High transconductance, ft and fmax in In0.63Ga0.37As FinFETs using a novel fin formation technique

Abstract

We report on In_0.63Ga_0.37As FinFETs utilizing nanowires grown by selective-area growth as channel. These nanowires are defined by crystallographic planes rather than pattern transfer using etching. The fabricated devices exhibit maximum transconductance g_{m, max} = 2.05 mS/um at V_ds = 0.5 V, as well as record-high extrapolated f_t = 300 GHz and f_max = 342 GHz, on the non-planar III-V MOSFET platform.