Waveguide InGaAs photodetector with schottky barrier enhancement layer on III-V CMOS photonics platform

Abstract

Low-dark-current InGaAs metal-semiconductor-metal (MSM) photodetectors monolithically integrated with InP photonic-wire waveguides are fabricated on III-V CMOS photonics platform. By using the Schottky barrier enhancement layer consisting of the InP/InAlAs layers, the dark current is successfully reduced to 7nA at 1V bias.