Novel insights into microwave–induced magnetoresistance oscillations in GaAs, AlN, and InN materials of Pöschl–Teller quantum wells: A study based on the quantum kinetic equation

Abstract

We present a theoretical study of microwave-induced magnetoresistance oscillations in Pöschl–Teller quantum wells for GaAs and group III-nitride materials (AlN and InN). Employing the quantum kinetic equation approach, we derive analytical expressions for magnetoresistance, explicitly accounting for electron–acoustic phonon interactions at low temperatures. The results reveal strong dependence of the oscillations on magnetic field, temperature, structural parameters, microwave intensity, and photon energy. In the absence of microwave, conventional Shubnikov–de Haas oscillations are recovered, whose amplitude decreases with increasing temperature, in good agreement with previous theoretical and experimental results. Under terahertz microwave fields, pronounced beat patterns emerge in GaAs and InN, while the effect is negligible in AlN. Cyclotron resonance appears in all materials, accompanied by subsidiary maxima at half-integer frequency ratios. Additionally, the oscillation amplitude increases significantly with higher microwave intensity. These findings offer insights into the interplay between microwaves and magnetotransport in semiconductor heterostructures and guide quantum device applications.