npj 2D Materials and Applications最新文献_第10页

Charge-density wave associated with higher-order Fermi-surface nesting in monolayer VS2 单层VS_2中与高阶费米表面嵌套相关的电荷密度波

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2023-05-02 DOI: 10.1038/s41699-023-00395-z

Tappei Kawakami, Katsuaki Sugawara, Hirofumi Oka, Kosuke Nakayama, Ken Yaegashi, Seigo Souma, Takashi Takahashi, Tomoteru Fukumura, Takafumi Sato

{"title":"Charge-density wave associated with higher-order Fermi-surface nesting in monolayer VS2","authors":"Tappei Kawakami, Katsuaki Sugawara, Hirofumi Oka, Kosuke Nakayama, Ken Yaegashi, Seigo Souma, Takashi Takahashi, Tomoteru Fukumura, Takafumi Sato","doi":"10.1038/s41699-023-00395-z","DOIUrl":"10.1038/s41699-023-00395-z","url":null,"abstract":"Fermi-surface (FS) nesting originating from Peierls’ idea of electronic instabilities in one-dimensional materials is a key concept to stabilize charge-density wave (CDW), whereas its applicability to two-dimensional (2D) materials is under intensive debate. Here we report unusual CDW associated with the higher-order FS nesting in monolayer 2D VS2. Angle-resolved photoemission spectroscopy and scanning tunneling microscopy uncovered stripe CDW with $$sqrt {21} R10.9^circ times sqrt 3 R30^circ$$ periodicity together with an energy-gap opening on the entire FS. We suggest that this CDW involves the higher-order FS-nesting vector 2q twice larger than that of the normal one (q), as supported by the anomalies in the calculated phonon dispersion and electronic susceptibility. The present results suggest that the cooperation of q and 2q nesting leads to the fully gapped CDW state unlike the case of conventional single q nesting which produces a partial gap, pointing to an intriguing mechanism of CDW transition.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-9"},"PeriodicalIF":9.7,"publicationDate":"2023-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-023-00395-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46250347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Author Correction: Unveiling the complex structure-property correlation of defects in 2D materials based on high throughput datasets 作者更正:基于高通量数据集揭示二维材料中缺陷的复杂结构-性能相关性

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2023-04-28 DOI: 10.1038/s41699-023-00397-x

Pengru Huang, Ruslan Lukin, Maxim Faleev, Nikita Kazeev, Abdalaziz Rashid Al-Maeeni, Daria V. Andreeva, Andrey Ustyuzhanin, Alexander Tormasov, A. H. Castro Neto, Kostya S. Novoselov

引用次数: 0

High Chern number van der Waals magnetic topological multilayers MnBi2Te4/hBN 高Chern数范德华磁性拓扑多层膜MnBi_2Te_4/hBN

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2023-04-27 DOI: 10.1038/s41699-023-00396-y

Mihovil Bosnar, Alexandra Yu. Vyazovskaya, Evgeniy K. Petrov, Evgueni V. Chulkov, Mikhail M. Otrokov

{"title":"High Chern number van der Waals magnetic topological multilayers MnBi2Te4/hBN","authors":"Mihovil Bosnar, Alexandra Yu. Vyazovskaya, Evgeniy K. Petrov, Evgueni V. Chulkov, Mikhail M. Otrokov","doi":"10.1038/s41699-023-00396-y","DOIUrl":"10.1038/s41699-023-00396-y","url":null,"abstract":"Chern insulators are two-dimensional magnetic topological materials that conduct electricity along their edges via the one-dimensional chiral modes. The number of these modes is a topological invariant called the first Chern number C that defines the quantized Hall conductance as Sxy = Ce2/h. Increasing C is pivotal for the realization of low-power-consumption topological electronics, but there has been no clear-cut solution to this problem so far, with the majority of existing Chern insulators showing C = 1. Here, by using state-of-the-art theoretical methods, we propose an efficient approach for the realization of the high-C state in MnBi2Te4/hBN van der Waals multilayer heterostructures. We show that a stack of n MnBi2Te4 films with C = 1 intercalated by hBN monolayers gives rise to a high Chern number state with C = n, characterized by n chiral edge modes. This state can be achieved both under the external magnetic field and without it, both cases leading to the quantized Hall conductance Sxy = Ce2/h. Our results, therefore, pave the way to practical high-C quantized Hall systems.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-8"},"PeriodicalIF":9.7,"publicationDate":"2023-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-023-00396-y.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49090606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Moiré straintronics: a universal platform for reconfigurable quantum materials 应变电子学:可重构量子材料的通用平台

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2023-04-18 DOI: 10.1038/s41699-023-00382-4

M. Kögl, P. Soubelet, M. Brotons-Gisbert, A. V. Stier, B. D. Gerardot, J. J. Finley

{"title":"Moiré straintronics: a universal platform for reconfigurable quantum materials","authors":"M. Kögl, P. Soubelet, M. Brotons-Gisbert, A. V. Stier, B. D. Gerardot, J. J. Finley","doi":"10.1038/s41699-023-00382-4","DOIUrl":"10.1038/s41699-023-00382-4","url":null,"abstract":"Large-scale two-dimensional (2D) moiré superlattices are driving a revolution in designer quantum materials. The electronic interactions in these superlattices, strongly dependent on the periodicity and symmetry of the moiré pattern, critically determine the emergent properties and phase diagrams. To date, the relative twist angle between two layers has been the primary tuning parameter for a given choice of constituent crystals. Here, we establish strain as a powerful mechanism to in situ modify the moiré periodicity and symmetry. We develop an analytically exact mathematical description for the moiré lattice under arbitrary in-plane heterostrain acting on any bilayer structure. We demonstrate the ability to fine-tune the moiré lattice near critical points, such as the magic angle in bilayer graphene, or fully reconfigure the moiré lattice symmetry beyond that imposed by the unstrained constituent crystals. Due to this unprecedented simultaneous control over the strength of electronic interactions and lattice symmetry, 2D heterostrain provides a powerful platform to engineer, tune, and probe strongly correlated moiré materials.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-9"},"PeriodicalIF":9.7,"publicationDate":"2023-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-023-00382-4.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42185381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Twist-tunable polaritonic nanoresonators in a van der Waals crystal 范德华晶体中的扭曲可调谐极性纳米谐振器

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2023-04-10 DOI: 10.1038/s41699-023-00387-z

O. G. Matveeva, A. I. F. Tresguerres-Mata, R. V. Kirtaev, K. V. Voronin, J. Taboada-Gutiérrez, C. Lanza, J. Duan, J. Martín-Sánchez, V. S. Volkov, P. Alonso-González, A. Y. Nikitin

{"title":"Twist-tunable polaritonic nanoresonators in a van der Waals crystal","authors":"O. G. Matveeva, A. I. F. Tresguerres-Mata, R. V. Kirtaev, K. V. Voronin, J. Taboada-Gutiérrez, C. Lanza, J. Duan, J. Martín-Sánchez, V. S. Volkov, P. Alonso-González, A. Y. Nikitin","doi":"10.1038/s41699-023-00387-z","DOIUrl":"10.1038/s41699-023-00387-z","url":null,"abstract":"Optical nanoresonators are key building blocks in various nanotechnological applications (e.g., spectroscopy) due to their ability to effectively confine light at the nanoscale. Recently, nanoresonators based on phonon polaritons (PhPs)—light coupled to lattice vibrations—in polar crystals (e.g., SiC, or h-BN) have attracted much attention due to their strong field confinement, high quality factors, and their potential to enhance the photonic density of states at mid-infrared (mid-IR) frequencies, where numerous molecular vibrations reside. Here, we introduce a new class of mid-IR nanoresonators that not only exhibit the extraordinary properties previously reported, but also incorporate a new degree of freedom: twist tuning, i.e., the possibility of controlling their spectral response by simply rotating the constituent material. To achieve this result, we place a pristine slab of the van der Waals (vdW) α-MoO3 crystal, which supports in-plane hyperbolic PhPs, on an array of metallic ribbons. This sample design based on electromagnetic engineering, not only allows the definition of α-MoO3 nanoresonators with low losses (quality factors, Q, up to 200), but also enables a broad spectral tuning of the polaritonic resonances (up to 32 cm−1, i.e., up to ~6 times their full width at half maximum, FWHM ~5 cm−1) by a simple in-plane rotation of the same slab (from 0 to 45°). These results open the door to the development of tunable and low-loss IR nanotechnologies, fundamental requirements for their implementation in molecular sensing, emission or photodetection applications.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-7"},"PeriodicalIF":9.7,"publicationDate":"2023-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-023-00387-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48007259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Tailoring the dielectric screening in WS2–graphene heterostructures WS_2–石墨烯异质结构中介电屏蔽的定制

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2023-04-08 DOI: 10.1038/s41699-023-00394-0

David Tebbe, Marc Schütte, Kenji Watanabe, Takashi Taniguchi, Christoph Stampfer, Bernd Beschoten, Lutz Waldecker

{"title":"Tailoring the dielectric screening in WS2–graphene heterostructures","authors":"David Tebbe, Marc Schütte, Kenji Watanabe, Takashi Taniguchi, Christoph Stampfer, Bernd Beschoten, Lutz Waldecker","doi":"10.1038/s41699-023-00394-0","DOIUrl":"10.1038/s41699-023-00394-0","url":null,"abstract":"The environment contributes to the screening of Coulomb interactions in two-dimensional semiconductors. This can potentially be exploited to tailor material properties as well as for sensing applications. Here, we investigate the tuning of the band gap and the exciton binding energy in the two-dimensional semiconductor WS2 via the external dielectric screening. Embedding WS2 in van der Waals heterostructures with graphene and hBN spacers of thicknesses between one and 16 atomic layers, we experimentally determine both energies as a function of the WS2-to-graphene interlayer distance and the charge carrier density in graphene. We find that the modification to the band gap as well as the exciton binding energy are well described by a one-over-distance dependence, with a significant effect remaining at several nanometers distance, at which the two layers are electrically well isolated. This observation is explained by a screening arising from an image charge induced by the graphene layer. Furthermore, we find that the effectiveness of graphene in screening Coulomb interactions in nearby WS2 depends on its doping level and can therefore be controlled via the electric field effect. We determine that, at room temperature, it is modified by approximately 20% for charge carrier densities of 2 × 1012 cm−2.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-7"},"PeriodicalIF":9.7,"publicationDate":"2023-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-023-00394-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46483269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Insulator–metal transition in CrSiTe3 triggered by structural distortion under pressure 受压下结构变形引发的CrSiTe_3绝缘子-金属过渡

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2023-04-07 DOI: 10.1038/s41699-023-00389-x

J. L. Musfeldt, D. G. Mandrus, Z. Liu

{"title":"Insulator–metal transition in CrSiTe3 triggered by structural distortion under pressure","authors":"J. L. Musfeldt, D. G. Mandrus, Z. Liu","doi":"10.1038/s41699-023-00389-x","DOIUrl":"10.1038/s41699-023-00389-x","url":null,"abstract":"van der Waals solids are well known to host remarkable phase diagrams with competing phases, unusual energy transfer processes, and elusive states of matter. Among this class of materials, chalcogenides have emerged as the most flexible and relevant platforms for unraveling charge–structure–function relationships. In order to explore the properties of complex chalcogenides under external stimuli, we measured the far infrared spectroscopic response of CrSiTe3 under extreme pressure–temperature conditions. Analysis of the 368 cm−1 Si–Te stretching mode and the manner in which it is screened by the closure of the indirect gap reveals that the insulator–metal transition takes place immediately after the structural phase transition—once the mixed phase aspect of the lattice distortion is resolved. At the same time, the two-phase region associated with the structural transition widens with decreasing temperature, and the slope of the insulator–metal transition under pressure is consistent with increasing entropy. These trends completely revise the character of the temperature–pressure phase diagram as well as the relationship between the structural and insulator–metal transitions, leading to a critical nexus of activity that may hide a quantum critical point and allow superconductivity to emerge.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-6"},"PeriodicalIF":9.7,"publicationDate":"2023-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-023-00389-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42101543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Mechanistic insights into the deformation and degradation of a 2D metal organic framework 对2D金属有机框架变形和降解的机械学见解

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2023-04-01 DOI: 10.1038/s41699-023-00391-3

Hafeesudeen Sahabudeen, Qiang Zhang, Yue Liu, Matthias Heuchel, Rainhard Machatschek

{"title":"Mechanistic insights into the deformation and degradation of a 2D metal organic framework","authors":"Hafeesudeen Sahabudeen, Qiang Zhang, Yue Liu, Matthias Heuchel, Rainhard Machatschek","doi":"10.1038/s41699-023-00391-3","DOIUrl":"10.1038/s41699-023-00391-3","url":null,"abstract":"2D metal-organic frameworks (2D-MOFs) materials can be subjected to various modes of mechanical stresses and strains in a wide range of applications, for which their mechanical properties are critical to reach practical implementations. Despite the rapid developments focused on the preparation of ultrathin 2D-MOF materials, very little is known about their mechanical and degradation behavior. Here, we use the established 2D-MOF PdTCPP-Cu (NAFS-13) as model system, to introduce the Langmuir–Blodgett (LB) technique, combined with interfacial rheology, as a novel in situ method for direct determination of the in-plane Young’s modulus by simultaneously measuring the 2D shear and compression moduli of a 2D-MOF formed at the air-water interface. Furthermore, it can be used to evaluate mechanistic models describing the degradation kinetics of 2D MOFs. To provide a deeper understanding of the factors that determine the Young’s modulus observed in such a set up, we carried out nanoindentation measurements and molecular dynamics (MD) simulations based on classical force fields. This protocol allows us to gain mechanistic insights into the impact of structural defects, temperature, tensile and compression stress on the Young’s modulus of 2D MOFs.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-10"},"PeriodicalIF":9.7,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-023-00391-3.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48124887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improved strain engineering of 2D materials by adamantane plasma polymer encapsulation 金刚烷等离子体聚合物封装改进二维材料应变工程

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2023-03-30 DOI: 10.1038/s41699-023-00393-1

Felix Carrascoso, Hao Li, Jose M. Obrero-Perez, Francisco J. Aparicio, Ana Borras, Joshua O. Island, Angel Barranco, Andres Castellanos-Gomez

引用次数: 0

Graphene/MoS2/SiOx memristive synapses for linear weight update 用于线性权重更新的石墨烯/MoS_2/SiO_x忆阻突触

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2023-03-29 DOI: 10.1038/s41699-023-00388-y

Adithi Krishnaprasad, Durjoy Dev, Mashiyat Sumaiya Shawkat, Ricardo Martinez-Martinez, Molla Manjurul Islam, Hee-Suk Chung, Tae-Sung Bae, Yeonwoong Jung, Tania Roy

{"title":"Graphene/MoS2/SiOx memristive synapses for linear weight update","authors":"Adithi Krishnaprasad, Durjoy Dev, Mashiyat Sumaiya Shawkat, Ricardo Martinez-Martinez, Molla Manjurul Islam, Hee-Suk Chung, Tae-Sung Bae, Yeonwoong Jung, Tania Roy","doi":"10.1038/s41699-023-00388-y","DOIUrl":"10.1038/s41699-023-00388-y","url":null,"abstract":"Memristors for neuromorphic computing have gained prominence over the years for implementing synapses and neurons due to their nano-scale footprint and reduced complexity. Several demonstrations show two-dimensional (2D) materials as a promising platform for the realization of transparent, flexible, ultra-thin memristive synapses. However, unsupervised learning in a spiking neural network (SNN) facilitated by linearity and symmetry in synaptic weight update has not been explored thoroughly using the 2D materials platform. Here, we demonstrate that graphene/MoS2/SiOx/Ni synapses exhibit ideal linearity and symmetry when subjected to identical input pulses, which is essential for their role in online training of neural networks. The linearity in weight update holds for a range of pulse width, amplitude and number of applied pulses. Our work illustrates that the mechanism of switching in MoS2-based synapses is through conductive filaments governed by Poole-Frenkel emission. We demonstrate that the graphene/MoS2/SiOx/Ni synapses, when integrated with a MoS2-based leaky integrate-and-fire neuron, can control the spiking of the neuron efficiently. This work establishes 2D MoS2 as a viable platform for all-memristive SNNs.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-8"},"PeriodicalIF":9.7,"publicationDate":"2023-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-023-00388-y.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48321301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1