InP/Si表面活化键合强度及光致发光性能研究

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5516096

S. Kondo, T. Okumura, R. Osabe, N. Nishiyama, S. Arai

{"title":"InP/Si表面活化键合强度及光致发光性能研究","authors":"S. Kondo, T. Okumura, R. Osabe, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2010.5516096","DOIUrl":null,"url":null,"abstract":"A low-temperature direct wafer bonding technique has been researched by using plasma treatment. Si-to-Si direct bonding strength was 1.6 MPa by using plasma pretreatment prior to the heating and weighting. 1.4 MPa of InP/Si bonding strength was obtained by improving chemical cleaning process. On the other hand, photoluminescence properties of GaInAs/InP quantum wells bonded on Si substrate were investigated. An introduction of a 30-nm-thick superlattice buffer on the top of the wafer greatly suppressed photoluminescence intensity degradation near the bonded interface.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Investigation of bonding strength and photoluminescence properties of InP/Si surface activated bonding\",\"authors\":\"S. Kondo, T. Okumura, R. Osabe, N. Nishiyama, S. Arai\",\"doi\":\"10.1109/ICIPRM.2010.5516096\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low-temperature direct wafer bonding technique has been researched by using plasma treatment. Si-to-Si direct bonding strength was 1.6 MPa by using plasma pretreatment prior to the heating and weighting. 1.4 MPa of InP/Si bonding strength was obtained by improving chemical cleaning process. On the other hand, photoluminescence properties of GaInAs/InP quantum wells bonded on Si substrate were investigated. An introduction of a 30-nm-thick superlattice buffer on the top of the wafer greatly suppressed photoluminescence intensity degradation near the bonded interface.\",\"PeriodicalId\":197102,\"journal\":{\"name\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-07-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2010.5516096\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2010.5516096","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

研究了采用等离子体处理的低温直接晶圆键合技术。在加热和称重前采用等离子体预处理，硅对硅直接结合强度为1.6 MPa。通过改进化学清洗工艺，获得了1.4 MPa的InP/Si结合强度。另一方面，研究了结合在Si衬底上的GaInAs/InP量子阱的光致发光特性。在晶圆顶部引入30nm厚的超晶格缓冲层，极大地抑制了键合界面附近的光致发光强度下降。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Investigation of bonding strength and photoluminescence properties of InP/Si surface activated bonding

A low-temperature direct wafer bonding technique has been researched by using plasma treatment. Si-to-Si direct bonding strength was 1.6 MPa by using plasma pretreatment prior to the heating and weighting. 1.4 MPa of InP/Si bonding strength was obtained by improving chemical cleaning process. On the other hand, photoluminescence properties of GaInAs/InP quantum wells bonded on Si substrate were investigated. An introduction of a 30-nm-thick superlattice buffer on the top of the wafer greatly suppressed photoluminescence intensity degradation near the bonded interface.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

自引率

0.00%

发文量