Physica Status Solidi A-applications and Materials Science最新文献_第4页

Effect of the AlGaN Multi‐Quantum Well Growth Temperature on the Efficiency of Metal‐Organic Vapor‐Phase Epitaxy‐Grown Far‐Ultraviolet‐C Light‐Emitting Diodes Emitting near 235 nm 氮化铝镓多量子阱生长温度对金属有机气相外延生长的远紫外-C 发光二极管在 235 纳米附近发光效率的影响

IF 2 4区材料科学

Physica Status Solidi A-applications and Materials Science Pub Date : 2024-08-13 DOI: 10.1002/pssa.202400392

Marcel Schilling, Norman Susilo, Anton Muhin, Giulia Cardinali, Jan Ruschel, Hyun Kyong Cho, Jens Rass, Jakob Höpfner, Tim Wernicke, Sven Einfeldt, Michael Kneissl

{"title":"Effect of the AlGaN Multi‐Quantum Well Growth Temperature on the Efficiency of Metal‐Organic Vapor‐Phase Epitaxy‐Grown Far‐Ultraviolet‐C Light‐Emitting Diodes Emitting near 235 nm","authors":"Marcel Schilling, Norman Susilo, Anton Muhin, Giulia Cardinali, Jan Ruschel, Hyun Kyong Cho, Jens Rass, Jakob Höpfner, Tim Wernicke, Sven Einfeldt, Michael Kneissl","doi":"10.1002/pssa.202400392","DOIUrl":"https://doi.org/10.1002/pssa.202400392","url":null,"abstract":"The effect of the active region growth temperature (TMQW) on the external quantum efficiency (EQE) of AlGaN‐based far‐ultraviolet‐C light‐emitting diodes (far‐UVC LEDs) emitting near 235 nm is investigated. AlGaN multi‐quantum well (MQW) active regions are grown at temperatures between 850 and 1100 °C by metal‐organic vapor‐phase epitaxy, while special care is taken to keep aluminum mole fractions and thicknesses constant for all MQWs. Temperature‐ and excitation‐power‐dependent photoluminescence spectroscopy reveal a more than tenfold increase of the radiative recombination efficiency (RRE) when the growth temperature increases from 850 to 1020–1060 °C. The output powers for mounted far‐UVC LEDs at 0.2 A increase from 0.5 mW for TMQW of 900 °C to 2.5 mW for TMQW of 1020 °C, corresponding to an increase in EQE from 0.04% to 0.23% at 0.2 A. However, lifetime measurements reveal a reduction of the L70 lifetime from 400 to 1 h when TMQW increases from 900 to 1060 °C. In this investigation, it is shown that optimizing the growth conditions provides a promising approach to further increase the RRE and EQE and lifetime of far‐UVC LEDs.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"10 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Geometric Variability‐Aware Thermal Characteristics Modeling of Nanoscale Silicon Gate‐All‐around Nanowire Transistor 意识到几何变异性的纳米级硅栅极全方位纳米线晶体管热特性建模

IF 2 4区材料科学

Physica Status Solidi A-applications and Materials Science Pub Date : 2024-08-13 DOI: 10.1002/pssa.202400435

Xiaoyue Feng, Kun Luo, Guohui Zhan, Lijun Xu, Qinzhi Xu, Zhenhua Wu

{"title":"Geometric Variability‐Aware Thermal Characteristics Modeling of Nanoscale Silicon Gate‐All‐around Nanowire Transistor","authors":"Xiaoyue Feng, Kun Luo, Guohui Zhan, Lijun Xu, Qinzhi Xu, Zhenhua Wu","doi":"10.1002/pssa.202400435","DOIUrl":"https://doi.org/10.1002/pssa.202400435","url":null,"abstract":"Thermal management becomes increasingly important in silicon gate‐all‐around (GAA) field‐effect transistor (FETs) for 3 nm technology node and beyond. The channel thermal conductivity significantly differs from bulk silicon. Precise determination of thermal conductivity is crucial for device evaluation and optimization. This study investigates the thermal conductivity of silicon nanowires, examining the complex interplay between size and channel orientation. The conventional nonequilibrium molecular dynamics (NEMD) method is used with the standard Stillinger–Weber potential at the atomic scale. The results indicate that the thermal conductivity of silicon nanowires along the [100] direction increases monotonically with both length (L) and cross‐sectional side length (D). Conversely, the [110] direction exhibits nonmonotonic variation in thermal conductivity with D, due to increased acoustic–optic phonon scattering. For GAA FET devices with a silicon nanowire channel of L = 20 nm and D = 5 nm, the NEMD calculations yield thermal conductivities of 10.8 W m·K−1 for the [100] direction and 25.3 W m·K−1 for the [110] direction. Subsequently, the self‐heating effect (SHE) in silicon nanowire GAA FETs by technology computer‐aided design with the modified channel conductivity is analyzed. The results suggest that silicon nanowires with the [110] transport direction are more suitable for device design.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"82 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Major and Trace Element Composition Differences Revealed in Porcine Intestine by Dynamic Analysis and MeV Ion Microscopy 通过动态分析和 MeV 离子显微镜揭示猪肠中主要元素和微量元素的组成差异

IF 2 4区材料科学

Physica Status Solidi A-applications and Materials Science Pub Date : 2024-08-13 DOI: 10.1002/pssa.202400161

Harry J. Whitlow, Gyula Nagy, Andrej Kuznetsov, Robert J.W. Frost, Alexander Azarov, Karen M. Smith, Sumittra Amphalop, Wimonrut Insuan, Sakulchit Wichianchot, Min‐Quin Ren, Thomas Osipowicz, Chris G. Ryan, Wanwisa Sudprasert, Francois Villinger

{"title":"Major and Trace Element Composition Differences Revealed in Porcine Intestine by Dynamic Analysis and MeV Ion Microscopy","authors":"Harry J. Whitlow, Gyula Nagy, Andrej Kuznetsov, Robert J.W. Frost, Alexander Azarov, Karen M. Smith, Sumittra Amphalop, Wimonrut Insuan, Sakulchit Wichianchot, Min‐Quin Ren, Thomas Osipowicz, Chris G. Ryan, Wanwisa Sudprasert, Francois Villinger","doi":"10.1002/pssa.202400161","DOIUrl":"https://doi.org/10.1002/pssa.202400161","url":null,"abstract":"Physiologically relevant concentrations in biological tissue, in the in vivo, state are of the order of μmol L−1 and mmol L−1. Up to the present, mapping the major elements in the matrix and its thickness has been neglected, despite their importance for quantification of lesser and trace element concentrations. Ryan and Jamieson's dynamic analysis, statistical spectral decomposition approach, is developed to quantitatively measure ex vivo tissue sections cut using a cryomicrotome. This mitigates the problem that physical analysis methods require a vacuum environment. This approach is used to quantitatively image the major matrix elements H, C, N, and O as well as trace maps of Ca, Fe, and Zn in a tissue section of porcine intestine. This sample is selected as it exhibits a complex morphology with multiple tissue compartments (such as muscle and mucosa, as well as void areas from blood vessels, lymph ducts, sinuses crypts, and villi. In the results, it is demonstrated that different tissue types can have a different matrix composition and thickness. Using this information, quantitative maps and elemental molarities for the lesser and trace elements Ca, Fe, and Zn are obtained.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"22 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Donor Defect Induced Ferromagnetism in Nb‐Doped ZnO Thin Films Grown by RF Magnetron Sputtering 射频磁控溅射法生长的掺铌氧化锌薄膜中捐献者缺陷诱导的铁磁性

IF 2 4区材料科学

Physica Status Solidi A-applications and Materials Science Pub Date : 2024-08-13 DOI: 10.1002/pssa.202400219

Arya Sukumaran, Nammalvar Gopalakrishnan

{"title":"Donor Defect Induced Ferromagnetism in Nb‐Doped ZnO Thin Films Grown by RF Magnetron Sputtering","authors":"Arya Sukumaran, Nammalvar Gopalakrishnan","doi":"10.1002/pssa.202400219","DOIUrl":"https://doi.org/10.1002/pssa.202400219","url":null,"abstract":"The effect of Nb doping concentration (0, 1, 2, and 4 at. %) on donor defect‐induced ferromagnetism in ZnO thin films is investigated. The films are deposited on Si(111) substrates utilizing the radio frequency magnetron sputtering. X‐ray diffraction pattern unveils that the films show a pronounced orientation along the (002) direction. The relative intensities of defect‐related bands with that of the ultraviolet band from photoluminescence (PL) spectra show that 2 at. % Nb doping results in a greater number of donor defects (Zni+ and VO+) in the ZnO lattice. The parameters extracted from the electron paramagnetic resonance spectra follow a similar trend. The results from vibrating sample magnetometer measurement indicate that pure ZnO displays diamagnetic nature, whereas Nb‐doped ZnO exhibits a ferromagnetic nature. The saturation magnetization value is found highest for 2 at. % Nb doping, which correlates with the presence of a greater number of donor defects, as supported by the PL and electron paramagnetic resonance results. Images obtained from atomic force microscopy show that the surface roughness of the ZnO thin film reduces upon Nb doping. X‐ray photoelectron spectroscopy validates that Nb is doped in 2 at. % Nb‐doped ZnO thin film with Nb oxidation state of +5.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"6 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Temperature‐Induced Transformation of the Atomic Configuration of the BO2* Defect in Boron‐Doped Czochralski Si 掺硼的佐赫拉尔斯基硅片中 BO2* 缺陷原子构型的温度诱导转变

IF 2 4区材料科学

Physica Status Solidi A-applications and Materials Science Pub Date : 2024-08-13 DOI: 10.1002/pssa.202400484

Lyudmyla Khirunenko, Mykhailo Sosnin, Andrii Duvanskii, Nikolay Abrosimov

{"title":"Temperature‐Induced Transformation of the Atomic Configuration of the BO2* Defect in Boron‐Doped Czochralski Si","authors":"Lyudmyla Khirunenko, Mykhailo Sosnin, Andrii Duvanskii, Nikolay Abrosimov","doi":"10.1002/pssa.202400484","DOIUrl":"https://doi.org/10.1002/pssa.202400484","url":null,"abstract":"In this study, the new data concerning the electronic and vibrational properties of the BsO2i* defect in Czochralski‐grown boron‐doped silicon are reported. In silicon subjected to treatment at elevated temperatures, a new boron‐related defect is detected. An additional intracenter electronic transition for boron associated with the revealed defect is observed. The defect is identified as BsO2i due to the linear dependence of its formation efficiency on the boron content and the quadratic dependence on the oxygen concentration. The revealed complex is formed synchronously with the annealing of the previously identified BsO2i* defect. The detected complex is formed as a result of temperature transformation of the atomic configuration of the BsO2i* defect. The transformation occurs with activation energy of 2.59 eV. The local vibrational modes associated with both configurations of the BsO2i* complex are identified. The results of the study suggest that the BsO2i* defect in both configurations exists in a wide temperature interval, impacts the optical and electronic properties of the material, and must be taken into consideration when developing Si:B‐based devices.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"6 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Microwave Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistor on Semi‐Insulating Mn‐Doped GaN Substrate 半绝缘掺锰氮化镓衬底上的氮化镓/氮化镓高电子迁移率晶体管的微波功率性能

IF 2 4区材料科学

Physica Status Solidi A-applications and Materials Science Pub Date : 2024-08-13 DOI: 10.1002/pssa.202400057

Tomoharu Sugino, Kenji Osaki, Kentaro Nonaka, Tomohiko Sugiyama, Yoshitaka Kuraoka, Akio Wakejima

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Fabrication of Plasmonic Microcubes by Laser Ablation of Au‐Nanoparticles‐Loaded Acrylate 通过激光烧蚀涂覆金纳米粒子的丙烯酸酯制作等离子微立方体

IF 2 4区材料科学

Physica Status Solidi A-applications and Materials Science Pub Date : 2024-08-05 DOI: 10.1002/pssa.202470029

Pierre Lorenz, Joachim Zajadacz, Andriy Lotnyk, Jürgen W. Gerlach, Martin Ehrhardt, Robert Kirchner, Klaus Zimmer

引用次数: 0

Milliseconds Thermal Processing of Boron Hyperdoped Germanium 毫秒级热处理超掺硼锗

IF 2 4区材料科学

Physica Status Solidi A-applications and Materials Science Pub Date : 2024-08-05 DOI: 10.1002/pssa.202400260

Yu Cheng, FangChao Long, Oliver Steuer, Nikol Lambeva, Florian Bärwolf, Jens Zscharschuch, Artur Erbe, Manfred Helm, Shengqiang Zhou, Slawomir Prucnal

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Making Light Matter 让光变得重要

IF 2 4区材料科学

Physica Status Solidi A-applications and Materials Science Pub Date : 2024-08-05 DOI: 10.1002/pssa.202400528

Jörn Bonse, Irina Alexandra Paun, Johannes Heitz, Razvan Stoian

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High‐Performance Electrode for Energy Storage Developed Using Single‐Source Precursor‐Driven Bas:Cos:La2S3 Trichalcogenide Semiconductor 利用单源前驱体驱动的 Bas:Cos:La2S3 三卤化物半导体开发的高性能储能电极

IF 2 4区材料科学

Physica Status Solidi A-applications and Materials Science Pub Date : 2024-08-02 DOI: 10.1002/pssa.202400217

Shaan Bibi Jaffri, Khuram Shahzad Ahmad, Niharika Maley, Ram K. Gupta, Ghulam Abbas Ashraf, Essam A. Al‐Ammar

{"title":"High‐Performance Electrode for Energy Storage Developed Using Single‐Source Precursor‐Driven Bas:Cos:La2S3 Trichalcogenide Semiconductor","authors":"Shaan Bibi Jaffri, Khuram Shahzad Ahmad, Niharika Maley, Ram K. Gupta, Ghulam Abbas Ashraf, Essam A. Al‐Ammar","doi":"10.1002/pssa.202400217","DOIUrl":"https://doi.org/10.1002/pssa.202400217","url":null,"abstract":"Using single‐source precursor route, this work reports the synthesis of the novel chalcogenide heterosystem, i.e., BaS:CoS:La2S3 trichalcogenide heterosystem. With the narrowed band gap energy, BaS:CoS:La2S3 expresses excellent photonic response with 3.47 eV of tailored band gap resulting from chemical synergism. This chalcogenide is marked by superior crystallinity and possessed an average crystallite size of 18.29 nm. Morphologically, BaS:CoS:La2S3 exists in the form of the roughly spherical grains arranged in the irregular manner. The developed chalcogenide is assessed for charge storage by fabricating the electrode using a nickel form as a support. In a 0.1 m KOH background electrolyte, the BaS:CoS:La2S3 adorns electrode excelled in achieving a specific capacitance of 967.24 F g−1. In addition, this trichalcogenide expresses the specific power density of 1659 W kg−1. Fabricated electrode retains original capacitance after different cycles. Regarding electrode–electrolyte interactions, the fabricated electrode shows minimal resistance, with an equivalent series resistance (Rs) of 1.42 Ω as indicated by impedance studies. Additional circuit elements, including CPE (Yo = 2.17 × 10−04, n = 0.71) and Rct (6.97 Ω cm−2), are obtained after circuit fitting for the BaS:CoS:La2S3 trichalcogenide decorated electrode. Exhibiting stable behavior for 43 h, the synthesized material demonstrates profound durability and functionality.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"24 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141880865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0