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2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)最新文献

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Optimization of GCIB irradiation conditions for surface activated bonding 表面活化键合的GCIB辐照条件优化
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947462
S. Ikeda, T. Sasaki, N. Toyoda
{"title":"Optimization of GCIB irradiation conditions for surface activated bonding","authors":"S. Ikeda, T. Sasaki, N. Toyoda","doi":"10.23919/LTB-3D.2017.7947462","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947462","url":null,"abstract":"Gas cluster ion beam (GCIB) was used for surface activation bonding (SAB). Since GCIB modifies only near surface, low-damage surface modification and activation are expected. In this study, Cu-Cu bonding with GCIB irradiation was selected as a preliminary study. XPS and contact angle measurement showed that surface oxide on Cu was removed efficiently by oblique incidence Ar-GCIB at 5–20 kV. Also, sequential irradiation of GCIB at normal and oblique incidence realized smooth Cu surface. After that Cu-Cu bonding strength was investigated by the tensile test.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"47 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132811095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wafer bonding using smooth titanium thin films in air atmosphere 采用光滑钛薄膜在空气气氛下进行晶圆键合
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947476
H. Azuma, E. Higurashi, Y. Kunimune, T. Suga
{"title":"Wafer bonding using smooth titanium thin films in air atmosphere","authors":"H. Azuma, E. Higurashi, Y. Kunimune, T. Suga","doi":"10.23919/LTB-3D.2017.7947476","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947476","url":null,"abstract":"Si wafers with smooth Ti thin films were contacted in air atmosphere and annealed at a range of temperatures up to 300 °C to increase the bonding strength. Root-mean-square (RMS) surface roughness of 30 nm thick electron beam evaporated Ti films on Si wafers measured by atomic force microscope (AFM) was 0.3 nm. Bonding strength measured by blade insertion test reached 1.0 J/m2. The proposed wafer bonding process has the advantage of being simple and inexpensive.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131918679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Understanding the environmental influence on semiconductor wafer bonding 了解环境对半导体晶圆键合的影响
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947477
Nagito Takehara, T. Naito, K. Tanabe
{"title":"Understanding the environmental influence on semiconductor wafer bonding","authors":"Nagito Takehara, T. Naito, K. Tanabe","doi":"10.23919/LTB-3D.2017.7947477","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947477","url":null,"abstract":"To manufacture high-performance heterostructured semiconductor devices inexpensively, we investigated the correlation among conditions of surface treatment, particle density, and bonding strength in non-cleanroom environment. We systematically examined schemes of cleaning wafers, hydrophilic / hydrophobic treatments, and conditions of bonding, and obtained strong bonds sufficient in device use.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134555198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimized ultra-thin Manganin alloy passivated fine-pitch damascene compatible Cu-Cu bonding at sub 200°C for 3D IC integration 优化超薄锰合金钝化细间距damascene兼容Cu-Cu键合在低于200°C的3D集成电路
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947431
A. Panigrahi, C. H. Kumar, Tamal Ghosh, S. Vanjari, S. Singh
{"title":"Optimized ultra-thin Manganin alloy passivated fine-pitch damascene compatible Cu-Cu bonding at sub 200°C for 3D IC integration","authors":"A. Panigrahi, C. H. Kumar, Tamal Ghosh, S. Vanjari, S. Singh","doi":"10.23919/LTB-3D.2017.7947431","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947431","url":null,"abstract":"Enhanced Cu diffusion, Cu surface passivation, and surface smoothness at the bonding interface are the key requirements for high quality Copper-Copper (Cu-Cu) thermocompression bonding. In our previous work, we have demonstrated the usage of optimized Manganin metal alloy of 3 nm not only helps in passivating the Cu surface even at high temperature (<300°C) but also reduces the surface roughness to about 0.8 nm which substantially led to high quality Cu-Cu bonding. In this paper, we demonstrate an ultra-fine pitch Cu-Cu thermocompression bonding using an optimized ultra-thin damascene compatible Manganin metal alloy passivation. This engineering surface passivation approach has led to high quality bonding at sub 200° C temperature and a nominal contact force of 4kN. Furthermore, electrical characterization using modified kelvin structure, and reliability assessment of this bonded structure was investigated under multiple current stressing, temperature cycling test and the results indicate excellent stability without electrical performance degradation. This practical finding has immense potential to leads into practical realization of 3D IC integration.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115772691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Influence of geometric pattern design and surface roughness on thermal performance of copper to copper bonding 几何图案设计和表面粗糙度对铜-铜键合热性能的影响
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947469
Kathleen Jerchel, T. Suga
{"title":"Influence of geometric pattern design and surface roughness on thermal performance of copper to copper bonding","authors":"Kathleen Jerchel, T. Suga","doi":"10.23919/LTB-3D.2017.7947469","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947469","url":null,"abstract":"This paper functions as a feasibility study to prove increase of thermal performance of patterned Cu with an analytic model that takes into account the surface roughness. The thermal resistance is described as a function of the bonded surface area.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"683 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116109995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel sequential plasma activation method for direct glass bonding 新型序贯等离子体活化法直接玻璃键合
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947418
Ran He, A. Yamauchi, T. Suga
{"title":"Novel sequential plasma activation method for direct glass bonding","authors":"Ran He, A. Yamauchi, T. Suga","doi":"10.23919/LTB-3D.2017.7947418","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947418","url":null,"abstract":"We report a newly developed sequential plasma activation bonding (SPAB) process for direct bonding between quartz glass wafers. The novel SPAB method in the present paper employed RIE N2 plasma activation followed by or instead of the O2 plasma activation before the N radical activation. Experimental results are reported and discussed with comparison with the conventional SPAB process.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123436728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
2D material transfer using room temperature bonding 使用室温粘合的二维材料转移
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947451
T. Matsumae, T. Suga
{"title":"2D material transfer using room temperature bonding","authors":"T. Matsumae, T. Suga","doi":"10.23919/LTB-3D.2017.7947451","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947451","url":null,"abstract":"This study investigates the use of room temperature bonding for layer transfer process to reduce contaminants on a transferred material. It was found that resist residues on transferred graphene were significantly reduced using surface activated bonding at room temperature in comparison of thermal compression bonding at 250 °C. Surface activated bonding can provide a platform for layer transfer process suitable for 2D materials integration.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"34-35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123620380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Wafer bonding tool including dual plasma capability for in-situ sputter etching prior to aligned bonding 晶圆键合工具，包括双等离子体能力，在对准键合之前进行原位溅射蚀刻
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947405
T. Rogers, V. Masteika, R. Santilli
{"title":"Wafer bonding tool including dual plasma capability for in-situ sputter etching prior to aligned bonding","authors":"T. Rogers, V. Masteika, R. Santilli","doi":"10.23919/LTB-3D.2017.7947405","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947405","url":null,"abstract":"Surface passivation free direct bonding is emerging as an important wafer bonding technique. We present an innovative approach to removing passivation layers and bonding in a single tool via simultaneous dual plasma treatment.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125225100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low temperature metal-metal bonding for heterogeneous integration and performance scaling 低温金属-金属键合的异质集成和性能缩放
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947438
M. Goorsky, K. Schjølberg-Henriksen, B. Beekley, N. Marathe, K. Mani, A. Bajwa, S. Iyer
{"title":"Low temperature metal-metal bonding for heterogeneous integration and performance scaling","authors":"M. Goorsky, K. Schjølberg-Henriksen, B. Beekley, N. Marathe, K. Mani, A. Bajwa, S. Iyer","doi":"10.23919/LTB-3D.2017.7947438","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947438","url":null,"abstract":"Au-Au based interconnect bonding (and Cu-Cu bonding) is advanced by addressing the roles of initial surface roughness, chemical mechanical polishing, bonding pressure and temperature. Focused ion beam sectioning through the bonded interface is used to determine grain growth, void evolution, and void faceting.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133269494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Development of GaAs//Si current-balanced dual junction solar cell integrated by surface-activated bonding 表面活化键合集成的GaAs/ Si电流平衡双结太阳能电池的研制
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI: 10.23919/LTB-3D.2017.7947449
Kentaroh Watanabe, Erina Nagaoka, Daiji Yamashita, K. Toprasertpong, Y. Nakano, M. Sugiyama
{"title":"Development of GaAs//Si current-balanced dual junction solar cell integrated by surface-activated bonding","authors":"Kentaroh Watanabe, Erina Nagaoka, Daiji Yamashita, K. Toprasertpong, Y. Nakano, M. Sugiyama","doi":"10.23919/LTB-3D.2017.7947449","DOIUrl":"https://doi.org/10.23919/LTB-3D.2017.7947449","url":null,"abstract":"A thickness controlled dual junction GaAs//Si solar cell for current matching was fabricated and demonstrated. The optically thin GaAs top cell grown by metal-organic vapor phase epitaxy (MOVPE) was directly integrated on the Si bottom cell by surface-activated bonding (SAB) method. Owing to the optically thin (∼300 nm) GaAs top sub-cell, the operation of current-matched dual junction cell was observed under the standard 1 SUN illumination.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133804076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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