采用InGaAsN/GaAsN快速饱和吸收镜的1.55 μ m VECSEL产生室温皮秒锁模脉冲

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5515998

A. Khadour, S. Bouchoule, J. Decobert, J. Harmand, J. Oudar

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引用次数: 0

摘要

一个1.55µm的VECSEL与一个快速饱和吸收镜(SESAM)组装在一个四镜腔中，产生频率为2ghz的锁模脉冲。VECSEL具有优化的高功率室温工作金属- gaas /AlAs混合变质镜。在室温下获得了稳定的脉冲，避免了水冷却的需要，脉冲宽度< 2 ps，输出耦合镜的平均光功率为10 mW。经测量，自由运行激光器的射频线宽小于1000hz。

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Room temperature picosecond mode-locked pulse generation from a 1.55µm VECSEL with an InGaAsN/GaAsN fast saturable absorber mirror

A 1.55µm VECSEL with a metal-GaAs/AlAs hybrid metamorphic mirror optimized for high power room temperature operation has been assembled with a fast saturable absorber mirror (SESAM) in a four-mirror cavity to generate mode-locked pulses at a frequency of 2 GHz. Stable pulses are obtained at room temperature avoiding the need for water cooling, with a pulsewidth < 2 ps and an average optical power at the output coupling mirror of 10 mW. The RF linewidth of the free running laser has been measured to be less than 1000 Hz.

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2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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