Epitaxial III-V planar nanowires: Self-aligned, high-mobility and transfer-printable

Abstract

We present planar, self-aligned, twin-free, and high-mobility GaAs semiconductor nanowires epitaxially grown on (100) and (110) GaAs substrates. In addition, such planar nanowires are directly transfer-printable and compatible with existing processing technology and integratable with various devices.