npj 2D Materials and Applications最新文献_第2页

Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts 在具有范德华接触的高迁移率 ReS2 光晶体管中实现近乎无障碍传输

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-11-05 DOI: 10.1038/s41699-024-00507-3

Shubhrasish Mukherjee, Gaurab Samanta, Md Nur Hasan, Shubhadip Moulick, Ruta Kulkarni, Kenji Watanabe, Takashi Taniguchi, Arumugum Thamizhavel, Debjani Karmakar, Atindra Nath Pal

{"title":"Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts","authors":"Shubhrasish Mukherjee, Gaurab Samanta, Md Nur Hasan, Shubhadip Moulick, Ruta Kulkarni, Kenji Watanabe, Takashi Taniguchi, Arumugum Thamizhavel, Debjani Karmakar, Atindra Nath Pal","doi":"10.1038/s41699-024-00507-3","DOIUrl":"10.1038/s41699-024-00507-3","url":null,"abstract":"Focusing on Rhenium disulfide (ReS2), a group VII transition metal di-chalcogenides (TMDC), being a promising contender system for future nanoelectronics and optoelectronics, here, we present an innovative pathway to experimentally achieve an almost barrier-free contact for the ReS2 field effect transistors (FETs) by using few layered graphene as contact electrodes, further supported by comparative first-principles analysis. Such barrier-free contacts enable the observation of metal-to-insulator transition with enhanced room temperature carrier mobility up to 25 cm2/Vs, linear Ids-Vds characteristic down to 80 K, along with the reduction of 1/f noise by more than two orders of magnitude. We further demonstrate a highly responsive gate- tunable phototransistor (R > 106 A/W) at an illumination wavelength of 633 nm. This work demonstrates a straightforward strategy to unlock the full potential of ReS2 for CMOS compatible future electronic and optoelectronic devices.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-9"},"PeriodicalIF":9.1,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00507-3.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142579815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Revealing polytypism in 2D boron nitride with UV photoluminescence 用紫外光发光揭示二维氮化硼的多型性

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-11-05 DOI: 10.1038/s41699-024-00511-7

Jakub Iwański, Krzysztof P. Korona, Mateusz Tokarczyk, Grzegorz Kowalski, Aleksandra K. Dąbrowska, Piotr Tatarczak, Izabela Rogala, Marta Bilska, Maciej Wójcik, Sławomir Kret, Anna Reszka, Bogdan J. Kowalski, Song Li, Anton Pershin, Adam Gali, Johannes Binder, Andrzej Wysmołek

{"title":"Revealing polytypism in 2D boron nitride with UV photoluminescence","authors":"Jakub Iwański, Krzysztof P. Korona, Mateusz Tokarczyk, Grzegorz Kowalski, Aleksandra K. Dąbrowska, Piotr Tatarczak, Izabela Rogala, Marta Bilska, Maciej Wójcik, Sławomir Kret, Anna Reszka, Bogdan J. Kowalski, Song Li, Anton Pershin, Adam Gali, Johannes Binder, Andrzej Wysmołek","doi":"10.1038/s41699-024-00511-7","DOIUrl":"10.1038/s41699-024-00511-7","url":null,"abstract":"Boron nitride exhibits various crystal structures. The subgroup of layered boron nitrides includes several polytypes such as hexagonal (hBN), Bernal (bBN), and rhombohedral (rBN) BN. The latter two are non-centrosymmetric, potentially leading to piezoelectric or ferroelectric properties. A key challenge related to the polytypism of sp2-bonded BN is distinguishing between these polytypes. We demonstrate that the optical response of the 4.1-eV defect can be used to differentiate hBN from rBN. Photoluminescence and cathodoluminescence measurements on samples grown by metalorganic vapor phase epitaxy (MOVPE) show a zero-phonon line at 4.096 eV for hBN and 4.143 eV for rBN. Our calculations confirm that the photoluminescence originates from a carbon dimer, CBCN (C2), which is sensitive to the local environments of different polytypes. We demonstrate that different polytypic compositions of hBN and rBN can be achieved by MOVPE, which could pave the way for future applications in large-area van der Waals heterostructures.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-9"},"PeriodicalIF":9.1,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00511-7.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

2D materials-based 3D integration for neuromorphic hardware 基于二维材料的神经形态硬件三维集成

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-11-04 DOI: 10.1038/s41699-024-00509-1

Seung Ju Kim, Hyeon-Ji Lee, Chul-Ho Lee, Ho Won Jang

引用次数: 0

Optical control of multiple resistance levels in graphene for memristic applications 光学控制石墨烯中的多级电阻，实现记忆应用

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-10-29 DOI: 10.1038/s41699-024-00503-7

Harsimran Kaur Mann, Mainak Mondal, Vivek Sah, Kenji Watanabe, Takashi Taniguchi, Akshay Singh, Aveek Bid

引用次数: 0

Mapping the energy-momentum dispersion of hBN excitons and hybrid plasmons in hBN-WSe2 heterostructures 绘制 hBN-WSe2 异质结构中 hBN 激子和混合质子的能量-动量频散图

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-10-26 DOI: 10.1038/s41699-024-00500-w

Hannah C. Nerl, Juan Pablo Guerrero-Felipe, Ana M. Valencia, Khairi Fahad Elyas, Katja Höflich, Christoph T. Koch, Caterina Cocchi

{"title":"Mapping the energy-momentum dispersion of hBN excitons and hybrid plasmons in hBN-WSe2 heterostructures","authors":"Hannah C. Nerl, Juan Pablo Guerrero-Felipe, Ana M. Valencia, Khairi Fahad Elyas, Katja Höflich, Christoph T. Koch, Caterina Cocchi","doi":"10.1038/s41699-024-00500-w","DOIUrl":"10.1038/s41699-024-00500-w","url":null,"abstract":"Heterostructures obtained by combining two-dimensional (2D) sheets are widely investigated as a platform for designing new materials with customised characteristics. Transition metal dichalcogenides (TMDCs) are often combined with hexagonal boron nitride (hBN) to enhance their excitonic resonances. However, little is known about how stacking affects excitons and plasmons in TMDCs or their mutual interactions. Here, we combine momentum-resolved electron energy-loss spectroscopy with first-principles calculations to study the energy-momentum dispersion of plasmons in multi-layer WSe2-hBN heterostructures as well as in their isolated components. The dispersion of the high-momentum excitons of hBN, alone and in combination with WSe2, is mapped across the entire Brillouin zone. Signatures of hybridisation in the plasmon resonances and some of the excitons suggest that the contribution of hBN cannot be neglected when interpreting the response of such a heterostructure. The consequences of using hBN as an encapsulant for TMDCs are also discussed.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-11"},"PeriodicalIF":9.1,"publicationDate":"2024-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00500-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142519199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Unraveling the influence of defects in Janus MoSSe and Janus alloys MoS2(1−x)Se2x 揭示 Janus MoSSe 和 Janus 合金 MoS2(1-x)Se2x 中缺陷的影响

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-10-11 DOI: 10.1038/s41699-024-00504-6

Jennifer Schmeink, Jens Osterfeld, Osamah Kharsah, Stephan Sleziona, Marika Schleberger

引用次数: 0

Author Correction: Mechanically-tunable bandgap closing in 2D graphene phononic crystals 作者更正：二维石墨烯声波晶体中可机械调控的带隙闭合

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-10-10 DOI: 10.1038/s41699-024-00505-5

Jan N. Kirchhof, Kirill I. Bolotin

引用次数: 0

Chalcogen and halogen surface termination coverage in MXenes—structure, stability, and properties 二甲苯中的查耳根和卤素表面终止覆盖层--结构、稳定性和特性

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-10-02 DOI: 10.1038/s41699-024-00502-8

Martin Dahlqvist, Johanna Rosen

{"title":"Chalcogen and halogen surface termination coverage in MXenes—structure, stability, and properties","authors":"Martin Dahlqvist, Johanna Rosen","doi":"10.1038/s41699-024-00502-8","DOIUrl":"10.1038/s41699-024-00502-8","url":null,"abstract":"MXenes are a diverse family of two-dimensional (2D) transition metal carbides, nitrides, and carbonitrides. They can be synthesized through both top-down approaches, such as selective etching of A-layers from MAX phases using acids or molten salts, and bottom-up approaches, such as direct synthesis using chemical vapor deposition. However, the degree of the surface termination coverage depends on the synthesis route and is one key parameter for controlling its properties. This study focuses on halogen- and chalcogen-terminated MXenes, particularly M2CTx where M = Ti, Zr, V, Nb, Ta, and T = S, Se, Te, Cl, Br, I, and with surface termination coverage ranging from 100% (ideal, x = 2) to 50% (x = 1). The incorporation of oxygen on vacant termination sites was also evaluated. Using density functional theory (DFT) calculations, we investigated the structural, electronic, and mechanical properties of these MXenes. Our findings reveal that non-ideal termination coverage (x < 2) is more favorable for MXenes terminated with a larger size of T, such as Ti2CBrx, Nb2CClx, and Ta2CClx, and leads to mixed termination sites and lower binding energies. A reduced binding energy may facilitate delamination into single sheets, however, too low termination coverage may also cause structural collapse. Electronic properties showed an increased number of states at the Fermi level under non-ideal coverage, potentially enhancing the conductivity. Mechanically, we find the moduli of MXenes to be comparable to other 2D materials, such as transition metal chalcogenides and hexagonal boron nitride, indicating their suitability for applications requiring flexibility and durability. This study underscores the potential of tailoring MXene properties through precise control of termination coverage and composition, paving the way for enhanced application-specific performance.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-13"},"PeriodicalIF":9.1,"publicationDate":"2024-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00502-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142377213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Unraveling the electronic structure and magnetic transition evolution across monolayer, bilayer, and multilayer ferromagnetic Fe3GeTe2 揭示单层、双层和多层铁磁性 Fe3GeTe2 的电子结构和磁转变演化

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-09-30 DOI: 10.1038/s41699-024-00499-0

R. Roemer, D. H. D. Lee, S. Smit, X. Zhang, S. Godin, V. Hamza, T. Jian, J. Larkin, H. Shin, C. Liu, M. Michiardi, G. Levy, Z. Zhang, R. J. Green, C. Kim, D. Muller, A. Damascelli, M. J. Han, K. Zou

{"title":"Unraveling the electronic structure and magnetic transition evolution across monolayer, bilayer, and multilayer ferromagnetic Fe3GeTe2","authors":"R. Roemer, D. H. D. Lee, S. Smit, X. Zhang, S. Godin, V. Hamza, T. Jian, J. Larkin, H. Shin, C. Liu, M. Michiardi, G. Levy, Z. Zhang, R. J. Green, C. Kim, D. Muller, A. Damascelli, M. J. Han, K. Zou","doi":"10.1038/s41699-024-00499-0","DOIUrl":"10.1038/s41699-024-00499-0","url":null,"abstract":"Two-dimensional (2D) van der Waals (vdW) magnets have sparked widespread attention due to their potential in spintronic applications as well as in fundamental physics. Ferromagnetic vdW compound Fe3GeTe2 (FGT) and its Ga variants have garnered significant interest due to their itinerant magnetism, correlated states, and high magnetic transition temperature. Experimental studies have demonstrated the tunability of FGT’s Curie temperature, TC, through adjustments in quintuple layer numbers (QL) and carrier concentrations, n. However, the underlying mechanism remains elusive. In this study, we employ molecular beam epitaxy (MBE) to synthesize 2D FGT films down to 1 QL with precise layer control, facilitating an exploration of the band structure and the evolution of itinerant carrier density. Angle-resolved photoemission spectroscopy (ARPES) reveals significant band structure changes at the ultra-thin limit, while first-principles calculations elucidate the band evolution from 1 QL to bulk, largely governed by interlayer coupling. Additionally, we find that n is intrinsically linked to the number of QL and temperature, with a critical value triggering the magnetic phase transition. Our findings underscore the pivotal role of band structure and itinerant electrons in governing magnetic phase transitions in such 2D vdW magnetic materials.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-8"},"PeriodicalIF":9.1,"publicationDate":"2024-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00499-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142377215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Phonon transport manipulation in TiSe2 via reversible charge density wave melting 通过可逆电荷密度波熔化实现 TiSe2 中的声子传输操纵

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-09-30 DOI: 10.1038/s41699-024-00501-9

Martí Raya-Moreno, Claudio Cazorla, Enric Canadell, Riccardo Rurali

引用次数: 0