InAs/AlSb hemt的直流和射频低温行为

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5516313

G. Moschetti, P. Nilsson, L. Desplanque, X. Wallart, H. Rodilla, J. Mateos, J. Grahn

{"title":"InAs/AlSb hemt的直流和射频低温行为","authors":"G. Moschetti, P. Nilsson, L. Desplanque, X. Wallart, H. Rodilla, J. Mateos, J. Grahn","doi":"10.1109/ICIPRM.2010.5516313","DOIUrl":null,"url":null,"abstract":"DC and RF properties are reported for InAs/AlSb HEMTs operating under cryogenic conditions (6 K) for a drain source bias up to 0.3 V. Compared to room temperature (300 K), a large improvement in device properties was observed: lower Ron, lower gds, a more distinct knee in the Ids (Vds) characteristics, increased fT and a reduction of the gate leakage current of more than two orders of magnitude. This makes InAs/AlSb HEMT technology of large interest in cryogenic low-noise amplifier designs with high constraints on power dissipation.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"DC and RF cryogenic behaviour of InAs/AlSb HEMTs\",\"authors\":\"G. Moschetti, P. Nilsson, L. Desplanque, X. Wallart, H. Rodilla, J. Mateos, J. Grahn\",\"doi\":\"10.1109/ICIPRM.2010.5516313\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"DC and RF properties are reported for InAs/AlSb HEMTs operating under cryogenic conditions (6 K) for a drain source bias up to 0.3 V. Compared to room temperature (300 K), a large improvement in device properties was observed: lower Ron, lower gds, a more distinct knee in the Ids (Vds) characteristics, increased fT and a reduction of the gate leakage current of more than two orders of magnitude. This makes InAs/AlSb HEMT technology of large interest in cryogenic low-noise amplifier designs with high constraints on power dissipation.\",\"PeriodicalId\":197102,\"journal\":{\"name\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-07-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2010.5516313\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2010.5516313","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

报道了在低温条件下(6 K)工作的InAs/AlSb hemt的直流和射频特性，漏源偏置高达0.3 V。与室温(300 K)相比，器件性能有了很大的改善:更低的Ron，更低的gds，更明显的Ids (Vds)特性的变化，fT增加，栅极泄漏电流降低了两个数量级以上。这使得InAs/AlSb HEMT技术在具有高功耗限制的低温低噪声放大器设计中备受关注。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

DC and RF cryogenic behaviour of InAs/AlSb HEMTs

DC and RF properties are reported for InAs/AlSb HEMTs operating under cryogenic conditions (6 K) for a drain source bias up to 0.3 V. Compared to room temperature (300 K), a large improvement in device properties was observed: lower Ron, lower gds, a more distinct knee in the Ids (Vds) characteristics, increased fT and a reduction of the gate leakage current of more than two orders of magnitude. This makes InAs/AlSb HEMT technology of large interest in cryogenic low-noise amplifier designs with high constraints on power dissipation.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

自引率

0.00%

发文量