HfP2单层:一种晶格导热系数低、热电性能优异的材料

IF 2.8 3区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
Gurpal Singh Khosa , Shuchi Gupta , Ranjan Kumar
{"title":"HfP2单层:一种晶格导热系数低、热电性能优异的材料","authors":"Gurpal Singh Khosa ,&nbsp;Shuchi Gupta ,&nbsp;Ranjan Kumar","doi":"10.1016/j.physb.2025.417349","DOIUrl":null,"url":null,"abstract":"<div><div>Density functional theory based first principle calculations are performed to investigate the properties of <span><math><msub><mrow><mtext>HfP</mtext></mrow><mrow><mn>2</mn></mrow></msub></math></span> monolayer having hexagonal lattice structure (lattice constant = 3.98 Å). The investigated results show that it is an indirect band gap semiconductor with the energy band gap of 1.26 eV. The projected density of states calculation demonstrates that the band formation in <span><math><msub><mrow><mtext>HfP</mtext></mrow><mrow><mn>2</mn></mrow></msub></math></span> monolayer is mainly contributed by the ‘d’ and ‘p’ orbital of Hf and P atoms respectively. The non existence of imaginary curves in the phonon spectra, calculated cohesive energy and elastic constants confirmed that <span><math><msub><mrow><mtext>HfP</mtext></mrow><mrow><mn>2</mn></mrow></msub></math></span> monolayer is dynamically, energetically and mechanically stable. In order to assess the thermoelectric performance of <span><math><msub><mrow><mtext>HfP</mtext></mrow><mrow><mn>2</mn></mrow></msub></math></span> monolayer, the electronic transport coefficients and lattice thermal conductivity has been calculated. It is found to possess a large Gruneisen parameter and low phonon group velocity, hence a low lattice thermal conductivity of 0.12 Wm<sup>−1</sup>K<sup>−1</sup> at room temperature. At room temperature, the n-type (p-type) monolayer is found to have a ZT value of 1.81 (1.34). The obtained results show that <span><math><msub><mrow><mtext>HfP</mtext></mrow><mrow><mn>2</mn></mrow></msub></math></span> monolayer could be used as a thermoelectric material.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"713 ","pages":"Article 417349"},"PeriodicalIF":2.8000,"publicationDate":"2025-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"HfP2 monolayer: A material with low lattice thermal conductivity and excellent thermoelectric performance\",\"authors\":\"Gurpal Singh Khosa ,&nbsp;Shuchi Gupta ,&nbsp;Ranjan Kumar\",\"doi\":\"10.1016/j.physb.2025.417349\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Density functional theory based first principle calculations are performed to investigate the properties of <span><math><msub><mrow><mtext>HfP</mtext></mrow><mrow><mn>2</mn></mrow></msub></math></span> monolayer having hexagonal lattice structure (lattice constant = 3.98 Å). The investigated results show that it is an indirect band gap semiconductor with the energy band gap of 1.26 eV. The projected density of states calculation demonstrates that the band formation in <span><math><msub><mrow><mtext>HfP</mtext></mrow><mrow><mn>2</mn></mrow></msub></math></span> monolayer is mainly contributed by the ‘d’ and ‘p’ orbital of Hf and P atoms respectively. The non existence of imaginary curves in the phonon spectra, calculated cohesive energy and elastic constants confirmed that <span><math><msub><mrow><mtext>HfP</mtext></mrow><mrow><mn>2</mn></mrow></msub></math></span> monolayer is dynamically, energetically and mechanically stable. In order to assess the thermoelectric performance of <span><math><msub><mrow><mtext>HfP</mtext></mrow><mrow><mn>2</mn></mrow></msub></math></span> monolayer, the electronic transport coefficients and lattice thermal conductivity has been calculated. It is found to possess a large Gruneisen parameter and low phonon group velocity, hence a low lattice thermal conductivity of 0.12 Wm<sup>−1</sup>K<sup>−1</sup> at room temperature. At room temperature, the n-type (p-type) monolayer is found to have a ZT value of 1.81 (1.34). The obtained results show that <span><math><msub><mrow><mtext>HfP</mtext></mrow><mrow><mn>2</mn></mrow></msub></math></span> monolayer could be used as a thermoelectric material.</div></div>\",\"PeriodicalId\":20116,\"journal\":{\"name\":\"Physica B-condensed Matter\",\"volume\":\"713 \",\"pages\":\"Article 417349\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica B-condensed Matter\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0921452625004661\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica B-condensed Matter","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921452625004661","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0

摘要

基于密度泛函理论的第一性原理计算研究了具有六边形晶格结构(晶格常数= 3.98 Å)的HfP2单层膜的性质。研究结果表明,它是一种能隙为1.26 eV的间接带隙半导体。投影态密度计算表明,HfP2单分子层的能带形成主要由Hf和p原子的d轨道和p轨道贡献。声子谱中不存在虚曲线,计算得到的内聚能和弹性常数证实了HfP2单层膜具有动态、能量和机械稳定性。为了评价HfP2单层材料的热电性能,计算了其电子输运系数和晶格导热系数。发现它具有较大的Gruneisen参数和较低的声子群速度,因此在室温下晶格导热系数为0.12 Wm−1K−1。在室温下,n型(p型)单层的ZT值为1.81(1.34)。实验结果表明,HfP2单层膜可以作为热电材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
HfP2 monolayer: A material with low lattice thermal conductivity and excellent thermoelectric performance
Density functional theory based first principle calculations are performed to investigate the properties of HfP2 monolayer having hexagonal lattice structure (lattice constant = 3.98 Å). The investigated results show that it is an indirect band gap semiconductor with the energy band gap of 1.26 eV. The projected density of states calculation demonstrates that the band formation in HfP2 monolayer is mainly contributed by the ‘d’ and ‘p’ orbital of Hf and P atoms respectively. The non existence of imaginary curves in the phonon spectra, calculated cohesive energy and elastic constants confirmed that HfP2 monolayer is dynamically, energetically and mechanically stable. In order to assess the thermoelectric performance of HfP2 monolayer, the electronic transport coefficients and lattice thermal conductivity has been calculated. It is found to possess a large Gruneisen parameter and low phonon group velocity, hence a low lattice thermal conductivity of 0.12 Wm−1K−1 at room temperature. At room temperature, the n-type (p-type) monolayer is found to have a ZT value of 1.81 (1.34). The obtained results show that HfP2 monolayer could be used as a thermoelectric material.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Physica B-condensed Matter
Physica B-condensed Matter 物理-物理:凝聚态物理
CiteScore
4.90
自引率
7.10%
发文量
703
审稿时长
44 days
期刊介绍: Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work. Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas: -Magnetism -Materials physics -Nanostructures and nanomaterials -Optics and optical materials -Quantum materials -Semiconductors -Strongly correlated systems -Superconductivity -Surfaces and interfaces
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信