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2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)最新文献

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Integration technologies for an 8×8 InP-based monolithic tunable optical router with 40GB/S line rate per port 基于8×8 inp的单片可调光路由器的集成技术，每个端口40GB/S线路速率
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI: 10.1109/ICIPRM.2010.5515982
S. Nicholes, M. Mašanović, Biljana Jevremović, E. Lively, L. Coldren, D. Blumenthal
{"title":"Integration technologies for an 8×8 InP-based monolithic tunable optical router with 40GB/S line rate per port","authors":"S. Nicholes, M. Mašanović, Biljana Jevremović, E. Lively, L. Coldren, D. Blumenthal","doi":"10.1109/ICIPRM.2010.5515982","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5515982","url":null,"abstract":"Large-scale photonic integration depends on robust epitaxial design and fabrication techniques. This paper reviews the integration strategy we developed to demonstrate an 8×8 InP-based monolithic tunable optical router capable of 40 Gbps operation per port.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131008213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Scaling of InGaAs MOSFETs into deep-submicron regime (invited) InGaAs mosfet在深亚微米区的缩放(邀)
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI: 10.1109/ICIPRM.2010.5515918
Y. Q. Wu, J. Gu, P. Ye
{"title":"Scaling of InGaAs MOSFETs into deep-submicron regime (invited)","authors":"Y. Q. Wu, J. Gu, P. Ye","doi":"10.1109/ICIPRM.2010.5515918","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5515918","url":null,"abstract":"We have demonstrated high-performance deep-submicron inversion-mode InGaAs MOSFETs with gate lengths down to 150 nm with record Gm exceeding 1.1 mS/µm. Oxide thickness scaling is performed to improve the on-state/off-state performance and Gm is further improved to 1.3 mS/µm. HBr pre-cleaning, retro-grade structure and halo-implantation processes are first time introduced into III-V MOSFETs to steadily improve high-k/InGaAs interface quality and on-state/off-state performance of the devices. We have also demonstrated the first well-behaved inversion-mode InGaAs FinFET with ALD Al2O3 as gate dielectric using novel damage-free etching techniques. Detailed analysis of SS, DIBL and VT roll-off are carried out on FinFETs with Lch down to 100 nm and WFin down to 40 nm. The short-channel effect (SCE) of planar InGaAs MOSFETs is greatly improved by the 3D structure design. The result confirms that the newly developed dry/wet etching process produces damage-free InGaAs sidewalls and the high-k/3D InGaAs interface is comparable to the 2D case. Finally, ultra-shallow doping for VT adjustment in deep submicron InGaAs MOSFETs using sulfur monolayers is demonstrated. This brings new potential solution to ultra-shallow junction formation for the further scaling of III-V MOSFETs.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128292426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel InP-based optical 45° hybrid for demodulating 8-ary DPSK signal 新型基于inp的45°光混合解调8位DPSK信号
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI: 10.1109/ICIPRM.2010.5516297
Seok-Hwan Jeong, K. Morito
{"title":"Novel InP-based optical 45° hybrid for demodulating 8-ary DPSK signal","authors":"Seok-Hwan Jeong, K. Morito","doi":"10.1109/ICIPRM.2010.5516297","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516297","url":null,"abstract":"We proposed a novel optical 45° hybrid using a 2×8 multimode interference (MMI) coupler, three phase shifters and three 2×2 MMI couplers. Since optical demodulation is achieved by using the proposed 45° hybrid with only one delayed interferometer, the 8-ary differential phase shift keyed (DPSK) demodulator has much smaller device dimensions than conventional 8-ary DPSK demodulators consisting of four pairs of delayed interferometers and optical couplers. We fabricated the proposed 45° hybrid with an InP-based deep-ridge waveguide structure, and experimentally demonstrated the octagonal phase response with a relative phase deviation of <±5° over 32-nm-wide spectral range.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122926008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Intersubband absorption generation through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells towards monolithic integration of intersubband-transition-based all-optical switches 在未掺杂InGaAs/AlAsSb耦合双量子阱中通过硅离子注入产生子带间吸收，实现基于子带间跃迁的全光开关的单片集成
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI: 10.1109/ICIPRM.2010.5515994
G. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, H. Ishikawa
{"title":"Intersubband absorption generation through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells towards monolithic integration of intersubband-transition-based all-optical switches","authors":"G. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, H. Ishikawa","doi":"10.1109/ICIPRM.2010.5515994","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5515994","url":null,"abstract":"We demonstrated the intersubband absorption through silicon ion implantation and subsequent rapid thermal annealing in undoped InGaAs/AlAsSb coupled double quantum wells. The effective temperature region of carrier activation for the implanted silicon ions is about 470~600 °C. For the sample with a silicon implantation dose of 1e14 cm−2, we obtained an actual carrier density of ~ 7.5e13 cm−2 (~75% activation efficiency) when it was annealed at 600 °C for 1 min. Simultaneously, a ~160-nm blueshift in interband absorption edge was observed, indicating quantum well intermixing (QWI). QWI and its non-uniformity were confirmed using SIMS and TEM measurements. This technique to generate intersubband absorption opens a route to fabricate monolithically integrated all-optical switches based on intersubband-transition induced cross-phase modulation.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123875892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical generation of microwave carrier with high spectral purity using integrated dual wavelength semiconductor laser diode 利用集成双波长半导体激光二极管产生高光谱纯度的微波载流子
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI: 10.1109/ICIPRM.2010.5516116
Changzheng Sun, Jin Huang, B. Xiong, Yi Luo
{"title":"Optical generation of microwave carrier with high spectral purity using integrated dual wavelength semiconductor laser diode","authors":"Changzheng Sun, Jin Huang, B. Xiong, Yi Luo","doi":"10.1109/ICIPRM.2010.5516116","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516116","url":null,"abstract":"The design and fabrication of an integrated dual wavelength laser diode is reported for optical generation of microwave signal. Microwave carrier with high spectral purity has been generated based on modulation sideband injection locking.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"413 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124412366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
DC and RF cryogenic behaviour of InAs/AlSb HEMTs InAs/AlSb hemt的直流和射频低温行为
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI: 10.1109/ICIPRM.2010.5516313
G. Moschetti, P. Nilsson, L. Desplanque, X. Wallart, H. Rodilla, J. Mateos, J. Grahn
{"title":"DC and RF cryogenic behaviour of InAs/AlSb HEMTs","authors":"G. Moschetti, P. Nilsson, L. Desplanque, X. Wallart, H. Rodilla, J. Mateos, J. Grahn","doi":"10.1109/ICIPRM.2010.5516313","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516313","url":null,"abstract":"DC and RF properties are reported for InAs/AlSb HEMTs operating under cryogenic conditions (6 K) for a drain source bias up to 0.3 V. Compared to room temperature (300 K), a large improvement in device properties was observed: lower Ron, lower gds, a more distinct knee in the Ids (Vds) characteristics, increased fT and a reduction of the gate leakage current of more than two orders of magnitude. This makes InAs/AlSb HEMT technology of large interest in cryogenic low-noise amplifier designs with high constraints on power dissipation.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129261783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Sub-50NM InGaAs/InAlAs/InP HEMT for sub-millimeter wave power amplifier applications 用于亚毫米波功率放大器的50nm以下InGaAs/InAlAs/InP HEMT
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI: 10.1109/ICIPRM.2010.5516192
X. Mei, V. Radisic, W. Deal, W. Yoshida, J. Lee, L. Dang, P. Liu, W. Liu, M. Lange, J. Zhou, J. Uyeda, K. Leong, R. Lai
{"title":"Sub-50NM InGaAs/InAlAs/InP HEMT for sub-millimeter wave power amplifier applications","authors":"X. Mei, V. Radisic, W. Deal, W. Yoshida, J. Lee, L. Dang, P. Liu, W. Liu, M. Lange, J. Zhou, J. Uyeda, K. Leong, R. Lai","doi":"10.1109/ICIPRM.2010.5516192","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516192","url":null,"abstract":"An InGaAs/InAlAs/InP HEMT with sub-50nm EBL gate has been developed for sub-millimeter wave (SMMW) power amplifier (PA) applications. In this paper, we report the device performance including high drain current, high gain, high breakdown voltage and scalability to large gate periphery, which are essential for achieving high output power at these frequencies. Excellent yield, process uniformity and repeatability are also demonstrated, which is critical for power amplifiers employing large number of devices and gate fingers. 10mW output power is demonstrated from a fixtured 338 GHz PA module.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"290 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115453720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Investigation of regrowth interface quality of AlGaInAs/InP buried heterostructure lasers AlGaInAs/InP埋置异质结构激光器再生界面质量研究
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI: 10.1109/ICIPRM.2010.5516092
Y. Takino, M. Shirao, Takashi Sato, N. Nishiyama, S. Arai
{"title":"Investigation of regrowth interface quality of AlGaInAs/InP buried heterostructure lasers","authors":"Y. Takino, M. Shirao, Takashi Sato, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2010.5516092","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516092","url":null,"abstract":"1.3-µm AlGaInAs/InP buried heterostructure lasers were prepared by a low-pressure organo-metallic vapor-phase-epitaxy with in-situ thermal cleaning. The regrowth interface quality dependence on thermal cleaning time has been investigated from their lasing properties as well as electroluminescence property below the threshold. As the results, under condition of PH3 atmosphere in the organo-metallic vapor-phase-epitaxy (OMVPE) reactor at a fixed temperature of 450 °C for 60 min cleaning time, successful operation with the internal quantum efficiency of around 81 % and the differential quantum efficiency of 63 % were obtained for the cavity length of 500 μm with cleaved facets.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127165400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High doping effects on in-situ Ohmic contacts to n-InAs n-InAs原位欧姆接触的高掺杂效应
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI: 10.1109/ICIPRM.2010.5516269
A. Baraskar, V. Jain, M. Wistey, U. Singisetti, Yong Ju Lee, B. Thibeault, A. Gossard, M. Rodwell
{"title":"High doping effects on in-situ Ohmic contacts to n-InAs","authors":"A. Baraskar, V. Jain, M. Wistey, U. Singisetti, Yong Ju Lee, B. Thibeault, A. Gossard, M. Rodwell","doi":"10.1109/ICIPRM.2010.5516269","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516269","url":null,"abstract":"We present the effect of active carrier concentration on the specific contact resistivity (ρ<inf>c</inf>) of in-situ molybdenum (Mo) Ohmic contacts to n-type InAs. It is observed that, although the Fermi level pins in the conduction band for InAs, the contact resistivity decreases with the increase in InAs active carrier concentration. The lowest ρ<inf>c</inf> obtained through transmission line model measurements was (0.6±0.4)×10<sup>−8</sup> Ω-cm<sup>2</sup> for samples with 8.2×10<sup>19</sup> cm<sup>−3</sup> active carrier concentration. The contacts were found to remain stable on annealing at 250 °C for 1 hour.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127828019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
A 120-Gbit/s 520-mVPP multiplexer IC using 1-µm self-aligned InP/InGaAs/InP DHBT with emitter mesa passivation ledge 采用1µm自对准InP/InGaAs/InP DHBT带发射极台面钝化壁的120 gbit /s 520 mvpp多路复用器IC
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI: 10.1109/ICIPRM.2010.5515958
Y. Arayashiki, Y. Ohkubo, T. Matsumoto, T. Koji, Y. Amano, A. Takagi, Y. Matsuoka
{"title":"A 120-Gbit/s 520-mVPP multiplexer IC using 1-µm self-aligned InP/InGaAs/InP DHBT with emitter mesa passivation ledge","authors":"Y. Arayashiki, Y. Ohkubo, T. Matsumoto, T. Koji, Y. Amano, A. Takagi, Y. Matsuoka","doi":"10.1109/ICIPRM.2010.5515958","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5515958","url":null,"abstract":"We fabricated 2:1 multiplexer IC (MUX) with a retiming function by using 1−µm self-aligned InP/InGaAs/InP double heterostructure bipolar transistors (DHBTs). As a result of the high performance DHBTs and the circuit design, in which we implemented broadband impedance matching, the MUX operated at 120 Gbit/s with a power dissipation of 1.27 W and an output amplitude of 520 mV when measured on the wafer. The MUX was assembled in a module using V-connectors for practical use. In this module, the MUX operated at 113 Gbit/s with an output amplitude of 514 mW and a power dissipation of 1.4 W.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124287424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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