npj 2D Materials and Applications最新文献_第9页

Van der Waals enabled formation and integration of ultrathin high-κ dielectrics on 2D semiconductors 范德华二维半导体上超薄高κ电介质的形成与集成

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-02-08 DOI: 10.1038/s41699-024-00443-2

Matej Sebek, Zeng Wang, Norton Glen West, Ming Yang, Darren Chi Jin Neo, Xiaodi Su, Shijie Wang, Jisheng Pan, Nguyen Thi Kim Thanh, Jinghua Teng

{"title":"Van der Waals enabled formation and integration of ultrathin high-κ dielectrics on 2D semiconductors","authors":"Matej Sebek, Zeng Wang, Norton Glen West, Ming Yang, Darren Chi Jin Neo, Xiaodi Su, Shijie Wang, Jisheng Pan, Nguyen Thi Kim Thanh, Jinghua Teng","doi":"10.1038/s41699-024-00443-2","DOIUrl":"10.1038/s41699-024-00443-2","url":null,"abstract":"A thin dielectric layer is an important constituent element in 2D materials-based electronics and photonics. Current methods of using hexagonal boron nitride (hBN) and direct deposition of dielectric layer induce either high leakage current or unintentional doping and defect. Here we report a technique for damaging free integration of dielectric layer to form high-quality van der Waals (vdW) heterostructure. The dielectric layer is grown by atomic layer deposition (ALD) on 2D materials and then deterministically transferred on the target 2D material. The much weaker binding energy between the ALD dielectric and the 2D materials enables the growth and exfoliation of the atomically thin dielectrics, which is confirmed by the X-ray photoelectron spectroscopy analyses and the density function theory calculations. The effectiveness of the technology is proven by the Raman and photoluminescence measurement on WS2 monolayer protected by the dielectric film through harsh plasma treatment. Furthermore, a 2D materials-based MOSFET is constructed as a demonstration of the viability of the technology for electronic device applications. The method produces flat surfaces and clean interfaces and would greatly benefit electronic and photonic applications as encapsulation or high-κ gate dielectric.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-9"},"PeriodicalIF":9.7,"publicationDate":"2024-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00443-2.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139710642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors 工艺对 300 mm FAB MoS2 场效应晶体管稳定性和可靠性的影响

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-02-02 DOI: 10.1038/s41699-024-00445-0

Yu. Yu. Illarionov, A. Karl, Q. Smets, B. Kaczer, T. Knobloch, L. Panarella, T. Schram, S. Brems, D. Cott, I. Asselberghs, T. Grasser

{"title":"Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors","authors":"Yu. Yu. Illarionov, A. Karl, Q. Smets, B. Kaczer, T. Knobloch, L. Panarella, T. Schram, S. Brems, D. Cott, I. Asselberghs, T. Grasser","doi":"10.1038/s41699-024-00445-0","DOIUrl":"10.1038/s41699-024-00445-0","url":null,"abstract":"Recent advances in fabricating field-effect transistors with MoS2 and other related two-dimensional (2D) semiconductors have inspired the industry to begin with the integration of these emerging technologies into FAB-compatible process flows. Just like in the lab research on 2D devices performed in the last decade, focus during development is typically put on pure technology-related issues, such as low-temperature growth methods of large-area 2D films on target substrates, damage-free transfer from sacrificial substrates and growth of top-gate oxides. With maturing technology, the problem of stability limitations caused by oxide traps is gradually coming into focus now. Thus, here we report an in-depth analysis of hysteresis and bias-temperature instabilities for MoS2 FETs fabricated using a 300 mm FAB-compatible process. By performing a comprehensive statistical analysis on devices with top gate lengths ranging between 18 nm and 10 μm, we demonstrate that aggressive scaling results in additional stability problems, likely caused by defective edges of the scaled top gates, in particular at higher operation temperatures. These are important insights for understanding and addressing the stability limitations in future nanoscale 2D FETs produced using FAB process lines.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-7"},"PeriodicalIF":9.7,"publicationDate":"2024-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00445-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139676865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Stochastic resonance in 2D materials based memristors 基于二维材料的忆阻器中的随机共振

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-01-30 DOI: 10.1038/s41699-024-00444-1

J. B. Roldán, A. Cantudo, J. J. Torres, D. Maldonado, Yaqing Shen, Wenwen Zheng, Yue Yuan, M. Lanza

{"title":"Stochastic resonance in 2D materials based memristors","authors":"J. B. Roldán, A. Cantudo, J. J. Torres, D. Maldonado, Yaqing Shen, Wenwen Zheng, Yue Yuan, M. Lanza","doi":"10.1038/s41699-024-00444-1","DOIUrl":"10.1038/s41699-024-00444-1","url":null,"abstract":"Stochastic resonance is an essential phenomenon in neurobiology, it is connected to the constructive role of noise in the signals that take place in neuronal tissues, facilitating information communication, memory, etc. Memristive devices are known to be the cornerstone of hardware neuromorphic applications since they correctly mimic biological synapses in many different facets, such as short/long-term plasticity, spike-timing-dependent plasticity, pair-pulse facilitation, etc. Different types of neural networks can be built with circuit architectures based on memristive devices (mostly spiking neural networks and artificial neural networks). In this context, stochastic resonance is a critical issue to analyze in the memristive devices that will allow the fabrication of neuromorphic circuits. We do so here with h-BN based memristive devices from different perspectives. It is found that the devices we have fabricated and measured clearly show stochastic resonance behaviour. Consequently, neuromorphic applications can be developed to account for this effect, that describes a key issue in neurobiology with strong computational implications.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-6"},"PeriodicalIF":9.7,"publicationDate":"2024-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00444-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139643963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spin-order-dependent magneto-elastic coupling in two dimensional antiferromagnetic MnPSe3 observed through Raman spectroscopy 通过拉曼光谱观察二维反铁磁性 MnPSe3 中自旋阶依赖性磁弹性耦合

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-01-27 DOI: 10.1038/s41699-024-00441-4

Daniel J. Gillard, Daniel Wolverson, Oscar M. Hutchings, Alexander I. Tartakovskii

{"title":"Spin-order-dependent magneto-elastic coupling in two dimensional antiferromagnetic MnPSe3 observed through Raman spectroscopy","authors":"Daniel J. Gillard, Daniel Wolverson, Oscar M. Hutchings, Alexander I. Tartakovskii","doi":"10.1038/s41699-024-00441-4","DOIUrl":"10.1038/s41699-024-00441-4","url":null,"abstract":"Layered antiferromagnetic materials have recently emerged as an intriguing subset of the two-dimensional family providing a highly accessible regime with prospects for layer-number-dependent magnetism. Furthermore, transition metal phosphorus trichalcogenides, MPX3 (M = transition metal; X = chalcogen) provide a platform on which to investigate fundamental interactions between magnetic and lattice degrees of freedom and further explore the developing fields of spintronics and magnonics. Here, we use a combination of temperature dependent Raman spectroscopy and density functional theory to explore magnetic-ordering-dependent interactions between the manganese spin degree of freedom and lattice vibrations of the non-magnetic sub-lattice via a Kramers-Anderson super-exchange pathway in both bulk, and few-layer, manganese phosphorus triselenide (MnPSe3). We observe a nonlinear temperature-dependent shift of phonon modes predominantly associated with the non-magnetic sub-lattice, revealing their non-trivial spin-phonon coupling below the Néel temperature at 74 K, allowing us to extract mode-specific spin-phonon coupling constants.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-8"},"PeriodicalIF":9.7,"publicationDate":"2024-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00441-4.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139590546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Strain tuning MoO3 vibrational and electronic properties 应变调整 MoO3 的振动和电子特性

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-01-24 DOI: 10.1038/s41699-024-00442-3

Sergio Puebla, Hao Li, Onur Çakıroğlu, Estrella Sánchez-Viso, C. Munuera, Roberto D’Agosta, Andres Castellanos-Gomez

{"title":"Strain tuning MoO3 vibrational and electronic properties","authors":"Sergio Puebla, Hao Li, Onur Çakıroğlu, Estrella Sánchez-Viso, C. Munuera, Roberto D’Agosta, Andres Castellanos-Gomez","doi":"10.1038/s41699-024-00442-3","DOIUrl":"10.1038/s41699-024-00442-3","url":null,"abstract":"This work investigates the vibrational and electrical properties of molybdenum trioxide (α-MoO3) upon tensile strain applied along different crystal directions. Using a three-point bending setup in combination with Raman spectroscopy, we report measurements of a blueshift of the Raman modes when uniaxial tensile strain is applied along the a- and c-axis to this material. Furthermore, the electrical measurements reveal an increase in resistance with strain applied along both in-plane directions. The findings from the uniaxial strain and Raman spectroscopy measurements are further confirmed by ab-initio calculations. This study provides valuable insights into the mechanical and vibrational properties of α-MoO3 and its potential use in several applications. This study contributes to the growing body of knowledge on the properties of α-MoO3 and lays the foundation for further exploration of its potential applications. Given MoO3 holding the natural hyperbolic phonon polaritons, attracting significant research interest, this study has the potential to arouse the curiosity of the scientific community.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-9"},"PeriodicalIF":9.7,"publicationDate":"2024-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00442-3.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139556768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Non-planar graphene directly synthesized on intracavity optical microresonators for GHz repetition rate mode-locked lasers 在腔内光学微谐振器上直接合成非平面石墨烯，用于 GHz 重复率模式锁定激光器

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-01-12 DOI: 10.1038/s41699-024-00440-5

Oleksiy Kovalchuk, Sungjae Lee, Hyowon Moon, Andrea M. Armani, Yong-Won Song

{"title":"Non-planar graphene directly synthesized on intracavity optical microresonators for GHz repetition rate mode-locked lasers","authors":"Oleksiy Kovalchuk, Sungjae Lee, Hyowon Moon, Andrea M. Armani, Yong-Won Song","doi":"10.1038/s41699-024-00440-5","DOIUrl":"10.1038/s41699-024-00440-5","url":null,"abstract":"Generation of high-speed laser pulses is essential for sustaining today’s global, hyper-connected society. One approach for achieving high spectral and temporal purity is to combine optical nonlinear materials with spectral filtering devices. In this work, a graphene-coated microresonator integrates a nonlinear material and a spectral filtering platform into a single device, creating a tunable GHz repetition rate mode-locked fiber laser. The graphene is directly synthesized on the non-planar surface of microresonator, resulting in a uniform, conformal coating with minimal optical loss in the device. The whispering gallery modes of the resonator filter the propagating modes, and the remaining modes from the interaction with graphene lock their relative phases to form short pulses at an elevated repetition rate relying on inter-modal spectral distance. Additionally, by leveraging the photo-thermal effect, all-optical tuning of the repetition rate is demonstrated. With optimized device parameters, repetition rates of 150 GHz and tuning of 6.1 GHz are achieved.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-9"},"PeriodicalIF":9.7,"publicationDate":"2024-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00440-5.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139431108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Prediction of BiS2-type pnictogen dichalcogenide monolayers for optoelectronics 用于光电子学的 BiS2 型双钙钛矿单层的预测

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-01-12 DOI: 10.1038/s41699-023-00439-4

José D. Mella, Muralidhar Nalabothula, Francisco Muñoz, Karin M. Rabe, Ludger Wirtz, Sobhit Singh, Aldo H. Romero

引用次数: 0

Raman scattering excitation in monolayers of semiconducting transition metal dichalcogenides 半导体过渡金属二卤化物单层中的拉曼散射激发

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-01-10 DOI: 10.1038/s41699-023-00438-5

M. Zinkiewicz, M. Grzeszczyk, T. Kazimierczuk, M. Bartos, K. Nogajewski, W. Pacuski, K. Watanabe, T. Taniguchi, A. Wysmołek, P. Kossacki, M. Potemski, A. Babiński, M. R. Molas

{"title":"Raman scattering excitation in monolayers of semiconducting transition metal dichalcogenides","authors":"M. Zinkiewicz, M. Grzeszczyk, T. Kazimierczuk, M. Bartos, K. Nogajewski, W. Pacuski, K. Watanabe, T. Taniguchi, A. Wysmołek, P. Kossacki, M. Potemski, A. Babiński, M. R. Molas","doi":"10.1038/s41699-023-00438-5","DOIUrl":"10.1038/s41699-023-00438-5","url":null,"abstract":"Raman scattering excitation (RSE) is an experimental technique in which the spectrum is made up by sweeping the excitation energy when the detection energy is fixed. We study the low-temperature (T = 5 K) RSE spectra measured on four high quality monolayers (ML) of semiconducting transition metal dichalcogenides (S-TMDs), i.e. MoS2, MoSe2, WS2, and WSe2, encapsulated in hexagonal BN. The outgoing resonant conditions of Raman scattering reveal an extraordinary intensity enhancement of the phonon modes, which results in extremely rich RSE spectra. The obtained spectra are composed not only of Raman-active peaks, i.e. in-plane E $${}^{{prime} }$$ and out-of-plane A $${}_{1}^{{prime} }$$ , but the appearance of 1st, 2nd, and higher-order phonon modes is recognized. The intensity profiles of the A $${}_{1}^{{prime} }$$ modes in the investigated MLs resemble the emissions due to neutral excitons measured in the corresponding PL spectra for the outgoing type of resonant Raman scattering conditions. Furthermore, for the WSe2 ML, the A $${}_{1}^{{prime} }$$ mode was observed when the incoming light was in resonance with the neutral exciton line. The strength of the exciton-phonon coupling (EPC) in S-TMD MLs strongly depends on the type of their ground excitonic state, i.e. bright or dark, resulting in different shapes of the RSE spectra. Our results demonstrate that RSE spectroscopy is a powerful technique for studying EPC in S-TMD MLs.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-7"},"PeriodicalIF":9.7,"publicationDate":"2024-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-023-00438-5.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139407002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electronic transport in graphene with out-of-plane disorder 平面外无序石墨烯中的电子传输

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-01-05 DOI: 10.1038/s41699-023-00437-6

Yifei Guan, Oleg V. Yazyev

{"title":"Electronic transport in graphene with out-of-plane disorder","authors":"Yifei Guan, Oleg V. Yazyev","doi":"10.1038/s41699-023-00437-6","DOIUrl":"10.1038/s41699-023-00437-6","url":null,"abstract":"Real-world samples of graphene often exhibit various types of out-of-plane disorder–ripples, wrinkles and folds–introduced at the stage of growth and transfer processes. These complex out-of-plane defects resulting from the interplay between self-adhesion of graphene and its bending rigidity inevitably lead to the scattering of charge carriers thus affecting the electronic transport properties of graphene. We address the ballistic charge-carrier transmission across the models of out-of-plane defects using tight-binding and density functional calculations while fully taking into account lattice relaxation effects. The observed transmission oscillations in commensurate graphene wrinkles are attributed to the interference between intra- and interlayer transport channels, while the incommensurate wrinkles show vanishing backscattering and retain the transport properties of flat graphene. The suppression of backscattering reveals the crucial role of lattice commensuration in the electronic transmission. Our results provide guidelines to controlling the transport properties of graphene in presence of this ubiquitous type of disorder.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-9"},"PeriodicalIF":9.7,"publicationDate":"2024-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-023-00437-6.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139102714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Disorder-induced bulk photovoltaic effect in a centrosymmetric van der Waals material 中心对称范德华材料的无序诱导体光伏效应

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2023-11-21 DOI: 10.1038/s41699-023-00435-8

Cheol-Yeon Cheon, Zhe Sun, Jiang Cao, Juan Francisco Gonzalez Marin, Mukesh Tripathi, Kenji Watanabe, Takashi Taniguchi, Mathieu Luisier, Andras Kis

{"title":"Disorder-induced bulk photovoltaic effect in a centrosymmetric van der Waals material","authors":"Cheol-Yeon Cheon, Zhe Sun, Jiang Cao, Juan Francisco Gonzalez Marin, Mukesh Tripathi, Kenji Watanabe, Takashi Taniguchi, Mathieu Luisier, Andras Kis","doi":"10.1038/s41699-023-00435-8","DOIUrl":"10.1038/s41699-023-00435-8","url":null,"abstract":"Sunlight is widely seen as one of the most abundant forms of renewable energy, with photovoltaic cells based on pn junctions being the most commonly used platform attempting to harness it. Unlike in conventional photovoltaic cells, the bulk photovoltaic effect (BPVE) allows for the generation of photocurrent and photovoltage in a single material without the need to engineer a pn junction and create a built-in electric field, thus offering a solution that can potentially exceed the Shockley–Queisser efficiency limit. However, it requires a material with no inversion symmetry and is therefore absent in centrosymmetric materials. Here, we demonstrate that breaking the inversion symmetry by structural disorder can induce BPVE in ultrathin PtSe2, a centrosymmetric semiconducting van der Waals material. Homogenous illumination of defective PtSe2 by linearly and circularly polarized light results in a photoresponse termed as linear photogalvanic effect (LPGE) and circular photogalvanic effect (CPGE), which is mostly absent in the pristine crystal. First-principles calculations reveal that LPGE originates from Se vacancies that act as asymmetric scattering centers for the photo-generated electron-hole pairs. Our work emphasizes the importance of defects to induce photovoltaic functionality in centrosymmetric materials and shows how the range of materials suitable for light sensing and energy-harvesting applications can be extended.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-8"},"PeriodicalIF":9.7,"publicationDate":"2023-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-023-00435-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138537006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0