Cu-Sn互连的电迁移研究

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI:10.1109/ISAPM.2005.1432046

Taeyeop Lee, F. Hua, J. Morris

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引用次数: 0

摘要

本文研究了在简单Cu-Sn和Cu-Sn-Cu扩散偶中，电子电流对Sn和Cu扩散的影响。设计扩散偶是为了对扩散过程进行现场研究。初始试验在60/spl℃的空气中进行，电流密度为1 /spl乘以/ 10/sup 4/ a /cm/sup 2/。结果表明，Cu沿电子电流方向向Sn移动。伴随着Sn晶粒的晶界滑动。也有证据表明锡的流动方向与电子电流相反。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electromigration study on Cu-Sn interconnections

This research concerns the influence of electron current on the diffusion of Sn and Cu in simple Cu-Sn and Cu-Sn-Cu diffusion couples. The diffusion couples are designed to permit in situ studies of the progress of diffusion. Initial tests were done in 60/spl deg/C air with a current density of 1 /spl times/ 10/sup 4/A/cm/sup 2/. The results showed Cu movement into Sn in the direction of the electron current. With accompanying grain boundary sliding of the Sn grains. There is also evidence for Sn flow in the direction opposite the electron current.

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Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005.

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