Shaojie Zhang, Ye Tao, Shiwei Qin, Dong Li, Kunkun Cao, Lin Lv, Guokun Ma, Yiheng Rao, Houzhao Wan, Wang Hao
{"title":"Memristors based on two-dimensional h-BN materials: synthesis, mechanism, optimization and application","authors":"Shaojie Zhang, Ye Tao, Shiwei Qin, Dong Li, Kunkun Cao, Lin Lv, Guokun Ma, Yiheng Rao, Houzhao Wan, Wang Hao","doi":"10.1038/s41699-024-00519-z","DOIUrl":"10.1038/s41699-024-00519-z","url":null,"abstract":"Memristors offer vast application opportunities in storage, logic devices, and computation due to their nonvolatility, low power consumption, and fast operational speeds. Two-dimensional materials, characterized by their novel mechanisms, ultra-thin channels, high mechanical flexibility, and superior electrical properties, demonstrate immense potential in the domain of high-density, fast, and energy-efficient memristors. Hexagonal boron nitride (h-BN), as a new two-dimensional material, has the characteristics of high thermal conductivity, flexibility, and low power consumption, and has a significant application prospect in the field of memristor. In this paper, the recent research progress of the h-BN memristor is reviewed from the aspects of device fabrication, resistance mechanism, and application prospect.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-25"},"PeriodicalIF":9.1,"publicationDate":"2024-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00519-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142862441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"First-principles study of the magneto-Raman effect in van der Waals layered magnets","authors":"Xiangru Kong, Panchapakesan Ganesh, Liangbo Liang","doi":"10.1038/s41699-024-00515-3","DOIUrl":"10.1038/s41699-024-00515-3","url":null,"abstract":"Magneto-Raman spectroscopy has been used to study spin-phonon coupling in two-dimensional (2D) magnets. Raman spectra of CrI3 show a strong dependence on the magnetic order within a layer and between the layers. Here we carry out the first systematic theoretical investigation of the magneto-Raman effect in 2D magnets by performing density functional theory calculations and developing a generalized polarizability model. Our first-principles simulations well reproduce experimental Raman spectra of CrI3 with different magnetic states. The model reveals how the change of spin orientation in each layer is coupled to the layer’s vibration to induce or eliminate the spin-dependent anti-symmetric off-diagonal terms in the Raman tensor for altering the selection rules. We also uncover that the correlation between phonon modes and magnetic orders is a universal phenomenon, which should exist in other phonon modes and 2D magnets. Our predictive simulations and modeling are expected to guide the research in 2D magnets.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-10"},"PeriodicalIF":9.1,"publicationDate":"2024-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00515-3.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142862440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Asif A. Shah, Aadil Bashir Dar, Mayank Shrivastava
{"title":"Revisiting the origin of non-volatile resistive switching in MoS2 atomristor","authors":"Asif A. Shah, Aadil Bashir Dar, Mayank Shrivastava","doi":"10.1038/s41699-024-00518-0","DOIUrl":"10.1038/s41699-024-00518-0","url":null,"abstract":"Recently, Non-Volatile Resistive Switching (NVRS) has been demonstrated in Metal-monolayer MoS2-Metal atomristors. While experiments based on Au metal report the origin of NVRS to be extrinsic, caused by the Au atom adsorption into sulfur vacancies, however, more recently molecular dynamics based on reactive forcefield (ReaxFF) suggest that both monolayer and multilayer MoS2 can also host intrinsic non-volatile resistive states whereby an S atom at a monosulfur vacancy (parent state) pops into the molybdenum plane (popped state) under applied out-of-plane electric field. Our rigorous computations based on Density Functional Theory (DFT) and M3GNet (deep learned forcefield) to carry out structural relaxations and molecular dynamics reveal that such a popped state is unstable and does not represent any intrinsic non-volatile resistive state. This is in contrast with the ReaxFF used in previous studies which inaccurately describes the Potential Energy Surface (PES) of MoS2 around the popped state. More importantly, Au atom adsorbed at a sulfur vacancy in MoS2 atomristors represents a stable non-volatile resistive state which is in excellent agreement with earlier experiment. Furthermore, it is observed that the local heating generated around the adsorbed Au atom in low resistive state leads to cycle-to-cycle variability in MoS2 atomristors.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-9"},"PeriodicalIF":9.1,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00518-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electrocatalytic mechanism for overall water splitting to produce sustainable hydrogen by 2D Janus MoSH monolayer","authors":"Deobrat Singh, Nisha Singh, Yogesh Sonvane","doi":"10.1038/s41699-024-00516-2","DOIUrl":"10.1038/s41699-024-00516-2","url":null,"abstract":"In the present work, we investigates the potential of two dimensional (2D) Janus MoSH monolayer as an electrocatalyst for overall water splitting using first-principles calculations. Our results shows that 2D Janus MoSH monolayer exhibits excellent structural stability and electronic properties, which are essential for efficient electrocatalysis. We find that the charge transfer mechanism between Mo and S atoms plays a crucial role in the electrocatalytic activity of 2D Janus MoSH monolayer. Due to the asymmetric structure of MoSH monolayer, it has intrinsic electric field with dipole moment of 0.24 D. Moreover, we demonstrate that 2D Janus MoSH monolayer exhibits high catalytic activity for both hydrogen evolution reaction (HER) with overpotential 0.04 V and oxygen evolution reaction (OER) with overpotential 0.11 V, making it a promising candidate for overall water splitting. Our findings have significant implications for the design and optimization of 2D monolayered materials for renewable energy production. By providing insights into the underlying mechanisms of HER and OER on 2D Janus MoSH monolayer, our study paves the way for the development of efficient and sustainable electrocatalysts for water splitting. We hope that current work will be helpful in understanding the electrocatalytic mechanism of 2D Janus MoSH monolayer and its potential applications in renewable energy production.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-9"},"PeriodicalIF":9.1,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00516-2.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142714751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Transient dynamics and long-range transport of 2D exciton with managed potential disorder and phonon scattering","authors":"Wenqi Qian, Pengfei Qi, Yuchen Dai, Guangyi Tao, Haiyi Liu, Lie Lin, Zheyu Fang, Weiwei Liu","doi":"10.1038/s41699-024-00512-6","DOIUrl":"10.1038/s41699-024-00512-6","url":null,"abstract":"Two-dimensional excitons, characterized by high binding energy and valley pseudospin, are key to advancing photonic and electronic devices through controlled spatiotemporal dynamics of exciton flux. However, optimizing excitonic transport and emission dynamics, considering potential disorder and phonon scattering, requires further research. This study systematically investigates the effects of hexagonal boron nitride (hBN) encapsulation on semiconductor monolayers. Time-resolved photoluminescence (TRPL) and femtosecond pump-probe techniques reveal that encapsulation reduces excitonic radiative lifetime and enhances exciton-exciton annihilation, due to increased dielectric screening, which enlarges the Bohr radius and decreases binding energy. It also manages phonon scattering and thermal fluctuations, confirming non-monotonic temperature effects on emission and diffusion. The reduced disorder by hBN leads to a lowered optimized temperature from 250 K to 200 K, concurrently resulting in a doubled enhancement of the effective exciton diffusion coefficient. These findings highlight the importance of thermal and dielectric environmental control for ultrafast 2D exciton-based devices.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-9"},"PeriodicalIF":9.1,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00512-6.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142714744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Andrejs Kudlis, Ivan Aleksandrov, Zaur Alisultanov, Kalman Varga, Ivan Shelykh, Vanik Shahnazaryan
{"title":"Theory of magnetotrion-polaritons in transition metal dichalcogenide monolayers","authors":"Andrejs Kudlis, Ivan Aleksandrov, Zaur Alisultanov, Kalman Varga, Ivan Shelykh, Vanik Shahnazaryan","doi":"10.1038/s41699-024-00517-1","DOIUrl":"10.1038/s41699-024-00517-1","url":null,"abstract":"Magnetic field is a powerful tool for the manipulation of material’s electronic and optical properties. In the domain of transition metal dichalcogenide monolayers, it allows one to unveil the spin, valley, and orbital properties of many-body excitonic complexes. Here we study theoretically the impact of normal-to-plane magnetic field on trions and trion-polaritons. We demonstrate that spin and orbital effects of a magnetic field give comparable contributions to the trion energies. Moreover, as magnetic field redistributes the free electron gas between two valleys in the conductance band, the trion-photon coupling becomes polarization and valley dependent. This results in an effective giant Zeeman splitting of trion-polaritons, in-line with the recent experimental observations.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-7"},"PeriodicalIF":9.1,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00517-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142714743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yulu Mao, Fan Fei, Dajun Zhang, Haolin You, Haotian Jiang, Carter Fox, Yangchen He, Daniel Rhodes, Chu Ma, Jun Xiao, Ying Wang
{"title":"Revealing stacking order transition via nanomechanical resonator","authors":"Yulu Mao, Fan Fei, Dajun Zhang, Haolin You, Haotian Jiang, Carter Fox, Yangchen He, Daniel Rhodes, Chu Ma, Jun Xiao, Ying Wang","doi":"10.1038/s41699-024-00513-5","DOIUrl":"10.1038/s41699-024-00513-5","url":null,"abstract":"The physical properties of two-dimensional (2D) van der Waals (vdW) materials are profoundly influenced by their stacking orders, which affect interlayer coupling and crystal symmetry, leading to fascinating strongly correlated orders. Detecting stacking orders is important, yet challenging as they involve sub-nanometer shifts in the relative arrangement of layers. In this study, we utilize nanomechanical resonators to detect the strain change during the stacking order transition of octahedrally coordinated thin molybdenum ditelluride (MoTe2) membranes and show the change in stacking orders can be reflected by the vibration modes of nanomechanical resonators. We discover that a strain as small as 0.014%—induced by transitions in the stacking order—results in a notable frequency shift up to 1.019 MHz in the mechanical resonance. We establish the relationship between the detection sensitivity of stacking orders and both internal and external parameters including higher-order vibrations, electrostatic energy, and initial strain. Our nanomechanical methodology offers a potential avenue for creating a comprehensive phase diagram by uncovering stacking orders across a wide array of van der Waals materials and leveraging ultralow-barrier stacking order transitions for energy-efficient devices.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-7"},"PeriodicalIF":9.1,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00513-5.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142694864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Natalie N. Neal, Kailash Arole, Huaixuan Cao, Vrushali Kotasthane, Sisi Xiang, Diego Ross, Peter R. Stevenson, Miladin Radovic, Micah J. Green, Jodie L. Lutkenhaus
{"title":"Controlled layer-by-layer assembly and structured coloration of Ti3C2Tz MXene/polyelectrolyte heterostructures","authors":"Natalie N. Neal, Kailash Arole, Huaixuan Cao, Vrushali Kotasthane, Sisi Xiang, Diego Ross, Peter R. Stevenson, Miladin Radovic, Micah J. Green, Jodie L. Lutkenhaus","doi":"10.1038/s41699-024-00514-4","DOIUrl":"10.1038/s41699-024-00514-4","url":null,"abstract":"Structural color arises from light scattering rather than organic pigments and can be found in Nature, such as in bird feathers and butterfly wings. Synthetic materials can mimic Nature by leveraging materials with contrasting optical characteristics by controlling each materials’ spatial arrangement in a heterostructure. Two-dimensional MXene nanosheets are particularly interesting due to their unique optical properties, but MXenes have not been used directly as a structural colorant because it is challenging to control the spatial placement of MXenes at the nanometer level. Here, we report the emergence of structural color in layer-by-layer (LbL) assemblies of Ti3C2Tz MXene nanosheets and polyelectrolyte heterostructures with controlled block thicknesses. The block thickness and spatial placement of MXene are controlled by the assembly’s salt concentration and number of layer pairs. This work demonstrates that optical characteristics of MXene/polyelectrolyte heterostructures depend on MXene content and placement, while deepening the understanding of MXenes within structural color films.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-12"},"PeriodicalIF":9.1,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00514-4.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142694868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Solution-processable 2D materials for monolithic 3D memory-sensing-computing platforms: opportunities and challenges","authors":"Baoshan Tang, Maheswari Sivan, Jin Feng Leong, Zefeng Xu, Yu Zhang, Jianan Li, Ruyue Wan, Quanzhen Wan, Evgeny Zamburg, Aaron V-Y Thean","doi":"10.1038/s41699-024-00508-2","DOIUrl":"10.1038/s41699-024-00508-2","url":null,"abstract":"Solution-processable 2D materials (2DMs) are gaining attention for applications in logic, memory, and sensing devices. This review surveys recent advancements in memristors, transistors, and sensors using 2DMs, focusing on their charge transport mechanisms and integration into silicon CMOS platforms. We highlight key challenges posed by the material’s nanosheet morphology and defect dynamics and discuss future potential for monolithic 3D integration with CMOS technology.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-30"},"PeriodicalIF":9.1,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00508-2.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142637015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Luca Tomarchio, Vincent Polewczyk, Lorenzo Mosesso, Alain Marty, Salvatore Macis, Matthieu Jamet, Frédéric Bonell, Stefano Lupi
{"title":"Light-driven electrodynamics and demagnetization in FenGeTe2 (n = 3, 5) thin films","authors":"Luca Tomarchio, Vincent Polewczyk, Lorenzo Mosesso, Alain Marty, Salvatore Macis, Matthieu Jamet, Frédéric Bonell, Stefano Lupi","doi":"10.1038/s41699-024-00510-8","DOIUrl":"10.1038/s41699-024-00510-8","url":null,"abstract":"Two-dimensional materials-based ultrafast spintronics are expected to surpass conventional data storage and manipulation technologies, that are now reaching their fundamental limits. The newly discovered van der Waals (VdW) magnets provide a new platform for ultrafast spintronics since their magnetic and electrical properties can be tuned by many external factors, such as strain, voltage, magnetic field, or light absorption for instance. Here, we report on the direct relationship between magnetic order and Terahertz (THz) electrodynamics in FenGeTe2 (n = 3, 5) (FGT) films after being illuminated by a femtosecond optical pulse, studying their ultrafast THz response as a function of the optical pump-THz probe temporal delay. In Fe5GeTe2, we find clear evidence that light-induced electronic excitations directly influence THz electrodynamics similarly to a demagnetization process, contrasting with the effects observed in Fe3GeTe2, which are characterized by a thermal energy transfer among electrons, magnons, and phonons. We address these effects as a function of the pump fluence and pump-probe delay, and by tuning the temperature across the magnetic ordering Curie temperature, highlighting the microscopic mechanisms describing the out-of-equilibrium evolution of the THz conductivity. Finally, we find evidence for the incoherent-coherent crossover predicted by the Kondo-Ising scenario in Fe3GeTe2 and successfully simulate its light-driven electrodynamics through a three-temperature model. As indicated by these results, FGT surpasses conventional metals in terms of modulating their properties using an optical lever.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-8"},"PeriodicalIF":9.1,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00510-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142600880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}