Jongwon Lee, Jooseok Lee, Maengkyu Kim, Kyounghoon Yang
{"title":"负差分电导RTD放大器MMIC,具有增益-直流功率比和噪声系数的记录形式","authors":"Jongwon Lee, Jooseok Lee, Maengkyu Kim, Kyounghoon Yang","doi":"10.1109/ICIPRM.2014.6880528","DOIUrl":null,"url":null,"abstract":"An ultralow-dc-power negative-differential-conductance (NDC) microwave amplifier using resonant tunneling diodes (RTDs) is presented and its noise figure characteristic is for the first time reported. The fabricated amplifier exhibits an extremely low dc-power consumption of 155 μW along with good RF performances of an RF gain of 8.1 dB, a return loss of more than 11 dB, and a noise figure of 4.5 dB at 5.5 GHz. The gain-to-dc power ratio was estimated to be 52.2 dB/mW. The figures-of-merit (FOMs) of the achieved gain-to-dc power ratio and noise figure are record for sub-mW low-power monolithic amplifiers at the related frequency band.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Negative-differential-conductance RTD amplifier MMIC with record foms of gain-to-dc power ratio and noise figure\",\"authors\":\"Jongwon Lee, Jooseok Lee, Maengkyu Kim, Kyounghoon Yang\",\"doi\":\"10.1109/ICIPRM.2014.6880528\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An ultralow-dc-power negative-differential-conductance (NDC) microwave amplifier using resonant tunneling diodes (RTDs) is presented and its noise figure characteristic is for the first time reported. The fabricated amplifier exhibits an extremely low dc-power consumption of 155 μW along with good RF performances of an RF gain of 8.1 dB, a return loss of more than 11 dB, and a noise figure of 4.5 dB at 5.5 GHz. The gain-to-dc power ratio was estimated to be 52.2 dB/mW. The figures-of-merit (FOMs) of the achieved gain-to-dc power ratio and noise figure are record for sub-mW low-power monolithic amplifiers at the related frequency band.\",\"PeriodicalId\":181494,\"journal\":{\"name\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2014.6880528\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2014.6880528","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Negative-differential-conductance RTD amplifier MMIC with record foms of gain-to-dc power ratio and noise figure
An ultralow-dc-power negative-differential-conductance (NDC) microwave amplifier using resonant tunneling diodes (RTDs) is presented and its noise figure characteristic is for the first time reported. The fabricated amplifier exhibits an extremely low dc-power consumption of 155 μW along with good RF performances of an RF gain of 8.1 dB, a return loss of more than 11 dB, and a noise figure of 4.5 dB at 5.5 GHz. The gain-to-dc power ratio was estimated to be 52.2 dB/mW. The figures-of-merit (FOMs) of the achieved gain-to-dc power ratio and noise figure are record for sub-mW low-power monolithic amplifiers at the related frequency band.