npj 2D Materials and Applications最新文献_第2页

Brightening dark excitons and trions in systems with a Mexican-hat energy dispersion: example of InSe. 用墨西哥帽能量色散使系统中的暗激子和三角子变亮：InSe的例子。

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2025-01-01 Epub Date: 2025-07-21 DOI: 10.1038/s41699-025-00570-4

Lewis J Burke, Mark T Greenaway, Joseph J Betouras

引用次数: 0

Oriented 2D Ruddlesden-Popper metal halides by pulsed laser deposition. 脉冲激光沉积定向二维Ruddlesden-Popper金属卤化物。

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2025-01-01 Epub Date: 2025-06-12 DOI: 10.1038/s41699-025-00571-3

Junia S Solomon, Nada Mrkyvkova, Vojtĕch Kliner, Tatiana Soto-Montero, Ismael Fernandez-Guillen, Martin Ledinský, Pablo P Boix, Peter Siffalovic, Monica Morales-Masis

{"title":"Oriented 2D Ruddlesden-Popper metal halides by pulsed laser deposition.","authors":"Junia S Solomon, Nada Mrkyvkova, Vojtĕch Kliner, Tatiana Soto-Montero, Ismael Fernandez-Guillen, Martin Ledinský, Pablo P Boix, Peter Siffalovic, Monica Morales-Masis","doi":"10.1038/s41699-025-00571-3","DOIUrl":"10.1038/s41699-025-00571-3","url":null,"abstract":"Two-dimensional (2D) Ruddlesden-Popper (RP) metal halides present unique and tunable properties. However, direct and oriented synthesis is challenging due to low formation energies that lead to rapid, uncontrolled growth during solution-based processing. Here, we report the solvent-free growth of oriented n = 1 (PEA)2PbI4 RP films by pulsed laser deposition (PLD). In situ photoluminescence (PL) during deposition reveals the formation of the n = 1 phase at the early stages of growth. X-ray diffraction (XRD) and grazing-incidence wide-angle scattering (GIWAXS) confirm a single oriented n = 1 phase, independent of the substrate. Co-localized spatially resolved PL and AFM further validate the conformal growth. While oriented growth is substrate-independent, film stability is not. (PEA)2PbI4 films grown on strained epitaxial MAPbI3 remain stable for over 184 days without any sign of cation exchange. This work highlights the potential of PLD for direct, room-temperature synthesis of 2D (PEA)2PbI4 RP films and stable 2D/3D heterostructures.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":"9 1","pages":"50"},"PeriodicalIF":9.1,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12162342/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144302595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Layer-by-layer assembly yields thin graphene films with near theoretical conductivity. 一层接一层的组装产生了接近理论导电性的薄石墨烯薄膜。

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2025-01-01 Epub Date: 2025-01-08 DOI: 10.1038/s41699-025-00525-9

Oran Cassidy, Kevin Synnatschke, Jose M Munuera, Cian Gabbett, Tian Carey, Luke Doolan, Eoin Caffrey, Jonathan N Coleman

引用次数: 0

Elucidating the role of stacking faults in TlGaSe₂ on its thermoelectric properties. TlGaSe2中层错对其热电性能的影响。

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2025-01-01 Epub Date: 2025-06-06 DOI: 10.1038/s41699-025-00569-x

Tigran Simonian, Ahin Roy, Akash Bajaj, Rui Dong, Zheng Lei, Zdeněk Sofer, Stefano Sanvito, Valeria Nicolosi

{"title":"Elucidating the role of stacking faults in TlGaSe2 on its thermoelectric properties.","authors":"Tigran Simonian, Ahin Roy, Akash Bajaj, Rui Dong, Zheng Lei, Zdeněk Sofer, Stefano Sanvito, Valeria Nicolosi","doi":"10.1038/s41699-025-00569-x","DOIUrl":"10.1038/s41699-025-00569-x","url":null,"abstract":"Thermoelectric materials are of great interest for heat energy harvesting applications. One such promising material is TlGaSe2, a 2D-layered, p-type semiconducting ternary chalcogenide. Recent reports show it can be processed as a thin film, opening the door for large-scale commercialization. However, TlGaSe2 is prone to stacking faults along the [001] stacking direction and their role in its thermoelectric properties has not yet been understood. Herein, TlGaSe2 is investigated via (scanning) transmission electron microscopy and first-principles calculations. Stacking faults are found to be present throughout the material, as density functional theory calculations reveal a low stacking fault energy of ~12 mJ m-2. Electron transport calculations show an enhancement of thermoelectric power factors when stacking faults are present. This implies the presence of stacking faults is key to the material's excellent thermoelectric properties along the [001] stacking direction, which can be further enhanced by doping the material to carrier concentrations of ~1019 cm-3.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":"9 1","pages":"46"},"PeriodicalIF":9.1,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12143981/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144248914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ab initio simulation of spin-charge qubits based on bilayer graphene-WSe₂ quantum dots. 基于双层石墨烯- wse2量子点的自旋电荷量子比特从头算模拟。

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2025-01-01 Epub Date: 2025-06-11 DOI: 10.1038/s41699-025-00568-y

Huaiyu Ge, Peter Koopmann, Filip Mrcarica, Otto T P Schmidt, Ilan Bouquet, Mauro Dossena, Mathieu Luisier, Jiang Cao

引用次数: 0

Homoepitaxial growth of isotopically enriched h¹⁰BN layers on h¹¹BN crystals by high-temperature molecular beam epitaxy. 高温分子束外延法在h11BN晶体上生长同位素富集的h10BN层。

IF 8.8 2区材料科学

npj 2D Materials and Applications Pub Date : 2025-01-01 Epub Date: 2025-11-19 DOI: 10.1038/s41699-025-00619-4

Jonathan Bradford, Amy F M Collins, Tin S Cheng, Jialiang Shen, James Kerfoot, Graham A Rance, Jiahan Li, Christopher J Mellor, Peter H Beton, Guillaume Cassabois, Siyuan Dai, James H Edgar, Sergei V Novikov

{"title":"Homoepitaxial growth of isotopically enriched h10BN layers on h11BN crystals by high-temperature molecular beam epitaxy.","authors":"Jonathan Bradford, Amy F M Collins, Tin S Cheng, Jialiang Shen, James Kerfoot, Graham A Rance, Jiahan Li, Christopher J Mellor, Peter H Beton, Guillaume Cassabois, Siyuan Dai, James H Edgar, Sergei V Novikov","doi":"10.1038/s41699-025-00619-4","DOIUrl":"10.1038/s41699-025-00619-4","url":null,"abstract":"Isotope-enriched bulk hexagonal boron nitride (hBN) crystals have enhanced properties that improve the performance of nanophotonic and quantum technologies. Developing methods to deposit epitaxial layers on such crystals enables the exciting prospects of producing isotope-engineered hBN layers and heterostructures. Here, we demonstrate the homoepitaxial growth of hBN with phase-separated 10B and 11B isotopes by high-temperature molecular beam epitaxy (HT-MBE). Controlled nucleation, improved surface uniformity, and step-flow growth of an h10BN epilayer were achieved by etching the h11BN bulk crystals with molecular hydrogen. The alignment of the h10BN epilayer and host h11BN lattices was confirmed by lattice-resolved atomic force microscopy. Micro-Raman spectroscopy and scattering-type scanning near-field optical microscopy show that the bulk h11BN and h10BN epilayer have distinct phonon energies, with no intermixing of the van der Waals layers, thus enabling the different boron isotopes to be spatially separated in the heterostructure. This work demonstrates the potential of HT-MBE to produce isotopic heterostructures of hBN to advance future nanophotonic and quantum technologies.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":"9 1","pages":"98"},"PeriodicalIF":8.8,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12629975/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145588213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hidden order revealed by light-driven Kerr rotation in Centrosymmetric bulk WSe₂. 中心对称体WSe2中光驱动Kerr旋转揭示的隐藏秩序。

IF 9.2 2区材料科学

npj 2D Materials and Applications Pub Date : 2025-01-01 Epub Date: 2025-10-29 DOI: 10.1038/s41699-025-00606-9

Emmanuele Cappelluti, Habib Rostami, Federico Cilento

{"title":"Hidden order revealed by light-driven Kerr rotation in Centrosymmetric bulk WSe2.","authors":"Emmanuele Cappelluti, Habib Rostami, Federico Cilento","doi":"10.1038/s41699-025-00606-9","DOIUrl":"10.1038/s41699-025-00606-9","url":null,"abstract":"Single-layer semiconducting transition-metal dichalcogenides, lacking point inversion symmetry, provide an efficient platform for valleytronics, where the electronic, orbital, magnetic, valley, and lattice degrees of freedom can be selectively manipulated by using polarized light. This task is, however, thought to be impeded in parent bulk compounds where the point inversion symmetry is restored. Exploiting the underlying quantum physics in bulk materials is thus one of the biggest paradigmatic challenges. Here we show that a sizable optical Kerr rotation can be efficiently generated without breaking point-inversion symmetry in a wide energy range on ultrafast timescales in bulk WSe2, by means of circularly-polarized light. We rationalize this finding as a result of the hidden spin/layer/orbital/valley order. The spectral analysis reveals distinct A-, B-, and C-exciton features, which we show to stem from a selective Pauli blocking effect on top of the hidden-order pseudospin order and of the spin Berry curvature. The Kerr response lifetime (τ ~ 500 fs), common to all the peaks, suggests that excitonic dynamics dominate over single-particle decay. The present report demonstrates that the hidden order at play in bulk centrosymmetric layered materials can stem out in macroscopical bulk features, opening the way for an effective exploitation of bulk WSe2 in novel optoelectronic and orbitronics applications.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":"9 1","pages":"89"},"PeriodicalIF":9.2,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12576942/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145431987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Imaging junctions in two-dimensional semiconductor nanosheet networks. 二维半导体纳米片网络中的成像结。

IF 8.8 2区材料科学

npj 2D Materials and Applications Pub Date : 2025-01-01 Epub Date: 2025-10-31 DOI: 10.1038/s41699-025-00609-6

Jelena Pešić, Simon Leitner, Joseph Neilson, Igor Stanković, Muhammad Zubair Khan, Dragana Tizić Matković, Adam G Kelly, Tian Carey, Jonathan Coleman, Aleksandar Matković

{"title":"Imaging junctions in two-dimensional semiconductor nanosheet networks.","authors":"Jelena Pešić, Simon Leitner, Joseph Neilson, Igor Stanković, Muhammad Zubair Khan, Dragana Tizić Matković, Adam G Kelly, Tian Carey, Jonathan Coleman, Aleksandar Matković","doi":"10.1038/s41699-025-00609-6","DOIUrl":"10.1038/s41699-025-00609-6","url":null,"abstract":"This study explores the challenges associated with translating electrical characteristics of individual two-dimensional semiconductor nanosheets into a network of partially overlapping sheets. Such systems typically suffer from high-energy barriers required to overcome the junctions formed between the adjacent nanosheets, and consequently quench the current passing through the network. We use in-operando Kelvin probe force microscopy to image electrostatic potential profiles during the operation of MoS2 nanosheet network transistors. Direct imaging of the potential drops allows us to distinguish contributions from individual nanosheets and those from junctions, correlated by the junction-related potential drops with the network morphology. A diagram-based model is developed to describe the system numerically and to estimate the current path formation probabilities. Finally, a correlation with the integral electrical characteristics of the nanosheet-based transistors is made using a robust Y-function approach. It is shown that the total junction resistance is well estimated by the proposed equivalent circiut model.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":"9 1","pages":"90"},"PeriodicalIF":8.8,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12578641/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145431908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Andreev pair injection into a transition metal dichalcogenide monolayer. Andreev对注入过渡金属二硫化物单层。

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2025-01-01 Epub Date: 2025-05-03 DOI: 10.1038/s41699-025-00553-5

D Panna, R Itzhak, A Kumar, S Bouscher, N Suleymanov, B Minkovich, Z Gan, A George, A Turchanin, I Goykhman, A Hayat

{"title":"Andreev pair injection into a transition metal dichalcogenide monolayer.","authors":"D Panna, R Itzhak, A Kumar, S Bouscher, N Suleymanov, B Minkovich, Z Gan, A George, A Turchanin, I Goykhman, A Hayat","doi":"10.1038/s41699-025-00553-5","DOIUrl":"https://doi.org/10.1038/s41699-025-00553-5","url":null,"abstract":"We demonstrate Andreev pair injection across Nb-WS2 junction evident as Andreev reflection in differential conductivity spectra below Nb critical temperature <math> <msub><mrow><mi>T</mi></mrow> <mrow><mi>c</mi></mrow> </msub> </math> . The superconducting- 2D semiconducting junction defined by a focused ion beam, shaped Nb pads, and semi-dry transfer of single layer CVD-grown WS2 crystals ensured the mechanical integrity of the 2D TMD film, reduced contamination and defects at Nb-WS2 junction, enabling the pristine study of the interface and facilitating Andreev pair injection. We observed enhanced conductivity in <math><mrow><mi>dI</mi> <mo>/</mo> <mi>dV</mi></mrow> </math> spectra for junction voltages smaller than the corresponding Nb superconducting gap, which vanishes as the device temperature is increased above the <math> <msub><mrow><mi>T</mi></mrow> <mrow><mi>c</mi></mrow> </msub> </math> . The position and the temperature dependence of the conductivity peaks suggest proximity effect-related phenomena explained by developed modified BTK theory. The presented results are crucial for the future implementation of proximity-based 2D hybrid devices including quantum light sources and superconducting field-effect transistors based on superconductor-semiconductor junctions.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":"9 1","pages":"36"},"PeriodicalIF":9.1,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12049272/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144029979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Advancements in 2D layered material memristors: unleashing their potential beyond memory 二维层状材料忆阻器的进展：释放其超越记忆的潜力

IF 9.1 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-12-21 DOI: 10.1038/s41699-024-00522-4

Kiran A. Nirmal, Dhananjay D. Kumbhar, Arul Varman Kesavan, Tukaram D. Dongale, Tae Geun Kim

引用次数: 0