Kinetics of Carrier Lifetime Degradation in High‐Temperature 1 MeV Electron‐Irradiated Cz n‐Si Associated with the Formation of Divacancy‐Oxygen Defects

IF 1.9 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Physica Status Solidi A-applications and Materials Science Pub Date : 2024-07-02 DOI:10.1002/pssa.202400300

Mykola Kras'ko, Andrii Kolosiuk, Vasyl Povarchuk, Vasyl Voitovych

引用次数: 0

Abstract

Kinetics of degradation of the nonequilibrium charge carrier lifetime (τ) in Czochralski‐grown (Cz) n‐Si irradiated with 1 MeV electrons at different temperatures in the range from 20 to 285 °C are experimentally and theoretically investigated. It is established that changes in τ are qualitatively and quantitatively determined by the temperature of electron irradiation. Analysis of experimental data using the Shockley‐Read‐Hall (SRH) theory shows that the formation of recombinationally active divacancy‐oxygen (V2O) and vacancy‐oxygen (VO) complexes is the main mechanism of τ degradation in this experiment.

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高温 1 MeV 电子辐照 Cz n-Si 中载流子寿命衰减的动力学与二价氧缺陷的形成有关

实验和理论研究了在 20 至 285 °C的不同温度下，用 1 MeV 电子辐照 Czochralski-grown（Cz）n-Si，非平衡电荷载流子寿命（τ）衰减的动力学。结果表明，电子辐照温度从定性和定量两个方面决定了 τ 的变化。利用肖克利-雷德-霍尔（SRH）理论对实验数据进行的分析表明，在该实验中，形成具有重组活性的空位-氧（V2O）和空位-氧（VO）复合物是 τ 降解的主要机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Physica Status Solidi A-applications and Materials Science 工程技术-材料科学：综合

CiteScore

3.70

自引率

5.00%

发文量

393

审稿时长

2 months

期刊介绍： The physica status solidi (pss) journal group is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Among the largest and most established international publications, the pss journals publish reviews, letters and original articles, as regular content as well as in special issues and topical sections.