压缩应变层AlxGayIn1−x−yAs激光器阈值电流密度与量子阱组成的关系

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5516084

D. Sapkota, M. S. Kayastha, K. Wakita

{"title":"压缩应变层AlxGayIn1−x−yAs激光器阈值电流密度与量子阱组成的关系","authors":"D. Sapkota, M. S. Kayastha, K. Wakita","doi":"10.1109/ICIPRM.2010.5516084","DOIUrl":null,"url":null,"abstract":"Separate confinement AlGaInAs/InP compressive strained quantum well lasers especially in the wavelength range of 1.55 μm and 1.3 μm with 7.6 nm well thick have been studied. Threshold current density and emission wavelengths have been calculated as a function of well composition. A minimum of threshold current density of 146 Acm<sup>−2</sup> was obtained for the devices with Al<inf>0.1</inf>Ga<inf>0.16</inf>In<inf>0.74</inf>As well which is the lowest value ever reported at this well composition.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"246 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Dependence of threshold current density on quantum well composition for compressive strained-layer AlxGayIn1−x−yAs lasers\",\"authors\":\"D. Sapkota, M. S. Kayastha, K. Wakita\",\"doi\":\"10.1109/ICIPRM.2010.5516084\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Separate confinement AlGaInAs/InP compressive strained quantum well lasers especially in the wavelength range of 1.55 μm and 1.3 μm with 7.6 nm well thick have been studied. Threshold current density and emission wavelengths have been calculated as a function of well composition. A minimum of threshold current density of 146 Acm<sup>−2</sup> was obtained for the devices with Al<inf>0.1</inf>Ga<inf>0.16</inf>In<inf>0.74</inf>As well which is the lowest value ever reported at this well composition.\",\"PeriodicalId\":197102,\"journal\":{\"name\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"246 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-07-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2010.5516084\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2010.5516084","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文研究了分离约束AlGaInAs/InP压缩应变量子阱激光器，特别是波长范围为1.55 μm和1.3 μm，阱厚为7.6 nm的激光器。计算了阈值电流密度和发射波长作为井成分的函数。对于Al0.1Ga0.16In0.74As的器件，最小阈值电流密度为146 Acm−2，这是该井组成中报道的最低值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Dependence of threshold current density on quantum well composition for compressive strained-layer AlxGayIn1−x−yAs lasers

Separate confinement AlGaInAs/InP compressive strained quantum well lasers especially in the wavelength range of 1.55 μm and 1.3 μm with 7.6 nm well thick have been studied. Threshold current density and emission wavelengths have been calculated as a function of well composition. A minimum of threshold current density of 146 Acm⁻² was obtained for the devices with Al0.1Ga0.16In0.74As well which is the lowest value ever reported at this well composition.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

自引率

0.00%

发文量