Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005.最新文献_第6页

Morphology, growth and size distribution of Cu/sub 6/Sn/sub 5/ intermetallic compound by flux-driven ripening at SnPb solder and Cu interface 在SnPb焊料和Cu界面上通过助焊剂催熟制备Cu/sub - 6/Sn/sub - 5/金属间化合物的形貌、生长和尺寸分布

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432040

J. Suh, K. Tu, A. Gusak

引用次数: 3

Embedding active components inside printed circuit board (PCB) - a solution for miniaturization of electronics 在印刷电路板(PCB)内嵌入有源元件——电子器件小型化的解决方案

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432034

P. Palm, J. Moisala, A. Kivikero, R. Tuominen, A. Iihola

{"title":"Embedding active components inside printed circuit board (PCB) - a solution for miniaturization of electronics","authors":"P. Palm, J. Moisala, A. Kivikero, R. Tuominen, A. Iihola","doi":"10.1109/ISAPM.2005.1432034","DOIUrl":"https://doi.org/10.1109/ISAPM.2005.1432034","url":null,"abstract":"The continuous miniaturization of the electronics sets new requirements for the substrates, component packages and assembly technologies. Traditionally, the passive and active components are mounted on the surface of the PCB using SMA technology. The component size, I/O pitch and line width of the PCB's has been deceasing rapidly during past years. With traditional technologies, it is more difficult to increase the packaging density any more. This has increased interest toward embedding passive and active components inside the substrate. In this paper, the third generation manufacturing process to embed active components inside organic substrate is presented. In the integrated module board (IMB-R) technology, active components are integrated inside an organic substrate, e.g. the printed circuit board (PCB) structure. The manufacturing process allows for an entire product or some of its functional parts to be embedded inside the substrate. The process combines high-density PWB manufacturing, component packaging/assembly and the fabrication of the interconnection into one single manufacturing process flow. The interconnections of the IC's are done simultaneously using electroplating process. The technology enables high interconnection density with good reliability. Also, the IMB technology enables so-called \"all-layer-assembly\" where the whole three dimensional volume of the module (not only the surfaces) is used for component assembly.","PeriodicalId":181674,"journal":{"name":"Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005.","volume":"543 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123580511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 24

Lead-free 0201 assembly and reliability 0201无铅组装，可靠性高

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432055

S. Ramkumar, R. Newasekar, R. Ghaffarian

{"title":"Lead-free 0201 assembly and reliability","authors":"S. Ramkumar, R. Newasekar, R. Ghaffarian","doi":"10.1109/ISAPM.2005.1432055","DOIUrl":"https://doi.org/10.1109/ISAPM.2005.1432055","url":null,"abstract":"The many challenges with 0201 assembly can be attributed to the solder paste volume, pad design, aperture design, board finish, type of solder paste, pick and place and reflow profile. A design of experiment study was carried out to investigate the effects of these parameters on assembly defects and reliability. The test vehicles for the study consist of pad layouts for 2000-0201 components. Five different test vehicles were used, with the same pad layout and non-solder mask defined pads, with HASL, Ni/Au, pure tin (Sn), immersion silver (ImAg) and OSP finish. Four different pad shapes are designed on each of the test vehicles (rectangular, oval, modified home plate and double trapezoid). The pad areas for all four shapes are maintained the same. The pads are oriented both in the horizontal and vertical directions. Electroformed 3 mil and 4.65 mil thick stencils were used for printing the solder paste. The stencil was designed to obtain two distinct aperture-pad combinations (matched and unmatched). Three solder paste types (lead-based, lead-free and anti-tomstoning) were used in the study. Two test vehicles assembled for each experimental run, one with resistors and the other with capacitors, provided an understanding of the difference in the process for these two common passive devices. This paper discusses in detail the influence of a few key parameters and defects associated with them using both leaded and lead free solder alloys. The most recent data on shear test results after isothermal aging at 150/spl deg/C are presented.","PeriodicalId":181674,"journal":{"name":"Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005.","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131572207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Wafer bonding using fluxless process with Sn-rich Sn-Au dual-layer structure 采用富锡锡金双层结构无焊剂键合晶圆

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432057

C.C. Lee, Jongsung Kim

{"title":"Wafer bonding using fluxless process with Sn-rich Sn-Au dual-layer structure","authors":"C.C. Lee, Jongsung Kim","doi":"10.1109/ISAPM.2005.1432057","DOIUrl":"https://doi.org/10.1109/ISAPM.2005.1432057","url":null,"abstract":"In many devices and packaging applications, it has been an engineering dream to be able to bond two entire wafers of the same material or of different materials with a thin metallic joint. Many new device concepts cannot be implemented because of the lack of this technology. An obvious idea to achieve this is to use solders. However, the need of using flux in the soldering process prohibits achieving void-free and uniform solder joint because flux and flux residues can be easily trapped in the joint, resulting in voids and uneven solder layer. Thus, it seems that a solution to this is to develop a soldering process that does not require the use of flux, i.e, fluxless or flux-free. In this paper, we report our initial success of bonding two 2-inch silicon wafers using Sn-rich Sn-Au dual-layer structure that is produced by electroplating process. No flux is used in the bonding process. It is much harder to achieve fluxless characteristic using Sn-rich Sn-Au alloys than Sn20Au80 eutectic alloy. The resulting Sn-rich solder joint layer, about 10 /spl mu/m in thickness, is very uniform over the entire 2-inch sample. In the initial run, two samples are produced. The quality of the joint is examined using reflection-mode scanning acoustic microscope (SAM) and X-ray micro-imaging technique. Results of these two methods indicate that the joints are of high quality. Of these two samples, the better one shows nearly perfect joint with only 2% of possible void area. More studies and evaluation are needed to further extend this method to larger wafers and to wafer materials other than silicon. This initial success shows that it is indeed possible to bond entire wafers together with a thin metallic joint of high quality.","PeriodicalId":181674,"journal":{"name":"Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005.","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131768414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Conduction mechanism of anisotropic conductive adhesives (ACAs): conductor ball deformation and build-up of contraction stresses 各向异性导电胶粘剂(ACAs)的传导机理:导体球的变形和收缩应力的积累

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432078

K. Paik, W. Kwon

{"title":"Conduction mechanism of anisotropic conductive adhesives (ACAs): conductor ball deformation and build-up of contraction stresses","authors":"K. Paik, W. Kwon","doi":"10.1109/ISAPM.2005.1432078","DOIUrl":"https://doi.org/10.1109/ISAPM.2005.1432078","url":null,"abstract":"In this paper, the effects of ACA conductor ball deformation and build-up of contraction stresses on ACA conduction is discussed. Precise ACA conductor ball deformation was measured using a nano-indentation machine. Better electrical contact resistance model of ACAs can be obtained using measured deformation behavior of ACA conductor balls. In addition, contraction stresses of ACAs during thermal curing are important factor determining the ACA contact resistance. Both ACF thickness shrinkages and modulus changes of four kinds of ACFs with different thermo-mechanical properties were experimentally investigated using thermo-mechanical and dynamic mechanical analysis. Based on an incremental approach to linear elasticity, contraction stresses of ACAs developed along the thickness direction were numerically predicted. It is found that contraction stresses of ACAs were developed during the cooling process from the glass transition temperature of ACAs to room temperature. The build-up of contraction stresses below Tg was strongly dependent on both coefficient of thermal expansion (CTE) and elastic modulus (E) of ACAs. A nanoscale deformation field of thin ACF layers was obtained to measure the contraction stresses experimentally using a phase shifting moire technique. Good agreement between the contraction stresses predicted from an incremental approach and the actual vertical stresses measured from a phase shifting moire analysis was obtained. Therefore, full temperature-evolution of contraction stress based on the incremental approach to linear elasticity is reliable and thereby can be used to predict the contraction stress behavior of polymeric ACF materials. As a summary, better understanding of ACA contact resistance can be achieved by analyzing conductor ball deformation and contraction stresses analysis.","PeriodicalId":181674,"journal":{"name":"Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005.","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125484058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Development of new surface finishing technology for PKG substrate with high bondability 高结合力PKG基板表面处理新技术的开发

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432058

K. Tsukada

引用次数: 4

Microstructure evolution of tin under electromigration studied by synchrotron X-ray micro-diffraction 同步x射线显微衍射研究了锡在电迁移过程中的微观结构演变

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432073

A. Wu, J. Lloyd, N. Tamura, K. Tu

引用次数: 1