Investigation of regrowth interface quality of AlGaInAs/InP buried heterostructure lasers

Abstract

1.3-µm AlGaInAs/InP buried heterostructure lasers were prepared by a low-pressure organo-metallic vapor-phase-epitaxy with in-situ thermal cleaning. The regrowth interface quality dependence on thermal cleaning time has been investigated from their lasing properties as well as electroluminescence property below the threshold. As the results, under condition of PH3 atmosphere in the organo-metallic vapor-phase-epitaxy (OMVPE) reactor at a fixed temperature of 450 °C for 60 min cleaning time, successful operation with the internal quantum efficiency of around 81 % and the differential quantum efficiency of 63 % were obtained for the cavity length of 500 μm with cleaved facets.