{"title":"氮化镓高电子迁移率晶体管阈值电压不稳定性的物理建模","authors":"Ling‐Feng Mao","doi":"10.1002/pssa.202400479","DOIUrl":null,"url":null,"abstract":"The transient heat conduction equation for the 2D electron gas layer in GaN high‐electron‐mobility transistors is developed. The Schottky barrier height and the conduction band offset seen by electrons in the 2D electron gas layer will be reduced due to self‐heating in the 2D electron gas of GaN high‐electron‐mobility transistors via quantum coupling. Such a reduction will lead to a shift in the threshold voltage. To address this issue, an analytical physical model of self‐heating in the 2D electron gas of a GaN high‐electron‐mobility transistor via quantum coupling impacts on its threshold voltage instability is proposed. The proposed model forecasts that the threshold voltage can have an exponentially dependent relation with the reciprocal of the recovery time after the stress voltage is released, as well as dependencies on the square of the drift velocity, the gate voltage, and the surrounding temperature. The experimentally observed threshold voltage shifts of GaN high‐electron‐mobility transistors confirm such dependent relationships predicted by the proposed physical model. This article provides evidence that the combination of self‐heating in the 2D electron gas layer and quantum coupling may be a possible physical origin of the threshold voltage instability in GaN high‐electron‐mobility transistors.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"46 1","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Physical Modeling of Threshold Voltage Instability in GaN High‐Electron‐Mobility Transistors\",\"authors\":\"Ling‐Feng Mao\",\"doi\":\"10.1002/pssa.202400479\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The transient heat conduction equation for the 2D electron gas layer in GaN high‐electron‐mobility transistors is developed. The Schottky barrier height and the conduction band offset seen by electrons in the 2D electron gas layer will be reduced due to self‐heating in the 2D electron gas of GaN high‐electron‐mobility transistors via quantum coupling. Such a reduction will lead to a shift in the threshold voltage. To address this issue, an analytical physical model of self‐heating in the 2D electron gas of a GaN high‐electron‐mobility transistor via quantum coupling impacts on its threshold voltage instability is proposed. The proposed model forecasts that the threshold voltage can have an exponentially dependent relation with the reciprocal of the recovery time after the stress voltage is released, as well as dependencies on the square of the drift velocity, the gate voltage, and the surrounding temperature. The experimentally observed threshold voltage shifts of GaN high‐electron‐mobility transistors confirm such dependent relationships predicted by the proposed physical model. This article provides evidence that the combination of self‐heating in the 2D electron gas layer and quantum coupling may be a possible physical origin of the threshold voltage instability in GaN high‐electron‐mobility transistors.\",\"PeriodicalId\":20074,\"journal\":{\"name\":\"Physica Status Solidi A-applications and Materials Science\",\"volume\":\"46 1\",\"pages\":\"\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-07-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica Status Solidi A-applications and Materials Science\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/pssa.202400479\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi A-applications and Materials Science","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/pssa.202400479","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
建立了氮化镓高电子迁移率晶体管中二维电子气层的瞬态热传导方程。由于 GaN 高电子迁移率晶体管中的二维电子气通过量子耦合产生自热,二维电子气层中电子看到的肖特基势垒高度和导带偏移会降低。这种降低将导致阈值电压的移动。为了解决这个问题,我们提出了 GaN 高电子迁移率晶体管二维电子气中通过量子耦合产生的自热对其阈值电压不稳定性影响的分析物理模型。该模型预测阈值电压与应力电压释放后恢复时间的倒数呈指数关系,并与漂移速度的平方、栅极电压和周围温度有关。实验观察到的 GaN 高电子迁移率晶体管的阈值电压偏移证实了所提出的物理模型预测的这种依赖关系。本文提供的证据表明,二维电子气层的自热和量子耦合可能是氮化镓高电子迁移率晶体管阈值电压不稳定性的物理根源。
Physical Modeling of Threshold Voltage Instability in GaN High‐Electron‐Mobility Transistors
The transient heat conduction equation for the 2D electron gas layer in GaN high‐electron‐mobility transistors is developed. The Schottky barrier height and the conduction band offset seen by electrons in the 2D electron gas layer will be reduced due to self‐heating in the 2D electron gas of GaN high‐electron‐mobility transistors via quantum coupling. Such a reduction will lead to a shift in the threshold voltage. To address this issue, an analytical physical model of self‐heating in the 2D electron gas of a GaN high‐electron‐mobility transistor via quantum coupling impacts on its threshold voltage instability is proposed. The proposed model forecasts that the threshold voltage can have an exponentially dependent relation with the reciprocal of the recovery time after the stress voltage is released, as well as dependencies on the square of the drift velocity, the gate voltage, and the surrounding temperature. The experimentally observed threshold voltage shifts of GaN high‐electron‐mobility transistors confirm such dependent relationships predicted by the proposed physical model. This article provides evidence that the combination of self‐heating in the 2D electron gas layer and quantum coupling may be a possible physical origin of the threshold voltage instability in GaN high‐electron‐mobility transistors.
期刊介绍:
The physica status solidi (pss) journal group is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Among the largest and most established international publications, the pss journals publish reviews, letters and original articles, as regular content as well as in special issues and topical sections.