基于III-V CMOS光电平台的肖特基势垒增强层波导InGaAs光电探测器

26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-08-21 DOI:10.1109/ICIPRM.2014.6880578

Yongpeng Cheng, Y. Ikku, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi

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引用次数: 1

摘要

在III-V型CMOS光电平台上制备了低暗电流铟砷化金属-半导体-金属(MSM)光电探测器，并将其与InP光子线波导单片集成。通过使用由InP/InAlAs层组成的肖特基势垒增强层，在1V偏置下成功地将暗电流降低到7nA。

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Waveguide InGaAs photodetector with schottky barrier enhancement layer on III-V CMOS photonics platform

Low-dark-current InGaAs metal-semiconductor-metal (MSM) photodetectors monolithically integrated with InP photonic-wire waveguides are fabricated on III-V CMOS photonics platform. By using the Schottky barrier enhancement layer consisting of the InP/InAlAs layers, the dark current is successfully reduced to 7nA at 1V bias.

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26th International Conference on Indium Phosphide and Related Materials (IPRM)

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