n-InAs原位欧姆接触的高掺杂效应

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5516269

A. Baraskar, V. Jain, M. Wistey, U. Singisetti, Yong Ju Lee, B. Thibeault, A. Gossard, M. Rodwell

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引用次数: 25

摘要

研究了活性载流子浓度对原位钼(Mo)欧姆接触n型InAs的比接触电阻率(ρc)的影响。观察到，虽然费米能级在InAs的导带内引脚，但接触电阻率随InAs活性载流子浓度的增加而减小。对于活性载流子浓度为8.2×1019 cm−3的样品，通过传输线模型测量得到的最低ρc为(0.6±0.4)×10−8 Ω-cm2。在250℃退火1小时后，触点保持稳定。

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High doping effects on in-situ Ohmic contacts to n-InAs

We present the effect of active carrier concentration on the specific contact resistivity (ρc) of in-situ molybdenum (Mo) Ohmic contacts to n-type InAs. It is observed that, although the Fermi level pins in the conduction band for InAs, the contact resistivity decreases with the increase in InAs active carrier concentration. The lowest ρc obtained through transmission line model measurements was (0.6±0.4)×10⁻⁸ Ω-cm² for samples with 8.2×10¹⁹ cm⁻³ active carrier concentration. The contacts were found to remain stable on annealing at 250 °C for 1 hour.

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来源期刊

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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