Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005.最新文献_第2页

Sn2.5Ag0.5Cu lead free solder balls with "Ge" and "Ni" 含“Ge”和“Ni”的Sn2.5Ag0.5Cu无铅钎料球

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432060

R. Lee, Wha Soo Sin, J. K. Jeon, Heui Seog Kim

引用次数: 1

Improvement of electrical performance of anisotropically conductive adhesives 各向异性导电胶粘剂电性能的改进

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432079

Yi Li, K. Moon, C. Wong

引用次数: 3

High frequency design and characterization of SU-8 based conductor backed coplanar waveguide transmission lines 基于SU-8导体的共面波导传输线高频设计与特性研究

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432083

Felix D. Mbairi, H. Hesselbom

{"title":"High frequency design and characterization of SU-8 based conductor backed coplanar waveguide transmission lines","authors":"Felix D. Mbairi, H. Hesselbom","doi":"10.1109/ISAPM.2005.1432083","DOIUrl":"https://doi.org/10.1109/ISAPM.2005.1432083","url":null,"abstract":"The epoxy-based negative photoresist SU8 is widely, used within the MEMS (microelectromechanical systems) community, and is well known for its ability to form thick layers with high aspect ratios and for its chemical resistance. However, only a few papers have investigated the electrical properties of this material and mostly within the MEMS area or at lower frequency ranges. This paper presents the design and characterization of conductor-backed coplanar waveguide (CBCPW) transmission lines using SU-8 dielectric material. The coplanar transmission lines are carefully designed using EDA tools, and fabricated on a metallized glass substrate coated with SU-8 material. S-parameter measurements are performed from 45 MHz to 50 GHz using a vector network analyzer and a probe station. From these measurements, transmission line parameters such as characteristic impedance, attenuation constant, effective dielectric constant, loss tangent, etc, are determined. The design procedure, fabrication process and measurement results are described in this paper. To our knowledge, this is the first time the SU-8 material is characterized in microelectronics using CBCPW transmission lines.","PeriodicalId":181674,"journal":{"name":"Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005.","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126354452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 62

Electromigration in eutectic tin-lead solder lines at the device temperature 在器件温度下共晶锡铅焊锡线的电迁移

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432069

R. Agarwal, K. Tu

引用次数: 1

The role of self-assembled monolayer (SAM) on Ag nanoparticles for conductive nanocomposite 自组装单层(SAM)在银纳米颗粒导电纳米复合材料中的作用

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432087

Hongjin Jiang, K. Moon, Lingbo Zhu, Jiongxin Lu, C. Wong

引用次数: 5

Substrate effects on the creep properties of pure Sn solder joints 衬底对纯锡焊点蠕变性能的影响

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432038

Kyu-Oh Lee, J. Morris, F. Hua

引用次数: 2

Effect of electromigration on mechanical behavior of solder joints 电迁移对焊点力学行为的影响

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432048

F. Ren, J. Nah, J. Suh, K. Tu, B. Xiong, L.H. Xu, J. Pang

引用次数: 9

The metallic nickel inserted p/sup -//p/sup +/ Si substrate used for RF crosstalk reduction in mixed signal ICs 金属镍插入p/sup -//p/sup +/ Si衬底用于减少混合信号集成电路中的射频串扰

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432075

Xi Zhang, K. Chong, Yahong Xie, K. Tu

{"title":"The metallic nickel inserted p/sup -//p/sup +/ Si substrate used for RF crosstalk reduction in mixed signal ICs","authors":"Xi Zhang, K. Chong, Yahong Xie, K. Tu","doi":"10.1109/ISAPM.2005.1432075","DOIUrl":"https://doi.org/10.1109/ISAPM.2005.1432075","url":null,"abstract":"A novel approach for 3-dimensional substrate impedance engineering of p/sup -//p/sup +/ Si substrate was studied for mixed-signal integrated circuit applications. For enhanced radio frequency (RF) crosstalk isolation, a highly conductive region analogous to a moat was inserted in the substrate between the noise producing and noise sensitive circuits to serve as grounded shields. Electroless plating was used to metallize the macroporous silicon moat etched beforehand within the p/sup -//p/sup +/ substrate to isolate electromagnetic interference and provide \"true ground\" contacts. The electroless plating was conducted in a concentrated aqueous solution containing Ni/sup 2+/ and NH/sup 4/F. Metallic Ni was rapidly deposited without using a reducing agent or any activation treatment at a slightly elevated temperature. After certain immersion duration, the initially single crystalline Si sidewall of the pores was completely modified by the polycrystalline metallic Ni while the original one-dimensional straight pore structure was still maintained. Thus a highly conductive porous structure was obtained in the substrate and RF crosstalk was reduced to the level limited by that across the air gap between the measurement probes. This technique offers further improvement with regard to RF crosstalk via substrate on the isolation effect achieved by high impedance through-the-wafer porous Si.","PeriodicalId":181674,"journal":{"name":"Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114174855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electromigration study on Cu-Sn interconnections Cu-Sn互连的电迁移研究

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432046

Taeyeop Lee, F. Hua, J. Morris

引用次数: 0

Utilization of carbon fibers in thermal management of microelectronics 碳纤维在微电子热管理中的应用

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432086

H. Zhong, S. Rubinsztajn, A. Gowda, D. Esler, D. Gibson, D. Buckley, J. Osaheni, S. Tonapi

{"title":"Utilization of carbon fibers in thermal management of microelectronics","authors":"H. Zhong, S. Rubinsztajn, A. Gowda, D. Esler, D. Gibson, D. Buckley, J. Osaheni, S. Tonapi","doi":"10.1109/ISAPM.2005.1432086","DOIUrl":"https://doi.org/10.1109/ISAPM.2005.1432086","url":null,"abstract":"Power dissipation is expected to increase exponentially to 150-250 W per chip over the next decade. To manage this large heat output, it is necessary to minimize the thermal resistance between the chip and a heat dissipation unit that the device is attached to. It is therefore important to further improve the thermal performance of thermal interface materials (TIMs), which can be achieved through 1) improvement of the bulk thermal conductivity of TIMs; and/or 2) reduction of interfacial thermal resistances between the TIM and the device and/or TIM and the heat dissipation unit. The latter improvement may be obtained by enhanced physical properties of TIMs (e.g., viscosity or wetting ability) and/or surface modification of the heat dissipation unit or the inactive side of the device. Researchers have tried to take advantage of the high 1D thermal conductivities of graphite fibers, and more recently of carbon nanotubes (CNT), to reduce the thermal resistance between the chip and the heat dissipation unit. The efforts can be classified into three categories: 1) Forming pre-aligned graphite fiber or CNT films that have high bulk thermal conductivities in the heat transport direction, and applying such films as TIMs; 2) incorporating randomly oriented graphite fibers or CNT into silicone or epoxy matrices in the presence or absence of a second filler to improve bulk thermal conductivities, and applying the thus-formed blend as thermal greases, or adhesives or gels; and 3) growing CNT or graphite fibers from the heat sink/spreader surface and/or silicon backside and assembling them together with a TIM a to increase the bulk heat transport property and reduce the interfacial resistances, In this paper, we will present results for each of the three approaches, and discuss the challenges facing each one.","PeriodicalId":181674,"journal":{"name":"Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005.","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130592880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5