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26th International Conference on Indium Phosphide and Related Materials (IPRM)最新文献

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InP nanowire lasers epitaxially grown on (001) silicon ‘V-groove’ templates 在(001)硅“v型槽”模板上外延生长的InP纳米线激光器
26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI: 10.1109/ICIPRM.2014.6880557
B. Tian, Zhechao Wang, M. Pantouvaki, Weiming Guo, J. Van Campenhout, Merckling Clement, D. van Thourhout
{"title":"InP nanowire lasers epitaxially grown on (001) silicon ‘V-groove’ templates","authors":"B. Tian, Zhechao Wang, M. Pantouvaki, Weiming Guo, J. Van Campenhout, Merckling Clement, D. van Thourhout","doi":"10.1109/ICIPRM.2014.6880557","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880557","url":null,"abstract":"We demonstrate an ultra-low threshold nanowire laser monolithically integrated on a (001) silicon substrate. By using a V-groove template we were able to reduce the laser threshold by one order of magnitude (0.19pJ per pulse) compared with our earlier devices and dramatically increased the yield throughout the wafer.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134123291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Negative-differential-conductance RTD amplifier MMIC with record foms of gain-to-dc power ratio and noise figure 负差分电导RTD放大器MMIC，具有增益-直流功率比和噪声系数的记录形式
26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI: 10.1109/ICIPRM.2014.6880528
Jongwon Lee, Jooseok Lee, Maengkyu Kim, Kyounghoon Yang
{"title":"Negative-differential-conductance RTD amplifier MMIC with record foms of gain-to-dc power ratio and noise figure","authors":"Jongwon Lee, Jooseok Lee, Maengkyu Kim, Kyounghoon Yang","doi":"10.1109/ICIPRM.2014.6880528","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880528","url":null,"abstract":"An ultralow-dc-power negative-differential-conductance (NDC) microwave amplifier using resonant tunneling diodes (RTDs) is presented and its noise figure characteristic is for the first time reported. The fabricated amplifier exhibits an extremely low dc-power consumption of 155 μW along with good RF performances of an RF gain of 8.1 dB, a return loss of more than 11 dB, and a noise figure of 4.5 dB at 5.5 GHz. The gain-to-dc power ratio was estimated to be 52.2 dB/mW. The figures-of-merit (FOMs) of the achieved gain-to-dc power ratio and noise figure are record for sub-mW low-power monolithic amplifiers at the related frequency band.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134436352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A low-resistance spiking-free n-type ohmic contact for InP membrane devices 一种用于InP膜器件的低阻无尖峰n型欧姆触点
26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI: 10.1109/ICIPRM.2014.6880544
Longfei Shen, Y. Jiao, L. Augstin, Kitty Sander, J. V. D. van der Tol, H. Ambrosius, G. Roelkens, M. Smit
{"title":"A low-resistance spiking-free n-type ohmic contact for InP membrane devices","authors":"Longfei Shen, Y. Jiao, L. Augstin, Kitty Sander, J. V. D. van der Tol, H. Ambrosius, G. Roelkens, M. Smit","doi":"10.1109/ICIPRM.2014.6880544","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880544","url":null,"abstract":"Au spiking is a long-standing problem for Ni/Ge/Au ohmic contacts on n-InP. This becomes more critical when the contacts are deposited on top of thin membrane devices. In order to reduce the spiking while maintaining a low resistance, we present a new approach which reduces the amount of Au in these contacts. A low specific contact resistance of 7×10-7 Ωcm2 is obtained after a 15 s annealing at 400 °C. Afterwards the contacts can be thickened with an extra deposition of metals. Scanning electron microscope pictures show abrupt and uniform interfaces between metals and semiconductors.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115127049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
High transconductance, ft and fmax in In0.63Ga0.37As FinFETs using a novel fin formation technique 采用新型翅片形成技术的In0.63Ga0.37As finfet的高跨导、ft和fmax
26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI: 10.1109/ICIPRM.2014.6880567
C. Zota, L. Wernersson, E. Lind
{"title":"High transconductance, ft and fmax in In0.63Ga0.37As FinFETs using a novel fin formation technique","authors":"C. Zota, L. Wernersson, E. Lind","doi":"10.1109/ICIPRM.2014.6880567","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880567","url":null,"abstract":"We report on In<sub>0.63</sub>Ga<sub>0.37</sub>As FinFETs utilizing nanowires grown by selective-area growth as channel. These nanowires are defined by crystallographic planes rather than pattern transfer using etching. The fabricated devices exhibit maximum transconductance g<sub>m, max</sub> = 2.05 mS/um at V<sub>ds</sub> = 0.5 V, as well as record-high extrapolated f<sub>t</sub> = 300 GHz and f<sub>max</sub> = 342 GHz, on the non-planar III-V MOSFET platform.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133653006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gain characteristics and femto-second optical pulse response of 1550nm-band QD-SOA for ultra-fast all-optical logic gate devices 超快全光逻辑门器件1550nm波段QD-SOA增益特性及飞秒光脉冲响应
26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI: 10.1109/ICIPRM.2014.6880561
A. Matsumoto, Y. Takei, A. Matsushita, K. Akahane, Y. Matsushima, K. Utaka
{"title":"Gain characteristics and femto-second optical pulse response of 1550nm-band QD-SOA for ultra-fast all-optical logic gate devices","authors":"A. Matsumoto, Y. Takei, A. Matsushita, K. Akahane, Y. Matsushima, K. Utaka","doi":"10.1109/ICIPRM.2014.6880561","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880561","url":null,"abstract":"We fabricated the QD-SOA, which was composed of 20-layer-stacked InAs quantum dots structure with the strain-compensation technique grown by MBE, and evaluated the fundamental gain characteristics and ultra-fast optical pulse response for all-optical logic gate devices at a wavelength range around 1550nm. For the device length of 1650 μm, the maximum gain of 34.7 dB was obtained for TE mode. And we also measured femto-second optical pulse response by auto-correlation waveforms to observe a slight pulse broadening of about 55 fs.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133456022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical injection in GaP-based laser waveguides and active areas 基于间隙的激光波导和有源区的电注入
26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI: 10.1109/ICIPRM.2014.6880545
J. Gauthier, C. Robert, S. Almosni, C. Cornet, Y. Léger, M. Perrin, A. Létoublon, C. Levallois, C. Paranthoen, J. Burin, J. Even, T. Rohel, K. Tavernier, Julie Lepouliquen, H. Carrère, A. Balocchi, X. Marie, O. Durand
{"title":"Electrical injection in GaP-based laser waveguides and active areas","authors":"J. Gauthier, C. Robert, S. Almosni, C. Cornet, Y. Léger, M. Perrin, A. Létoublon, C. Levallois, C. Paranthoen, J. Burin, J. Even, T. Rohel, K. Tavernier, Julie Lepouliquen, H. Carrère, A. Balocchi, X. Marie, O. Durand","doi":"10.1109/ICIPRM.2014.6880545","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880545","url":null,"abstract":"This paper presents the recent advances in device engineering towards the fabrication of an electrically pumped laser on GaP substrate for photonic integration on silicon. The letter first presents the electrical properties of a GaP-based PIN diode, in particular the reduction of the characteristic resistance of the p-contact, thanks to a judicious combination of metal choice and thermal annealing. Secondly, carrier injection in the active area is investigated by use of time-resolved photoluminescence, regarding particularly the nature and composition of the barrier and quantum wells materials, with a focus on the nitrogen incorporation issues.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"376 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132034865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Monolithic InGaAs-on-Si micro-disk ensemble LED with peak luminescence at 1.58 μm 单片InGaAs-on-Si微盘集成LED，峰值发光在1.58 μm
26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI: 10.1109/ICIPRM.2014.6880586
J. Kjellman, Takuo Tanemura, M. Sugiyama, Y. Nakano
{"title":"Monolithic InGaAs-on-Si micro-disk ensemble LED with peak luminescence at 1.58 μm","authors":"J. Kjellman, Takuo Tanemura, M. Sugiyama, Y. Nakano","doi":"10.1109/ICIPRM.2014.6880586","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880586","url":null,"abstract":"Ensembles of p-i-n InGaAs micro-discs, grown by micro selective-area metalorganic chemical vapor deposition are fabricated into LED structures. These structures exhibit electroluminescence with spectral peaks at 1580 nm, a sharp roll-off at 1590 nm and a full-width half-maximum in excess of 90 nm depending on injection current. This spectrum covers the entire C-band and establishes monolithic InGaAs-on-Si as a potential candidate for filling the need for on-silicon light-sources.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124006659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Butt-joint integration of active optical components based on InP/AlInGaAsP alloys 基于InP/AlInGaAsP合金的有源光学元件对接集成
26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI: 10.1109/ICIPRM.2014.6880579
I. Kulkova, N. Kuznetsova, E. Semenova, K. Yvind
{"title":"Butt-joint integration of active optical components based on InP/AlInGaAsP alloys","authors":"I. Kulkova, N. Kuznetsova, E. Semenova, K. Yvind","doi":"10.1109/ICIPRM.2014.6880579","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880579","url":null,"abstract":"We demonstrate all-active planar high quality butt-joint (BJ) integration of a QW Semiconductor Optical Amplifier (SOA) and MQW Electro-Absorption Modulator (EAM) based on an InP/AlInGaAsP platform. The degradation of the optical properties in the vicinity of ~1 μm to the BJ interface was determined by means of μPL measurements.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121589149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-power, high-linearity photodiodes 大功率、高线性光电二极管
26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI: 10.1364/OPTICA.3.000328
J. Campbell, A. Beling, Xiaojun Xie, Qiugui Zhou, Kejia Li
{"title":"High-power, high-linearity photodiodes","authors":"J. Campbell, A. Beling, Xiaojun Xie, Qiugui Zhou, Kejia Li","doi":"10.1364/OPTICA.3.000328","DOIUrl":"https://doi.org/10.1364/OPTICA.3.000328","url":null,"abstract":"This talk will describe modified uni-traveling carrier photodiodes (MUTCs) that have achieved high RF output power and high saturation current. Discrete photodiodes, 4×1 phase matched arrays, and balanced detectors will be discussed.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130383550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 77
Inp-alinas “strain free” early stages heteroepitaxy leading to nanostructure formation by MOVPE Inp-alinas“无应变”早期异质外延导致纳米结构的形成
26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI: 10.1109/ICIPRM.2014.6880536
A. Gocalinska, M. Manganaro, G. Juska, V. Dimastrodonato, K. Thomas, B. Joyce, Jing Zhang, D. Vvedensky, E. Pelucchi
{"title":"Inp-alinas “strain free” early stages heteroepitaxy leading to nanostructure formation by MOVPE","authors":"A. Gocalinska, M. Manganaro, G. Juska, V. Dimastrodonato, K. Thomas, B. Joyce, Jing Zhang, D. Vvedensky, E. Pelucchi","doi":"10.1109/ICIPRM.2014.6880536","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880536","url":null,"abstract":"We show that heteroepitaxy of thin films of InP on Al0.48In0.52As by MOVPE does not result in continuous flat layer growth, but instead develops a number of low dimensional structures, e.g. quantum dots and rings. We consider local phase separation/alloying-induced strain and preferred aggregation of adatom species on the substrate surface together with reduced wettability of InP on AlInAs to be the cause of the observed surface organization. This behavior has not been previously reported, and it opens a new application window for creating strain-free type-II staggered QD structures for possible applications in optical memories, detectors, and solar cells.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128227757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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