表面活化键合的GCIB辐照条件优化

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI:10.23919/LTB-3D.2017.7947462

S. Ikeda, T. Sasaki, N. Toyoda

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引用次数: 0

摘要

采用气簇离子束(GCIB)进行表面活化键合(SAB)。由于GCIB只在近表面进行修饰，因此期望进行低损伤的表面修饰和活化。本研究选择GCIB辐照下的Cu-Cu键合作为初步研究。XPS和接触角测试表明，在5 ~ 20 kV的斜入射Ar-GCIB下，Cu表面的氧化物被有效去除。同时，GCIB在正入射和斜入射下的连续照射也使Cu表面光滑。然后通过拉伸试验研究了Cu-Cu结合强度。

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Optimization of GCIB irradiation conditions for surface activated bonding

Gas cluster ion beam (GCIB) was used for surface activation bonding (SAB). Since GCIB modifies only near surface, low-damage surface modification and activation are expected. In this study, Cu-Cu bonding with GCIB irradiation was selected as a preliminary study. XPS and contact angle measurement showed that surface oxide on Cu was removed efficiently by oblique incidence Ar-GCIB at 5–20 kV. Also, sequential irradiation of GCIB at normal and oblique incidence realized smooth Cu surface. After that Cu-Cu bonding strength was investigated by the tensile test.

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来源期刊

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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