超低阈值1490nm表面发射BH-DFB激光二极管，集成监控光电二极管

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5516156

M. Moehrle, J. Kreissl, W. Molzow, G. Przyrembel, C. Wagner, A. Sigmund, L. Moerl, N. Grote

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引用次数: 12

摘要

首次提出了1490nm面发射bh - dfb激光二极管，该激光二极管采用45°旋转反射镜和集成监控光电二极管。该器件在20°C至90°C的工作温度范围内显示出类似vcsel的阈值电流低至3…7mA，调制带宽>8GHz。集成的监测二极管工作温度无关，因此非常适合激光功率控制。

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Ultra-low threshold 1490 nm surface-emitting BH-DFB laser diode with integrated monitor photodiode

1490nm surface emitting BH-DFB-laser diodes incorporating a 45° turning mirror and an integrated monitor photodiode are presented for the first time. The devices show VCSEL-like threshold currents of as low as 3…7mA in the operation temperature range between 20°C and 90°C and a modulation bandwidth of >8GHz. The integrated monitor diode operates temperature independent and is therefore well suited for laser power control.

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来源期刊

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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