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2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)最新文献

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Ultra-low threshold 1490 nm surface-emitting BH-DFB laser diode with integrated monitor photodiode 超低阈值1490nm表面发射BH-DFB激光二极管，集成监控光电二极管
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI: 10.1109/ICIPRM.2010.5516156
M. Moehrle, J. Kreissl, W. Molzow, G. Przyrembel, C. Wagner, A. Sigmund, L. Moerl, N. Grote
{"title":"Ultra-low threshold 1490 nm surface-emitting BH-DFB laser diode with integrated monitor photodiode","authors":"M. Moehrle, J. Kreissl, W. Molzow, G. Przyrembel, C. Wagner, A. Sigmund, L. Moerl, N. Grote","doi":"10.1109/ICIPRM.2010.5516156","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516156","url":null,"abstract":"1490nm surface emitting BH-DFB-laser diodes incorporating a 45° turning mirror and an integrated monitor photodiode are presented for the first time. The devices show VCSEL-like threshold currents of as low as 3…7mA in the operation temperature range between 20°C and 90°C and a modulation bandwidth of >8GHz. The integrated monitor diode operates temperature independent and is therefore well suited for laser power control.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125093171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET 200nm自对准In0.53Ga0.47As MOSFET的制备与表征
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI: 10.1109/ICIPRM.2010.5515926
A. Olivier, N. Wichmann, J. Mo, A. Noudéviwa, Y. Roelens, L. Desplanque, X. Wallart, F. Danneville, G. Dambrine, S. Bollaert, F. Martin, O. Desplats, J. Saint-Martin, M. Shi, Y. Wang, M. Chauvat, P. Ruterana, H. Maher
{"title":"Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET","authors":"A. Olivier, N. Wichmann, J. Mo, A. Noudéviwa, Y. Roelens, L. Desplanque, X. Wallart, F. Danneville, G. Dambrine, S. Bollaert, F. Martin, O. Desplats, J. Saint-Martin, M. Shi, Y. Wang, M. Chauvat, P. Ruterana, H. Maher","doi":"10.1109/ICIPRM.2010.5515926","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5515926","url":null,"abstract":"In this paper, a 200 nm n-channel inversion-type self-aligned In0.53Ga0.47As MOSFET with a Al2O3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitride side-wall are performed for the fabrication of the n-type source and drain regions. The 200 nm gate-length MOSFET with a gate oxide thickness of 8 nm features the transconductance of 70 mS/mm and the maximum drain current of 200 mA/mm.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125155706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
MOVPE regrowth steps for high power Quantum Cascade Lasers 高功率量子级联激光器的MOVPE再生步骤
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI: 10.1109/ICIPRM.2010.5516056
O. Parillaud, M. Carras, G. Maisons, B. Simozrag, M. Garcia, X. Marcadet, F. Alexandre, O. Patard, F. Pommereau, O. Drisse
{"title":"MOVPE regrowth steps for high power Quantum Cascade Lasers","authors":"O. Parillaud, M. Carras, G. Maisons, B. Simozrag, M. Garcia, X. Marcadet, F. Alexandre, O. Patard, F. Pommereau, O. Drisse","doi":"10.1109/ICIPRM.2010.5516056","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516056","url":null,"abstract":"We report on the realization of both Distributed Feedback (DFB) and Fabry-Pérot (FP) Quantum Cascade Lasers (QCLs) at Alcatel Thales III-V Lab, involving MOVPE regrowth steps for the realization of the upper cladding and buried ridge structures. We present our results on both device types. Optimization of the planarization process as well as reduction of the thermal resistance achieved using semi-insulating InP:Fe for regrowth is shown and performance perspectives using these building blocks are addressed.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125848414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TM mode waveguide isolator monolithically integrated with InP active devices TM模式波导隔离器与InP有源器件单片集成
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI: 10.1109/ICIPRM.2010.5516289
G. Takahashi, T. Amemiya, Takuo Tanemura, A. Higo, K. Takeda, Y. Nakano
{"title":"TM mode waveguide isolator monolithically integrated with InP active devices","authors":"G. Takahashi, T. Amemiya, Takuo Tanemura, A. Higo, K. Takeda, Y. Nakano","doi":"10.1109/ICIPRM.2010.5516289","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516289","url":null,"abstract":"We propose and experimentally demonstrate a novel structure for monolithically integrating a TM-mode waveguide optical isolator with active InP devices. A semiconductor ring laser with integrated isolator is fabricated and demonstrated for the first time.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122564129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Epitaxial III-V planar nanowires: Self-aligned, high-mobility and transfer-printable 外延III-V平面纳米线:自对准、高迁移率和可转移打印
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI: 10.1109/ICIPRM.2010.5516728
S. Fortuna, R. Dowdy, Xiuling Li
{"title":"Epitaxial III-V planar nanowires: Self-aligned, high-mobility and transfer-printable","authors":"S. Fortuna, R. Dowdy, Xiuling Li","doi":"10.1109/ICIPRM.2010.5516728","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516728","url":null,"abstract":"We present planar, self-aligned, twin-free, and high-mobility GaAs semiconductor nanowires epitaxially grown on (100) and (110) GaAs substrates. In addition, such planar nanowires are directly transfer-printable and compatible with existing processing technology and integratable with various devices.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122652899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Investigation of bonding strength and photoluminescence properties of InP/Si surface activated bonding InP/Si表面活化键合强度及光致发光性能研究
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI: 10.1109/ICIPRM.2010.5516096
S. Kondo, T. Okumura, R. Osabe, N. Nishiyama, S. Arai
{"title":"Investigation of bonding strength and photoluminescence properties of InP/Si surface activated bonding","authors":"S. Kondo, T. Okumura, R. Osabe, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2010.5516096","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516096","url":null,"abstract":"A low-temperature direct wafer bonding technique has been researched by using plasma treatment. Si-to-Si direct bonding strength was 1.6 MPa by using plasma pretreatment prior to the heating and weighting. 1.4 MPa of InP/Si bonding strength was obtained by improving chemical cleaning process. On the other hand, photoluminescence properties of GaInAs/InP quantum wells bonded on Si substrate were investigated. An introduction of a 30-nm-thick superlattice buffer on the top of the wafer greatly suppressed photoluminescence intensity degradation near the bonded interface.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114439378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Investigation of the origin of InAs dot formation at the growth interrupted AlGaInAs hetero-interface grown by MOVPE MOVPE生长中断AlGaInAs异质界面处InAs点形成原因的研究
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI: 10.1109/ICIPRM.2010.5516035
T. Nagira, K. Ono, M. Takemi
{"title":"Investigation of the origin of InAs dot formation at the growth interrupted AlGaInAs hetero-interface grown by MOVPE","authors":"T. Nagira, K. Ono, M. Takemi","doi":"10.1109/ICIPRM.2010.5516035","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516035","url":null,"abstract":"In the growth of AlGaInAs/InP material system by metal organic vapor phase epitaxy (MOVPE), there are many hillocks on the wafer in some growth conditions. We analyzed the hillocks by TEM and EDX and found that the origin of the hillocks is InAs dots on growth interrupted interface. In addition, we investigated the growth condition dependence of hillock distribution in details, and revealed the origin and the mechanism of the formation of InAs dots.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"275 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130549729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Room temperature picosecond mode-locked pulse generation from a 1.55µm VECSEL with an InGaAsN/GaAsN fast saturable absorber mirror 采用InGaAsN/GaAsN快速饱和吸收镜的1.55 μ m VECSEL产生室温皮秒锁模脉冲
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI: 10.1109/ICIPRM.2010.5515998
A. Khadour, S. Bouchoule, J. Decobert, J. Harmand, J. Oudar
{"title":"Room temperature picosecond mode-locked pulse generation from a 1.55µm VECSEL with an InGaAsN/GaAsN fast saturable absorber mirror","authors":"A. Khadour, S. Bouchoule, J. Decobert, J. Harmand, J. Oudar","doi":"10.1109/ICIPRM.2010.5515998","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5515998","url":null,"abstract":"A 1.55µm VECSEL with a metal-GaAs/AlAs hybrid metamorphic mirror optimized for high power room temperature operation has been assembled with a fast saturable absorber mirror (SESAM) in a four-mirror cavity to generate mode-locked pulses at a frequency of 2 GHz. Stable pulses are obtained at room temperature avoiding the need for water cooling, with a pulsewidth < 2 ps and an average optical power at the output coupling mirror of 10 mW. The RF linewidth of the free running laser has been measured to be less than 1000 Hz.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123229384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of SiO2 on AlGaAs prepared by liquid phase deposition 液相沉积法制备AlGaAs表面SiO2的研究
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI: 10.1109/ICIPRM.2010.5516132
Kuan-Wei Lee, Jung-Sheng Huang, Yu-Lin Lu, F. Lee, H. Lin, J. Huang, Yeong-Her Wang
{"title":"Investigation of SiO2 on AlGaAs prepared by liquid phase deposition","authors":"Kuan-Wei Lee, Jung-Sheng Huang, Yu-Lin Lu, F. Lee, H. Lin, J. Huang, Yeong-Her Wang","doi":"10.1109/ICIPRM.2010.5516132","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516132","url":null,"abstract":"The liquid phase deposition (LPD) was used to deposit silicon oxide (SiO<inf>2</inf>) layer on AlGaAs near room temperature. The LPD method is not only simple but also can obtain the SiO<inf>2</inf> very economically. Both the aqueous solution of hydro-fluosilicic acid (H<inf>2</inf>SiF<inf>6</inf>) and boric acid (H<inf>3</inf>BO<inf>3</inf>) were used for the LPD solution. After rapid temperature annealing (RTA) at 300°C for 1 min, the leakage current density is ~ 4.24 × 10<sup>−7</sup> A/cm<sup>2</sup> at 1 MV/cm, and the interface trap density is ~ 1.7 × 10<sup>11</sup> cm<sup>−2</sup>eV<sup>−1</sup> for the LPD-SiO<inf>2</inf> thickness of 29 nm.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127904914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dependence of threshold current density on quantum well composition for compressive strained-layer AlxGayIn1−x−yAs lasers 压缩应变层AlxGayIn1−x−yAs激光器阈值电流密度与量子阱组成的关系
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI: 10.1109/ICIPRM.2010.5516084
D. Sapkota, M. S. Kayastha, K. Wakita
{"title":"Dependence of threshold current density on quantum well composition for compressive strained-layer AlxGayIn1−x−yAs lasers","authors":"D. Sapkota, M. S. Kayastha, K. Wakita","doi":"10.1109/ICIPRM.2010.5516084","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516084","url":null,"abstract":"Separate confinement AlGaInAs/InP compressive strained quantum well lasers especially in the wavelength range of 1.55 μm and 1.3 μm with 7.6 nm well thick have been studied. Threshold current density and emission wavelengths have been calculated as a function of well composition. A minimum of threshold current density of 146 Acm<sup>−2</sup> was obtained for the devices with Al<inf>0.1</inf>Ga<inf>0.16</inf>In<inf>0.74</inf>As well which is the lowest value ever reported at this well composition.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"246 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132028541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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