膜光子电路用横向结波导型光电二极管

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5516217

Daisuke Kondo, T. Okumura, H. Ito, Seunghun Lee, T. Amemiya, N. Nishiyama, S. Arai

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引用次数: 1

摘要

采用三步法在半绝缘InP衬底上生长出了一种横向结型光电二极管。当条纹宽度为1.4µm，器件长度为220µm时，在0 V和- 2 V的偏置电压下，器件的响应度为0.27 A/W, 3db带宽分别为6 GHz和7.5 GHz。在0电压下无错误传输高达6gbps。

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Lateral junction waveguide type photodiode for membrane photonic circuits

A lateral junction type photodiode grown on a semi-insulating InP substrate was realized by 3-step OMVPE growth. The responsivity of 0.27 A/W, 3 dB bandwidth of 6 GHz and 7.5 GHz at a bias voltage of 0 V and −2 V, respectively, were obtained for the stripe width of 1.4 µm and device length of 220µm. An error free transmissions up to 6 Gbps at 0 V were confirmed.

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2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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