Physica Status Solidi A-applications and Materials Science最新文献

{"title":"Effect of Acceptor Traps in GaN Buffer Layer on Source/Drain Contact Resistance in AlGaN/GaN High Electron Mobility Transistors","authors":"Vijaya Nandini Devi Addagalla, Prasannanjaneyulu Bhavana, Shreepad Karmalkar","doi":"10.1002/pssa.202300950","DOIUrl":"https://doi.org/10.1002/pssa.202300950","url":null,"abstract":"As‐grown GaN buffer layers have a significant electron concentration, which causes an increase in leakage current and a decrease in the breakdown voltage, <jats:italic>V</jats:italic><jats:sub>BR</jats:sub>, of GaN High Electron Mobility Transistors (HEMTs). To prevent this, deep acceptor traps of density, <jats:italic>N</jats:italic><jats:sub>AT</jats:sub>, are added to the GaN layer during growth. While a study on the effect of <jats:italic>N</jats:italic><jats:sub>AT</jats:sub> on <jats:italic>V</jats:italic><jats:sub>BR</jats:sub> is available in the literature, that on the effect of <jats:italic>N</jats:italic><jats:sub>AT</jats:sub> on contact resistance, <jats:italic>R</jats:italic><jats:sub>c</jats:sub>, of source/drain contacts is lacking. Herein, the following is established using technology computer‐aided design simulations calibrated with measured current–voltage characteristics of ungated AlGaN/GaN structures: 1) <jats:italic>R</jats:italic><jats:sub>c</jats:sub> increases significantly with <jats:italic>N</jats:italic><jats:sub>AT</jats:sub> and with the depth of the trap level from the conduction band. For trap level 2.5 eV below the conduction band, <jats:italic>R</jats:italic><jats:sub>c</jats:sub> doubles for an increase in <jats:italic>N</jats:italic><jats:sub>AT</jats:sub> from 1 × 10<jats:sup>16</jats:sup> to 5 × 10<jats:sup>17</jats:sup> cm<jats:sup>−3</jats:sup>. 2) The variation of <jats:italic>R</jats:italic><jats:sub>c</jats:sub> with temperature is non‐monotonic. Over a temperature range of 300–450 K, <jats:italic>R</jats:italic><jats:sub>c</jats:sub> is nearly constant with temperature for <jats:italic>N</jats:italic><jats:sub>AT</jats:sub> = 1 × 10<jats:sup>16</jats:sup> cm<jats:sup>−3</jats:sup> and decreases by 20% for <jats:italic>N</jats:italic><jats:sub>AT</jats:sub> = 5 × 10<jats:sup>17</jats:sup> cm<jats:sup>−3</jats:sup>, when traps are 2.5 eV below the conduction band. Also, the degradation of the transfer and output characteristics of GaN HEMTs due to a notable increase in <jats:italic>R</jats:italic><jats:sub>c</jats:sub> due to <jats:italic>N</jats:italic><jats:sub>AT</jats:sub> is investigated.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":null,"pages":null},"PeriodicalIF":2.0,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141518388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Near‐Infrared Thermometer Based on Stark Energy Levels of Yb3+ in Garnet","authors":"Qixuan Zhang, Jumpei Ueda, Ruilin Zheng, Setsuhisa Tanabe","doi":"10.1002/pssa.202400302","DOIUrl":"https://doi.org/10.1002/pssa.202400302","url":null,"abstract":"A Yb<jats:sup>3+</jats:sup>‐doped Gd<jats:sub>3</jats:sub>Al<jats:sub>2</jats:sub>Ga<jats:sub>3</jats:sub>O<jats:sub>12</jats:sub> garnet (GAGG) Boltzmann thermometer is prepared and studied in this work. Due to the Boltzmann distribution of the population of Stark sublevels of Yb<jats:sup>3+</jats:sup>, the photoluminescence peaks of Yb<jats:sup>3+</jats:sup> in the wavelength range of 950–1000 and 1000–1050 nm exhibit opposite temperature dependencies, which makes the luminescence intensity ratio (LIR) of two Yb<jats:sup>3+</jats:sup> peaks work as a luminescence thermometer with a relative sensitivity of 1.6% K<jats:sup>−1</jats:sup> at 200 K. It is worth nothing that this LIR value still follows the Arrhenius model at temperatures as low as 200 K. In these results, it is suggested that Yb<jats:sup>3+</jats:sup>‐doped GAGG thermometer can achieve high sensitivity for accurate temperature measurements. In addition, the accurate position of various Stark sublevels of Yb<jats:sup>3+</jats:sup> in GAGG is obtained for the first time. In this work, it is confirmed that the Yb<jats:sup>3+</jats:sup>‐doped GAGG thermometer exhibits potential applications in the fields of microelectronics and biology.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":null,"pages":null},"PeriodicalIF":2.0,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141531309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Oxygen Evolution Reaction Performance in Co–Fe Hydroxides through Boron Doping","authors":"Peijia Liu, Liang Shan, Zeyi Lu, Min Liu","doi":"10.1002/pssa.202400481","DOIUrl":"https://doi.org/10.1002/pssa.202400481","url":null,"abstract":"Among hydrogen production methods, water electrolysis stands out, but its efficiency is hampered by the substantial energy barrier of the oxygen evolution reaction (OER). To address this, incorporating electron‐deficient boron (B) into Co–Fe hydroxide (CoFeO<jats:sub><jats:italic>x</jats:italic></jats:sub>H<jats:sub><jats:italic>y</jats:italic></jats:sub>) promotes higher oxidation states of involved metals, greatly enhancing OER activity and charge transfer capabilities. Herein, the synthesis of a range of amorphous CoFeB nanoparticles with varying Fe to (Co+Fe) atomic ratios achieved through a simple chemical reduction method using CoFe‐Prussian blue analogs as precursors and employing Mössbauer spectroscopy to observe structural characteristics before and after transformation is reported. Among these nanoparticles, the CoFe<jats:sub>0.25</jats:sub>B variant, exhibiting favorable electrochemical properties, is chosen and subsequently subjected to hydrolysis to yield CoFe<jats:sub>0.25</jats:sub>BOH nanoparticles, serving as an active catalyst for OER. At a current density of 10 mA cm<jats:sup>−2</jats:sup>, the overpotentials for CoFe<jats:sub>0.25</jats:sub>O<jats:sub><jats:italic>x</jats:italic></jats:sub>H<jats:sub><jats:italic>y</jats:italic></jats:sub> and CoFe<jats:sub>0.25</jats:sub>BOH are 362 and 310 mV, respectively, with Tafel slopes decreasing from 393 to 93 mV dec<jats:sup>−1</jats:sup>. Furthermore, the <jats:italic>i</jats:italic>–<jats:italic>t</jats:italic> test reveals no significant loss of electrochemical performance within 24 h, substantiating the efficacy of enhancing the electrocatalytic performance of CoFeO<jats:sub><jats:italic>x</jats:italic></jats:sub>H<jats:sub><jats:italic>y</jats:italic></jats:sub> through the introduction of electron‐deficient elements. This research offers novel insights into the development of efficient and stable water electrolysis catalysts.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":null,"pages":null},"PeriodicalIF":2.0,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141518391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"GaInN‐Based Blue LED with a PEDOT/PSS Hole Transport Layer","authors":"Yuma Kato, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama","doi":"10.1002/pssa.202400090","DOIUrl":"https://doi.org/10.1002/pssa.202400090","url":null,"abstract":"In this study, a nitride‐based blue PEDOT‐LED is fabricated and a preliminary assessment of the device characteristics is done. To prevent detaching of the PEDOT/PSS layer from the LED substrate when immersing in water or developing solution, Ag was deposited on top of the PEDOT/PSS layer. Additionally, exfoliation is suppressed by reducing the developing time and protecting the wafer edge with a photoresist. Different etching methods for Ag and PEDOT/PSS are investigated. The Ar ion‐beam etching resulted in uniform and flat‐etched surfaces. Regarding the performance of the PEDOT‐LEDs, a high Mg‐doping concentration of 1.0 × 10<jats:sup>20</jats:sup> cm<jats:sup>−2</jats:sup> leads to a relatively low threshold current voltage in the V–I characteristics. However, for the PEDOT‐LED with <jats:italic>p</jats:italic>‐Al0.25Ga0.75 N EBL, a steep light output saturation is observed at high current density when analyzing the L–I characteristics.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":null,"pages":null},"PeriodicalIF":2.0,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141531308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimization of the Al Composition of the p‐AlGaN Electron Blocking Layer in GaInN/GaN Multiquantum‐Shell Nanowire LEDs","authors":"Yuta Hattori, Weifang Lu, Soma Inaba, Ayaka Shima, Shiori Ii, Mizuki Takahashi, Yuki Yamanaka, Kosei Kubota, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya","doi":"10.1002/pssa.202400116","DOIUrl":"https://doi.org/10.1002/pssa.202400116","url":null,"abstract":"The aim is to develop highly efficient GaInN/GaN nanowire (NW)‐based light‐emitting diodes (LEDs), which are composed of GaN NWs and multiquantum shell (MQS) active regions. These regions incorporate the polar c‐plane, nonpolar r‐plane, and semipolar m‐plane. A challenge with MQS‐LEDs is that the current path through the c‐plane MQS tends to dominate under low‐current injection conditions. Given that the MQS on the c‐plane is very defective, this injection current is mainly subjected to nonradiative recombination. Therefore, this study explores various optimizations of the p‐AlGaN electron blocking layers (EBLs) to minimize the current injection into the MQS in the c‐plane region. The samples are subsequently grown using a specific process. This involves n‐GaN NWs, GaInN/GaN‐based quantum shells, p‐AlGaN EBLs with different Al compositions, and p‐GaN shells. All these are developed by metal–organic vapor phase epitaxy on an n‐GaN template featuring a SiO<jats:sub>2</jats:sub> hole pattern. NW LEDs are fabricated and subsequently their device characteristics are investigated. Under low‐current injection, the sample with a lower Al composition exhibits higher luminescence intensity. However, this trend reverses when the injection current increases. The findings suggest that AI composition and thickness in the p‐AlGaN EBL significantly affect the output power and the emission wavelength.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":null,"pages":null},"PeriodicalIF":2.0,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141518305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High Bloch Surface Waves’ Biosensor Sensitivity Using All‐Dielectric Metasurface","authors":"Malika Chikhi, Louhadj Amina, Fouzia Boukabrine, Nadia Benseddik, Fouad Talbi","doi":"10.1002/pssa.202400259","DOIUrl":"https://doi.org/10.1002/pssa.202400259","url":null,"abstract":"A theoretical study of a one‐dimensional photonic crystal (1D‐PhC) [TiO<jats:sub>2</jats:sub>/MgF<jats:sub>2</jats:sub>]<jats:sub>2</jats:sub>/TiO<jats:sub>2</jats:sub>/GaAs terminated by a dielectric metasurface consisting of periodically arranged TiO<jats:sub>2</jats:sub> nanospheres for biosensing is proposed. The p polarized incident beam and the prism couplingtechnique are employed to excite Bloch surface waves considering a low biomolecular concentration sensing medium with refractive index changing from 1.33 to 1.34 RIU. The optical properties of the metasurface layer are calculated within the effective medium approximation. The findings reveal that integrating TiO<jats:sub>2</jats:sub> nanosphere metasurfaces as the upper layer of a photonic structure allows simultaneous control of biosensor sensitivity and the reflectance curve's full width at half maximum by judiciously tuning its optical properties, relying on the filling fraction (<jats:italic>f</jats:italic>) and the size () of the TiO<jats:sub>2</jats:sub> nanospheres. Moreover, The results show that the biosensor with the metasurface performs superior to the one without it.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":null,"pages":null},"PeriodicalIF":2.0,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141531310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrical Properties of N‐Polar GaN/AlGaN/AlN Grown via Metal‐Organic Vapor Phase Epitaxy","authors":"Aina Hiyama Zazuli, Taketo Kowaki, Minagi Miyamoto, Koki Hanasaku, Daisuke Inahara, Kai Fujii, Satoshi Kurai, Narihito Okada, Yoichi Yamada","doi":"10.1002/pssa.202400060","DOIUrl":"https://doi.org/10.1002/pssa.202400060","url":null,"abstract":"The metal‐organic vapor phase epitaxy (MOVPE) method faces several challenges when used for the growth of N‐polar GaN on foreign substrates, including the presence of a rough surface morphology characterized by step bunching or hexagonal hillocks. In this study, it is aimed to address these issues by establishing optimal growth conditions for the MOVPE method, enabling the growth of N‐polar GaN/Al<jats:sub>0.9</jats:sub>Ga<jats:sub>0.1</jats:sub>N/AlN heterostructures with a smooth surface morphology on a vicinal sapphire substrate. The formation of 2D electron gas (2DEG) in N‐polar GaN/AlGaN/AlN prepared using MOVPE is discussed. Additionally, in the study, the impact of growth conditions, such as temperature and V/III ratio, on the electrical properties of N‐polar GaN is investigated. In the results, it is revealed that growth at lower temperatures and a V/III ratio of 30 000 effectively suppresses 3D growth. Moreover, an increase in the V/III ratio correlates with a decrease in residual impurity concentrations (C and H); hence, electron mobility improves. Moreover, the N‐polar GaN/AlGaN/AlN field‐effect transistor, grown under optimized conditions, exhibits a higher maximum drain–source current (<jats:italic>I</jats:italic><jats:sub>Dmax</jats:sub>). In these results, possibilities are broadened for the high performance of N‐polar GaN channel high‐electron‐mobility transistors through MOVPE.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":null,"pages":null},"PeriodicalIF":2.0,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141496155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication of Flexible Copper Microelectrodes Using Laser Direct Writing for Sensing Applications","authors":"Jian Cheng, Xin Liu, Weichang Kong, Qingzheng Lei, Zhiyu Yu, Dun Liu","doi":"10.1002/pssa.202400342","DOIUrl":"https://doi.org/10.1002/pssa.202400342","url":null,"abstract":"The fabrication of flexible electronics has gained extensive attention due to the growing demand of flexible devices. Among various methods, laser direct writing technology has emerged as a promising approach due to its advantages of high processing accuracy and simplicity. This research focuses on the preparation of copper microelectrodes using laser‐induced reduction of CuO nanoparticles (Cu NPs) on polyethylene terephthalate films. First, the influence of various parameters on the conductivity of the copper microelectrodes is investigated. Second, flexible copper microelectrodes with a minimum resistivity of 62.29 μΩ cm and an adhesion grade of 4B level are successfully fabricated. Building upon these results, a capacitive pressure sensor is developed with optimal sensitivity of 3.99 Pa<jats:sup>−1</jats:sup>, good hysteresis of 3.99%, and response and recovery times of 1.2 and 1.3 s, respectively. Repeatability tests confirm the sensor's stability and fatigue resistance. This research provides valuable insights for the production of flexible sensors.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":null,"pages":null},"PeriodicalIF":2.0,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141496156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stabilizing Perovskite Solar Cells Based on 2,2′,7,7′‐Tetrakis(N,N‐DI‐P‐Methoxyphenylamine)‐9,9′‐Spirobifluoren with Perfluoropolyethers","authors":"Xiangying Xue, Weichuang Yang, Zhiqin Ying, Yuheng Zeng, Xi Yang, Jichun Ye","doi":"10.1002/pssa.202400390","DOIUrl":"https://doi.org/10.1002/pssa.202400390","url":null,"abstract":"Organic–inorganic hybrid perovskites in combination with the hole‐transport material (HTM) 2,2′,7,7′‐tetrakis(N,N‐di‐<jats:italic>p</jats:italic>‐methoxyphenylamine)‐9,9′‐spirobifluoren (spiro‐OMeTAD) yield impressive power conversion efficiency (PCE) in n–i–p perovskite solar cells (PSC). To ensure sufficient hole extraction from the perovskite absorber to the metal electrode, the lithium bis(trifluoromethanesulfonyl)imide (LiTFSI) doping is considered indispensable to promote spiro‐OMeTAD oxidization and obtain consequently enhanced conductivity. However, LiTFSI‐doped spiro‐OMeTAD usually leads to a reduced stability of PSCs because of the hygroscopic nature of LiTFSI, which further limits its potential commercialization. Herein, a hydrophobic material, namely perfluoropolyethers (PFPEs), is used as surface modifier of doped HTM to improve both efficiency and stability of PSCs. It is revealed that the introduction of PFPE increases the concentration of positive radicals, enhances charge‐carrier transport, and improves stability of PSCs under wetting stress. Moreover, the device based on PFPE achieves a champion PCE of 21.94%. In these findings, valuable insights are provided for the future commercialization of PSCs.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":null,"pages":null},"PeriodicalIF":2.0,"publicationDate":"2024-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141500605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nanostructured K‐Doped ZnO Thin Films: Synthesis and Investigations","authors":"Zohra Nazir Kayani, Ayesha Akram, Zainab Bashir, Salma Waseem, Saira Riaz, Shahzad Naseem","doi":"10.1002/pssa.202300982","DOIUrl":"https://doi.org/10.1002/pssa.202300982","url":null,"abstract":"The present research describes the optical, structural, dielectric, photocatalytic, and antibacterial characteristics of potassium‐doped ZnO thin films synthesized via sol–gel dip coating technique with a K doping concentration of (1, 2, 3, 4, 5) wt%. Thin films are annealed at optimized temperatures. K‐doped ZnO has a hexagonal wurtzite phase having a preferential orientation along the (101) plane. The size of the crystallite decreases as the potassium doping percentage rises. Optical analysis reveals that the bandgap decreases when the quantity of K doping in ZnO increases. Dielectric constant experiments show that when the K doping % is raised, AC conductivity of thin films rises as well. Thin film resistivity and Hall coefficient decrease with increasing K concentration, but conductivity, mobility, and carrier concentration rise. Gram‐positive and gram‐negative bacteria are both responsive to K‐doped ZnO. With such antibacterial properties, K‐doped ZnO can be used in biomedicine and to protect the environment. The methylene blue dye is effectively degraded by the photocatalyst K‐doped ZnO, making it useful for removing pollution from wastewater.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":null,"pages":null},"PeriodicalIF":2.0,"publicationDate":"2024-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141518394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}