guru Prakash , Tae Jo Ko","doi":"10.1016/j.physb.2025.417785","DOIUrl":"10.1016/j.physb.2025.417785","url":null,"abstract":"<div><div>Tungsten oxide (WO<sub>3</sub>) thin films were deposited on fluorine-doped tin oxide (FTO) and Corning glass (CG) substrates using direct current magnetron sputtering (DCMS) at room temperature. The films were synthesized under varying argon-to-oxygen (Ar:O<sub>2</sub>) gas flow ratios of 1:1, 2:1, 3:1, 4:1, 5:1, and 6:1 to investigate the influence of sputtering atmosphere on their structural, optical, and electrochromic properties. X-ray diffraction (XRD) analysis confirmed that all films exhibited an amorphous structure, favorable for electrochromic behavior due to improved ion mobility. UV–Vis spectroscopy revealed that optical transmittance varied with gas ratio, peaking at 91 % for the film deposited at an Ar:O<sub>2</sub> ratio of 4:1. This suggests enhanced film uniformity and reduced light scattering or absorption at this ratio. Electrochemical analysis showed that the 4:1 ratio also yielded the best electrochromic performance. At an operating voltage window of ±0.4 V, the film demonstrated a high coloration efficiency (CE) of 42 cm<sup>2</sup>/C. Chronoamperometry measurements indicated fast switching behavior with a coloration time of 3.71 s and a bleaching time of 1.71 s. These results emphasize the critical role of gas flow ratio in tailoring the functional characteristics of WO<sub>3</sub> films. The optimal 4:1 Ar:O<sub>2</sub> ratio offers a balanced combination of high optical transparency, fast response time, and efficient charge usage, making these films highly suitable for electrochromic applications such as smart windows and low-power display technologies.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417785"},"PeriodicalIF":2.8,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Theoretical investigation into melt and shock behaviors of tantalum under extremes 钽在极端条件下的熔化和冲击行为的理论研究

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-09-09 DOI: 10.1016/j.physb.2025.417767

Tran Dinh Cuong , Anh D. Phan

引用次数: 0

Investigation on luminescence properties and applications for Dy3+ and Eu3+ activated Ba3Y2B6O15 phosphors Dy3+和Eu3+活化Ba3Y2B6O15荧光粉的发光性能及应用研究

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-09-08 DOI: 10.1016/j.physb.2025.417716

Haokun Dong , Xu Wang , Chaoyong Deng , Min Zhang

引用次数: 0

Bath temperature-dependent growth of nanocrystalline Bi2S3 films via a seed-layer-assisted approach for photoelectrochemical applications 基于光电化学应用的种子层辅助方法的纳米晶Bi2S3膜的浴温依赖生长

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-09-08 DOI: 10.1016/j.physb.2025.417766

U. Chalapathi , K. Ashok , Radhalayam Dhanalakshmi , Sambasivam Sangaraju , Krithikaa Mohanarangam , Vasudeva Reddy Minnam Reddy , Athipalli Divya , Adem Sreedhar , Mohd Shkir , Si-Hyun Park

{"title":"Bath temperature-dependent growth of nanocrystalline Bi2S3 films via a seed-layer-assisted approach for photoelectrochemical applications","authors":"U. Chalapathi , K. Ashok , Radhalayam Dhanalakshmi , Sambasivam Sangaraju , Krithikaa Mohanarangam , Vasudeva Reddy Minnam Reddy , Athipalli Divya , Adem Sreedhar , Mohd Shkir , Si-Hyun Park","doi":"10.1016/j.physb.2025.417766","DOIUrl":"10.1016/j.physb.2025.417766","url":null,"abstract":"<div><div>Bismuth sulfide (Bi<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>S<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>) is a promising photoelectrode material for photoelectrochemical (PEC) water splitting, but its efficiency is limited by poor charge transport and rapid carrier recombination. In this work, Bi<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>S<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> films were fabricated via a seed-layer-assisted chemical bath deposition process, and the influence of bath temperature on their structural, optical, and PEC properties was systematically investigated. Morphological evolution from compact grains at 30 °C to vertically aligned nanorods at 50 °C, accompanied by increased porosity at higher temperatures, was observed. Elemental analysis indicated temperature-dependent variations in the Bi/S ratio, reflecting altered growth kinetics. Optical studies revealed slight bandgap shifts, while PEC measurements showed a steady increase in photocurrent density with temperature, reaching 11.6 mA/cm<sup>2</sup> at 70 °C due to improved film thickness and porosity. The film deposited at 80 °C exhibited the highest photocurrent stability. Electrochemical impedance spectroscopy further confirmed reduced charge-transfer resistance at elevated temperatures, highlighting enhanced charge separation. These results demonstrate that bath temperature is a key parameter for tuning Bi<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>S<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> film properties and provide a simple, scalable strategy to improve PEC water splitting efficiency.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417766"},"PeriodicalIF":2.8,"publicationDate":"2025-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145046853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0