发布求助
文献互助 智能选刊 最新文献

26th International Conference on Indium Phosphide and Related Materials (IPRM)最新文献

筛选
英文 中文
Ion implanted In0.53Ga0.47As for ultrafast saturable absorber device at 1.55 μm 离子注入In0.53Ga0.47As在1.55 μm超快饱和吸收装置
26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-08-21 DOI: 10.1109/ICIPRM.2014.6880581
L. Fang, C. Bachelet, I. Sagnes, G. Beaudoin, J. Oudar
{"title":"Ion implanted In0.53Ga0.47As for ultrafast saturable absorber device at 1.55 μm","authors":"L. Fang, C. Bachelet, I. Sagnes, G. Beaudoin, J. Oudar","doi":"10.1109/ICIPRM.2014.6880581","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880581","url":null,"abstract":"Iron (Fe) ion implantation with post-annealing was used to shorten the carrier lifetime of In0.53Ga0.47As-based saturable absorber due to an effective Fe3+/Fe2+ trap level. The modulation depth and the nonsaturable loss were investigated. Moreover, we found that the saturation of Fe-related trap level at high excited carrier density can be avoided by introducing Zn dopant in InGaAs. Furthermore, by comparing As and Fe-implanted InGaAs samples, we found that Fe2+/Fe3+ is more effective as a trap center for electrons and holes, while ionized As is a trap center only for electrons in InGaAs.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116252331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Waveguide InGaAs photodetector with schottky barrier enhancement layer on III-V CMOS photonics platform 基于III-V CMOS光电平台的肖特基势垒增强层波导InGaAs光电探测器
26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-08-21 DOI: 10.1109/ICIPRM.2014.6880578
Yongpeng Cheng, Y. Ikku, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi
{"title":"Waveguide InGaAs photodetector with schottky barrier enhancement layer on III-V CMOS photonics platform","authors":"Yongpeng Cheng, Y. Ikku, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi","doi":"10.1109/ICIPRM.2014.6880578","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880578","url":null,"abstract":"Low-dark-current InGaAs metal-semiconductor-metal (MSM) photodetectors monolithically integrated with InP photonic-wire waveguides are fabricated on III-V CMOS photonics platform. By using the Schottky barrier enhancement layer consisting of the InP/InAlAs layers, the dark current is successfully reduced to 7nA at 1V bias.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130442438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication of submicron planar Gunn diode 亚微米平面Gunn二极管的制备
26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI: 10.1109/ICIPRM.2014.6880542
A. Khalid, S. Thoms, D. Macintyre, I. Thayne, D. Cumming
{"title":"Fabrication of submicron planar Gunn diode","authors":"A. Khalid, S. Thoms, D. Macintyre, I. Thayne, D. Cumming","doi":"10.1109/ICIPRM.2014.6880542","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880542","url":null,"abstract":"We present, for the first time, the fabrication process for a submicron planar Gunn diode in In0.53Ga0.47As on an InP substrate operating at 265 GHz. A novel two stage lift off method has been developed to achieve a submicron gaps between contacts down to 135 nm with widths up to 120 μm.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126260795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Improved electron-beam lithography with C60 fullerene for InP membrane waveguides 改进的C60富勒烯电子束光刻技术用于InP膜波导
26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI: 10.1109/ICIPRM.2014.6880546
Y. Jiao, J. Pello, Longfei Shen, B. Smalbrugge, M. Smit, J. V. D. van der Tol
{"title":"Improved electron-beam lithography with C60 fullerene for InP membrane waveguides","authors":"Y. Jiao, J. Pello, Longfei Shen, B. Smalbrugge, M. Smit, J. V. D. van der Tol","doi":"10.1109/ICIPRM.2014.6880546","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880546","url":null,"abstract":"We present a method to prepare a mixed resist material composed of a positive electron-beam resist (ZEP520A) and C60 fullerene. The method is modified from previous methods in literatures to achieve an optimized mixing. An improvement of the mixed material on the thermal resistance respect to the same structures fabricated with normal ZEP resist has been demonstrated by fabricating multimode interference couplers and coupling regions of micro-ring resonators. An improvement on the propagation loss of the InP membrane waveguides from 6.6 to 3.3 dB/cm using this mixed material is also shown.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127984536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Zero-bias GaAsSb/InAlAs/InGaAs tunnel diode detectors for 220–330 GHz range 零偏置GaAsSb/InAlAs/InGaAs隧道二极管探测器，220-330 GHz范围
26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI: 10.1109/ICIPRM.2014.6880529
M. Patrashin, N. Sekine, A. Kasamatsu, I. Watanabe, I. Hosako, Tsuyoshi Takahashi, Masaru Sato, Y. Nakasha, N. Hara
{"title":"Zero-bias GaAsSb/InAlAs/InGaAs tunnel diode detectors for 220–330 GHz range","authors":"M. Patrashin, N. Sekine, A. Kasamatsu, I. Watanabe, I. Hosako, Tsuyoshi Takahashi, Masaru Sato, Y. Nakasha, N. Hara","doi":"10.1109/ICIPRM.2014.6880529","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880529","url":null,"abstract":"This presentation describes on-wafer characterization of GaAsSb/InAlAs/InGaAs tunnel diodes for direct detection in 220-330GHz band. Voltage sensitivity above 1000V/W was measured in 0.8μm×0.8μm mesa device at room temperature. The detectors demonstrated enhanced temperature stability of the characteristics compared to zero-bias Schottky barrier diodes. The estimated variations of the zero-bias sensitivity at temperatures from 17K to 300K were less than 2dB.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130098091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A sub-mW D-band 2nd harmonic oscillator using InP-based quantum-effect tunneling devices 基于inp的量子效应隧穿装置的亚毫瓦d波段二谐振荡器
26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI: 10.1109/ICIPRM.2014.6880527
Jooseok Lee, Maengkyu Kim, Jongwon Lee, Kyounghoon Yang
{"title":"A sub-mW D-band 2nd harmonic oscillator using InP-based quantum-effect tunneling devices","authors":"Jooseok Lee, Maengkyu Kim, Jongwon Lee, Kyounghoon Yang","doi":"10.1109/ICIPRM.2014.6880527","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880527","url":null,"abstract":"A compact D-band 2nd harmonic oscillator utilizing a push-push approach is demonstrated for the first time by using InP-based RTDs (resonant tunneling diodes). In order to achieve the low power operation, the NDC (negative differential conductance) characteristic at a low voltage of the RTD is used for RF signal generation. The implemented RTD-based oscillator by using an InP-based RTD MMIC technology operates at an oscillation frequency of 164.6 GHz. The total dc power consumption of the RTD oscillator is 0.4 mW, which is the lowest value reported up to date in the mm-wave D-band MMIC oscillators.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130840438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate 在GaSb(001)衬底上选择性面积外延生长InAs/AlGaSb Esaki隧道二极管
26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI: 10.1109/ICIPRM.2014.6880530
L. Desplanque, Xianglei Han, M. Fahed, V. Chinni, D. Troadec, M. Chauvat, P. Ruterana, X. Wallart
{"title":"InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate","authors":"L. Desplanque, Xianglei Han, M. Fahed, V. Chinni, D. Troadec, M. Chauvat, P. Ruterana, X. Wallart","doi":"10.1109/ICIPRM.2014.6880530","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880530","url":null,"abstract":"We report on the realization of AlGaSb/InAs Esaki tunnel diodes on GaSb (001) substrate. Selective area molecular beam epitaxy of InAs is used to define the area of the diodes down to submicron dimensions. A peak current density up to 1.3 MA/cm2 is achieved.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115564657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
W-band InP-based resonant tunnelling diode oscillator with milliwatt output power 输出功率为毫瓦的w波段inp基谐振隧穿二极管振荡器
26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI: 10.1109/ICIPRM.2014.6880531
Jue Wang, Liquan Wang, Chong Li, K. Alharbi, A. Khalid, E. Wasige
{"title":"W-band InP-based resonant tunnelling diode oscillator with milliwatt output power","authors":"Jue Wang, Liquan Wang, Chong Li, K. Alharbi, A. Khalid, E. Wasige","doi":"10.1109/ICIPRM.2014.6880531","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880531","url":null,"abstract":"This paper presents a high power (milliwatt) W-band resonant tunneling diode (RTD) oscillator. The oscillator circuit employs two RTD devices in parallel and operates at 75.2 GHz with -0.2 dBm (0.95 mW) output power. To the authors knowledge, this is the highest reported output power for an RTD oscillator at W-band.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128710766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
High Q-factor InP Photonic Crystal nanobeam cavities for laser emission 用于激光发射的高q因子InP光子晶体纳米束腔
26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI: 10.1109/ICIPRM.2014.6880516
G. Crosnier, A. Bazin, P. Monnier, S. Bouchoule, R. Braive, G. Beaudoin, I. Sagnes, R. Raj, F. Raineri
{"title":"High Q-factor InP Photonic Crystal nanobeam cavities for laser emission","authors":"G. Crosnier, A. Bazin, P. Monnier, S. Bouchoule, R. Braive, G. Beaudoin, I. Sagnes, R. Raj, F. Raineri","doi":"10.1109/ICIPRM.2014.6880516","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880516","url":null,"abstract":"Fabrication of high Q-factor InP-based Photonic Crystal nanobeam cavities is demonstrated by improving ICP etching. We measure Q-factors as high as ~130,000 for passive cavities by integrating them on to SOI wire waveguides. Nanolasers exhibiting low lasing threshold are then obtained using this technology.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121372003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Photonic ICs in a generic foundry 通用晶圆厂的光子集成电路
26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI: 10.1109/ICIPRM.2014.6880575
K. Lawniczuk
{"title":"Photonic ICs in a generic foundry","authors":"K. Lawniczuk","doi":"10.1109/ICIPRM.2014.6880575","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880575","url":null,"abstract":"A generic foundry model in photonics enables design and fabrication of a variety of different photonic devices, for many applications, using standardized high-performance foundry platforms. Access to the generic foundries is available via multi-project wafer runs. In this way, the costs for developing photonic ICs are reduced by more than an order of magnitude and come within reach for SMEs and universities. The reduction of processing costs is achieved by costs-sharing among many application users participating in one fab cycle, and by reusing standardized and parameterized photonic components. A closer view on an indium phosphide based photonic ICs is given.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131517799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信