在具有范德华接触的高迁移率 ReS2 光晶体管中实现近乎无障碍传输

IF 9.1 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Shubhrasish Mukherjee, Gaurab Samanta, Md Nur Hasan, Shubhadip Moulick, Ruta Kulkarni, Kenji Watanabe, Takashi Taniguchi, Arumugum Thamizhavel, Debjani Karmakar, Atindra Nath Pal
{"title":"在具有范德华接触的高迁移率 ReS2 光晶体管中实现近乎无障碍传输","authors":"Shubhrasish Mukherjee, Gaurab Samanta, Md Nur Hasan, Shubhadip Moulick, Ruta Kulkarni, Kenji Watanabe, Takashi Taniguchi, Arumugum Thamizhavel, Debjani Karmakar, Atindra Nath Pal","doi":"10.1038/s41699-024-00507-3","DOIUrl":null,"url":null,"abstract":"Focusing on Rhenium disulfide (ReS2), a group VII transition metal di-chalcogenides (TMDC), being a promising contender system for future nanoelectronics and optoelectronics, here, we present an innovative pathway to experimentally achieve an almost barrier-free contact for the ReS2 field effect transistors (FETs) by using few layered graphene as contact electrodes, further supported by comparative first-principles analysis. Such barrier-free contacts enable the observation of metal-to-insulator transition with enhanced room temperature carrier mobility up to 25 cm2/Vs, linear Ids-Vds characteristic down to 80 K, along with the reduction of 1/f noise by more than two orders of magnitude. We further demonstrate a highly responsive gate- tunable phototransistor (R > 106 A/W) at an illumination wavelength of 633 nm. This work demonstrates a straightforward strategy to unlock the full potential of ReS2 for CMOS compatible future electronic and optoelectronic devices.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-9"},"PeriodicalIF":9.1000,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00507-3.pdf","citationCount":"0","resultStr":"{\"title\":\"Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts\",\"authors\":\"Shubhrasish Mukherjee, Gaurab Samanta, Md Nur Hasan, Shubhadip Moulick, Ruta Kulkarni, Kenji Watanabe, Takashi Taniguchi, Arumugum Thamizhavel, Debjani Karmakar, Atindra Nath Pal\",\"doi\":\"10.1038/s41699-024-00507-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Focusing on Rhenium disulfide (ReS2), a group VII transition metal di-chalcogenides (TMDC), being a promising contender system for future nanoelectronics and optoelectronics, here, we present an innovative pathway to experimentally achieve an almost barrier-free contact for the ReS2 field effect transistors (FETs) by using few layered graphene as contact electrodes, further supported by comparative first-principles analysis. Such barrier-free contacts enable the observation of metal-to-insulator transition with enhanced room temperature carrier mobility up to 25 cm2/Vs, linear Ids-Vds characteristic down to 80 K, along with the reduction of 1/f noise by more than two orders of magnitude. We further demonstrate a highly responsive gate- tunable phototransistor (R > 106 A/W) at an illumination wavelength of 633 nm. This work demonstrates a straightforward strategy to unlock the full potential of ReS2 for CMOS compatible future electronic and optoelectronic devices.\",\"PeriodicalId\":19227,\"journal\":{\"name\":\"npj 2D Materials and Applications\",\"volume\":\" \",\"pages\":\"1-9\"},\"PeriodicalIF\":9.1000,\"publicationDate\":\"2024-11-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.nature.com/articles/s41699-024-00507-3.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"npj 2D Materials and Applications\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.nature.com/articles/s41699-024-00507-3\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"npj 2D Materials and Applications","FirstCategoryId":"88","ListUrlMain":"https://www.nature.com/articles/s41699-024-00507-3","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

二硫化铼(ReS2)是第七族过渡金属二钙钛矿(TMDC),是未来纳米电子学和光电子学的一个有前途的竞争系统。在此,我们提出了一种创新的途径,通过使用几层石墨烯作为接触电极,在实验中实现了 ReS2 场效应晶体管(FET)的几乎无障碍接触,并进一步得到了比较第一原理分析的支持。这种无势垒接触使我们能够观察到金属到绝缘体的转变,室温载流子迁移率提高到 25 cm2/Vs,Ids-Vds 特性线性低至 80 K,1/f 噪声降低了两个数量级以上。我们还进一步展示了在 633 纳米照明波长下的高响应栅极可调光电晶体管(R > 106 A/W)。这项工作展示了一种简单易行的策略,可将 ReS2 的全部潜力释放到 CMOS 兼容的未来电子和光电设备中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts

Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts
Focusing on Rhenium disulfide (ReS2), a group VII transition metal di-chalcogenides (TMDC), being a promising contender system for future nanoelectronics and optoelectronics, here, we present an innovative pathway to experimentally achieve an almost barrier-free contact for the ReS2 field effect transistors (FETs) by using few layered graphene as contact electrodes, further supported by comparative first-principles analysis. Such barrier-free contacts enable the observation of metal-to-insulator transition with enhanced room temperature carrier mobility up to 25 cm2/Vs, linear Ids-Vds characteristic down to 80 K, along with the reduction of 1/f noise by more than two orders of magnitude. We further demonstrate a highly responsive gate- tunable phototransistor (R > 106 A/W) at an illumination wavelength of 633 nm. This work demonstrates a straightforward strategy to unlock the full potential of ReS2 for CMOS compatible future electronic and optoelectronic devices.
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来源期刊
npj 2D Materials and Applications
npj 2D Materials and Applications Engineering-Mechanics of Materials
CiteScore
14.50
自引率
2.10%
发文量
80
审稿时长
15 weeks
期刊介绍: npj 2D Materials and Applications publishes papers on the fundamental behavior, synthesis, properties and applications of existing and emerging 2D materials. By selecting papers with the potential for impact, the journal aims to facilitate the transfer of the research of 2D materials into wide-ranging applications.
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