npj 2D Materials and Applications最新文献_第9页

Biodegradable albumen dielectrics for high-mobility MoS2 phototransistors 用于高移动性 MoS2 光电晶体管的可生物降解白蛋白电介质

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2023-11-03 DOI: 10.1038/s41699-023-00436-7

Thomas Pucher, Pablo Bastante, Federico Parenti, Yong Xie, Elisabetta Dimaggio, Gianluca Fiori, Andres Castellanos-Gomez

{"title":"Biodegradable albumen dielectrics for high-mobility MoS2 phototransistors","authors":"Thomas Pucher, Pablo Bastante, Federico Parenti, Yong Xie, Elisabetta Dimaggio, Gianluca Fiori, Andres Castellanos-Gomez","doi":"10.1038/s41699-023-00436-7","DOIUrl":"10.1038/s41699-023-00436-7","url":null,"abstract":"This work demonstrates the fabrication and characterization of single-layer MoS2 field-effect transistors using biodegradable albumen (chicken eggwhite) as gate dielectric. By introducing albumen as an insulator for MoS2 transistors high carrier mobilities (up to ~90 cm2 V−1 s−1) are observed, which is remarkably superior to that obtained with commonly used SiO2 dielectric which we attribute to ionic gating due to the formation of an electric double layer in the albumen MoS2 interface. In addition, the investigated devices are characterized upon illumination, observing responsivities of 4.5 AW−1 (operated in photogating regime) and rise times as low as 52 ms (operated in photoconductivity regime). The presented study reveals the combination of albumen with van der Waals materials for prospective biodegradable and biocompatible optoelectronic device applications. Furthermore, the demonstrated universal fabrication process can be easily adopted to fabricate albumen-based devices with any other van der Waals material.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-6"},"PeriodicalIF":9.7,"publicationDate":"2023-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-023-00436-7.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135819026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Transfer-free rapid growth of 2-inch wafer-scale patterned graphene as transparent conductive electrodes and heat spreaders for GaN LEDs 无转移快速生长 2 英寸晶圆级图案化石墨烯，作为 GaN LED 的透明导电电极和散热器

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2023-10-19 DOI: 10.1038/s41699-023-00434-9

Fangzhu Xiong, Jie Sun, Penghao Tang, Weiling Guo, Yibo Dong, Zaifa Du, Shiwei Feng, Xuan Li

{"title":"Transfer-free rapid growth of 2-inch wafer-scale patterned graphene as transparent conductive electrodes and heat spreaders for GaN LEDs","authors":"Fangzhu Xiong, Jie Sun, Penghao Tang, Weiling Guo, Yibo Dong, Zaifa Du, Shiwei Feng, Xuan Li","doi":"10.1038/s41699-023-00434-9","DOIUrl":"10.1038/s41699-023-00434-9","url":null,"abstract":"A technique for the transfer-free growth of 2-inch wafer-scale patterned graphene directly on GaN LED epilayers is introduced. High-quality graphene as transparent electrodes and heat spreaders is synthesized directly on GaN by PECVD at only 600 °C deposition temperature and within 3 min growth time. Co acts as both the catalyst for graphene growth and the dry etching mask for GaN mesas, which greatly improves the efficiency of the semiconductor device process. Elegantly, the graphene growth is in accordance with the shape of Co, which offers a lithography-free patterning technique of the graphene. Afterward, using our penetration etching method through the PMMA and graphene layers, the Co is peacefully removed, and in-situ Ohmic contact is achieved between the graphene and p-GaN where the contact resistivity is only 0.421 Ω cm2. The graphene sheet resistance is as low as 631.2 Ω sq−1. The device is also superior to the counterpart graphene-free LED in terms of heat spreading behavior, as evidenced by the lower junction temperature and thermal resistance. Most importantly, the developed technique produces graphene with excellent performance and is intrinsically more scalable, controllable, and semiconductor industry compatible than traditionally transferred graphene.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-7"},"PeriodicalIF":9.7,"publicationDate":"2023-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-023-00434-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135730402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tunable strain and bandgap in subcritical-sized MoS2 nanobubbles 亚临界尺寸 MoS2 纳米气泡中的可调应变和带隙

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2023-10-05 DOI: 10.1038/s41699-023-00432-x

Michele Gastaldo, Javier Varillas, Álvaro Rodríguez, Matěj Velický, Otakar Frank, Martin Kalbáč

引用次数: 0

Two-dimensional tellurium-based diodes for RF applications 射频应用中的二维碲基二极管

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2023-09-27 DOI: 10.1038/s41699-023-00433-w

Abdelrahman M. Askar, Paula Palacios, Francisco Pasadas, Mohamed Saeed, Mohammad Reza Mohammadzadeh, Renato Negra, Michael M. Adachi

{"title":"Two-dimensional tellurium-based diodes for RF applications","authors":"Abdelrahman M. Askar, Paula Palacios, Francisco Pasadas, Mohamed Saeed, Mohammad Reza Mohammadzadeh, Renato Negra, Michael M. Adachi","doi":"10.1038/s41699-023-00433-w","DOIUrl":"10.1038/s41699-023-00433-w","url":null,"abstract":"The research of two-dimensional (2D) Tellurium (Te) or tellurene is thriving to address current challenges in emerging thin-film electronic and optoelectronic devices. However, the study of 2D-Te-based devices for high-frequency applications is still lacking in the literature. This work presents a comprehensive study of two types of radio frequency (RF) diodes based on 2D-Te flakes and exploits their distinct properties in two RF applications. First, a metal-insulator-semiconductor (MIS) structure is employed as a nonlinear device in a passive RF mixer, where the achieved conversion loss at 2.5 GHz and 5 GHz is as low as 24 dB and 29 dB, respectively. Then, a metal-semiconductor (MS) diode is tested as a zero-bias millimeter-wave power detector and reaches an outstanding linear-in-dB dynamic range over 40 dB, while having voltage responsivities as high as 257 V ⋅ W−1 at 1 GHz (up to 1 V detected output voltage) and 47 V ⋅ W−1 at 2.5 GHz (up to 0.26 V detected output voltage). These results show superior performance compared to other 2D material-based devices in a much more mature technological phase. Thus, the authors believe that this work demonstrates the potential of 2D-Te as a promising material for devices in emerging high-frequency electronics.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-11"},"PeriodicalIF":9.7,"publicationDate":"2023-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-023-00433-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135535617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical signatures of Förster-induced energy transfer in organic/TMD heterostructures 有机/TMD 异质结构中福斯特诱导能量转移的光学特征

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2023-09-21 DOI: 10.1038/s41699-023-00430-z

Joshua J. P. Thompson, Marina Gerhard, Gregor Witte, Ermin Malic

引用次数: 0

Ultra-low power neuromorphic obstacle detection using a two-dimensional materials-based subthreshold transistor 使用基于二维材料的亚阈值晶体管实现超低功耗神经形态障碍物检测

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2023-09-18 DOI: 10.1038/s41699-023-00422-z

Kartikey Thakar, Bipin Rajendran, Saurabh Lodha

{"title":"Ultra-low power neuromorphic obstacle detection using a two-dimensional materials-based subthreshold transistor","authors":"Kartikey Thakar, Bipin Rajendran, Saurabh Lodha","doi":"10.1038/s41699-023-00422-z","DOIUrl":"10.1038/s41699-023-00422-z","url":null,"abstract":"Accurate, timely and selective detection of moving obstacles is crucial for reliable collision avoidance in autonomous robots. The area- and energy-inefficiency of CMOS-based spiking neurons for obstacle detection can be addressed through the reconfigurable, tunable and low-power operation capabilities of emerging two-dimensional (2D) materials-based devices. We present an ultra-low power spiking neuron built using an electrostatically tuned dual-gate transistor with an ultra-thin and generic 2D material channel. The 2D subthreshold transistor (2D-ST) is carefully designed to operate under low-current subthreshold regime. Carrier transport has been modeled via over-the-barrier thermionic and Fowler–Nordheim contact barrier tunneling currents over a wide range of gate and drain biases. Simulation of a neuron circuit designed using the 2D-ST with 45 nm CMOS technology components shows high energy efficiency of ~3.5 pJ per spike and biomimetic class-I as well as oscillatory spiking. It also demonstrates complex neuronal behaviors such as spike-frequency adaptation and post-inhibitory rebound that are crucial for dynamic visual systems. Lobula giant movement detector (LGMD) is a collision-detecting biological neuron found in locusts. Our neuron circuit can generate LGMD-like spiking behavior and detect obstacles at an energy cost of <100 pJ. Further, it can be reconfigured to distinguish between looming and receding objects with high selectivity. We also show that the spiking neuron circuit can function reliably with ±40% variation in the 2D-ST current as well as up to 3 dB signal-to-noise ratio with additive white Gaussian noise in the input synaptic current.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-10"},"PeriodicalIF":9.7,"publicationDate":"2023-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-023-00422-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135103089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Graphene versus concentrated aqueous electrolytes: the role of the electrochemical double layer in determining the screening length of an electrolyte 石墨烯与浓水性电解质：电化学双电层在决定电解质屏蔽长度中的作用

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2023-09-13 DOI: 10.1038/s41699-023-00431-y

Shayan Angizi, Lea Hong, Xianxuan Huang, P. Ravi Selvaganapathy, Peter Kruse

{"title":"Graphene versus concentrated aqueous electrolytes: the role of the electrochemical double layer in determining the screening length of an electrolyte","authors":"Shayan Angizi, Lea Hong, Xianxuan Huang, P. Ravi Selvaganapathy, Peter Kruse","doi":"10.1038/s41699-023-00431-y","DOIUrl":"10.1038/s41699-023-00431-y","url":null,"abstract":"Understanding the performance of graphene devices in contact with highly concentrated aqueous electrolytes is key to integrating graphene into next-generation devices operating in sea water environments, biosensors, and high-density energy production/storage units. Despite significant efforts toward interpreting the structure of the electrochemical double layer at high concentrations, the interface between graphene-based materials and concentrated aqueous solutions has remained vaguely described. In this study, we demonstrate the use of graphene-based chemiresistors as a technique to indirectly quantify the experimental screening length of concentrated electrolytes that could clarify the interpretation of electrochemical measurements conducted at low ionic strength. We report a breakdown of the Debye–Hückel theory in the proximity of graphene surfaces at lower concentrations (10–50 mM) than previously reported for other systems, depending on cation size, dissolved oxygen concentration, and degree of graphene defectivity.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-9"},"PeriodicalIF":9.7,"publicationDate":"2023-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-023-00431-y.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135734365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Prolonged dephasing time of ensemble of moiré-trapped interlayer excitons in WSe2-MoSe2 heterobilayers WSe2-MoSe2 异质层中被莫伊里俘获的层间激子集合的去相时间延长

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2023-09-11 DOI: 10.1038/s41699-023-00429-6

Mehmet Atıf Durmuş, Kaan Demiralay, Muhammad Mansoor Khan, Şeyma Esra Atalay, Ibrahim Sarpkaya

{"title":"Prolonged dephasing time of ensemble of moiré-trapped interlayer excitons in WSe2-MoSe2 heterobilayers","authors":"Mehmet Atıf Durmuş, Kaan Demiralay, Muhammad Mansoor Khan, Şeyma Esra Atalay, Ibrahim Sarpkaya","doi":"10.1038/s41699-023-00429-6","DOIUrl":"10.1038/s41699-023-00429-6","url":null,"abstract":"The moiré superlattices of transition metal dichalcogenide heterobilayers have a pronounced effect on the optical properties of interlayer excitons (IXs) and have been intensively studied in recent years. However, the impact of moiré potentials on the temporal coherence of the IXs has not yet been investigated in detail. Here, we systematically investigate the coherence properties of both the ensemble of delocalized and the ensemble of localized IXs trapped in moiré potentials of the hexagonal boron nitride encapsulated WSe2-MoSe2 heterostructures. Our low-temperature first-order correlation measurements show that prolonged T2 dephasing times with values up to 730 fs can be obtained from the ensemble of localized IXs under moderate pump powers. We observed up to almost a five-fold increase over the values we obtained from the delocalized IXs, while more than two-fold over the previously reported values of T2 ~ 300 fs from the delocalized IXs. The prolonged values of T2 dephasing times and narrow photoluminescence (PL) linewidths for the ensemble of moiré-trapped IXs compared to delocalized one indicate that dephasing mechanisms caused by exciton-low energy acoustic phonon and exciton-exciton scattering are significantly suppressed due to the presence of localization potentials. Our pump power-dependent T2 results show that ultra-long dephasing times can be expected if the dephasing time measurements are performed with the narrow photoluminescence emission line of a single moiré-trapped IX at a low pump power regime. The prolonged values of IX dephasing times would be critical for the applications of quantum information science and the development of two-dimensional material-based nanolasers.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-8"},"PeriodicalIF":9.7,"publicationDate":"2023-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-023-00429-6.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135980929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tailoring exciton dynamics in TMDC heterobilayers in the ultranarrow gap-plasmon regime 在超窄带间隙-等离子体机制中定制 TMDC 异质层中的激子动力学

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2023-09-11 DOI: 10.1038/s41699-023-00428-7

Mahfujur Rahaman, Gwangwoo Kim, Kyung Yeol Ma, Seunguk Song, Hyeon Suk Shin, Deep Jariwala

{"title":"Tailoring exciton dynamics in TMDC heterobilayers in the ultranarrow gap-plasmon regime","authors":"Mahfujur Rahaman, Gwangwoo Kim, Kyung Yeol Ma, Seunguk Song, Hyeon Suk Shin, Deep Jariwala","doi":"10.1038/s41699-023-00428-7","DOIUrl":"10.1038/s41699-023-00428-7","url":null,"abstract":"Control of excitons in transition metal dichalcogenides (TMDCs) and their heterostructures is fundamentally interesting for tailoring light-matter interactions and exploring their potential applications in high-efficiency optoelectronic and nonlinear photonic devices. While both intra- and interlayer excitons in TMDCs have been heavily studied, their behavior in the quantum tunneling regime, in which the TMDC or its heterostructure is optically excited and concurrently serves as a tunnel junction barrier, remains unexplored. Here, using the degree of freedom of a metallic probe in an atomic force microscope, we investigated both intralayer and interlayer excitons dynamics in TMDC heterobilayers via locally controlled junction current in a finely tuned sub-nanometer tip-sample cavity. Our tip-enhanced photoluminescence measurements reveal a significantly different exciton-quantum plasmon coupling for intralayer and interlayer excitons due to different orientation of the dipoles of the respective e-h pairs. Using a steady-state rate equation fit, we extracted field gradients, radiative and nonradiative relaxation rates for excitons in the quantum tunneling regime with and without junction current. Our results show that tip-induced radiative (nonradiative) relaxation of intralayer (interlayer) excitons becomes dominant in the quantum tunneling regime due to the Purcell effect. These findings have important implications for near-field probing of excitonic materials in the strong-coupling regime.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-7"},"PeriodicalIF":9.7,"publicationDate":"2023-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-023-00428-7.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135984335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ionotronic WS2 memtransistors for 6-bit storage and neuromorphic adaptation at high temperature 用于 6 位存储和神经形态高温适应的 Ionotronic WS2 晶体管

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2023-09-09 DOI: 10.1038/s41699-023-00427-8

Sameer Kumar Mallik, Roshan Padhan, Mousam Charan Sahu, Gopal K. Pradhan, Prasana Kumar Sahoo, Saroj Prasad Dash, Satyaprakash Sahoo

{"title":"Ionotronic WS2 memtransistors for 6-bit storage and neuromorphic adaptation at high temperature","authors":"Sameer Kumar Mallik, Roshan Padhan, Mousam Charan Sahu, Gopal K. Pradhan, Prasana Kumar Sahoo, Saroj Prasad Dash, Satyaprakash Sahoo","doi":"10.1038/s41699-023-00427-8","DOIUrl":"10.1038/s41699-023-00427-8","url":null,"abstract":"Inspired by massive parallelism, an increase in internet-of-things devices, robust computation, and Big-data, the upsurge research in building multi-bit mem-transistors is ever-augmenting with different materials, mechanisms, and state-of-the-art architectures. Herein, we demonstrate monolayer WS2-based functional mem-transistor devices which address nonvolatility and synaptic operations at high temperature. The ionotronic memory devices based on WS2 exhibit reverse hysteresis with memory windows larger than 25 V, and extinction ratio greater than 106. The mem-transistors show stable retention and endurance greater than 100 sweep cycles and 400 pulse cycles in addition to 6-bit (64 distinct nonvolatile storage levels) pulse-programmable memory features ranging over six orders of current magnitudes (10−12–10−6 A). The origin of the multi-bit states is attributed to the carrier dynamics under electrostatic doping fluctuations induced by mobile ions, which is illustrated by employing a fingerprint mechanism including band-bending pictures. The credibility of all the storage states is confirmed by obtaining reliable signal-to-noise ratios. We also demonstrate key neuromorphic behaviors, such as synaptic plasticity, near linear potentiation, and depression, rendering it suitable for successful implementation in high temperature neuromorphic computing. Furthermore, artificial neural network simulations based on the conductance weight update characteristics of the proposed ionotronic mem-transistors are performed to explore the potency for accurate image recognition. Our findings showcase a different class of thermally aided memories based on 2D semiconductors unlocking promising avenues for high temperature memory applications in demanding electronics and forthcoming neuromorphic computing technologies.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-12"},"PeriodicalIF":9.7,"publicationDate":"2023-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-023-00427-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136107292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0