Physica Status Solidi A-applications and Materials Science最新文献

{"title":"Understanding the Thermodynamics of Si and Ge Concentration Variation in SiGeSn Nanowires","authors":"Xiaoyang Zhang, Xianjun Zhu, Xueping Zhao, Hai Zhang, Wanghua Chen","doi":"10.1002/pssa.202400261","DOIUrl":"https://doi.org/10.1002/pssa.202400261","url":null,"abstract":"This work presents a comprehensive investigation into the synthesis, characterization, and thermal stability of SiGeSn nanowires (NWs) leveraging the vapor–liquid–solid growth mechanism. Utilizing plasma‐enhanced chemical vapor deposition with Sn as the catalyst and a combination of SiH<jats:sub>4</jats:sub> and GeH<jats:sub>4</jats:sub> as precursors, this research synthesizes tapered SiGeSn NWs of high crystalline quality. Utilizing high‐angle annular dark‐field scanning transmission electron microscopy and energy‐dispersive X‐ray spectroscopy, the study confirms the inhomogeneous distribution of Si, Ge, and Sn along the NWs’ growth axis. It is observed that the concentrations of Si and Ge are significantly influenced by the NW diameter, a phenomenon attributed to the Gibbs–Thomson effect. A straightforward mathematical model is developed. This model examines the impact of the catalyst's shape and the presence of Sn on the NW surface on the internal Sn concentration and its variation along the NWs’ growth axis. Additionally, the study investigates how thermal annealing at temperatures of 300 and 600 °C induces compositional changes within the NWs. These changes are markedly influenced by the heterogeneous distribution of Si, Ge, and Sn elements, leading to varying levels of compositional alterations in different segments of the NWs postannealing at distinct temperatures.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"9 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142224906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unlocking the Potential of Kesterite Solar Cells: Quantum Confinement Structures to Pave the Way for High‐Performance Photovoltaic Technologies","authors":"Smruti Ranjan Mohanty, Chandrasekar Palanisamy, Sudarsan Sahoo, Soumyaranjan Rouray","doi":"10.1002/pssa.202400341","DOIUrl":"https://doi.org/10.1002/pssa.202400341","url":null,"abstract":"Advancements in solar cell research are constantly pushing the boundaries of energy efficiency and sustainability. Kesterite materials have gained attention for their positive environmental impact and are being considered as promising candidate for renewable energy. These materials show potential for improving efficiency through creative structural modifications. Quantum well (QW) solar cells, utilizing kesterite materials, provide a combination of high efficiency, cost‐effectiveness, and environmental sustainability. These materials have a wide range of applications, from residential and commercial solar panels to portable and flexible devices, building‐integrated photovoltaics, off‐grid systems, and even space applications. This study investigates the improvement of solar cell efficiency by incorporating kesterite‐based nanostructures with quantum confinement technology. The key aspects of the analysis are measure performance of solar cell with variation in S/Se mole fraction of CZTSSe absorber layer. The special care is given to analyze behavior of QW structures with CZTSSe as the well material. Additionally, the study is expanded to an analysis of broad range of mole fraction variation in CZTSSe. Finally, the structure is optimized by adjusting the well width. Moreover, a remarkable efficiency of 31.33% is achieved with well width of 20 nm and the mole fraction of 0.8. This finding highlights the importance of customizing composition and nanostructure in solar cell design to improve efficiency and push forward renewable energy technologies.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"49 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hybrid Nanoarchitectronics of Tantalum Oxide‐Coated Gold Nanoparticles as Localized Surface Plasmon Resonance‐Based Sensors for Volatile Organic Compounds Detection","authors":"Kiratikarn Changpradub, Thotsaphon Threrujirapapong, Tossaporn Lertvanithphol, Ratthasart Amarit, Kruawan Wongpanya, Khwanchai Tantiwanichapan, Tuksadon Wutikhun, Annop Klamchuen, Hideki Nakajima, Mati Horprathum","doi":"10.1002/pssa.202400181","DOIUrl":"https://doi.org/10.1002/pssa.202400181","url":null,"abstract":"Herein, a localized surface plasmon resonance‐based sensor for volatile organic compounds (VOCs) detection is developed. The sensors are fabricated as a hybrid nanostructure of gold nanoparticles coated with a tantalum oxide (TaO) thin film on a glass slide substrate through magnetron sputtering and thermal solid‐state dewetting techniques. The thickness of the TaO film varies between 10 and 70 nm. The optical properties of samples are characterized by UV‐Vis‐NIR spectrophotometry, while their morphologies are confirmed via transmission electron microscopy. The results show the shift of the minimum optical transmittance related to the TaO thickness. Electrical field simulations are performed to predict the sensitivity of the prepared samples for VOCs detection. In addition, the sensors are tested with different VOCs, including formaldehyde, isopropanol, acetone, and methanol, which show good potential for practical applications.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"10 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142224905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermal Stability of (Mg/NbOx)82 Multilayer Nanostructure","authors":"Oleg Stognei, Andrey Smirnov, Alexander Sitnikov, Mikhail Volochaev","doi":"10.1002/pssa.202400244","DOIUrl":"https://doi.org/10.1002/pssa.202400244","url":null,"abstract":"Thermal stability of the multilayer (Mg/NbO<jats:sub><jats:italic>x</jats:italic></jats:sub>)<jats:sub>82</jats:sub> nanostructure and the effect of heat treatment on its electrical properties and phase composition depending on the bilayer thickness are studied. The studied (Mg/NbO<jats:sub><jats:italic>x</jats:italic></jats:sub>)<jats:sub>82</jats:sub> samples contain 82 bilayers whose thickness varies in the range from 2.2 to 6.2 nm. The NbO<jats:sub><jats:italic>x</jats:italic></jats:sub> layer thickness in the multilayers is the same (0.96 nm) in all samples, while the magnesium layers thickness is varied. It is established that the magnesium layers are either discrete (a set of nanosized particles) or continuous depending on their thickness. A metallothermic reaction occurs in (Mg/NbO<jats:sub><jats:italic>x</jats:italic></jats:sub>)<jats:sub>82</jats:sub> multilayer nanostructures at a temperature of 430 °C: niobium oxide decomposes and the released oxygen partly oxidizes the magnesium layers. That leads to the conductive magnesium metal layers breaking and to the sharp increase of the nanostructures’ resistance by more than two orders. Despite the metallothermic reaction, the layering of the (Mg/NbO<jats:sub><jats:italic>x</jats:italic></jats:sub>)<jats:sub>82</jats:sub> nanostructures as a whole and the presence of unoxidized magnesium inclusions remain even after heating up to 450 °C.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"13 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of the Structural, Optical, and Electrical Properties of ZnO/4‐Amino‐2‐Methylquinoline p–n Heterojunction by Spin‐Coating Method","authors":"Ramazan Demir","doi":"10.1002/pssa.202400507","DOIUrl":"https://doi.org/10.1002/pssa.202400507","url":null,"abstract":"A p–n heterojunction diode is fabricated using a p‐type 4‐amino‐2‐methylquinoline (C<jats:sub>10</jats:sub>H<jats:sub>10</jats:sub>N<jats:sub>2</jats:sub>) on an n‐type ZnO film and its structural, optical, and electrical properties are investigated. First, a ZnO thin film is prepared on an ITO substrate by spin coating. Subsequently, this ZnO film is coated with a C<jats:sub>10</jats:sub>H<jats:sub>10</jats:sub>N<jats:sub>2</jats:sub> film using the same method. X‐ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV–vis spectroscopy, and current–voltage measurements are carried out on the prepared films. According to the XRD result, sharp peaks at 320.081, 340.488, and 360.548 are observed in the hexagonal phase of ZnO. At these angles, grain sizes of 15.308, 15.179, and 13.715 nm are calculated. The absorption peaks of electronic transitions <jats:italic>π</jats:italic>→<jats:italic>π</jats:italic>*, <jats:italic>n</jats:italic>→<jats:italic>π</jats:italic>*, and <jats:italic>d</jats:italic>→<jats:italic>d</jats:italic>* in the ZnO/C<jats:sub>10</jats:sub>H<jats:sub>10</jats:sub>N<jats:sub>2</jats:sub> heterojunction film are observed. From the IV diagram, it can be seen that the heterojunction structure has a diode characteristic. From the IV data, the rectification factor is calculated to be 6.59 and its graph is drawn. With the Cheung method, ideality factor (<jats:italic>n</jats:italic>) = 2.87, series resistance (<jats:italic>R</jats:italic><jats:sub>S</jats:sub>) = 1 MΩ, and shunt resistance (<jats:italic>R</jats:italic><jats:sub>Sh</jats:sub>) = 5 kΩ are found.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"2 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mechanisms Affecting the Anomalous Responsivity of Back‐Illuminated p–i–n AlGaN Solar‐Blind Photodetectors","authors":"Zhaolan Sun, Jing Yang, Bing Liu, Zongshun Liu, Lihong Duan, Feng Liang, Fu Zheng, Xuefeng Liu, Degang Zhao","doi":"10.1002/pssa.202400417","DOIUrl":"https://doi.org/10.1002/pssa.202400417","url":null,"abstract":"A study on the bias‐dependent spectral responsivity of back‐illuminated p–i–n AlGaN UV photodetectors with different p‐AlGaN layer thicknesses is investigated. The results reveal an anomalous reduction in peak responsivity under zero bias when the p‐AlGaN layer thickness is relatively thin. Further investigations indicate that this anomaly can be attributed to the additional Schottky junction formed between the p‐AlGaN layer and metal. The quality and thickness design of the p‐AlGaN layer play a crucial role in enhancing the performance of back‐illuminated p–i–n AlGaN solar‐blind photodetectors.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"40 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synergic Effects of Chemical Reduction and Nitrogen Doping on the Structural and Electrical Properties of N‐ZnO/N‐rGO Nanostructures","authors":"Alisha Mary Manoj, Kavithanjali Madeshwaran, Mahalakshmi V, Kuraganti Vasu, Usha Rani M, Boopalan G, Leema Rose Viannie","doi":"10.1002/pssa.202400424","DOIUrl":"https://doi.org/10.1002/pssa.202400424","url":null,"abstract":"In this study, the synthesis, followed by a detailed evaluation of the structural, optical, and electrical properties of the N‐ZnO/N‐rGO nanocomposite prepared using a one‐step low‐temperature hydrothermal process, is reported. By employing N, N‐dimethylformamide (DMF) as the reducing agent and urea as the nitrogen precursor, simultaneous reduction and nitrogen doping are achieved in the nanocomposite. X‐ray diffraction (XRD), X‐ray photoelectron spectroscopy (XPS), and Raman measurements are used for the structural evaluation. The formation of composites is verified using the ZnC/ZnOC bonds in the XPS. The nitrogen doping in the nanocomposites varies from 0.8% to 1.8%. The major nitrogen moieties observed here include pyrrolic N, pyridinic N, and graphitic N. The electrical response is measured using current–voltage characteristics, and enhanced conductivity was observed in the sample with the highest percentage of pyrrolic N. This is attributed to the superior electron transport mechanism of pyrrolic N in the graphene structure. The current response is found to increase from 2 to 10 μA from ZnO/rGO to N‐ZnO/N‐rGO nanocomposite. The integration of N‐rGO support with extensively doped pyrrolic end groups for the N‐ZnO nanoparticles has been found to improve the conduction mechanism and is hence promising for many applications.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"2 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Microstructures and Mechanical Properties of TiC/Al–Si–Fe Composite with Ti–C Powder Mixture Prepared by Contact Reaction Method","authors":"Peixin Xiao, Peng Tang, Li Li","doi":"10.1002/pssa.202400533","DOIUrl":"https://doi.org/10.1002/pssa.202400533","url":null,"abstract":"This article investigates in situ TiC particle‐reinforcement Al–Si–Fe matrix composites prepared by the contact reaction method. The addition of Ti–C to alloys results in the formation of β‐Fe and significantly refined the eutectic Si phase. Meanwhile, the exothermic reaction of C accelerates generation velocity of TiC. The refinement of the Al<jats:sub>3</jats:sub>Ti phase is attributed to refinement of α‐Al, which expedites solidification speed and prevents the further diffusion of Si atom, resulting in the bulk of the primary Si phase is formed locally. The best refinement effect of microstructure is obtained when the mixing powder addition content is 1.0 wt% and the Al‐12Si‐1Fe alloy has maximum tensile strength. The appearance of TiC is regarded as underlying reason for the re‐enhancement of mechanical properties.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"135 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Model of Wafer Warpage for Trench Field‐Plate Power MOSFETs","authors":"Hiroaki Kato, Bozhou Cai, Jiuyang Yuan, Yoshiji Miyamura, Shin‐ichi Nishizawa, Wataru Saito","doi":"10.1002/pssa.202400264","DOIUrl":"https://doi.org/10.1002/pssa.202400264","url":null,"abstract":"A new wafer warpage model is proposed for the full process design of trench field‐plate (FP) power metal‐oxide‐semiconductor fileld‐effect transitors (MOSFETs) using large‐sized wafer. Trench FP power MOSFETs feature a deep trench and thick oxide at the wafer surface. Wafer warpage occurs due to the stress imbalance between the front and back sides of the wafer. This warpage leads to significant problems with transport errors in manufacturing equipment. This issue is expected to become even more crucial as lateral pitch narrowing is employed to reduce on‐resistance. In this study, two methods are compared to estimate the warpage of a 200 mm diameter Si‐wafer after trench etching and oxidation process. The mechanical stress generated by the oxidation process in several cell units is calculated using a 3D simulation. In the first approach, wafer warpage is converted from the displacement of the cell units. In the second approach, wafer warpage is estimated based on the surface film stress, which is calculated in the 3D simulation. The second approach shows good agreement with experimental results and is applicable to the 300 mm diameter Si process. This method yields more accurate measurements than the method using displacement.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"75 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced UV Photoresponse Performances of TiO2/Bi2Se3 Heterostructure‐Based Photoelectrochemical Photodetector","authors":"Jinhai Yang, Yanhong Ye, Ruiyang Yu, Han Yang, Hui Qiao, Zongyu Huang, Xiang Qi","doi":"10.1002/pssa.202400522","DOIUrl":"https://doi.org/10.1002/pssa.202400522","url":null,"abstract":"Bi<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> has a unique surface state and excellent electron transport performance, but because of its narrow band gap, Bi<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub>‐based photodetectors are difficult to achieve high response to ultraviolet (UV) light. In this paper, the TiO<jats:sub>2</jats:sub>/Bi<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> heterostructure was constructed by spin‐coating TiO<jats:sub>2</jats:sub> on Bi<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> film, and TiO<jats:sub>2</jats:sub>/Bi<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> heterostructure‐based photoelectrochemical (PEC) photodetector was constructed, and a series of measurements were carried out. The measure results showed that the photoresponse performance of TiO<jats:sub>2</jats:sub>/Bi<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> heterostructure‐based photodetector was improved in the visible region, and the performance in the UV was further improved. This is because the type ii band alignment between TiO<jats:sub>2</jats:sub> and Bi<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> is beneficial for the effective separation and transfer of photogenerated electron‐hole pairs, reducing recombination losses and enhancing the overall photoresponse. In addition, under the action of the built‐in electric field formed by the heterostructure, the photogenerated electrons and holes are easier to separate, which reduces the recombination probability of the photogenerated electron‐hole pair and improves the photoelectric conversion efficiency. In the UV, TiO<jats:sub>2</jats:sub>/Bi<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> heterostructure can make more efficient use of the light absorption characteristics of TiO<jats:sub>2</jats:sub> and absorb more photons, resulting in a larger photocurrent. These results indicate that TiO<jats:sub>2</jats:sub>/Bi<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> heterostructure‐based photodetector has great application potential in the UV.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"9 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}