npj 2D Materials and Applications最新文献

Oriented 2D Ruddlesden-Popper metal halides by pulsed laser deposition. 脉冲激光沉积定向二维Ruddlesden-Popper金属卤化物。

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2025-01-01 Epub Date: 2025-06-12 DOI: 10.1038/s41699-025-00571-3

Junia S Solomon, Nada Mrkyvkova, Vojtĕch Kliner, Tatiana Soto-Montero, Ismael Fernandez-Guillen, Martin Ledinský, Pablo P Boix, Peter Siffalovic, Monica Morales-Masis

{"title":"Oriented 2D Ruddlesden-Popper metal halides by pulsed laser deposition.","authors":"Junia S Solomon, Nada Mrkyvkova, Vojtĕch Kliner, Tatiana Soto-Montero, Ismael Fernandez-Guillen, Martin Ledinský, Pablo P Boix, Peter Siffalovic, Monica Morales-Masis","doi":"10.1038/s41699-025-00571-3","DOIUrl":"10.1038/s41699-025-00571-3","url":null,"abstract":"Two-dimensional (2D) Ruddlesden-Popper (RP) metal halides present unique and tunable properties. However, direct and oriented synthesis is challenging due to low formation energies that lead to rapid, uncontrolled growth during solution-based processing. Here, we report the solvent-free growth of oriented n = 1 (PEA)2PbI4 RP films by pulsed laser deposition (PLD). In situ photoluminescence (PL) during deposition reveals the formation of the n = 1 phase at the early stages of growth. X-ray diffraction (XRD) and grazing-incidence wide-angle scattering (GIWAXS) confirm a single oriented n = 1 phase, independent of the substrate. Co-localized spatially resolved PL and AFM further validate the conformal growth. While oriented growth is substrate-independent, film stability is not. (PEA)2PbI4 films grown on strained epitaxial MAPbI3 remain stable for over 184 days without any sign of cation exchange. This work highlights the potential of PLD for direct, room-temperature synthesis of 2D (PEA)2PbI4 RP films and stable 2D/3D heterostructures.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":"9 1","pages":"50"},"PeriodicalIF":9.1,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12162342/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144302595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Brightening dark excitons and trions in systems with a Mexican-hat energy dispersion: example of InSe. 用墨西哥帽能量色散使系统中的暗激子和三角子变亮：InSe的例子。

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2025-01-01 Epub Date: 2025-07-21 DOI: 10.1038/s41699-025-00570-4

Lewis J Burke, Mark T Greenaway, Joseph J Betouras

引用次数: 0

Layer-by-layer assembly yields thin graphene films with near theoretical conductivity. 一层接一层的组装产生了接近理论导电性的薄石墨烯薄膜。

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2025-01-01 Epub Date: 2025-01-08 DOI: 10.1038/s41699-025-00525-9

Oran Cassidy, Kevin Synnatschke, Jose M Munuera, Cian Gabbett, Tian Carey, Luke Doolan, Eoin Caffrey, Jonathan N Coleman

引用次数: 0

Elucidating the role of stacking faults in TlGaSe₂ on its thermoelectric properties. TlGaSe2中层错对其热电性能的影响。

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2025-01-01 Epub Date: 2025-06-06 DOI: 10.1038/s41699-025-00569-x

Tigran Simonian, Ahin Roy, Akash Bajaj, Rui Dong, Zheng Lei, Zdeněk Sofer, Stefano Sanvito, Valeria Nicolosi

{"title":"Elucidating the role of stacking faults in TlGaSe2 on its thermoelectric properties.","authors":"Tigran Simonian, Ahin Roy, Akash Bajaj, Rui Dong, Zheng Lei, Zdeněk Sofer, Stefano Sanvito, Valeria Nicolosi","doi":"10.1038/s41699-025-00569-x","DOIUrl":"10.1038/s41699-025-00569-x","url":null,"abstract":"Thermoelectric materials are of great interest for heat energy harvesting applications. One such promising material is TlGaSe2, a 2D-layered, p-type semiconducting ternary chalcogenide. Recent reports show it can be processed as a thin film, opening the door for large-scale commercialization. However, TlGaSe2 is prone to stacking faults along the [001] stacking direction and their role in its thermoelectric properties has not yet been understood. Herein, TlGaSe2 is investigated via (scanning) transmission electron microscopy and first-principles calculations. Stacking faults are found to be present throughout the material, as density functional theory calculations reveal a low stacking fault energy of ~12 mJ m-2. Electron transport calculations show an enhancement of thermoelectric power factors when stacking faults are present. This implies the presence of stacking faults is key to the material's excellent thermoelectric properties along the [001] stacking direction, which can be further enhanced by doping the material to carrier concentrations of ~1019 cm-3.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":"9 1","pages":"46"},"PeriodicalIF":9.1,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12143981/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144248914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ab initio simulation of spin-charge qubits based on bilayer graphene-WSe₂ quantum dots. 基于双层石墨烯- wse2量子点的自旋电荷量子比特从头算模拟。

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2025-01-01 Epub Date: 2025-06-11 DOI: 10.1038/s41699-025-00568-y

Huaiyu Ge, Peter Koopmann, Filip Mrcarica, Otto T P Schmidt, Ilan Bouquet, Mauro Dossena, Mathieu Luisier, Jiang Cao

引用次数: 0

Andreev pair injection into a transition metal dichalcogenide monolayer. Andreev对注入过渡金属二硫化物单层。

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2025-01-01 Epub Date: 2025-05-03 DOI: 10.1038/s41699-025-00553-5

D Panna, R Itzhak, A Kumar, S Bouscher, N Suleymanov, B Minkovich, Z Gan, A George, A Turchanin, I Goykhman, A Hayat

{"title":"Andreev pair injection into a transition metal dichalcogenide monolayer.","authors":"D Panna, R Itzhak, A Kumar, S Bouscher, N Suleymanov, B Minkovich, Z Gan, A George, A Turchanin, I Goykhman, A Hayat","doi":"10.1038/s41699-025-00553-5","DOIUrl":"https://doi.org/10.1038/s41699-025-00553-5","url":null,"abstract":"We demonstrate Andreev pair injection across Nb-WS2 junction evident as Andreev reflection in differential conductivity spectra below Nb critical temperature <math> <msub><mrow><mi>T</mi></mrow> <mrow><mi>c</mi></mrow> </msub> </math> . The superconducting- 2D semiconducting junction defined by a focused ion beam, shaped Nb pads, and semi-dry transfer of single layer CVD-grown WS2 crystals ensured the mechanical integrity of the 2D TMD film, reduced contamination and defects at Nb-WS2 junction, enabling the pristine study of the interface and facilitating Andreev pair injection. We observed enhanced conductivity in <math><mrow><mi>dI</mi> <mo>/</mo> <mi>dV</mi></mrow> </math> spectra for junction voltages smaller than the corresponding Nb superconducting gap, which vanishes as the device temperature is increased above the <math> <msub><mrow><mi>T</mi></mrow> <mrow><mi>c</mi></mrow> </msub> </math> . The position and the temperature dependence of the conductivity peaks suggest proximity effect-related phenomena explained by developed modified BTK theory. The presented results are crucial for the future implementation of proximity-based 2D hybrid devices including quantum light sources and superconducting field-effect transistors based on superconductor-semiconductor junctions.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":"9 1","pages":"36"},"PeriodicalIF":9.1,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12049272/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144029979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Advancements in 2D layered material memristors: unleashing their potential beyond memory 二维层状材料忆阻器的进展：释放其超越记忆的潜力

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-12-21 DOI: 10.1038/s41699-024-00522-4

Kiran A. Nirmal, Dhananjay D. Kumbhar, Arul Varman Kesavan, Tukaram D. Dongale, Tae Geun Kim

引用次数: 0

Memristors based on two-dimensional h-BN materials: synthesis, mechanism, optimization and application 基于二维 h-BN 材料的晶体管：合成、机理、优化和应用

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-12-19 DOI: 10.1038/s41699-024-00519-z

Shaojie Zhang, Ye Tao, Shiwei Qin, Dong Li, Kunkun Cao, Lin Lv, Guokun Ma, Yiheng Rao, Houzhao Wan, Wang Hao

引用次数: 0

First-principles study of the magneto-Raman effect in van der Waals layered magnets 范德华层状磁体中磁拉曼效应的第一性原理研究

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-12-19 DOI: 10.1038/s41699-024-00515-3

Xiangru Kong, Panchapakesan Ganesh, Liangbo Liang

引用次数: 0

Revisiting the origin of non-volatile resistive switching in MoS2 atomristor 二硫化钼原子电阻器非易失性电阻开关的起源

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-12-05 DOI: 10.1038/s41699-024-00518-0

Asif A. Shah, Aadil Bashir Dar, Mayank Shrivastava

{"title":"Revisiting the origin of non-volatile resistive switching in MoS2 atomristor","authors":"Asif A. Shah, Aadil Bashir Dar, Mayank Shrivastava","doi":"10.1038/s41699-024-00518-0","DOIUrl":"10.1038/s41699-024-00518-0","url":null,"abstract":"Recently, Non-Volatile Resistive Switching (NVRS) has been demonstrated in Metal-monolayer MoS2-Metal atomristors. While experiments based on Au metal report the origin of NVRS to be extrinsic, caused by the Au atom adsorption into sulfur vacancies, however, more recently molecular dynamics based on reactive forcefield (ReaxFF) suggest that both monolayer and multilayer MoS2 can also host intrinsic non-volatile resistive states whereby an S atom at a monosulfur vacancy (parent state) pops into the molybdenum plane (popped state) under applied out-of-plane electric field. Our rigorous computations based on Density Functional Theory (DFT) and M3GNet (deep learned forcefield) to carry out structural relaxations and molecular dynamics reveal that such a popped state is unstable and does not represent any intrinsic non-volatile resistive state. This is in contrast with the ReaxFF used in previous studies which inaccurately describes the Potential Energy Surface (PES) of MoS2 around the popped state. More importantly, Au atom adsorbed at a sulfur vacancy in MoS2 atomristors represents a stable non-volatile resistive state which is in excellent agreement with earlier experiment. Furthermore, it is observed that the local heating generated around the adsorbed Au atom in low resistive state leads to cycle-to-cycle variability in MoS2 atomristors.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-9"},"PeriodicalIF":9.1,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00518-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0