二维层状材料忆阻器的进展：释放其超越记忆的潜力

IF 9.1 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

npj 2D Materials and Applications Pub Date : 2024-12-21 DOI:10.1038/s41699-024-00522-4

Kiran A. Nirmal, Dhananjay D. Kumbhar, Arul Varman Kesavan, Tukaram D. Dongale, Tae Geun Kim

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引用次数: 0

摘要

二维（2D）材料的可扩展性降低到单个单层，为高速，节能，可扩展的记忆电阻器提供了令人兴奋的前景。这篇综述强调了基于二维材料的忆阻器的发展及其在内存之外的潜在应用，包括神经形态、内存、传感器和复杂计算。本综述还涵盖了推进这些材料和技术的潜在挑战和未来机遇，强调了2D记忆电阻器对多功能和可持续电子设备和系统的变革性影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Advancements in 2D layered material memristors: unleashing their potential beyond memory

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Advancements in 2D layered material memristors: unleashing their potential beyond memory

The scalability of two-dimensional (2D) materials down to a single monolayer offers exciting prospects for high-speed, energy-efficient, scalable memristors. This review highlights the development of 2D material-based memristors and potential applications beyond memory, including neuromorphic, in-memory, in-sensor, and complex computing. This review also encompasses potential challenges and future opportunities for advancing these materials and technologies, underscoring the transformative impact of 2D memristors on versatile and sustainable electronic devices and systems.

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来源期刊

npj 2D Materials and Applications Engineering-Mechanics of Materials

CiteScore

14.50

自引率

2.10%

发文量

审稿时长

15 weeks

期刊介绍： npj 2D Materials and Applications publishes papers on the fundamental behavior, synthesis, properties and applications of existing and emerging 2D materials. By selecting papers with the potential for impact, the journal aims to facilitate the transfer of the research of 2D materials into wide-ranging applications.