Physica Status Solidi A-applications and Materials Science最新文献

{"title":"Low‐Temperature TiO2 Electron Transporting Layer for Planar Hole Transport Material‐Free Carbon Electrode‐CsFA‐Based Perovskite Solar Cells","authors":"Woraprom Passatorntaschakorn, Warunee Khampa, Wongsathon Musikpan, Athipong Ngamjarurojana, Atcharawon Gardchareon, Pipat Ruankham, Chawalit Bhoomanee, Duangmanee Wongratanaphisan","doi":"10.1002/pssa.202400470","DOIUrl":"https://doi.org/10.1002/pssa.202400470","url":null,"abstract":"Carbon electrode‐based perovskite solar cells (C‐PSCs) without a hole transport material (HTM) are cost‐effective and exhibit impressive long‐term stability. The electron transporting layer (ETL) plays a crucial role in planar CsFA‐based HTM‐free C‐PSCs, serving as both an electron transporter and a hole barrier. Herein, the role of low‐TiO<jats:sub>2</jats:sub> morphology and thickness on the performance of CsFA‐based HTM‐free C‐PSCs are addressed. Herein, the devices are fabricated with a simple structure fluorine‐doped tin oxide /TiO<jats:sub>2</jats:sub> nanoparticles (TiO<jats:sub>2</jats:sub> NPs)/Cs<jats:sub>0.17</jats:sub>FA<jats:sub>0.83</jats:sub>Pb(I<jats:sub>0.83</jats:sub>Br<jats:sub>0.17</jats:sub>)<jats:sub>3</jats:sub>/carbon, using low‐temperature processes (≤150 °C) under ambient air conditions. By optimizing TiO<jats:sub>2</jats:sub> NP layer thickness via spin‐coating speed adjustments, the ETL's coverage and compactness are improved, enhancing the perovskite film's quality, crystallinity, and grain size. An optimal TiO<jats:sub>2</jats:sub> ETL at 1500 rpm yields 10.80% efficiency and demonstrates exceptional stability, maintaining 80% efficiency over 120 days in an air environment without encapsulation. The enhancement in device performance is attributed to improved surface properties of the TiO<jats:sub>2</jats:sub> NPs ETL, effectively reducing interfacial charge recombination. This straightforwardly supports the development of sustainable, commercial‐ready CsFA HTM‐free C‐PSCs.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"18 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141575341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Physical Modeling of Threshold Voltage Instability in GaN High‐Electron‐Mobility Transistors","authors":"Ling‐Feng Mao","doi":"10.1002/pssa.202400479","DOIUrl":"https://doi.org/10.1002/pssa.202400479","url":null,"abstract":"The transient heat conduction equation for the 2D electron gas layer in GaN high‐electron‐mobility transistors is developed. The Schottky barrier height and the conduction band offset seen by electrons in the 2D electron gas layer will be reduced due to self‐heating in the 2D electron gas of GaN high‐electron‐mobility transistors via quantum coupling. Such a reduction will lead to a shift in the threshold voltage. To address this issue, an analytical physical model of self‐heating in the 2D electron gas of a GaN high‐electron‐mobility transistor via quantum coupling impacts on its threshold voltage instability is proposed. The proposed model forecasts that the threshold voltage can have an exponentially dependent relation with the reciprocal of the recovery time after the stress voltage is released, as well as dependencies on the square of the drift velocity, the gate voltage, and the surrounding temperature. The experimentally observed threshold voltage shifts of GaN high‐electron‐mobility transistors confirm such dependent relationships predicted by the proposed physical model. This article provides evidence that the combination of self‐heating in the 2D electron gas layer and quantum coupling may be a possible physical origin of the threshold voltage instability in GaN high‐electron‐mobility transistors.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"46 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141550986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Cr3+/Mo6+/W6+ Doping on Dipolar Relaxation and AC Conductivity in Li2O–Al2O3–SiO2 Glasses","authors":"Seetepalli Vijaya Krishna, Luka Pavić, Arijeta Bafti, Jana Pisk, Dhanisetti Bhadrarao, Yeti Dana Rao, Ayyagari Venkata Sekhar, Vandana Chitti Babu, Vandana Ravi Kumar, Nalluri Veeraiah","doi":"10.1002/pssa.202400243","DOIUrl":"https://doi.org/10.1002/pssa.202400243","url":null,"abstract":"In this investigation, results of dielectric features of Li<jats:sub>2</jats:sub>O–Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>–SiO<jats:sub>2</jats:sub> (LAS) glass doped with 3.0 mol% of Cr<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>, MoO<jats:sub>3</jats:sub>, and WO<jats:sub>3</jats:sub> are presented. The investigation spans broad regions of frequency (<jats:italic>ω</jats:italic>) 10<jats:sup>−2</jats:sup>–10<jats:sup>6</jats:sup> Hz and temperature (<jats:italic>T</jats:italic>) 20–240 °C. Initial characterization of the samples by means of optical absorption spectra reveals that Cr ions do persist in Cr<jats:sup>3+</jats:sup>oxidation state, whereas fractions of Mo and W ions do present in Mo<jats:sup>5+</jats:sup> and W<jats:sup>5+</jats:sup> states in addition to predominant presence Mo<jats:sup>6+</jats:sup> and W<jats:sup>6 +</jats:sup> ions, respectively. Infrared spectra suggest that Mo<jats:sup>5+</jats:sup> and W<jats:sup>5+</jats:sup> ions involve in modifying the network of the glass and induced structural disorder. Dielectric parameters and also <jats:italic>σ</jats:italic><jats:sub>ac</jats:sub> are observed to be the largest for 40Li<jats:sub>2</jats:sub>O–5Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>–52SiO<jats:sub>2</jats:sub>:3.0 MoO<jats:sub>3</jats:sub> (LASMo) glass followed by 40Li<jats:sub>2</jats:sub>O–5Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>–52SiO<jats:sub>2</jats:sub>:3.0 WO<jats:sub>3</jats:sub> (LASW) and 40Li<jats:sub>2</jats:sub>O–5Al<jats:sub>2</jats:sub>O<jats:sub>3–</jats:sub>52SiO<jats:sub>2</jats:sub>:3.0 Cr<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> (LASCr) glasses. Analysis of dipolar relaxation phenomena are carried out using Cole–Cole plots. Analysis of the results of <jats:italic>σ</jats:italic><jats:sub>ac</jats:sub> suggests that polaronic conduction due to electron transfer between Mo<jats:sup>5+</jats:sup> ↔ Mo<jats:sup>6+</jats:sup> and W<jats:sup>5+</jats:sup> ↔ W<jats:sup>6+</jats:sup> is prevailed in case of LASMo and LASW glasses and these glasses are predicted to be useful as cathodes, whereas in LASCr glass, ionic conductivity is dominant and is suitable for electrolytes in ionic batteries.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"39 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141550985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation of Multiwalled Carbon Nanotube/Si3N4/Polyaniline Ternary Composites and Their Microwave Absorption Properties","authors":"Xiaoli Ji, Ruochen Qiao, Zhihao Xu, Jian Liu, Haoze Yuan","doi":"10.1002/pssa.202400121","DOIUrl":"https://doi.org/10.1002/pssa.202400121","url":null,"abstract":"Herein, multiwalled carbon nanotube (MWCNT)/silicon nitride (Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub>)/polyaniline (PANI) ternary composites are prepared. The preparation method involves attaching carboxyl groups to acid‐modified MWCNT surfaces and amino groups to Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub> surfaces modified using a silane‐coupling agent. Then they are combined to binary composites using the solvent‐thermal method. Finally, the ternary composites are prepared by coating PANI on the surface of MWCNT/Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub> composites in situ polymerization. The morphology and structure of these composites are characterized through X‐ray diffraction, Fourier‐transform infrared spectroscopy, scanning electron microscopy, transmission electron microscopy, and X‐ray photoelectron spectroscopy. Results show that the reflection loss at 8.8 GHz reaches −42.57 dB when the feeding ratio of MWCNT:Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub>:PANI is 3:20:40 and the corresponding effective absorption bandwidth reaches 4.06 GHz when the thickness is 3.5 mm. A conductive network with effective electron leaps is formed among MWCNT, Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub>, and PANI, which increases the conductive loss of the composites. An abundant number of interfaces have formed in the composite materials and promoted dielectric loss. Multiple loss mechanisms and good impedance matching performance endow MWCNT/Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub>/PANI with excellent microwave absorption performance, and the incorporation of Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub> enables the composites to exhibit satisfactory high‐temperature resistance. Thus, these performances render the composites promising materials to address increasing electromagnetic pollution, particularly at high temperatures.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"25 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141550988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Strain‐Engineered Unified SiNx Deposition for Device Passivation and Capacitance Dielectric in GaN Monolithic Microwave Integrated Circuit","authors":"Jyoti Sahu, Bazila Parvez, Mahalaxmi Patil, Ranie S. J., Arpit Sahu, Subhajit Basak, Bhanu Upadhyay, Swaroop Ganguly, Dipankar Saha","doi":"10.1002/pssa.202400068","DOIUrl":"https://doi.org/10.1002/pssa.202400068","url":null,"abstract":"Silicon nitride (SiN<jats:sub><jats:italic>x</jats:italic></jats:sub>) is used for device passivation and capacitance dielectric in GaN monolithic microwave integrated circuits. However, this is a conflicting requirement as passivation requires SiN<jats:sub><jats:italic>x</jats:italic></jats:sub> to cause tensile strain, and capacitance dielectric primarily demands a high breakdown voltage and large dielectric constant for SiN<jats:sub><jats:italic>x</jats:italic></jats:sub>, leading to a damaged AlGaN surface during deposition. Two independent SiN<jats:sub><jats:italic>x</jats:italic></jats:sub> depositions under two different conditions (silicon‐ and nitrogen‐rich) are usually carried out to meet both requirements. Herein, a solution for a unified deposition through interfacial strain analysis on an AlGaN/GaN heterostructure grown on 6H‐SiC imposed by thin film silicon nitride (SiN<jats:sub><jats:italic>x</jats:italic></jats:sub>), deposited using inductively coupled plasma chemical vapor deposition system is proposed. The strain analysis is done using Raman spectroscopy. The surface morphology of the SiN<jats:sub><jats:italic>x</jats:italic></jats:sub> is studied using atomic force microscopy. The breakdown characteristics are ascertained from measurements on high electron mobility transistors and metal–insulator–metal capacitors.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"22 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141550987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"SiO2‐GaN Interface Improvement by Wet Cleaning and In Situ Annealing for GaN MOS Transistors","authors":"Mirjam Henn, Johannes Ziegler, Christian Huber, Humberto Rodriguez‐Alvarez, Nando Kaminski","doi":"10.1002/pssa.202400065","DOIUrl":"https://doi.org/10.1002/pssa.202400065","url":null,"abstract":"Herein, ex situ wet cleaning and in situ high‐temperature annealing of GaN surfaces prior to low pressure chemical vapor deposition (LPCVD) of the SiO<jats:sub>2</jats:sub> gate oxide, aiming at effective SiO<jats:sub>2</jats:sub>‐GaN interface engineering for channel improvement of metal–oxide semiconductor (MOS) transistors, are investigated. Additionally, the combination of in situ annealing and gate oxide deposition in an LPCVD tool provides the advantage of an industrially preferred batch process. A strong impact of the pretreatments on the interface state density and flatband voltage of the fabricated n‐type GaN MOS capacitors is demonstrated. Combined HF wet cleaning and NH annealing result in a low peak interface state density and a close to ideal <jats:italic>C–V</jats:italic> curve with a nearly ideal flatband voltage . Furthermore, the <jats:italic>I–V</jats:italic> characteristics exhibit a positive voltage shift of the current onset and substantially reduced <jats:italic>I‐V</jats:italic> hysteresis, i.e., negligible temporary charging. Physical root causes are assumed to be reduced contamination due to nondestructive yet efficient HF cleaning combined with subsequent high temperatures and the reduction of near‐interface, quasi‐permanent traps due to the saturation of dangling bonds by the annealing in hydrogen‐containing atmosphere.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"16 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141518392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Kinetics of Carrier Lifetime Degradation in High‐Temperature 1 MeV Electron‐Irradiated Cz n‐Si Associated with the Formation of Divacancy‐Oxygen Defects","authors":"Mykola Kras'ko, Andrii Kolosiuk, Vasyl Povarchuk, Vasyl Voitovych","doi":"10.1002/pssa.202400300","DOIUrl":"https://doi.org/10.1002/pssa.202400300","url":null,"abstract":"Kinetics of degradation of the nonequilibrium charge carrier lifetime (<jats:italic>τ</jats:italic>) in Czochralski‐grown (Cz) n‐Si irradiated with 1 MeV electrons at different temperatures in the range from 20 to 285 °C are experimentally and theoretically investigated. It is established that changes in <jats:italic>τ</jats:italic> are qualitatively and quantitatively determined by the temperature of electron irradiation. Analysis of experimental data using the Shockley‐Read‐Hall (SRH) theory shows that the formation of recombinationally active divacancy‐oxygen (V<jats:sub>2</jats:sub>O) and vacancy‐oxygen (VO) complexes is the main mechanism of <jats:italic>τ</jats:italic> degradation in this experiment.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"39 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141518393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Detection of Microcracks in Cz‐Si Wafer Manufacturing by Photoluminescence Imaging","authors":"Katja Mustonen, Jukka‐Pekka Lähteenmäki, Hele Savin","doi":"10.1002/pssa.202400295","DOIUrl":"https://doi.org/10.1002/pssa.202400295","url":null,"abstract":"Photoluminescence imaging (PLI) is a widely accepted, fast, and contactless method for detecting crystal defects in crystalline silicon solar cells and solar‐grade silicon wafers. However, it is less known by semiconductor wafer manufacturers despite the similarities between photovoltaic (PV) and semiconductor wafers. This study focuses on the detection of microcracks by PLI during high‐quality Czochralski silicon (Cz‐Si) wafer manufacturing. The results show that in case of low resistivity (&lt;25 mΩ cm) wafers, microcracks can be detected at any stage of the processing—even after diamond‐wire slicing. When resistivity increases, visibility of microcracks reduces in process steps that produce uneven surfaces. Nevertheless, they can still be detected after slurry‐wire slicing, lapping, alkaline etching, and polishing. According to the results, unlike resistivity, other material parameters such as dopant species, crystal orientation, and wafer thickness have no similar impact on visibility of microcracks in PLI. Furthermore, all wafers produce a decent photoluminescence (PL) signal without a need for separate sample preparation. Based on these results, general recommendations for the in‐line detection of microcracks for Cz‐Si wafer manufactures are provided. While this study focuses on microcracks, the results and discussion include broader perspectives on the defect characterization in Cz‐Si wafer manufacturing via PLI.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"36 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141518399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Piezoresistive Pressure Sensors with Composite Film of Indium Tin Oxide Nanocrystals Dispersed in Poly(vinyl alcohol)","authors":"Yijie Xia, Pengju Huang, Xinming Lin, Luchao Wu, Ke Li, Chenming Gao, Gaoyu Zhong","doi":"10.1002/pssa.202400334","DOIUrl":"https://doi.org/10.1002/pssa.202400334","url":null,"abstract":"Flexible pressure sensors have attracted much attention because of their application prospects in wearable devices, electronic skin, and health monitoring. However, it is still difficult to obtain pressure sensors with excellent performance simply and efficiently. Indium tin oxide (ITO) is a widely used transparent conductive material, and polyvinyl alcohol (PVA) is an elastic insulating material with the advantages of easy processing and stable mechanical properties. ITO nano‐crystalline particles are dispersed into PVA polymers to form an ITO nanocrystalline‐PVA composite film with good electrical conductivity as a piezorestoresistive material, fabricating a pressure sensor with excellent performance. The pressure sensor possesses superior sensitivity (641.15 kPa<jats:sup>−1</jats:sup>), wide detection range (0–80 kPa), fast response time (10.93 ms), and recovery time (8.05 ms), and excellent stability (more than 1500 cycles). The pressure sensor shows excellent performance in a variety of applications, such as pulse testing, speech recognition, and detection of various joint movements of the human body (such as knees, fingers, elbows, etc.). The sensor has application prospects in health monitoring and motion perception.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"197 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141518389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modified SnO2 Electron Transport Layer by One‐Step Doping with Histidine in Perovskite Solar Cells","authors":"Mengjie Dai, Wenchao Xing, Yinfeng Zhang, Lun Zhang, Pujun Niu, Ziying Wen, Shengquan Shan, Mei Lyu, Jun Zhu","doi":"10.1002/pssa.202400227","DOIUrl":"https://doi.org/10.1002/pssa.202400227","url":null,"abstract":"Tin dioxide (SnO<jats:sub>2</jats:sub>), one of the best electron transport layer materials for perovskite solar cells (PSCs), has high electrical conductivity and low photocatalytic activity. However, the defects in its inside and surface result in nonradiative recombination at the SnO<jats:sub>2</jats:sub>/perovskite interface. Complex and time‐consuming passivation methods are not conducive to the commercialization of PSCs, and simple passivation strategies should be used to improve the photovoltaic performance of the devices. Herein, a facile and efficient method is proposed to simultaneously passivate the inside and surface defects by adding histidine (HIS) to SnO<jats:sub>2</jats:sub> colloidal solution. This one‐step doping strategy also modulates carrier dynamics at the SnO<jats:sub>2</jats:sub>/perovskite interface. HIS reduces suspended hydroxyl groups, oxygen vacancies, and uncoordinated Sn<jats:sup>4+</jats:sup> defects on the surface of SnO<jats:sub>2</jats:sub>, as well as uncoordinated Pb<jats:sup>2+</jats:sup> and halogen vacancy defects at the buried interface of perovskite. Surprisingly, HIS can prevent perovskite from decomposition to form PbI<jats:sub>2</jats:sub>, which further decomposes to photoactive metallic Pb<jats:sup>0</jats:sup> and I, causing ion migration in PSC. As a result, the PSC efficiency has significantly improved 23.11% after HIS doping. The efficiency of unencapsulated device with HIS is 94% of the primary efficiency after storage in relative humidity = 70 ± 5% for 1000 h.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"151 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141518390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}